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1. 发明申请

US20050001438A1 Robotic arm for preventing electrostatic damage 审中-公开
标题翻译：机器臂防止静电损伤
公开(公告)号：US20050001438A1
公开(公告)日：2005-01-06
申请号：US10772712
申请日：2004-02-05
申请人： Yu-Chou Lee , Ying-Ming Wu , Chien-Yu Chen
发明人： Yu-Chou Lee , Ying-Ming Wu , Chien-Yu Chen
IPC分类号： B25J11/00 , B65G49/06 , B65G49/07 , H01L21/677
CPC分类号： H01L21/67742 , B65G49/061
摘要： A robotic arm that has a main body and pads thereon can prevent electrostatic damage. These pads are used to carry substrates between and in processing machines. A material of these pads is the same as or similar to the material of the substrate to lower the amount of the electrostatic charges produced during the manufacturing process. Therefore, the electrostatic charges cannot damage the electronic devices on the substrate.
摘要翻译：具有主体和其上的垫的机器人手臂可以防止静电损伤。这些垫用于在处理机器之间和处理机器中携带衬底。这些焊盘的材料与衬底的材料相同或类似，以降低在制造过程中产生的静电电荷的量。因此，静电电荷不会损坏基板上的电子器件。

2. 发明申请

US20080099853A1 THIN FILM TRANSISTOR AND FABRICATION METHOD THEREOF 审中-公开
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20080099853A1
公开(公告)日：2008-05-01
申请号：US11735441
申请日：2007-04-14
申请人： Chi-Jan Yang , Hsiy-Yu Chang , Yu-Chou Lee , Ying-Ming Wu
发明人： Chi-Jan Yang , Hsiy-Yu Chang , Yu-Chou Lee , Ying-Ming Wu
IPC分类号： H01L29/76 , H01L21/00
CPC分类号： H01L29/458 , H01L29/4908 , H01L29/66765
摘要： A thin film transistor including a substrate, a first buffer layer, a gate, a gate insulation layer, a channel layer, a source and a drain is provided. The first buffer layer is disposed on the substrate and the first buffer is a silicide. The gate covers a portion of the first buffer layer, and the gate includes a first aluminum metal layer and a first protective layer disposed thereon. The gate insulation layer covers the gate, and the channel layer is disposed on part of the gate insulation layer. The source and the drain are disposed on the channel layer and separated form each other. Each of the source and the drain includes a second buffer layer, a second aluminum metal layer and a second protective layer. The second aluminum metal layer is disposed on the second buffer layer and the second protective layer is disposed thereon.
摘要翻译：提供了包括衬底，第一缓冲层，栅极，栅极绝缘层，沟道层，源极和漏极的薄膜晶体管。第一缓冲层设置在基板上，第一缓冲层是硅化物。栅极覆盖第一缓冲层的一部分，栅极包括第一铝金属层和设置在其上的第一保护层。栅极绝缘层覆盖栅极，并且沟道层设置在栅极绝缘层的一部分上。源极和漏极设置在沟道层上并彼此分离。源极和漏极中的每一个包括第二缓冲层，第二铝金属层和第二保护层。第二铝金属层设置在第二缓冲层上，第二保护层设置在其上。

3. 发明申请

US20080061327A1 Semiconductor device and its manufacturing method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080061327A1
公开(公告)日：2008-03-13
申请号：US11979667
申请日：2007-11-07
申请人： Ching-Yeh Kuo , Tsung-Chi Cheng , Yu-Chou Lee , Yea-Chung Shih , Wen-Kuang Tsao , Hsiang-Hsien Chung , Hung-Yi Hsu , Jui-Chung Chang
发明人： Ching-Yeh Kuo , Tsung-Chi Cheng , Yu-Chou Lee , Yea-Chung Shih , Wen-Kuang Tsao , Hsiang-Hsien Chung , Hung-Yi Hsu , Jui-Chung Chang
IPC分类号： H01L29/94
CPC分类号： H01L29/66742 , H01L29/458 , H01L29/4908 , H01L29/786
摘要： A semiconductor device and its manufacturing method are disclosed. The nitrogen flow is gradually changed to form a semiconductor device with a gate or a source/drain having a nitrified gradient layer structure. Different extents of nitrification inside the nitrified gradient layer structure provide protection and buffering to prevent the undercut after etching due to different materials in the multilayer structure or the interface effect.
摘要翻译：公开了一种半导体器件及其制造方法。氮气流逐渐变化以形成具有硝化梯度层结构的栅极或源极/漏极的半导体器件。硝化梯度层结构内的不同硝化程度提供保护和缓冲，以防止由于多层结构中的不同材料或界面效应而导致的蚀刻后的底切。

