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1. 发明申请

US20090090978A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090090978A1
公开(公告)日：2009-04-09
申请号：US12242142
申请日：2008-09-30
申请人： Yuji Harada , Kazuyuki Sawada , Masahiko Niwayama , Masaaki Okita
发明人： Yuji Harada , Kazuyuki Sawada , Masahiko Niwayama , Masaaki Okita
IPC分类号： H01L21/8236 , H01L27/088
CPC分类号： H01L21/823462 , H01L21/823418
摘要： A high-voltage transistor and a peripheral circuit including a second conductivity type MOSFET are provided together on a first conductivity type semiconductor substrate. The high-voltage transistor includes: a low concentration drain region of a second conductivity type formed in the semiconductor substrate; a low concentration source region of a second conductivity type formed in the semiconductor substrate and spaced apart from the low concentration drain region; and a high concentration source region of a second conductivity type having a diffusion depth deeper than that of the low concentration source region. A diffusion depth of the low concentration source region is equal to that of source/drain regions of the MOSFET.
摘要翻译：在第一导电型半导体基板上一起设置高压晶体管和包括第二导电型MOSFET的外围电路。高电压晶体管包括：形成在半导体衬底中的第二导电类型的低浓度漏极区域; 形成在半导体衬底中并与低浓度漏极区隔开的第二导电类型的低浓度源区; 以及具有比低浓度源区域的扩散深度更深的扩散深度的第二导电类型的高浓度源区域。低浓度源极区域的扩散深度等于MOSFET的源极/漏极区域的扩散深度。

2. 发明授权

US07851871B2 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07851871B2
公开(公告)日：2010-12-14
申请号：US12242142
申请日：2008-09-30
申请人： Yuji Harada , Kazuyuki Sawada , Masahiko Niwayama , Masaaki Okita
发明人： Yuji Harada , Kazuyuki Sawada , Masahiko Niwayama , Masaaki Okita
IPC分类号： H01L29/768
CPC分类号： H01L21/823462 , H01L21/823418
摘要： A high-voltage transistor and a peripheral circuit including a second conductivity type MOSFET are provided together on a first conductivity type semiconductor substrate. The high-voltage transistor includes: a low concentration drain region of a second conductivity type formed in the semiconductor substrate; a low concentration source region of a second conductivity type formed in the semiconductor substrate and spaced apart from the low concentration drain region; and a high concentration source region of a second conductivity type having a diffusion depth deeper than that of the low concentration source region. A diffusion depth of the low concentration source region is equal to that of source/drain regions of the MOSFET.
摘要翻译：在第一导电型半导体基板上一起设置高压晶体管和包括第二导电型MOSFET的外围电路。高电压晶体管包括：形成在半导体衬底中的第二导电类型的低浓度漏极区域; 形成在半导体衬底中并与低浓度漏极区隔开的第二导电类型的低浓度源区; 以及具有比低浓度源区域的扩散深度更深的扩散深度的第二导电类型的高浓度源区域。低浓度源极区域的扩散深度等于MOSFET的源极/漏极区域的扩散深度。

3. 发明申请

US20100001315A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20100001315A1
公开(公告)日：2010-01-07
申请号：US12473604
申请日：2009-05-28
申请人： Masaaki OKITA , Kazuyuki Sawada , Yuji Harada , Saichirou Kaneko , Hiroto Yamagiwa
发明人： Masaaki OKITA , Kazuyuki Sawada , Yuji Harada , Saichirou Kaneko , Hiroto Yamagiwa
IPC分类号： H01L29/739 , H01L29/78
CPC分类号： H01L29/0847 , H01L29/0634 , H01L29/0692 , H01L29/7393 , H01L29/7835 , H01L2029/42388 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a first diffusion region of a second conductivity type formed in an upper portion of a semiconductor substrate of a first conductivity type, a second diffusion region formed in a surface portion of the first diffusion region, a third diffusion region of the second conductivity type formed a predetermined distance spaced apart from the second diffusion region in the surface portion of the semiconductor substrate, a fourth diffusion region of the first conductivity type formed adjacent to the third diffusion region and electrically connected to the third diffusion region, a gate electrode formed on a part between the first diffusion region and the third diffusion region, and an insulating film formed thereon. The impurity concentration of the first diffusion region is set higher than an impurity concentration at which a depletion region extending from an junction interface between the first diffusion region and the semiconductor substrate is formed in a part of the first diffusion region which is between the second diffusion region and the gate electrode when a voltage is applied to the second diffusion region.
摘要翻译：半导体器件包括形成在第一导电类型的半导体衬底的上部中的第二导电类型的第一扩散区域，形成在第一扩散区域的表面部分中的第二扩散区域，第二扩散区域的第二扩散区域在半导体衬底的表面部分形成与第二扩散区间隔开的预定距离的导电类型，与第三扩散区相邻形成并与第三扩散区电连接的第一导电类型的第四扩散区，栅电极形成在第一扩散区域和第三扩散区域之间的部分上，以及形成在其上的绝缘膜。将第一扩散区域的杂质浓度设定为高于从第一扩散区域和半导体衬底之间的结界面延伸的耗尽区域形成在第一扩散区域的位于第二扩散区域的部分之间的杂质浓度区域和栅电极，当电压施加到第二扩散区域时。

