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1. 发明申请

US20160229710A1 Cutting Fluid Processing Device 审中-公开
标题翻译：切削液加工装置
公开(公告)号：US20160229710A1
公开(公告)日：2016-08-11
申请号：US15016481
申请日：2016-02-05
申请人： Yuan He , Xiaokun He
发明人： Yuan He , Xiaokun He
IPC分类号： C02F1/32 , B23Q11/10
CPC分类号： C02F1/325 , B23Q11/1069 , C02F2103/16 , C02F2201/3223 , C02F2303/24
摘要： A cutting fluid processing device for recycling used cutting fluid. The cutting fluid processing device includes a container having a hollow interior volume, a fluid inlet, and a fluid outlet. The container includes an ultraviolet light source therein, wherein the ultraviolet light source is adapted to sanitize the cutting fluid by killing bacteria therein. The container further includes a waste outlet for removing contaminants from the container. The container further includes a filter for use in separating contaminants or particulates from the cutting fluid prior to escaping the container via the fluid outlet. Thus, the cutting fluid processing device allows cutting fluid to be treated so that it can be reused.
摘要翻译：一种用于再循环使用的切削液的切削液处理装置。切削液处理装置包括具有中空内部容积的容器，流体入口和流体出口。容器中包括紫外光源，其中紫外光源适于通过杀死切割液来消毒切割液。容器还包括用于从容器中除去污染物的废物出口。容器还包括用于在经由流体出口逸出容器之前从切削液中分离污染物或微粒的过滤器。因此，切削液处理装置允许切削液被处理以使其可以重复使用。

2. 发明授权

US08883372B2 Reticle with composite polarizer and method of simultaneous optimization of imaging of a set of different patterns 有权
标题翻译：具有复合偏振片的光罩和同时优化一组不同图案成像的方法
公开(公告)号：US08883372B2
公开(公告)日：2014-11-11
申请号：US13489437
申请日：2012-06-05
申请人： Scott Light , Dan Millward , Anton Devilliers , Yuan He , Michael Hyatt , Lijing Gou , Kaveri Jain , Zishu Zhang , Jianming Zhou
发明人： Scott Light , Dan Millward , Anton Devilliers , Yuan He , Michael Hyatt , Lijing Gou , Kaveri Jain , Zishu Zhang , Jianming Zhou
IPC分类号： G03F1/00
CPC分类号： G03F1/50
摘要： A reticle with a composite polarizer includes: a transparent substrate; a patterned layer disposed on said transparent substrate; and a polarizing filter disposed on said transparent substrate, wherein said transparent substrate is substantially transparent with respect to illumination light, said patterned layer is partially opaque with respect to said illumination light, and said polarizing filter is capable of selectively polarizing said illumination light.
摘要翻译：具有复合偏振片的掩模版包括：透明基板; 设置在所述透明基板上的图案层; 以及设置在所述透明基板上的偏振滤光器，其中所述透明基板相对于照明光基本上是透明的，所述图案化层相对于所述照明光部分不透明，并且所述偏振滤光片能够选择性地偏振所述照明光。

3. 发明授权

US08845908B2 Reticles, and methods of mitigating asymmetric lens heating in photolithography 有权
标题翻译：网纹和减轻光刻中不对称透镜加热的方法
公开(公告)号：US08845908B2
公开(公告)日：2014-09-30
申请号：US12862524
申请日：2010-08-24
申请人： Scott L. Light , Dan Millward , Yuan He , Kaveri Jain , Lijing Gou , Zishu Zhang , Anton deVilliers , Michael Hyatt , Jianming Zhou
发明人： Scott L. Light , Dan Millward , Yuan He , Kaveri Jain , Lijing Gou , Zishu Zhang , Anton deVilliers , Michael Hyatt , Jianming Zhou
IPC分类号： G03F1/38 , G03F7/20
CPC分类号： G03F7/70741 , G03F1/38 , G03F7/70433 , G03F7/70891
摘要： A method of mitigating asymmetric lens heating in photolithographically patterning a photo-imagable material using a reticle includes determining where first hot spot locations are expected to occur on a lens when using a reticle to pattern a photo-imagable material. The reticle is then fabricated to include non-printing features within a non-printing region of the reticle which generate additional hot spot locations on the lens when using the reticle to pattern the photo-imagable material. Other implementations are contemplated, including reticles which may be independent of method of use or fabrication.
摘要翻译：减轻非对称透镜加热的方法是使用光罩光刻地图案化可光成像的材料，包括确定在使用掩模版图案化可成像材料时期望第一热点位置在透镜上发生的位置。然后制造掩模版以在掩模版的非打印区域内包括非打印特征，当使用掩模版来图案化可光成像材料时，在透镜上产生额外的热点位置。考虑了其他实施方式，包括可以独立于使用或制造方法的标线。