4. 发明申请

US20060197089A1 Semiconductor device and its manufacturing method 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20060197089A1
公开(公告)日：2006-09-07
申请号：US11070216
申请日：2005-03-03
申请人： Ching-Yeh Kuo , Tsung-Chi Cheng , Yu-Chou Lee , Yea-Chung Shih , Wen-Kuang Tsao , Hsiang-Hsien Chung , Hung-Yi Hsu , Jui-Chung Chang
发明人： Ching-Yeh Kuo , Tsung-Chi Cheng , Yu-Chou Lee , Yea-Chung Shih , Wen-Kuang Tsao , Hsiang-Hsien Chung , Hung-Yi Hsu , Jui-Chung Chang
IPC分类号： H01L29/786 , H01L21/84
CPC分类号： H01L29/66742 , H01L29/458 , H01L29/4908 , H01L29/786
摘要： A semiconductor device and its manufacturing method are disclosed. The nitrogen flow is gradually changed to form a semiconductor device with a gate or a source/drain having a nitrified gradient layer structure. Different extents of nitrification inside the nitrified gradient layer structure provide protection and buffering to prevent the undercut after etching due to different materials in the multilayer structure or the interface effect.
摘要翻译：公开了一种半导体器件及其制造方法。氮气流逐渐变化以形成具有硝化梯度层结构的栅极或源极/漏极的半导体器件。硝化梯度层结构内的不同硝化程度提供保护和缓冲，以防止由于多层结构中的不同材料或界面效应而导致的蚀刻后的底切。

5. 发明申请

US20050164592A1 Manufacturing method and structure of copper lines for a liquid crystal panel 审中-公开
公开(公告)号：US20050164592A1
公开(公告)日：2005-07-28
申请号：US11085907
申请日：2005-03-21
申请人： Yu-Chou Lee
发明人： Yu-Chou Lee
IPC分类号： G02F1/1362 , H01L21/768 , H01J9/00 , H01J9/02 , H01J9/24
CPC分类号： H01L21/76877 , G02F1/136286
摘要： In those conventional arts, for large-size LCD, the process of copper damascene interconnect has some problems of forming a uneven copper seed layer and forming hollows during electrical plating due to the electrical plating area being too large to electroplate uniformly. In this invention, it employs a Cu tape to directly stick on a substrate to replace forming a copper seed layer and electroplating. Hence, the invention avoids the problem of unevenness and hollows in those conventional arts and so the Cu lines can be applied to the large-size LCD.

6. 发明申请

US20060238647A1 VIDEO DATA PROCESSING METHOD AND DEVICE FOR AMPLIFIED DYNAMIC VIDEOS 审中-公开
标题翻译：视频数据处理方法和放大动态视频的设备
公开(公告)号：US20060238647A1
公开(公告)日：2006-10-26
申请号：US10908045
申请日：2005-04-26
申请人： Yu-Chou Lee
发明人： Yu-Chou Lee
IPC分类号： H04N9/12 , G09G5/00
CPC分类号： H04N5/148
摘要： A video data accessing method and device which perform loading actions and saving actions respectively in two stages, wherein the loading or saving actions depend on whether the received video signal contains valid data. When the received data is valid, only the saving action is performed to a register at each clock cycle, at the same time the register will not be read.
摘要翻译：一种视频数据存取方法和装置，分别执行两个阶段的加载动作和保存操作，其中加载或保存动作取决于接收到的视频信号是否包含有效数据。当接收到的数据有效时，在每个时钟周期只对存储器执行保存操作，同时不会读取寄存器。

7. 发明申请

US20050006645A1 [THIN FILM TRANSISTOR AND FABRICATING METHOD THEREOF] 有权
标题翻译： [薄膜晶体管及其制造方法]
公开(公告)号：US20050006645A1
公开(公告)日：2005-01-13
申请号：US10605403
申请日：2003-09-29
申请人： Yu-Chou Lee , Wen-Kuang Tsao
发明人： Yu-Chou Lee , Wen-Kuang Tsao
IPC分类号： H01L21/336 , H01L29/49 , H01L29/786 , H01L29/04 , H01L31/036
CPC分类号： H01L29/66765 , H01L29/4908 , H01L29/78669
摘要： A method for fabricating a thin film transistor (TFT) is described. A MoNb gate is formed on a substrate, and an insulating layer is formed on the substrate covering the gate. A channel layer is formed on the insulating layer above the gate, and a source/drain is formed on the channel layer to constitute a TFT. Since the gate is constituted of a MoNb layer, the contact resistance thereof can be reduced.
摘要翻译：对薄膜晶体管（TFT）的制造方法进行说明。在基板上形成MoNb栅极，在覆盖栅极的基板上形成绝缘层。在栅极上方的绝缘层上形成沟道层，在沟道层上形成源极/漏极，构成TFT。由于栅极由MoNb层构成，所以可以降低其接触电阻。

