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1. 发明授权

US07567037B2 High frequency power supply device and plasma generator 有权
标题翻译：高频电源装置和等离子发生器
公开(公告)号：US07567037B2
公开(公告)日：2009-07-28
申请号：US10542289
申请日：2004-01-15
申请人： Yuichi Setsuhara , Tatsuo Shoji , Masayoshi Kamai
发明人： Yuichi Setsuhara , Tatsuo Shoji , Masayoshi Kamai
IPC分类号： H05H1/00
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/321 , H01J37/3299 , H05H1/46
摘要： A high frequency power supplying device and a plasma generation device using the same includes: two or more inductive antennas; high frequency power sources, respectively supplying power to the antennas; and a vacuum chamber on which the antennas are provided so as to generate a plasma by inductive coupling with high frequency power, wherein each of the high frequency power sources is positioned close to a corresponding antenna. On this account, it is possible to reduce unevenness in high frequency voltages generated in the antennas. Thus, even when a diameter and a volume of the plasma generation section are made larger, it is possible to generate much more uniform plasma, thereby stabilizing (i) thin film formation processes based on the plasma and (ii) plasma ion implantation processes.
摘要翻译：高频供电装置和使用该高频电力装置的等离子体产生装置包括：两个或更多个电感天线; 高频电源，分别向天线供电; 以及真空室，其上设置天线，以便通过高频电力的感应耦合产生等离子体，其中每个高频电源被定位成靠近对应的天线。因此，可以减少在天线中产生的高频电压的不均匀性。因此，即使当等离子体产生部分的直径和体积更大时，也可以产生更均匀的等离子体，从而稳定（i）基于等离子体的薄膜形成过程和（ii）等离子体离子注入工艺。

2. 发明申请

US20060057854A1 High frequency power supply device and plasma generator 有权
公开(公告)号：US20060057854A1
公开(公告)日：2006-03-16
申请号：US10542289
申请日：2004-01-15
申请人： Yuichi Setsuhara , Tatsuo Shoji , Masayoshi Kamai
发明人： Yuichi Setsuhara , Tatsuo Shoji , Masayoshi Kamai
IPC分类号： H01L21/302
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/321 , H01J37/3299 , H05H1/46
摘要： A high frequency power supplying device and a plasma generation device using the same includes: two or more inductive antennas; high frequency power sources, respectively supplying power to the antennas; and a vacuum chamber on which the antennas are provided so as to generate a plasma by inductive coupling with high frequency power, wherein each of the high frequency power sources is positioned close to a corresponding antenna. On this account, it is possible to reduce unevenness in high frequency voltages generated in the antennas. Thus, even when a diameter and a volume of the plasma generation section are made larger, it is possible to generate much more uniform plasma, thereby stabilizing (i) thin film formation processes based on the plasma and (ii) plasma ion implantation processes.

3. 发明授权

US08444806B2 Plasma generator, plasma control method and method of producing substrate 有权
标题翻译：等离子体发生器，等离子体控制方法及其制造方法
公开(公告)号：US08444806B2
公开(公告)日：2013-05-21
申请号：US12836161
申请日：2010-07-14
申请人： Shoji Miyake , Akinori Ebe , Tatsuo Shoji , Yuichi Setsuhara
发明人： Shoji Miyake , Akinori Ebe , Tatsuo Shoji , Yuichi Setsuhara
IPC分类号： C23C16/00 , C23C15/00 , H01L21/306 , H05H1/24
CPC分类号： H01J37/321 , H05H1/46 , H05H2001/4667
摘要： The present invention aims to provide a plasma generator capable of creating a spatially uniform distribution of high-density plasma. This object is achieved by the following construction. Multiple antennas are located on the sidewall of a vacuum chamber, and a RF power source is connected to three or four antennas in parallel via a plate-shaped conductor. The length of the conductor of each antenna is shorter than the quarter wavelength of the induction electromagnetic wave generated within the vacuum chamber. Setting the length of the conductor of the antenna in such a manner prevents the occurrence of a standing wave and thereby maintains the uniformity of the plasma within the vacuum chamber. In addition, the plate-shaped conductor improves the heat-releasing efficiency, which also contributes to the suppression of the impedance.
摘要翻译：本发明的目的在于提供能够产生高密度等离子体的空间均匀分布的等离子体发生器。该目的通过以下结构实现。多个天线位于真空室的侧壁上，RF电源经由板状导体并联连接到三个或四个天线。每个天线的导体长度比真空室内产生的感应电磁波的四分之一波长短。以这种方式设置天线的导体的长度防止驻波的发生，从而保持等离子体在真空室内的均匀性。此外，板状导体提高了散热效率，这也有助于抑制阻抗。

