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1. 发明授权

US06841431B2 Method for reducing the contact resistance 失效
标题翻译：降低接触电阻的方法
公开(公告)号：US06841431B2
公开(公告)日：2005-01-11
申请号：US10352937
申请日：2003-01-29
申请人： Yu-Chou Lee , Min-Ching Hsu
发明人： Yu-Chou Lee , Min-Ching Hsu
IPC分类号： H01L21/00 , H01L21/302 , H01L21/336 , H01L21/461 , H01L21/84 , H01L29/417 , H01L29/45
CPC分类号： H01L29/66765 , H01L29/41733 , H01L29/458
摘要： A method for reducing the contact resistance using plasma process tries to solve the problem that the cleaning process could not remove both the residues and oxides on the etched surface effectively. A plasma treating process is performed after the cleaning process and before any following process. Herein, the plasma treating process uses the plasma(s) to physically and/or chemically react with the etched surface. For example, inert gas plasma is used to remove these residues and the oxides, and then hydrogen plasma is used to compensate the unsaturated bonds by inducing the ions bombardment of the inert gas plasma.
摘要翻译：使用等离子体处理降低接触电阻的方法试图解决清洗过程不能有效去除蚀刻表面上的残留物和氧化物的问题。在清洁过程之后和在任何后续处理之前执行等离子体处理过程。这里，等离子体处理方法使用等离子体物理和/或化学地与蚀刻的表面反应。例如，使用惰性气体等离子体去除这些残留物和氧化物，然后通过诱导惰性气体等离子体的离子轰击来使用氢等离子体来补偿不饱和键。

2. 再颁专利

USRE44531E1 Manufacturing process of thin film transistor 有权
标题翻译：薄膜晶体管的制造工艺
公开(公告)号：USRE44531E1
公开(公告)日：2013-10-08
申请号：US13403800
申请日：2012-02-23
申请人： Min-Ching Hsu , Yung-Lung Mo
发明人： Min-Ching Hsu , Yung-Lung Mo
IPC分类号： H01L21/84
CPC分类号： H01L29/78618 , H01L29/66765
摘要： A thin film transistor includes a gate, a gate insulator layer, a channel layer, a source, a drain, and an ohmic contact layer. The gate insulator layer covers the gate; the channel layer is disposed on the gate insulator layer above the gate; the source and the drain are disposed on the channel layer; the ohmic contact layer is disposed between the channel layer and the source and drain. The ohmic contact layer is constituted by a number of film layers. As mentioned above, the thin film transistor has an ohmic contact layer constituted by a number of film layers. When the thin film transistor is turned off, the current leakage thereof is lowered than that of a conventional thin film transistor.
摘要翻译：薄膜晶体管包括栅极，栅极绝缘体层，沟道层，源极，漏极和欧姆接触层。栅极绝缘体层覆盖栅极; 沟道层设置在栅极上方的栅极绝缘体层上; 源极和漏极设置在沟道层上; 欧姆接触层设置在沟道层和源极和漏极之间。欧姆接触层由多个膜层构成。如上所述，薄膜晶体管具有由多个膜层构成的欧姆接触层。当薄膜晶体管截止时，其电流泄漏比传统的薄膜晶体管低。

3. 发明授权

US07666725B2 Manufacturing process of thin film transistor 有权
标题翻译：薄膜晶体管的制造工艺
公开(公告)号：US07666725B2
公开(公告)日：2010-02-23
申请号：US12338511
申请日：2008-12-18
申请人： Min-Ching Hsu , Yung-Lung Mo
发明人： Min-Ching Hsu , Yung-Lung Mo
IPC分类号： H01L21/84
CPC分类号： H01L29/78618 , H01L29/66765
摘要： A thin film transistor includes a gate, a gate insulator layer, a channel layer, a source, a drain, and an ohmic contact layer. The gate insulator layer covers the gate; the channel layer is disposed on the gate insulator layer above the gate; the source and the drain are disposed on the channel layer; the ohmic contact layer is disposed between the channel layer and the source and drain. The ohmic contact layer is constituted by a number of film layers. As mentioned above, the thin film transistor has an ohmic contact layer constituted by a number of film layers. When the thin film transistor is turned off, the current leakage thereof is lowered than that of a conventional thin film transistor.
摘要翻译：薄膜晶体管包括栅极，栅极绝缘体层，沟道层，源极，漏极和欧姆接触层。栅极绝缘体层覆盖栅极; 沟道层设置在栅极上方的栅极绝缘体层上; 源极和漏极设置在沟道层上; 欧姆接触层设置在沟道层和源极和漏极之间。欧姆接触层由多个膜层构成。如上所述，薄膜晶体管具有由多个膜层构成的欧姆接触层。当薄膜晶体管截止时，其电流泄漏比传统的薄膜晶体管低。