8. 发明授权

US06841431B2 Method for reducing the contact resistance 失效
标题翻译：降低接触电阻的方法
公开(公告)号：US06841431B2
公开(公告)日：2005-01-11
申请号：US10352937
申请日：2003-01-29
申请人： Yu-Chou Lee , Min-Ching Hsu
发明人： Yu-Chou Lee , Min-Ching Hsu
IPC分类号： H01L21/00 , H01L21/302 , H01L21/336 , H01L21/461 , H01L21/84 , H01L29/417 , H01L29/45
CPC分类号： H01L29/66765 , H01L29/41733 , H01L29/458
摘要： A method for reducing the contact resistance using plasma process tries to solve the problem that the cleaning process could not remove both the residues and oxides on the etched surface effectively. A plasma treating process is performed after the cleaning process and before any following process. Herein, the plasma treating process uses the plasma(s) to physically and/or chemically react with the etched surface. For example, inert gas plasma is used to remove these residues and the oxides, and then hydrogen plasma is used to compensate the unsaturated bonds by inducing the ions bombardment of the inert gas plasma.
摘要翻译：使用等离子体处理降低接触电阻的方法试图解决清洗过程不能有效去除蚀刻表面上的残留物和氧化物的问题。在清洁过程之后和在任何后续处理之前执行等离子体处理过程。这里，等离子体处理方法使用等离子体物理和/或化学地与蚀刻的表面反应。例如，使用惰性气体等离子体去除这些残留物和氧化物，然后通过诱导惰性气体等离子体的离子轰击来使用氢等离子体来补偿不饱和键。

9. 发明授权

US07855383B2 Semiconductor device and its manufacturing method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US07855383B2
公开(公告)日：2010-12-21
申请号：US11979667
申请日：2007-11-07
申请人： Ching-Yeh Kuo , Tsung-Chi Cheng , Yu-Chou Lee , Yea-Chung Shih , Wen-Kuang Tsao , Hsiang-Hsien Chung , Hung-Yi Hsu , Jui-Chung Chang
发明人： Ching-Yeh Kuo , Tsung-Chi Cheng , Yu-Chou Lee , Yea-Chung Shih , Wen-Kuang Tsao , Hsiang-Hsien Chung , Hung-Yi Hsu , Jui-Chung Chang
IPC分类号： H01L29/786
CPC分类号： H01L29/66742 , H01L29/458 , H01L29/4908 , H01L29/786
摘要： A semiconductor device and its manufacturing method are disclosed. The nitrogen flow is gradually changed to form a semiconductor device with a gate or a source/drain having a nitrified gradient layer structure. Different extents of nitrification inside the nitrified gradient layer structure provide protection and buffering to prevent the undercut after etching due to different materials in the multilayer structure or the interface effect.
摘要翻译：公开了一种半导体器件及其制造方法。氮气流逐渐变化以形成具有硝化梯度层结构的栅极或源极/漏极的半导体器件。硝化梯度层结构内的不同硝化程度提供保护和缓冲，以防止由于多层结构中的不同材料或界面效应而导致的蚀刻后的底切。

10. 发明申请

US20070187681A1 THIN FILM TRANSISTOR 审中-公开
标题翻译：薄膜晶体管
公开(公告)号：US20070187681A1
公开(公告)日：2007-08-16
申请号：US11740296
申请日：2007-04-26
申请人： Chiun-Hung Chen , Yu-Chou Lee
发明人： Chiun-Hung Chen , Yu-Chou Lee
IPC分类号： H01L29/04
CPC分类号： H01L27/124 , H01L29/66765
摘要： A thin film transistor and method of fabrication a thin film transistor and a pixel structure are provided. First, a gate is formed on the substrate. Then, a gate-isolating layer is formed on the substrate to cover the gate electrode. After that, a source/drain is formed on the gate-isolating layer and exposes a portion of the gate-isolating layer above the gate electrode. Then, a channel is formed on the portion of the gate-isolating layer above the gate. The source/drain layer is formed before forming the channel to prevent the channel from over etching as forming the source/drain layer. Therefore, the yields of manufacturing thin film transistor and pixel structure can be improved.
摘要翻译：提供薄膜晶体管和制造薄膜晶体管和像素结构的方法。首先，在基板上形成栅极。然后，在衬底上形成栅极隔离层以覆盖栅电极。之后，在栅极隔离层上形成源极/漏极，并将栅极隔离层的一部分暴露在栅极电极上方。然后，在栅极上方的栅极隔离层的部分上形成沟道。在形成沟道之前形成源极/漏极层，以防止沟道过蚀刻形成源极/漏极层。因此，可以提高制造薄膜晶体管和像素结构的产率。

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