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1. 发明授权

US08486611B2 Semiconductor constructions and methods of forming patterns 有权
标题翻译：半导体结构和形成图案的方法
公开(公告)号：US08486611B2
公开(公告)日：2013-07-16
申请号：US12836495
申请日：2010-07-14
申请人： Dan Millward , Kaveri Jain , Zishu Zhang , Lijing Gou , Anton de Villiers , Jianming Zhou , Yuan He , Michael Hyatt , Scott L. Light
发明人： Dan Millward , Kaveri Jain , Zishu Zhang , Lijing Gou , Anton de Villiers , Jianming Zhou , Yuan He , Michael Hyatt , Scott L. Light
IPC分类号： G03F7/26
CPC分类号： H01L21/76879 , H01L21/0337 , H01L21/31144 , H01L21/76816 , H01L27/0207 , H01L27/105 , H01L27/1052 , H01L27/10882 , H01L27/10888
摘要： Some embodiments include methods of forming patterns. A semiconductor substrate is formed to comprise an electrically insulative material over a set of electrically conductive structures. An interconnect region is defined across the electrically conductive structures, and regions on opposing sides of the interconnect region are defined as secondary regions. A two-dimensional array of features is formed over the electrically insulative material. The two-dimensional array extends across the interconnect region and across the secondary regions. A pattern of the two-dimensional array is transferred through the electrically insulative material of the interconnect region to form contact openings that extend through the electrically insulative material and to the electrically conductive structures, and no portions of the two-dimensional array of the secondary regions is transferred into the electrically insulative material.
摘要翻译：一些实施例包括形成图案的方法。半导体衬底被形成为在一组导电结构之上包括电绝缘材料。跨导电结构限定互连区域，并且互连区域的相对侧上的区域被定义为次级区域。特征的二维阵列形成在电绝缘材料上。二维阵列跨越互连区域并跨越次级区域延伸。二维阵列的图案通过互连区域的电绝缘材料转移以形成延伸穿过电绝缘材料和导电结构的接触开口，并且二次区域的二维阵列的任何部分被转移到电绝缘材料中。

2. 发明申请

US20120015486A1 Semiconductor Constructions And Methods Of Forming Patterns 有权
标题翻译：半导体结构和形成方式
公开(公告)号：US20120015486A1
公开(公告)日：2012-01-19
申请号：US12836495
申请日：2010-07-14
申请人： Dan Millward , Kaveri Jain , Zishu Zhang , Lijing Gou , Anton de Villiers , Jianming Zhou , Yuan He , Michael Hyatt , Scott L. Light
发明人： Dan Millward , Kaveri Jain , Zishu Zhang , Lijing Gou , Anton de Villiers , Jianming Zhou , Yuan He , Michael Hyatt , Scott L. Light
IPC分类号： H01L21/768 , H01L21/82
CPC分类号： H01L21/76879 , H01L21/0337 , H01L21/31144 , H01L21/76816 , H01L27/0207 , H01L27/105 , H01L27/1052 , H01L27/10882 , H01L27/10888
摘要： Some embodiments include methods of forming patterns. A semiconductor substrate is formed to comprise an electrically insulative material over a set of electrically conductive structures. An interconnect region is defined across the electrically conductive structures, and regions on opposing sides of the interconnect region are defined as secondary regions. A two-dimensional array of features is formed over the electrically insulative material. The two-dimensional array extends across the interconnect region and across the secondary regions. A pattern of the two-dimensional array is transferred through the electrically insulative material of the interconnect region to form contact openings that extend through the electrically insulative material and to the electrically conductive structures, and no portions of the two-dimensional array of the secondary regions is transferred into the electrically insulative material.
摘要翻译：一些实施例包括形成图案的方法。半导体衬底被形成为在一组导电结构之上包括电绝缘材料。跨导电结构限定互连区域，并且互连区域的相对侧上的区域被定义为次级区域。特征的二维阵列形成在电绝缘材料上。二维阵列跨越互连区域并跨越次级区域延伸。二维阵列的图案通过互连区域的电绝缘材料转移以形成延伸穿过电绝缘材料和导电结构的接触开口，并且二次区域的二维阵列的任何部分被转移到电绝缘材料中。

3. 发明申请

US20120314196A1 LITHOGRAPHY WAVE-FRONT CONTROL SYSTEM AND METHOD 有权
标题翻译： LITHOGRAPHY波前控制系统和方法
公开(公告)号：US20120314196A1
公开(公告)日：2012-12-13
申请号：US13159245
申请日：2011-06-13
申请人： Yuan He , Jianming Zhou , Scott L. Light , Anton de Villiers , Kaveri Jain , Zishu Zhang , Dan Millward
发明人： Yuan He , Jianming Zhou , Scott L. Light , Anton de Villiers , Kaveri Jain , Zishu Zhang , Dan Millward
IPC分类号： G03F7/20 , G06F17/10
CPC分类号： G02B26/06 , G03F7/70091 , G03F7/70125 , G03F7/70258 , G03F7/70308 , G03F7/705 , G03F7/706
摘要： Some embodiments include system and methods to obtain information for adjusting variations in features formed on a substrate of a semiconductor device. Such methods can include determining a first pupil in an illumination system used to form a first feature, and determining a second pupil used to form a second feature. The methods can also include determining a pupil portion belonging to only one of the pupils, and generating a modified pupil portion from the pupil portion. Information associated with the modified pupil portion can be obtained for controlling a portion of a projection lens assembly of an illumination system. Other embodiments are described.
摘要翻译：一些实施例包括用于获得用于调整形成在半导体器件的衬底上的特征的变化的信息的系统和方法。这样的方法可以包括确定用于形成第一特征的照明系统中的第一光瞳，以及确定用于形成第二特征的第二光瞳。所述方法还可以包括确定属于仅一个瞳孔的瞳孔部分，并且从瞳孔部分产生修改的瞳孔部分。可以获得与修改的瞳孔部分相关联的信息，用于控制照明系统的投影透镜组件的一部分。描述其他实施例。

4. 发明申请

US20100144150A1 Methods of Fabricating Substrates 有权
标题翻译：制造基板的方法
公开(公告)号：US20100144150A1
公开(公告)日：2010-06-10
申请号：US12328435
申请日：2008-12-04
申请人： Scott Sills , Gurtej S. Sandhu , Anton de Villiers
发明人： Scott Sills , Gurtej S. Sandhu , Anton de Villiers
IPC分类号： H01L21/311
CPC分类号： H01L21/31138 , H01L21/0273 , H01L21/0337 , H01L21/0338
摘要： A method of fabricating a substrate includes forming first and second spaced features over a substrate. The first spaced features have elevationally outermost regions which are different in composition from elevationally outermost regions of the second spaced features. The first and second spaced features alternate with one another. Every other first feature is removed from the substrate and pairs of immediately adjacent second features are formed which alternate with individual of remaining of the first features. After such act of removing, the substrate is processed through a mask pattern comprising the pairs of immediately adjacent second features which alternate with individual of the remaining of the first features. Other embodiments are disclosed.
摘要翻译：一种制造衬底的方法包括在衬底上形成第一和第二间隔的特征。第一间隔的特征具有与第二间隔特征的垂直最外区域不同的高度最外的区域。第一和第二间隔的特征彼此交替。每个其他第一特征从衬底移除，并且形成直接相邻的第二特征对，其与第一特征的剩余部分的个体交替。在这样的去除动作之后，通过掩模图案来处理衬底，该掩模图案包括与第一特征剩余部分的个体交替的紧邻的第二特征对。公开了其他实施例。

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