4. 发明授权

US06915517B1 Digital signal processor 失效
标题翻译：数字信号处理器
公开(公告)号：US06915517B1
公开(公告)日：2005-07-05
申请号：US09786482
申请日：2000-07-05
申请人： Yasushi Imamura , Takao Inoue , Masaaki Okita
发明人： Yasushi Imamura , Takao Inoue , Masaaki Okita
IPC分类号： G06F15/16 , G06F9/30 , G06F9/318 , G06F9/32 , G06F9/38 , G06F9/46 , G06F9/48 , G06F15/177 , G11B7/09 , G11B21/10
CPC分类号： G06F9/3885 , G06F9/30079 , G06F9/3851
摘要： A digital signal processor comprises an arithmetic device 12 wherein a reservation processing register 26, to which setting to which from the arithmetic device 11 is possible and which has a construction for storing an address and an execution mode as a task list 18, and a clear circuit 27 for clearing the execution mode when the address in the reservation processing register 26 is copied to a program counter 21, are newly added.Threreby, in the digital signal processor comprising two arithmetic devices, it is possible to remove the processing waiting time as well as to change the processing order at respective arithmetic devices.
摘要翻译：数字信号处理器包括运算装置12，其中预约处理寄存器26可以从运算装置11向其设置并具有用于存储作为任务列表18的地址和执行模式的结构，以及清除当将预约处理寄存器26中的地址复制到程序计数器21时，用于清除执行模式的电路27被新增。 Threreby在包括两个算术装置的数字信号处理器中，可以消除处理等待时间以及改变各运算装置处理顺序。

5. 发明授权

US06687202B1 Pickup control device for optical disk drive which adjusts loop gain or determines sample rate 失效
标题翻译：用于光盘驱动器的拾取控制装置，其调节环路增益或确定采样率
公开(公告)号：US06687202B1
公开(公告)日：2004-02-03
申请号：US09720547
申请日：2001-03-02
申请人： Takahiro Watanabe , Yasushi Imamura , Masaaki Okita , Yuichi Kobayashi
发明人： Takahiro Watanabe , Yasushi Imamura , Masaaki Okita , Yuichi Kobayashi
IPC分类号： G11B700
CPC分类号： G11B7/0941
摘要： In an optical disk drive having the structure of rotating an optical disk under the alternative control of CAV or CLV, when the optical disk is rotated under the CLV control, the loop gains for at least one of the focus servo system and the tracking servo system for controlling the operation of the pickup of the optical disk drive are adjusted based on angular velocity detected by an angular velocity detector which is also used for rotating the optical disk under the CAV control, and, when the optical disk is rotated under the CAV control, the loop gains for at least one of the focus servo system and the tracking servo system are adjusted based on linear velocity detected by a linear velocity detector which is also used for rotating the optical disk under CLV control. The above structure enables the effective saving of electricity and cost in the optical disk drive.
摘要翻译：在具有在CAV或CLV的替代控制下旋转光盘的结构的光盘驱动器中，当光盘在CLV控制下旋转时，聚焦伺服系统和跟踪伺服系统中的至少一个的环路增益用于控制光盘驱动器的拾取器的操作基于由CAV控制下也用于旋转光盘的角速度检测器检测的角速度被调整，并且当光盘在CAV控制下旋转时基于在线速度检测器检测到的线速度来调整聚焦伺服系统和跟踪伺服系统中的至少一个的回路增益，线速度检测器也用于在CLV控制下旋转光盘。上述结构能够有效节省光盘驱动器中的电力和成本。

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