4. 发明申请

US20090098691A1 MANUFACTURING PROCESS OF THIN FILM TRANSISTOR 有权
标题翻译：薄膜晶体管的制造工艺
公开(公告)号：US20090098691A1
公开(公告)日：2009-04-16
申请号：US12338511
申请日：2008-12-18
申请人： Min-Ching Hsu , Yung-Lung Mo
发明人： Min-Ching Hsu , Yung-Lung Mo
IPC分类号： H01L21/336
CPC分类号： H01L29/78618 , H01L29/66765
摘要： A thin film transistor includes a gate, a gate insulator layer, a channel layer, a source, a drain, and an ohmic contact layer. The gate insulator layer covers the gate; the channel layer is disposed on the gate insulator layer above the gate; the source and the drain are disposed on the channel layer; the ohmic contact layer is disposed between the channel layer and the source and drain. The ohmic contact layer is constituted by a number of film layers. As mentioned above, the thin film transistor has an ohmic contact layer constituted by a number of film layers. When the thin film transistor is turned off, the current leakage thereof is lowered than that of a conventional thin film transistor.
摘要翻译：薄膜晶体管包括栅极，栅极绝缘体层，沟道层，源极，漏极和欧姆接触层。栅极绝缘体层覆盖栅极; 沟道层设置在栅极上方的栅极绝缘体层上; 源极和漏极设置在沟道层上; 欧姆接触层设置在沟道层和源极和漏极之间。欧姆接触层由多个膜层构成。如上所述，薄膜晶体管具有由多个膜层构成的欧姆接触层。当薄膜晶体管截止时，其电流泄漏比传统的薄膜晶体管低。

5. 发明申请

US20070054441A1 Thin film transistor and manufacturing process thereof 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20070054441A1
公开(公告)日：2007-03-08
申请号：US11223161
申请日：2005-09-08
申请人： Min-Ching Hsu , Yung-lung Mo
发明人： Min-Ching Hsu , Yung-lung Mo
IPC分类号： H01L21/84
CPC分类号： H01L29/78618 , H01L29/66765
摘要： A thin film transistor including a gate, a gate insulator layer, a channel layer, a source, a drain, and an ohmic contact layer is provided. The gate insulator layer covers the gate; the channel layer is disposed on the gate insulator layer above the gate; the source and the drain are disposed on the channel layer; the ohmic contact layer is disposed between the channel layer and the source and drain. The ohmic contact layer is constituted of a plurality of film layers. As mentioned above, the thin film transistor has an ohmic contact layer constituted by a plurality of film layers. When the thin film transistor is turned off, the current leakage thereof is lowered than that of conventional thin film transistor.
摘要翻译：提供了包括栅极，栅极绝缘体层，沟道层，源极，漏极和欧姆接触层的薄膜晶体管。栅极绝缘体层覆盖栅极; 沟道层设置在栅极上方的栅极绝缘体层上; 源极和漏极设置在沟道层上; 欧姆接触层设置在沟道层和源极和漏极之间。欧姆接触层由多个膜层构成。如上所述，薄膜晶体管具有由多个膜层构成的欧姆接触层。当薄膜晶体管截止时，其电流泄漏比传统的薄膜晶体管低。

6. 发明授权

US07508036B2 Thin film transistor and manufacturing process thereof 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US07508036B2
公开(公告)日：2009-03-24
申请号：US11223161
申请日：2005-09-08
申请人： Min-Ching Hsu , Mo Yung-lung
发明人： Min-Ching Hsu , Mo Yung-lung
IPC分类号： H01L21/84
CPC分类号： H01L29/78618 , H01L29/66765
摘要： A thin film transistor including a gate, a gate insulator layer, a channel layer, a source, a drain, and an ohmic contact layer is provided. The gate insulator layer covers the gate; the channel layer is disposed on the gate insulator layer above the gate; the source and the drain are disposed on the channel layer; the ohmic contact layer is disposed between the channel layer and the source and drain. The ohmic contact layer is constituted of a plurality of film layers. As mentioned above, the thin film transistor has an ohmic contact layer constituted by a plurality of film layers. When the thin film transistor is turned off, the current leakage thereof is lowered than that of conventional thin film transistor.
摘要翻译：提供了包括栅极，栅极绝缘体层，沟道层，源极，漏极和欧姆接触层的薄膜晶体管。栅极绝缘体层覆盖栅极; 沟道层设置在栅极上方的栅极绝缘体层上; 源极和漏极设置在沟道层上; 欧姆接触层设置在沟道层和源极和漏极之间。欧姆接触层由多个膜层构成。如上所述，薄膜晶体管具有由多个膜层构成的欧姆接触层。当薄膜晶体管截止时，其电流泄漏比传统的薄膜晶体管低。

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