4. 发明授权

US08658336B2 Methods of correcting for variation across substrates during photolithography 有权
标题翻译：在光刻期间校正基板之间的变化的方法
公开(公告)号：US08658336B2
公开(公告)日：2014-02-25
申请号：US13460765
申请日：2012-04-30
申请人： Yuan He , Scott L. Light , Tim H. Bossart
发明人： Yuan He , Scott L. Light , Tim H. Bossart
IPC分类号： G03C5/00
CPC分类号： G03F7/70141 , G03F7/70616
摘要： Some embodiments include methods for correcting for variation across substrates. A difference map is created to indicate differences between a desired pattern that is to be formed across the substrates utilizing photolithographic processing and a signature pattern representing the actual pattern formed with an initial setting of illumination optics. Modifications to the illumination optics are determined for improving problematic regions identified in the difference map, and the illumination optics are then modified. Substrates are photolithographically processed utilizing the modified illumination optics.
摘要翻译：一些实施例包括用于校正跨衬底的变化的方法。创建差异图以表示使用光刻处理在待形成的基板之间的差异以及表示利用照明光学元件的初始设置形成的实际图案的签名图案之间的差异。确定对照明光学器件的修改以改善在差异图中识别的有问题的区域，然后修改照明光学器件。使用改进的照明光学器件对基片进行光刻处理。

5. 发明授权

US08507191B2 Methods of forming a patterned, silicon-enriched developable antireflective material and semiconductor device structures including the same 有权
标题翻译：形成图案化的富含硅的可显影抗反射材料的方法和包括其的半导体器件结构
公开(公告)号：US08507191B2
公开(公告)日：2013-08-13
申请号：US12986806
申请日：2011-01-07
申请人： Dan B. Millward , Yuan He , Lijing Gou , Zishu Zhang , Anton J. deVilliers , Jianming Zhou , Kaveri Jain , Scott Light , Michael Hyatt
发明人： Dan B. Millward , Yuan He , Lijing Gou , Zishu Zhang , Anton J. deVilliers , Jianming Zhou , Kaveri Jain , Scott Light , Michael Hyatt
IPC分类号： G03F7/26
CPC分类号： H01L21/0276 , G03F7/0752 , G03F7/091 , Y10T428/24802
摘要： Methods of forming a patterned, silicon-enriched developable antireflective material. One such method comprises forming a silicon-enriched developable antireflective composition. The silicon-enriched developable antireflective composition comprises a silicon-enriched polymer and a crosslinking agent. The silicon-enriched polymer and the crosslinking agent are reacted to form a silicon-enriched developable antireflective material that is insoluble and has at least one acid-sensitive moiety. A positive-tone photosensitive material, such as a positive-tone photoresist, is formed over the silicon-enriched developable antireflective material and regions thereof are exposed to radiation. The exposed regions of the positive-tone photosensitive material and underlying regions of the silicon-enriched developable antireflective material are removed. Additional methods are disclosed, as are semiconductor device structures including a silicon-enriched developable antireflective material.
摘要翻译：形成图案化的富含硅的可显影抗反射材料的方法。一种这样的方法包括形成富含硅的可显影抗反射组合物。富含硅的可显影抗反射组合物包含富含硅的聚合物和交联剂。使富含硅的聚合物和交联剂反应以形成不溶性且具有至少一个酸敏感部分的富含硅的可显影抗反射材料。在富含硅的可显影抗反射材料上形成正色感光材料，例如正色调光致抗蚀剂，并将其区域暴露于辐射。去除了正色感光材料的曝光区域和富含硅的可显影抗反射材料的下面的区域。公开了另外的方法，半导体器件结构包括富含硅的可显影抗反射材料。

6. 发明申请

US20120276909A1 Method and User Equipment for Cell Selection of Heterogeneous Network 有权
标题翻译：用于异构网络小区选择的方法和用户设备
公开(公告)号：US20120276909A1
公开(公告)日：2012-11-01
申请号：US13548140
申请日：2012-07-12
申请人： Dengkun Xiao , Yuan He , Tongwei Qu , Xin Xiong
发明人： Dengkun Xiao , Yuan He , Tongwei Qu , Xin Xiong
IPC分类号： H04W36/36 , H04W88/02
CPC分类号： H04W48/16 , H04W48/20 , Y02D70/1242 , Y02D70/1262 , Y02D70/1264
摘要： Embodiments of the present invention provide a method and a user equipment for cell selection of a heterogeneous network. The UE selects, a cell with a highest signal measurement value in a carrier frequency synchronizes to the cell, and receives broadcast information of the cell. If the cell is a macro cell, the broadcast information carries an extended indicator bit and the extended indicator bit is used to identify whether a low-power cell exists in the coverage of the macro cell. If the extended indicator bit identifies that the low-power cell exists in the coverage of the macro cell, the low-power cell in the macro cell is searched for, and if a low-power cell in the macro cell satisfies an S rule, the UE selects the lower-power cell as a serving cell and camps.
摘要翻译：本发明的实施例提供了用于异构网络的小区选择的方法和用户设备。 UE选择载波频率最高的信号测量值的小区与小区同步，并且接收小区的广播信息。如果小区是宏小区，则广播信息携带扩展指示符比特，并且扩展指示符比特用于识别宏小区的覆盖范围内是否存在低功率小区。如果扩展指示符比特识别到宏小区的覆盖范围内存在低功率小区，则搜索宏小区中的低功率小区，并且如果宏小区中的低功率小区满足S规则， UE选择低功率小区作为服务小区并进行营地。

