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1. 发明申请

US20110018016A1 REDUCED COLOR OVER ANGLE VARIATION LEDS 有权
标题翻译：减少颜色超过角度变化的LED
公开(公告)号：US20110018016A1
公开(公告)日：2011-01-27
申请号：US12507493
申请日：2009-07-22
申请人： Serge J. BIERHUIZEN , Oleg B. SHCHEKIN
发明人： Serge J. BIERHUIZEN , Oleg B. SHCHEKIN
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/508 , H01L33/58 , H01L2924/0002 , H01L2933/0041 , H01L2933/0058 , H01L2924/00
摘要： A light emitting diode (LED) package includes an LED die includes a stack of semiconductor layers including an active region, and a wavelength converting element over the LED die. The wavelength converting element includes two or more non-flat surfaces that produce a desired angular color distribution pattern.
摘要翻译：发光二极管（LED）封装包括LED管芯，其包括包括有源区的半导体层堆叠以及在LED管芯上的波长转换元件。波长转换元件包括产生期望的角色分布图案的两个或多个非平坦表面。

2. 发明授权

US10147843B2 Semiconductor light emitting device including a window layer and a light-directing structure 有权
公开(公告)号：US10147843B2
公开(公告)日：2018-12-04
申请号：US12178902
申请日：2008-07-24
申请人： John Epler , James G. Neff , Oleg B. Shchekin
发明人： John Epler , James G. Neff , Oleg B. Shchekin
IPC分类号： H01L33/00 , H01L33/16 , H01L33/10 , H01L33/22 , H01L33/38 , H01L33/50 , H01L33/58
摘要： A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure is disposed between a window layer and a light-directing structure. The light-directing structure is configured to direct light toward the window layer; examples of suitable light-directing structures include a porous semiconductor layer and a photonic crystal. An n-contact is electrically connected to the n-type region and a p-contact is electrically connected to the p-type region. The p-contact is disposed in an opening formed in the semiconductor structure.

3. 发明申请

US20090046479A1 Thin Backlight Using Low Profile Side Emitting LED 审中-公开
标题翻译：使用薄型侧面发光LED的薄背光
公开(公告)号：US20090046479A1
公开(公告)日：2009-02-19
申请号：US11840130
申请日：2007-08-16
申请人： Serge J. Bierhuizen , Gerard Harbers , Oleg B. Shchekin , Gregory W. Eng
发明人： Serge J. Bierhuizen , Gerard Harbers , Oleg B. Shchekin , Gregory W. Eng
IPC分类号： F21V7/04 , G02B6/10
CPC分类号： G02B6/0021 , G02B6/0016 , G02B6/0073
摘要： Low profile, side-emitting LEDs are described. The LEDs are used in very thin backlights for backlighting an LCD. In one embodiment, the backlight comprises a solid transparent waveguide with at least one opening in the waveguide containing an LED proximate to one edge. To smooth out a clover-shaped or batwing brightness profile inherently generated by a rectangular side-emitting LED within a smooth-sided rectangular opening in the waveguide, depending on the orientation of the LED, the sidewalls of the opening are made to have varying angles along the length of each sidewall to vary the refraction angle of light along the sidewall. Additionally, if a plurality of LEDs are used in the backlight, the orientations of the openings alternate to create a more uniform brightness profile in the waveguide.
摘要翻译：描述了侧面发光的LED。 LED用于非常薄的背光，用于背光LCD。在一个实施例中，背光包括固体透明波导，其中波导中的至少一个开口包含靠近一个边缘的LED。为了平滑由波导中的平滑侧矩形开口内的矩形侧面发光LED固有地产生的三叶草形状或蝙蝠翼亮度分布，取决于LED的取向，开口的侧壁被制成具有变化的角度沿着每个侧壁的长度改变沿着侧壁的光的折射角。此外，如果在背光中使用多个LED，则开口的取向交替以在波导中产生更均匀的亮度分布。

4. 发明申请

US20110062472A1 WAVELENGTH-CONVERTED SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：波长转换半导体发光器件
公开(公告)号：US20110062472A1
公开(公告)日：2011-03-17
申请号：US12561759
申请日：2009-09-17
申请人： Oleg B. SHCHEKIN
发明人： Oleg B. SHCHEKIN
IPC分类号： H01L33/00
CPC分类号： H01L33/02 , H01L33/22 , H01L33/405 , H01L33/505 , H01L2933/0083
摘要： A light emitting diode includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region, and n- and p-contacts disposed on the n- and p-type regions. The light emitting layer is configured to emit light of a first peak wavelength. A wavelength converting material is positioned in a path of light emitted by the light emitting layer. The wavelength converting material is configured to absorb light of the first peak wavelength and emit light of a second peak wavelength. The light emitting diode is configured such that a light emission pattern from the light emitting diode complements a light emission pattern from the wavelength converting material.
摘要翻译：发光二极管包括包括设置在n型区域和p型区域之间的发光层以及设置在n型区域和p型区域上的n型和p型触点的半导体结构。发光层被配置为发射第一峰值波长的光。波长转换材料位于由发光层发射的光的路径中。波长转换材料被配置为吸收第一峰值波长的光并发射第二峰值波长的光。发光二极管被配置为使得来自发光二极管的发光图案与波长转换材料补充发光图案。