4. 发明授权

US07785441B2 Plasma generator, plasma control method, and method of producing substrate 有权
标题翻译：等离子体发生器，等离子体控制方法和生产基板的方法
公开(公告)号：US07785441B2
公开(公告)日：2010-08-31
申请号：US10539254
申请日：2003-12-12
申请人： Shoji Miyake , Akinori Ebe , Tatsuo Shoji , Yuichi Setsuhara
发明人： Shoji Miyake , Akinori Ebe , Tatsuo Shoji , Yuichi Setsuhara
IPC分类号： H01L21/00 , C23C16/00 , C23C14/00
CPC分类号： H01J37/321 , H05H1/46 , H05H2001/4667
摘要： The present invention aims to provide a plasma generator capable of creating a spatially uniform distribution of high-density plasma. This object is achieved by the following construction. Multiple antennas 16 are located on the sidewall of a vacuum chamber 11, and a RF power source is connected to three or four antennas 16 in parallel via a plate-shaped conductor 19. The length of the conductor of each antenna 16 is shorter than the quarter wavelength of the induction electromagnetic wave generated within the vacuum chamber. Setting the length of the conductor of the antenna in such a manner prevents the occurrence of a standing wave and thereby maintains the uniformity of the plasma within the vacuum chamber. In addition, the plate-shaped conductor 19 improves the heat-releasing efficiency, which also contributes to the suppression of the impedance.
摘要翻译：本发明的目的在于提供能够产生高密度等离子体的空间均匀分布的等离子体发生器。该目的通过以下结构实现。多个天线16位于真空室11的侧壁上，RF电源通过板状导体19并联连接到三个或四个天线16.每个天线16的导体的长度比在真空室内产生的感应电磁波的四分之一波长。以这种方式设置天线的导体的长度防止驻波的发生，从而保持等离子体在真空室内的均匀性。此外，板状导体19提高散热效率，这也有助于抑制阻抗。

5. 发明授权

US07098599B2 Plasma generator 有权
标题翻译：等离子发生器
公开(公告)号：US07098599B2
公开(公告)日：2006-08-29
申请号：US10250385
申请日：2000-12-27
申请人： Shoji Miyake , Tatsuo Shoji , Yuichi Setsuhara
发明人： Shoji Miyake , Tatsuo Shoji , Yuichi Setsuhara
IPC分类号： H01J7/24 , H01Q1/26
CPC分类号： H01J37/32174 , H01J37/321 , H05H1/46
摘要： The whole antenna conductor is housed in the interior of a vacuum container of a plasma generator thereby to eliminate the need for an insulating partition or a top plate so that the whole induction field radiated from the antenna can be effectively utilized. Furthermore, the occurrence of abnormal discharge is suppressed to stabilize a high-density plasma by reducing the inductance of the antenna and covering the antenna conductor with an insulator.
摘要翻译：整个天线导体容纳在等离子体发生器的真空容器的内部，从而不需要绝缘隔板或顶板，从而能够有效地利用从天线辐射的整个感应场。此外，通过减小天线的电感并用绝缘体覆盖天线导体，抑制异常放电的发生，从而稳定高密度等离子体。

6. 发明申请

US20060049138A1 Plasma generation device, plasma control method, and substrate manufacturing method 有权
标题翻译：等离子体发生装置，等离子体控制方法和基板制造方法
公开(公告)号：US20060049138A1
公开(公告)日：2006-03-09
申请号：US10539254
申请日：2003-12-12
申请人： Shoji Miyake , Akinori Ebe , Tatsuo Shoji , Yuichi Setsuhara
发明人： Shoji Miyake , Akinori Ebe , Tatsuo Shoji , Yuichi Setsuhara
IPC分类号： C23F1/00 , C23C16/00 , C03C25/68
CPC分类号： H01J37/321 , H05H1/46 , H05H2001/4667
摘要： The present invention aims to provide a plasma generator capable of creating a spatially uniform distribution of high-density plasma. This object is achieved by the following construction. Multiple antennas 16 are located on the sidewall of a vacuum chamber 11, and a RF power source is connected to three or four antennas 16 in parallel via a plate-shaped conductor 19. The length of the conductor of each antenna 16 is shorter than the quarter wavelength of the induction electromagnetic wave generated within the vacuum chamber. Setting the length of the conductor of the antenna in such a manner prevents the occurrence of a standing wave and thereby maintains the uniformity of the plasma within the vacuum chamber. In addition, the plate-shaped conductor 19 improves the heat-releasing efficiency, which also contributes to the suppression of the impedance.
摘要翻译：本发明的目的在于提供能够产生高密度等离子体的空间均匀分布的等离子体发生器。该目的通过以下结构实现。多个天线16位于真空室11的侧壁上，RF电源通过板状导体19并联连接到三个或四个天线16。每个天线16的导体的长度比真空室内产生的感应电磁波的四分之一波长短。以这种方式设置天线的导体的长度防止驻波的发生，从而保持等离子体在真空室内的均匀性。此外，板状导体19提高散热效率，这也有助于抑制阻抗。