7. 发明申请

US20120177891A1 METHODS OF FORMING A PATTERNED, SILICON-ENRICHED DEVELOPABLE ANTIREFLECTIVE MATERIAL AND SEMICONDUCTOR DEVICE STRUCTURES INCLUDING THE SAME 有权
标题翻译：形成图案的有机硅增强的可开发抗反射材料和包括其中的半导体器件结构的方法
公开(公告)号：US20120177891A1
公开(公告)日：2012-07-12
申请号：US12986806
申请日：2011-01-07
申请人： Dan B. Millward , Yuan He , Lijing Gou , Zishu Zhang , Anton J. deVilliers , Jianming Zhou , Kaveri Jain , Scott Light , Michael Hyatt
发明人： Dan B. Millward , Yuan He , Lijing Gou , Zishu Zhang , Anton J. deVilliers , Jianming Zhou , Kaveri Jain , Scott Light , Michael Hyatt
IPC分类号： B32B3/10 , H01L21/306
CPC分类号： H01L21/0276 , G03F7/0752 , G03F7/091 , Y10T428/24802
摘要： Methods of forming a patterned, silicon-enriched developable antireflective material. One such method comprises forming a silicon-enriched developable antireflective composition. The silicon-enriched developable antireflective composition comprises a silicon-enriched polymer and a crosslinking agent. The silicon-enriched polymer and the crosslinking agent are reacted to form a silicon-enriched developable antireflective material that is insoluble and has at least one acid-sensitive moiety. A positive-tone photosensitive material, such as a positive-tone photoresist, is formed over the silicon-enriched developable antireflective material and regions thereof are exposed to radiation. The exposed regions of the positive-tone photosensitive material and underlying regions of the silicon-enriched developable antireflective material are removed. Additional methods are disclosed, as are semiconductor device structures including a silicon-enriched developable antireflective material.
摘要翻译：形成图案化的富含硅的可显影抗反射材料的方法。一种这样的方法包括形成富含硅的可显影抗反射组合物。富含硅的可显影抗反射组合物包含富含硅的聚合物和交联剂。使富含硅的聚合物和交联剂反应以形成不溶性且具有至少一个酸敏感部分的富含硅的可显影抗反射材料。在富含硅的可显影抗反射材料上形成正色感光材料，例如正色调光致抗蚀剂，并将其区域暴露于辐射。去除了正色感光材料的曝光区域和富含硅的可显影抗反射材料的下面的区域。公开了另外的方法，半导体器件结构包括富含硅的可显影抗反射材料。

8. 发明申请

US20120015486A1 Semiconductor Constructions And Methods Of Forming Patterns 有权
标题翻译：半导体结构和形成方式
公开(公告)号：US20120015486A1
公开(公告)日：2012-01-19
申请号：US12836495
申请日：2010-07-14
申请人： Dan Millward , Kaveri Jain , Zishu Zhang , Lijing Gou , Anton de Villiers , Jianming Zhou , Yuan He , Michael Hyatt , Scott L. Light
发明人： Dan Millward , Kaveri Jain , Zishu Zhang , Lijing Gou , Anton de Villiers , Jianming Zhou , Yuan He , Michael Hyatt , Scott L. Light
IPC分类号： H01L21/768 , H01L21/82
CPC分类号： H01L21/76879 , H01L21/0337 , H01L21/31144 , H01L21/76816 , H01L27/0207 , H01L27/105 , H01L27/1052 , H01L27/10882 , H01L27/10888
摘要： Some embodiments include methods of forming patterns. A semiconductor substrate is formed to comprise an electrically insulative material over a set of electrically conductive structures. An interconnect region is defined across the electrically conductive structures, and regions on opposing sides of the interconnect region are defined as secondary regions. A two-dimensional array of features is formed over the electrically insulative material. The two-dimensional array extends across the interconnect region and across the secondary regions. A pattern of the two-dimensional array is transferred through the electrically insulative material of the interconnect region to form contact openings that extend through the electrically insulative material and to the electrically conductive structures, and no portions of the two-dimensional array of the secondary regions is transferred into the electrically insulative material.
摘要翻译：一些实施例包括形成图案的方法。半导体衬底被形成为在一组导电结构之上包括电绝缘材料。跨导电结构限定互连区域，并且互连区域的相对侧上的区域被定义为次级区域。特征的二维阵列形成在电绝缘材料上。二维阵列跨越互连区域并跨越次级区域延伸。二维阵列的图案通过互连区域的电绝缘材料转移以形成延伸穿过电绝缘材料和导电结构的接触开口，并且二次区域的二维阵列的任何部分被转移到电绝缘材料中。

