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US09213239B2 Methods of forming patterns for semiconductor device structures 有权
标题翻译：形成半导体器件结构图案的方法
公开(公告)号：US09213239B2
公开(公告)日：2015-12-15
申请号：US13746543
申请日：2013-01-22
申请人： Scott Light , Yuan He , Michael A. Many , Michael Hyatt
发明人： Scott Light , Yuan He , Michael A. Many , Michael Hyatt
IPC分类号： G03F7/22 , G03F7/20
CPC分类号： G03F7/0035 , G03F7/039 , G03F7/0392 , G03F7/0758 , G03F7/095 , G03F7/2022 , G03F7/32 , G03F7/322 , G03F7/325 , G03F7/405 , H01L21/0273 , H01L21/32139
摘要： Methods of forming a pattern in a semiconductor device structure include deprotecting an outer portion of a first photosensitive resist material, forming a second photosensitive resist material, exposing portions of the first and second photosensitive resist materials to radiation, and removing the deprotected outer portion of the first photosensitive resist material and the exposed portions of the first and second photosensitive resist materials. Additional methods include forming a first resist material over a substrate to include a first portion and a relatively thicker second portion, deprotecting substantially the entire first portion and an outer portion of the second portion while leaving an inner portion of the second portion protected, and forming a second resist material over the substrate. A portion of the second resist material is exposed to radiation, and deprotected and exposed portions of the first and second resist materials are removed.
摘要翻译：在半导体器件结构中形成图案的方法包括：使第一感光抗蚀剂材料的外部部分脱保护，形成第二感光抗蚀剂材料，将第一和第二光敏抗蚀剂材料的部分暴露于辐射，以及去除脱保护的外部部分第一光敏抗蚀剂材料和第一和第二光敏抗蚀剂材料的暴露部分。附加方法包括在衬底上形成第一抗蚀剂材料以包括第一部分和相对较厚的第二部分，基本上保护第二部分的整个第一部分和外部部分，同时留下第二部分的内部保护，并且形成在衬底上的第二抗蚀剂材料。第二抗蚀剂材料的一部分暴露于辐射，并且去除第一和第二抗蚀剂材料的去保护和暴露部分。

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