7. 发明申请

US20100304046A1 PLASMA GENERATOR, PLASMA CONTROL METHOD AND METHOD OF PRODUCING SUBSTRATE 有权
标题翻译：等离子体发生器，等离子体控制方法和生产基材的方法
公开(公告)号：US20100304046A1
公开(公告)日：2010-12-02
申请号：US12836161
申请日：2010-07-14
申请人： Shoji Miyake , Akinori Ebe , Tatsuo Shoji , Yuichi Setsuhara
发明人： Shoji Miyake , Akinori Ebe , Tatsuo Shoji , Yuichi Setsuhara
IPC分类号： C23C16/52 , C23C16/00 , C23C16/505
CPC分类号： H01J37/321 , H05H1/46 , H05H2001/4667
摘要： The present invention aims to provide a plasma generator capable of creating a spatially uniform distribution of high-density plasma. This object is achieved by the following construction. Multiple antennas are located on the sidewall of a vacuum chamber, and a RF power source is connected to three or four antennas in parallel via a plate-shaped conductor. The length of the conductor of each antenna is shorter than the quarter wavelength of the induction electromagnetic wave generated within the vacuum chamber. Setting the length of the conductor of the antenna in such a manner prevents the occurrence of a standing wave and thereby maintains the uniformity of the plasma within the vacuum chamber. In addition, the plate-shaped conductor improves the heat-releasing efficiency, which also contributes to the suppression of the impedance.
摘要翻译：本发明的目的在于提供能够产生高密度等离子体的空间均匀分布的等离子体发生器。该目的通过以下结构实现。多个天线位于真空室的侧壁上，RF电源经由板状导体并联连接到三个或四个天线。每个天线的导体长度比真空室内产生的感应电磁波的四分之一波长短。以这种方式设置天线的导体的长度防止驻波的发生，从而保持等离子体在真空室内的均匀性。此外，板状导体提高了散热效率，这也有助于抑制阻抗。

8. 发明申请

US20100232559A1 ION GENERATING DEVICE AND NEUTRON GENERATING APPARATUS 审中-公开
标题翻译：离子发生装置和中子发生装置
公开(公告)号：US20100232559A1
公开(公告)日：2010-09-16
申请号：US12303861
申请日：2007-06-07
申请人： Masayuki Takeishi , Masanori Shimazaki , Masahito Shima , Tadashi Hasegawa , Tetsuo Iguchi , Tatsuo Shoji , Kazuya Nishimura
发明人： Masayuki Takeishi , Masanori Shimazaki , Masahito Shima , Tadashi Hasegawa , Tetsuo Iguchi , Tatsuo Shoji , Kazuya Nishimura
IPC分类号： H05H3/06 , H05H1/46
CPC分类号： H05H3/06 , H01J27/18 , H05H1/46
摘要： A neutron generating apparatus includes an ion generating device. The ion generating device includes an ion generating tube to which deuterium gas or tritium gas is supplied, a magnet arranged outside of the ion generating tube for generating a magnetic field in the ion generating tube, a plasma generating antenna arranged outside of the ion generating tube for generating an electric field in the ion generating tube, and an RF power source that supplies high frequency power to the plasma generating antenna. The RF power source supplies the high frequency power to the plasma generating antenna by controlling the pulse thereof so that an unsteady state of plasma is generated repetitively in the ion generating tube.
摘要翻译：中子发生装置包括离子产生装置。离子产生装置包括：供给氘气或氚气体的离子产生管，设置在离子产生管的外侧的磁体，用于在离子产生管中产生磁场;等离子体发生天线，配置在离子产生管的外侧用于在离子产生管中产生电场，以及向等离子体产生天线提供高频功率的RF电源。 RF电源通过控制其脉冲向等离子体发生天线提供高频功率，从而在离子产生管中重复地产生等离子体的不稳定状态。