9. 发明授权

US09235134B2 Lens heating compensation in photolithography 有权
标题翻译：光刻镜头加热补偿
公开(公告)号：US09235134B2
公开(公告)日：2016-01-12
申请号：US12857316
申请日：2010-08-16
申请人： Yuan He , Kaveri Jain , Lijing Gou , Zishu Zhang , Anton deVilliers , Michael Hyatt , Jianming Zhou , Scott Light , Dan Millward
发明人： Yuan He , Kaveri Jain , Lijing Gou , Zishu Zhang , Anton deVilliers , Michael Hyatt , Jianming Zhou , Scott Light , Dan Millward
IPC分类号： G03B27/42 , G03F7/20
CPC分类号： G03F7/70116 , G03F7/70891
摘要： Photolithographic apparatus and methods are disclosed. One such apparatus includes an optical path configured to provide a first diffraction pattern in a portion of an optical system and to provide a second diffraction pattern to the portion of the optical system after providing the first diffraction pattern. Meanwhile, one such method includes providing a first diffraction pattern onto a portion of an optical system, wherein a semiconductor article is imaged using the first diffraction pattern. A second diffraction pattern is also provided onto the portion of the optical system, but the second diffraction pattern is not used to image the semiconductor article.
摘要翻译：公开了光刻设备和方法。一种这样的设备包括光路，其被配置为在光学系统的一部分中提供第一衍射图案，并且在提供第一衍射图案之后，向光学系统的部分提供第二衍射图案。同时，一种这样的方法包括在光学系统的一部分上提供第一衍射图案，其中半导体制品使用第一衍射图案成像。第二衍射图案也提供到光学系统的部分上，但是第二衍射图案不用于对半导体制品进行成像。

10. 发明授权

US09213239B2 Methods of forming patterns for semiconductor device structures 有权
标题翻译：形成半导体器件结构图案的方法
公开(公告)号：US09213239B2
公开(公告)日：2015-12-15
申请号：US13746543
申请日：2013-01-22
申请人： Scott Light , Yuan He , Michael A. Many , Michael Hyatt
发明人： Scott Light , Yuan He , Michael A. Many , Michael Hyatt
IPC分类号： G03F7/22 , G03F7/20
CPC分类号： G03F7/0035 , G03F7/039 , G03F7/0392 , G03F7/0758 , G03F7/095 , G03F7/2022 , G03F7/32 , G03F7/322 , G03F7/325 , G03F7/405 , H01L21/0273 , H01L21/32139
摘要： Methods of forming a pattern in a semiconductor device structure include deprotecting an outer portion of a first photosensitive resist material, forming a second photosensitive resist material, exposing portions of the first and second photosensitive resist materials to radiation, and removing the deprotected outer portion of the first photosensitive resist material and the exposed portions of the first and second photosensitive resist materials. Additional methods include forming a first resist material over a substrate to include a first portion and a relatively thicker second portion, deprotecting substantially the entire first portion and an outer portion of the second portion while leaving an inner portion of the second portion protected, and forming a second resist material over the substrate. A portion of the second resist material is exposed to radiation, and deprotected and exposed portions of the first and second resist materials are removed.
摘要翻译：在半导体器件结构中形成图案的方法包括：使第一感光抗蚀剂材料的外部部分脱保护，形成第二感光抗蚀剂材料，将第一和第二光敏抗蚀剂材料的部分暴露于辐射，以及去除脱保护的外部部分第一光敏抗蚀剂材料和第一和第二光敏抗蚀剂材料的暴露部分。附加方法包括在衬底上形成第一抗蚀剂材料以包括第一部分和相对较厚的第二部分，基本上保护第二部分的整个第一部分和外部部分，同时留下第二部分的内部保护，并且形成在衬底上的第二抗蚀剂材料。第二抗蚀剂材料的一部分暴露于辐射，并且去除第一和第二抗蚀剂材料的去保护和暴露部分。

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