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    • 3. 发明授权
    • Radio frequency switch circuit
    • 射频开关电路
    • US08461919B2
    • 2013-06-11
    • US13016349
    • 2011-01-28
    • Yu Sin KimYoun Suk KimDong Hyun BaekSun Woo Yoon
    • Yu Sin KimYoun Suk KimDong Hyun BaekSun Woo Yoon
    • H01L25/00
    • H03K17/94H01L2924/0002H01L2924/00
    • A radio frequency (RF) switch circuit in which an RF switch and a switch controller are formed on a single CMOS substrate and floating resistors are connected to a deep N type well substrate, an N type well substrate, and a P type well substrate to thereby increase linearity with respect to input power. In the RF switch having at least one NMOS (N type Metal Oxide Semiconductor) switch changing a transmission path of an RF signal, an N type terminal formed on a first deep N type well substrate receives driving power through a floating resistor, a P type terminal formed on a first P type substrate receives body power through a floating resistor, and the two N type terminals formed on the first P type substrate receive gate power through a floating resistor, and in the switch controller having at least one NMOS switch and at least one PMOS (P type Metal Oxide Semiconductor) switch controlling changing of a path of the RF switch, an N type terminal formed on a second deep N type well substrate and an N type terminal formed on the first N type substrate receive driving power through floating resistors.
    • 将RF开关和开关控制器形成在单个CMOS基板上的浮动开关电路和浮动电阻器连接到深N型阱基板,N型阱基板和P型阱基板, 从而相对于输入功率增加线性度。 在具有改变RF信号的传输路径的至少一个NMOS(N型金属氧化物半导体)开关的RF开关中,形成在第一深N型阱基板上的N型端子通过浮动电阻器接收驱动电力,P型 形成在第一P型基板上的端子通过浮动电阻器接收主体电力,并且形成在第一P型基板上的两个N型端子通过浮动电阻器接收栅极电力,并且在具有至少一个NMOS开关的开关控制器中 控制RF开关的路径变化的至少一个PMOS(P型金属氧化物半导体)开关,形成在第二深N型阱基板上的N型端子和形成在第一N型基板上的N型端子接收驱动电力 浮动电阻
    • 4. 发明授权
    • Asymmetric power divider
    • 不对称功率分配器
    • US08344824B2
    • 2013-01-01
    • US12768432
    • 2010-04-27
    • Yu Sin KimSong Cheol HongSang Hyun BaekYoun Suk Kim
    • Yu Sin KimSong Cheol HongSang Hyun BaekYoun Suk Kim
    • H03H7/38
    • H03H11/36H03F1/0288H03H7/18H03H7/38
    • Disclosed herein is an asymmetric power divider. The asymmetric power divider includes a power dividing unit, a first matching network, and a second matching network. The power dividing unit supplies different amounts of power to a carrier amplifier and a peaking amplifier, which are connected in parallel. The first matching network is connected between the power dividing unit and the carrier amplifier so as to perform impedance matching between the power dividing unit and the carrier amplifier. The second matching network is connected between the power dividing unit and the peaking amplifier so as to perform impedance matching between the power dividing unit and the peaking amplifier.
    • 本文公开了一种不对称功率分配器。 不对称功率分配器包括功率分配单元,第一匹配网络和第二匹配网络。 功率分配单元向并联的载波放大器和峰化放大器提供不同的功率量。 第一匹配网络连接在功率分配单元和载波放大器之间,以便在功率分配单元和载波放大器之间执行阻抗匹配。 第二匹配网络连接在功率分配单元和峰化放大器之间,以便在功率分配单元和峰化放大器之间执行阻抗匹配。
    • 6. 发明授权
    • Radio frequency switch circuit
    • 射频开关电路
    • US08476959B2
    • 2013-07-02
    • US13016499
    • 2011-01-28
    • Yu Sin KimYoun Suk KimDong Hyun BaekSun Woo Yoon
    • Yu Sin KimYoun Suk KimDong Hyun BaekSun Woo Yoon
    • H03K17/00H01L25/00
    • H01L27/092H01L2924/0002H01P1/15H01L2924/00
    • An RF switch circuit includes an RF switch including a first NMOS switch formed on a chip substrate, a switch controller including a second NMOS switch and a PMOS switch formed on the substrate, for controlling the RF switch, and a limiter including a deep N-type well diode formed on the substrate, for limiting an RF signal level transferred from the RF switch to the switch controller through the substrate. The first NMOS switch includes a first N-type terminal formed on a deep N-type well substrate formed on the substrate, for receiving a driving power through a first floating resistor, a P-type terminal for receiving a body power through a second floating resistor, and two second N-type terminals for receiving a gate power through a third floating resistor. The P-type and two second N-type terminals are formed on a P-type substrate formed on the deep N-type well substrate.
    • RF开关电路包括RF开关,其包括形成在芯片基板上的第一NMOS开关,开关控制器,包括形成在基板上的第二NMOS开关和PMOS开关,用于控制RF开关;以及限幅器, 形成在衬底上的阱型二极管,用于限制通过衬底从RF开关传送到开关控制器的RF信号电平。 第一NMOS开关包括形成在形成在衬底上的深N型阱衬底上的第一N型端子,用于通过第一浮动电阻器接收驱动电力; P型端子,用于通过第二浮置 电阻器和两个第二N型端子,用于通过第三浮动电阻器接收栅极电力。 在深N型阱基板上形成的P型基板上形成有P型和2端的N型端子。
    • 10. 发明授权
    • Multi-stage CMOS power amplifier
    • 多级CMOS功率放大器
    • US08022762B2
    • 2011-09-20
    • US12823420
    • 2010-06-25
    • Youn Suk KimHyo Gun BaeJoong Jin NamJun Goo WonKi Joong Kim
    • Youn Suk KimHyo Gun BaeJoong Jin NamJun Goo WonKi Joong Kim
    • H03F1/00
    • H03F3/45179H03F1/3205H03F3/193H03F3/245H03F3/3022H03F2200/411H03F2200/516H03F2200/534H03F2200/537H03F2200/541
    • There is provided a multi-stage CMOS power amplifier including: a driver amplifier having differential output terminals, inverting differential signals input through first and second input terminals and outputting the respective inverted signals through the differential output terminals; a transformer for power matching having a primary coil connected between the differential output terminals of the driver amplifier and a secondary coil coupled with the primary coil using electromagnetic induction, having a predetermined turns ratio to the primary coil, and connected to a direct current (DC) tuning voltage terminal; and a power amplifier power-amplifying differential signals passing through one end and the other end of the secondary coil of the transformer and outputting the respective power-amplified differential signals through first and second output terminals.
    • 提供了一种多级CMOS功率放大器,包括:具有差分输出端的驱动放大器,通过第一和第二输入端输入的差分信号反相,并通过差分输出端输出各反相信号; 一种用于功率匹配的变压器,其具有连接在所述驱动放大器的差分输出端子之间的初级线圈和使用电磁感应耦合到所述初级线圈的次级线圈,所述次级线圈具有与所述初级线圈的预定匝数比,并且连接到直流 )调谐电压端子; 以及功率放大器功率放大差分信号,其通过变压器的次级线圈的一端和另一端,并通过第一和第二输出端输出相应的功率放大差分信号。