5. 发明申请

US20100277950A1 REMOTE WAVELENGTH CONVERTING MATERIAL CONFIGURATION FOR LIGHTING 有权
标题翻译：远程波长转换材料配置
公开(公告)号：US20100277950A1
公开(公告)日：2010-11-04
申请号：US12432521
申请日：2009-04-29
申请人： Oleg B. SHCHEKIN , Serge J. BIERHUIZEN
发明人： Oleg B. SHCHEKIN , Serge J. BIERHUIZEN
IPC分类号： F21V7/22
CPC分类号： G02B6/0055 , G02B6/0035 , G02B6/0068 , G02B6/0073 , H01L33/60
摘要： A device includes a reflector and a wavelength converting material disposed on the reflector. A backlight is disposed between the reflector and a surface to be illuminated, such as a liquid crystal display panel. The backlight includes a light source and a waveguide. The waveguide is configured to direct a majority of light from the light source toward the reflector. At least a portion of the light is converted by the wavelength converted material, reflected by the reflector, and incident on the surface to be illuminated.
摘要翻译：一种装置包括反射器和布置在反射器上的波长转换材料。背光源配置在反射体和被照射面之间，如液晶显示面板。背光包括光源和波导。波导被配置为将来自光源的大部分光引向反射器。光的至少一部分被波长转换的材料转换，被反射体反射并入射到被照射的表面上。

6. 发明授权

US07754507B2 Method of removing the growth substrate of a semiconductor light emitting device 有权
标题翻译：去除半导体发光器件的生长衬底的方法
公开(公告)号：US07754507B2
公开(公告)日：2010-07-13
申请号：US11149679
申请日：2005-06-09
申请人： John E. Epler , Oleg B. Shchekin , Franklin J. Wall, Jr. , Jonathan J. Wierer, Jr. , Ling Zhou
发明人： John E. Epler , Oleg B. Shchekin , Franklin J. Wall, Jr. , Jonathan J. Wierer, Jr. , Ling Zhou
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L24/97 , H01L33/382 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/97 , H01L2924/00011 , H01L2924/00014 , H01L2924/12041 , H01L2924/12042 , H01L2224/81 , H01L2924/00 , H01L2224/0401
摘要： A semiconductor structure formed on a growth substrate and including a light emitting layer disposed between an n-type region and a p-type region is attached to a carrier by a connection that supports the semiconductor structure sufficiently to permit removal of the growth substrate. In some embodiments, the semiconductor structure is a flip chip device. The semiconductor structure may be attached to the carrier by, for example, a metal bond that supports almost the entire lateral extent of the semiconductor structure, or by interconnects such as solder or gold stud bumps. An underfill material which supports the semiconductor structure is introduced in any spaces between the interconnects. The underfill material may be a liquid that is cured to form a rigid structure. The growth substrate may then be removed without causing damage to the semiconductor structure.
摘要翻译：在生长衬底上形成的包括设置在n型区域和p型区域之间的发光层的半导体结构通过足以支持半导体结构以允许去除生长衬底的连接而附着到载体上。在一些实施例中，半导体结构是倒装芯片器件。半导体结构可以通过例如支撑几乎整个半导体结构的整个横向范围的金属接合，或者通过诸如焊料或金柱凸起的互连来附接到载体。支撑半导体结构的底部填充材料被引入互连之间的任何空间。底部填充材料可以是固化以形成刚性结构的液体。然后可以去除生长衬底而不会对半导体结构造成损害。

7. 发明授权

US07534025B2 Thin backlight with flipped light emitting diode 失效
标题翻译：带背光发光二极管的薄背光
公开(公告)号：US07534025B2
公开(公告)日：2009-05-19
申请号：US11467522
申请日：2006-08-25
申请人： Gerard Harbers , Oleg B. Shchekin , Serge Bierhuizen
发明人： Gerard Harbers , Oleg B. Shchekin , Serge Bierhuizen
IPC分类号： F21V7/041
CPC分类号： G02B6/0073 , G02B6/0021 , G02B6/0031 , G02B6/0083 , G02B6/0091 , G02F1/133615
摘要： One or more LEDs are mounted within an LCD without the use of any printed circuit board (PCB), thus reducing the thickness of the LCD by about the thickness of the conventional PCB. In one embodiment, the LED and submount are mounted so that the submount is opposing the liquid crystal layer side of the LCD, so that the liquid crystal layers provide the mechanical support for the submount and LED die. The LED die (mounted on the submount) may be inserted into a cavity formed in the “top” surface of the light guide, and the top surface of the light guide is abutted against the liquid crystal layers. In such a configuration, the LED light source, including all supporting components, adds no thickness to the LCD. In another embodiment, on the “bottom” surface of the LCD opposing the LED die is an electrically switchable mirror that is either reflective or transparent. In its transparent state, the LED in the LCD may be used as a flash in a cell phone camera, while the LCD may be viewed to take the picture.
摘要翻译：一个或多个LED安装在LCD中，而不使用任何印刷电路板（PCB），从而将LCD的厚度减小约传统PCB的厚度。在一个实施例中，安装LED和基座，使得底座与LCD的液晶层侧相对，使得液晶层为子安装座和LED管芯提供机械支撑。 LED模具（安装在基座上）可以插入到形成在导光体的“顶部”表面中的空腔中，并且导光体的顶表面与液晶层抵接。在这种构造中，包括所有支撑部件的LED光源不向LCD增加厚度。在另一个实施例中，在与LED管芯相对的LCD的“底部”表面上是可反射或透明的可电换镜。在其透明状态下，LCD中的LED可以用作手机相机中的闪光灯，而LCD可以被观看拍摄照片。