9. 发明授权

US5091049A High density plasma deposition and etching apparatus 失效
标题翻译：高密度等离子体沉积和蚀刻装置
公开(公告)号：US5091049A
公开(公告)日：1992-02-25
申请号：US545636
申请日：1990-06-29
申请人： Gregor Campbell , Robert W. Conn , Tatsuo Shoji
发明人： Gregor Campbell , Robert W. Conn , Tatsuo Shoji
IPC分类号： H01J37/32 , H05H1/46
CPC分类号： H01J37/321 , H01J37/3211 , H01J37/3266 , H01J37/32688 , H05H1/46
摘要： The high density RF plasma generator of this invention uses special antenna configurations (15) to launch RF waves at low frequency such as 13.56 MHz along a magnetic field supplied by an external magnetic field generator (16.17) in a discharge space (14) where the working gas is introduced and which is used alone or in conjunction with a process chamber (18) where specimen substrates (20) are located to either deposit or etch films from a substrate or to sputter deposit films to a substrate. The plasma etching, deposition and/or sputtering system comprises the high density RF plasma generator, the external magnetic field, the gas injection and control system, the antenna system (15) and associated power supplies (48), the process chamber (18), and the means to couple plasma from the generator to substrates or targets, including magnetic means (36) to enhance plasma uniformity at the substrates (20) or targets (92).
摘要翻译：本发明的高密度RF等离子体发生器使用特殊的天线配置（15），以便在放电空间（14）中由外部磁场发生器（16.17）提供的磁场，在诸如13.56MHz的低频发射RF波，其中引入工作气体，其单独使用或与处理室（18）一起使用，其中样品基底（20）位于沉积或蚀刻来自基底的膜或者将沉积膜溅射到基底。等离子体蚀刻，沉积和/或溅射系统包括高密度RF等离子体发生器，外部磁场，气体注入和控制系统，天线系统（15）和相关联的电源（48），处理室（18）以及用于将来自发生器的等离子体耦合到衬底或靶的装置，包括磁性装置（36）以增强衬底（20）或靶（92）处的等离子体均匀性。

10. 发明授权

US4593493A Access door 失效
标题翻译：通行门
公开(公告)号：US4593493A
公开(公告)日：1986-06-10
申请号：US619270
申请日：1984-06-11
申请人： Hiromitsu Naka , Takehiko Okushima , Tatsuo Shoji
发明人： Hiromitsu Naka , Takehiko Okushima , Tatsuo Shoji
IPC分类号： E04B9/00 , E04B9/18 , E04F19/08 , E05D3/06 , E06B5/01 , E05D15/40
CPC分类号： E05D3/14 , E04B9/003 , E04F19/08 , E06B5/01 , E05Y2900/131 , E05Y2900/612
摘要： An access door to be installed on the ceiling or the like of a building which essentially comprises an outer square frame adapted to be installed in an opening formed at said installation area; an inner square frame pivotally connected to said outer frame for movement between open and closed positions; a pair of link hinge means provided on each of two selected sides of said outer frame to pivotally connect said frame to said outer frame; and a lock means for locking said inner frame to said outer frame as the inner frame is in its closed position.The inner frame has a joint finishing flange at the peripheral edge thereof to conceal the peripheral edge of said outer frame as the inner frame is in its closed position. Also, each of the link hinge means essentially comprises a pair of parallel long links in which the leading end of the lower link has a swing control arm, a short follower link for pivotally connecting the leading ends of the long links, a link guide upwardly pushing the swing control arm as the inner frame is closed, and a bracket connecting the long links together and securing the link hinge means to the outer frame.
摘要翻译：一种安装在建筑物的天花板等上的通道门，其基本上包括适于安装在形成于所述安装区域的开口中的外侧框架; 枢转地连接到所述外框架以在打开和关闭位置之间移动的内方框; 一对连杆铰链装置，设置在所述外框架的两个选定侧的每一个上，以将所述框架枢转地连接到所述外框架; 以及锁定装置，用于当内框架处于其关闭位置时将所述内框架锁定到所述外框架。内框架在其周缘处具有接合精加工凸缘，以在内框架处于其关闭位置时隐藏所述外框架的周边边缘。此外，每个连杆铰链装置基本上包括一对平行的长连杆，其中下连杆的前端具有摆动控制臂，用于枢转地连接长连杆的前端的短随动连杆，向上的连杆导向件当内框被关闭时推动摆动控制臂，以及将长连杆连接在一起并将连杆铰链装置固定到外框的支架。

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