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1. 发明申请

US20200292149A1 LIGHT EXTRACTION BRIDGE IN CUPS 审中-公开
公开(公告)号：US20200292149A1
公开(公告)日：2020-09-17
申请号：US16815706
申请日：2020-03-11
申请人： Yu-Chen Shen , Oleg B. Shchekin
发明人： Yu-Chen Shen , Oleg B. Shchekin
IPC分类号： F21V7/06 , F21V7/28 , F21V7/24 , F21V7/09
摘要： A light emitting device may comprise a cup having a wall extending from a first area of the cup to a second area of the cup. The wall is formed from or coated with a reflective material. The light emitting device may comprise a light extraction bridge extending beyond an outer diameter of at least a portion of the wall for directing light into the air. The light may be produced by an LED die mounted at the second area of the cup such that at least some of a light emitted from the LED die exits the cup, having been reflected from the wall and the light extraction bridge.

2. 发明申请

US20160177439A1 SPUTTER TOOL 审中-公开
标题翻译：飞溅工具
公开(公告)号：US20160177439A1
公开(公告)日：2016-06-23
申请号：US14578332
申请日：2014-12-19
申请人： Yu-Chen Shen , Taiqing Qiu , Robe Woehl , Kieran Mark Tracy , Mukul Agrawal
发明人： Yu-Chen Shen , Taiqing Qiu , Robe Woehl , Kieran Mark Tracy , Mukul Agrawal
IPC分类号： C23C14/50 , C23C14/34
CPC分类号： C23C14/50 , C23C14/165 , C23C14/34 , C23C14/3464 , H01J37/32715
摘要： Sputter tools are described. In one embodiment, an apparatus to support a wafer includes a pallet having a depression to receive the wafer. The pallet includes an opening below the depression, and an edge in the depression is to support the wafer over the opening. A cover at least partially covers the opening. In one example, the cover may be a plate with one or more holes, and a pipe may be located below each of the holes in the cover. In one embodiment, a wafer-processing system includes a processing chamber and a pallet with a depression to receive a wafer. The pallet has an opening below the depression, and an edge in the depression supports the wafer over the opening. In one such embodiment, a cover at least partially covers the opening. According to one embodiment, an energy-absorbing material is disposed below the opening in the pallet.
摘要翻译：描述了溅射工具。在一个实施例中，用于支撑晶片的装置包括具有用于接收晶片的凹陷的托盘。托盘包括在凹陷下方的开口，并且凹陷中的边缘将晶片支撑在开口上。盖子至少部分地覆盖开口。在一个示例中，盖可以是具有一个或多个孔的板，并且管可以位于盖中的每个孔下方。在一个实施例中，晶片处理系统包括处理室和具有凹陷的托盘以接收晶片。托盘在凹陷下方具有开口，并且凹陷中的边缘将晶片支撑在开口上方。在一个这样的实施例中，盖至少部分地覆盖开口。根据一个实施例，能量吸收材料设置在托盘中的开口下方。

3. 发明授权

US09054255B2 Solar cell having an emitter region with wide bandgap semiconductor material 有权
标题翻译：太阳能电池具有宽带隙半导体材料的发射极区域
公开(公告)号：US09054255B2
公开(公告)日：2015-06-09
申请号：US13429138
申请日：2012-03-23
申请人： Richard M. Swanson , Marius M. Bunea , Michael C. Johnson , David D. Smith , Yu-Chen Shen , Peter J. Cousins , Tim Dennis
发明人： Richard M. Swanson , Marius M. Bunea , Michael C. Johnson , David D. Smith , Yu-Chen Shen , Peter J. Cousins , Tim Dennis
IPC分类号： H01L21/00 , H01L31/0747 , H01L31/068 , H01L31/072 , H01L31/0745
CPC分类号： H01L31/0747 , H01L31/02167 , H01L31/022441 , H01L31/02363 , H01L31/068 , H01L31/0682 , H01L31/072 , H01L31/0745 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.
摘要翻译：描述具有由宽带隙半导体材料构成的发射极区域的太阳能电池。在一个示例中，一种方法包括在具有受控气氛的处理工具中形成在太阳能电池的半导体衬底的表面上的薄介电层。半导体衬底具有带隙。在不从处理工具的受控气氛中移除半导体衬底的情况下，在薄介电层上形成半导体层。半导体层具有比半导体衬底的带隙高至少约0.2电子伏特（eV）的带隙。