8. 发明授权

US06859477B2 Optoelectronic and electronic devices based on quantum dots having proximity-placed acceptor impurities, and methods therefor 失效
标题翻译：基于具有接近放置的受主杂质的量子点的光电子器件及其方法
公开(公告)号：US06859477B2
公开(公告)日：2005-02-22
申请号：US10338509
申请日：2003-01-07
申请人： Dennis G. Deppe , Oleg B. Shchekin
发明人： Dennis G. Deppe , Oleg B. Shchekin
IPC分类号： H01L29/06 , H01L29/12 , H01S20060101 , H01S1/00 , H01S5/00 , H01S5/10 , H01S5/22 , H01S5/223 , H01S5/30 , H01S5/34 , H04B10/12
CPC分类号： B82Y20/00 , B82Y10/00 , H01L29/127 , H01S5/06226 , H01S5/1039 , H01S5/22 , H01S5/2231 , H01S5/3086 , H01S5/3407 , H01S5/341 , H01S5/3412
摘要： Solid-state optoelectronic and electronic devices that use semiconductor quantum dots for manipulation of photonic or electronic properties include a semiconductor active region forming a quantum dot heterostructure having a plurality of quantum dot layers each having discrete quantum hole states and a p-type impurity layer formed proximate to at least one of the quantum dot layers to provide excess equilibrium hole charge to occupy at least some of the discrete quantum hole states to improve To and other performance characteristics of quantum dot devices.
摘要翻译：使用用于光子或电子特性的半导体量子点的固态光电子和电子器件包括形成具有多个量子点层的量子点异质结构的半导体有源区，每个量子点层具有离散的量子阱状态和形成p型杂质层靠近至少一个量子点层以提供过量的平衡空穴电荷以占据至少一些离散的量子阱状态，以改善量子点器件的To和其他性能特征。

9. 发明申请

US20200292149A1 LIGHT EXTRACTION BRIDGE IN CUPS 审中-公开
公开(公告)号：US20200292149A1
公开(公告)日：2020-09-17
申请号：US16815706
申请日：2020-03-11
申请人： Yu-Chen Shen , Oleg B. Shchekin
发明人： Yu-Chen Shen , Oleg B. Shchekin
IPC分类号： F21V7/06 , F21V7/28 , F21V7/24 , F21V7/09
摘要： A light emitting device may comprise a cup having a wall extending from a first area of the cup to a second area of the cup. The wall is formed from or coated with a reflective material. The light emitting device may comprise a light extraction bridge extending beyond an outer diameter of at least a portion of the wall for directing light into the air. The light may be produced by an LED die mounted at the second area of the cup such that at least some of a light emitted from the LED die exits the cup, having been reflected from the wall and the light extraction bridge.

10. 发明申请

US20180226543A1 SEMICONDUCTOR LIGHT EMITTING DEVICE WITH REFLECTIVE SIDE COATING 审中-公开
公开(公告)号：US20180226543A1
公开(公告)日：2018-08-09
申请号：US15750144
申请日：2016-07-13
申请人： Hisashi MASUI , Oleg B. SHCHEKIN , Ken SHIMIZU , Les KOSOWSKY , Ken DAVIS , Lumileds LLC
发明人： Hisashi MASUI , Oleg B. SHCHEKIN , Ken SHIMIZU , Lex KOSOWSKY , Ken DAVIS
IPC分类号： H01L33/46 , H01L33/00 , H01L33/20 , H01L33/50 , H01L33/48
CPC分类号： H01L33/46 , H01L33/0095 , H01L33/20 , H01L33/486 , H01L33/505 , H01L33/56 , H01L2933/0025 , H01L2933/0058
摘要： A semiconductor light emitting device (100;200;300;400,400B,400C;500;600;700) may have a reflective side coating (120;220;320;420;520;620;720) disposed on a sidewall (118;215;315;415,435;515) of a semiconductor light emitting device structure. Such a device may be fabricated by dicing a semiconductor structure to separate a semiconductor light emitting device structure and then forming a reflective side coating (120;220;320;420;520;620;720) on a sidewall (118;215;315;415,435;515) of the separated semiconductor light emitting device structure.

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