4. 发明申请

US20130223493A1 SIGNAL TRANSITION DETECTION CIRCUIT AND METHOD OF THE SAME 有权
标题翻译：信号转换检测电路及其方法
公开(公告)号：US20130223493A1
公开(公告)日：2013-08-29
申请号：US13454352
申请日：2012-04-24
申请人： Yu-Chen Shen , Kuei-Chang Yang
发明人： Yu-Chen Shen , Kuei-Chang Yang
IPC分类号： H04B17/00
CPC分类号： H04L1/24
摘要： A signal transition detection circuit is provided. The signal transition detection circuit comprises a counter module, a DAC, a comparator and a digital sampling module. The counter module generates a digital step signal. The DAC converts the digital step signal into an analog input signal and transmits it to an under-test circuit such that the under-test circuit generates an output signal transiting from a first stable level to a second stable level, wherein a transition section is located between the first and the second stable level. The comparator receives and compares the output signal with a default value to generate a normalized output signal. The digital sampling module samples the normalized output signal to retrieve impulses such that when the number of the impulses is accumulated to be larger than a reference value, a corresponding step of the digital step signal is determined to be a transition point.
摘要翻译：提供了一种信号转换检测电路。信号转换检测电路包括计数器模块，DAC，比较器和数字采样模块。计数器模块产生数字步进信号。 DAC将数字步进信号转换为模拟输入信号并将其发送到未被测试的电路，使得欠测试电路产生从第一稳定电平转移到第二稳定电平的输出信号，其中过渡部分位于在第一和第二稳定水平之间。比较器接收并比较输出信号与默认值，以产生归一化的输出信号。数字采样模块对归一化的输出信号进行采样以取回脉冲，使得当脉冲数被累积到大于参考值时，数字步进信号的相应步骤被确定为转变点。

5. 发明授权

US07861026B2 Signal relay device and method for accessing an external memory via the signal relay device 有权
标题翻译：用于通过信号中继装置访问外部存储器的信号中继装置和方法
公开(公告)号：US07861026B2
公开(公告)日：2010-12-28
申请号：US12417646
申请日：2009-04-03
申请人： Yu-Chen Shen , Yi-Shin Li , Ming-Chung Hsu
发明人： Yu-Chen Shen , Yi-Shin Li , Ming-Chung Hsu
IPC分类号： G06F13/36
CPC分类号： G06F13/28
摘要： A signal relay device for accessing an external memory is provided. The signal relay device includes a bus arbiter and a burst access engine. The bus arbiter performs bus arbitration among main masters on a bus. The burst access engine exchanges signals with the bus arbiter and an external memory controller. The signal relay device facilitates data transfer of large groups of read/write commands between the main masters and the external memory controller.
摘要翻译：提供了用于访问外部存储器的信号中继装置。信号中继装置包括总线仲裁器和突发存取引擎。总线仲裁员在公共汽车上的主要主人之间执行总线仲裁。突发访问引擎与总线仲裁器和外部存储器控制器交换信号。信号中继装置便于在主主机和外部存储器控制器之间传送大量读/写命令组。

6. 发明申请

US20090261361A1 III-NITRIDE LIGHT EMITTING DEVICE WITH DOUBLE HETEROSTRUCTURE LIGHT EMMITTING REGION 有权
标题翻译：具有双重结构光照射区域的III型氮化物发光装置
公开(公告)号：US20090261361A1
公开(公告)日：2009-10-22
申请号：US12495464
申请日：2009-06-30
申请人： Yu-Chen Shen , Nathan F. Gardner , Satoshi Watanabe , Michael R. Krames , Gerd O. Mueller
发明人： Yu-Chen Shen , Nathan F. Gardner , Satoshi Watanabe , Michael R. Krames , Gerd O. Mueller
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/02 , H01L33/025 , H01L33/06 , H01L33/325
摘要： A III-nitride light emitting layer is disposed between an n-type region and a p-type region in a double heterostructure. At least a portion of the III-nitride light emitting layer has a graded composition.
摘要翻译： III族氮化物发光层设置在双异质结构中的n型区域和p型区域之间。 III族氮化物发光层的至少一部分具有渐变组成。

7. 发明授权

US06900474B2 Light emitting devices with compact active regions 有权
公开(公告)号：US06900474B2
公开(公告)日：2005-05-31
申请号：US10632720
申请日：2003-07-31
申请人： Mira S. Misra , Yu-Chen Shen , Stephen A. Stockman
发明人： Mira S. Misra , Yu-Chen Shen , Stephen A. Stockman
IPC分类号： H01L33/10 , H01L33/20 , H01L33/40 , H01L51/52 , H01L33/00
CPC分类号： H01L33/10 , H01L33/20 , H01L33/405 , H01L51/5265
摘要： A light emitting device includes a region of first conductivity type, a region of second conductivity type, an active region, and an electrode. The active region is disposed between the region of first conductivity type and the region of second conductivity type and the region of second conductivity type is disposed between the active region and the electrode. The active region has a total thickness less than or equal to about 0.25λn and has a portion located between about 0.6λn and 0.75λn from the electrode, where λn is the wavelength of light emitted by the active region in the region of second conductivity type. In some embodiments, the active region includes a plurality of clusters, with a portion of a first cluster located between about 0.6λn and 0.75λn from the electrode and a portion of a second cluster located between about 1.2λn and 1.35λn from the electrode.

8. 发明申请

US20170149383A1 PHOTONIC DEGRADATION MONITORING FOR SEMICONDUCTOR DEVICES 审中-公开
公开(公告)号：US20170149383A1
公开(公告)日：2017-05-25
申请号：US15425709
申请日：2017-02-06
申请人： Xiuwen Tu , David Aitan Soltz , Michael C. Johnson , Seung Bum Rim , Taiqing Qiu , Yu-Chen Shen , Kieran Mark Tracy
发明人： Xiuwen Tu , David Aitan Soltz , Michael C. Johnson , Seung Bum Rim , Taiqing Qiu , Yu-Chen Shen , Kieran Mark Tracy
IPC分类号： H02S50/15 , G01N21/64
CPC分类号： H02S50/15 , G01N21/6408 , G01N21/6489 , G01N2201/06113 , G01N2201/0621
摘要： Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.

9. 发明申请

US20150243803A1 SOLAR CELL HAVING AN EMITTER REGION WITH WIDE BANDGAP SEMICONDUCTOR MATERIAL 审中-公开
标题翻译：具有宽带束半导体材料的发射极区域的太阳能电池
公开(公告)号：US20150243803A1
公开(公告)日：2015-08-27
申请号：US14706773
申请日：2015-05-07
申请人： Richard M. Swanson , Marius M. Bunea , Michael C. Johnson , David D. Smith , Yu-Chen Shen , Peter J. Cousins , Tim Dennis
发明人： Richard M. Swanson , Marius M. Bunea , Michael C. Johnson , David D. Smith , Yu-Chen Shen , Peter J. Cousins , Tim Dennis
IPC分类号： H01L31/0216 , H01L31/18 , H01L31/068
CPC分类号： H01L31/0747 , H01L31/02167 , H01L31/022441 , H01L31/02363 , H01L31/068 , H01L31/0682 , H01L31/072 , H01L31/0745 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.
摘要翻译：描述具有由宽带隙半导体材料构成的发射极区域的太阳能电池。在一个示例中，一种方法包括在具有受控气氛的处理工具中形成在太阳能电池的半导体衬底的表面上的薄介电层。半导体衬底具有带隙。在不从处理工具的受控气氛中移除半导体衬底的情况下，在薄介电层上形成半导体层。半导体层具有比半导体衬底的带隙高至少约0.2电子伏特（eV）的带隙。

10. 发明授权

US07719018B2 Light emitting devices with compact active regions 有权
标题翻译：具有紧凑有源区域的发光器件
公开(公告)号：US07719018B2
公开(公告)日：2010-05-18
申请号：US11139325
申请日：2005-05-27
申请人： Mira S. Misra , Yu-Chen Shen , Stephen A. Stockman
发明人： Mira S. Misra , Yu-Chen Shen , Stephen A. Stockman
IPC分类号： H01L33/00
CPC分类号： H01L33/10 , H01L33/20 , H01L33/405 , H01L51/5265
摘要： A light emitting device includes a region of first conductivity type, a region of second conductivity type, an active region, and an electrode. The active region is disposed between the region of first conductivity type and the region of second conductivity type and the region of second conductivity type is disposed between the active region and the electrode. The active region has a total thickness less than or equal to about 0.25λn and has a portion located between about 0.6λn and 0.75λn from the electrode, where λn is the wavelength of light emitted by the active region in the region of second conductivity type. In some embodiments, the active region includes a plurality of clusters, with a portion of a first cluster located between about 0.6λn and 0.75λn from the electrode and a portion of a second cluster located between about 1.2λn and 1.35λn from the electrode.
摘要翻译：发光器件包括第一导电类型的区域，第二导电类型的区域，有源区域和电极。有源区域设置在第一导电类型的区域和第二导电类型的区域之间，并且第二导电类型的区域设置在有源区域和电极之间。有源区具有小于或等于约0.25λn的总厚度，并且具有距离电极约0.6λn至0.75λn的部分，其中λn是由第二导电类型区域中的有源区发射的光的波长。在一些实施例中，有源区域包括多个簇，其中第一簇的一部分位于距离电极约0.6λn和0.75λn之间，第二簇的一部分位于离电极约1.2λn和1.35λn之间。

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