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1. 发明授权

US08476959B2 Radio frequency switch circuit 有权
标题翻译：射频开关电路
公开(公告)号：US08476959B2
公开(公告)日：2013-07-02
申请号：US13016499
申请日：2011-01-28
申请人： Yu Sin Kim , Youn Suk Kim , Dong Hyun Baek , Sun Woo Yoon
发明人： Yu Sin Kim , Youn Suk Kim , Dong Hyun Baek , Sun Woo Yoon
IPC分类号： H03K17/00 , H01L25/00
CPC分类号： H01L27/092 , H01L2924/0002 , H01P1/15 , H01L2924/00
摘要： An RF switch circuit includes an RF switch including a first NMOS switch formed on a chip substrate, a switch controller including a second NMOS switch and a PMOS switch formed on the substrate, for controlling the RF switch, and a limiter including a deep N-type well diode formed on the substrate, for limiting an RF signal level transferred from the RF switch to the switch controller through the substrate. The first NMOS switch includes a first N-type terminal formed on a deep N-type well substrate formed on the substrate, for receiving a driving power through a first floating resistor, a P-type terminal for receiving a body power through a second floating resistor, and two second N-type terminals for receiving a gate power through a third floating resistor. The P-type and two second N-type terminals are formed on a P-type substrate formed on the deep N-type well substrate.
摘要翻译： RF开关电路包括RF开关，其包括形成在芯片基板上的第一NMOS开关，开关控制器，包括形成在基板上的第二NMOS开关和PMOS开关，用于控制RF开关;以及限幅器，形成在衬底上的阱型二极管，用于限制通过衬底从RF开关传送到开关控制器的RF信号电平。第一NMOS开关包括形成在形成在衬底上的深N型阱衬底上的第一N型端子，用于通过第一浮动电阻器接收驱动电力; P型端子，用于通过第二浮置电阻器和两个第二N型端子，用于通过第三浮动电阻器接收栅极电力。在深N型阱基板上形成的P型基板上形成有P型和2端的N型端子。

2. 发明申请

US20110187417A1 RADIO FREQUENCY SWITCH CIRCUIT 有权
标题翻译：无线电频率开关电路
公开(公告)号：US20110187417A1
公开(公告)日：2011-08-04
申请号：US13016349
申请日：2011-01-28
申请人： Yu Sin KIM , Youn Suk KIM , Dong Hyun BAEK , Sun Woo YOON
发明人： Yu Sin KIM , Youn Suk KIM , Dong Hyun BAEK , Sun Woo YOON
IPC分类号： H03K17/94
CPC分类号： H03K17/94 , H01L2924/0002 , H01L2924/00
摘要： A radio frequency (RF) switch circuit in which an RF switch and a switch controller are formed on a single CMOS substrate and floating resistors are connected to a deep N type well substrate, an N type well substrate, and a P type well substrate to thereby increase linearity with respect to input power. In the RF switch having at least one NMOS (N type Metal Oxide Semiconductor) switch changing a transmission path of an RF signal, an N type terminal formed on a first deep N type well substrate receives driving power through a floating resistor, a P type terminal formed on a first P type substrate receives body power through a floating resistor, and the two N type terminals formed on the first P type substrate receive gate power through a floating resistor, and in the switch controller having at least one NMOS switch and at least one PMOS (P type Metal Oxide Semiconductor) switch controlling changing of a path of the RF switch, an N type terminal formed on a second deep N type well substrate and an N type terminal formed on the first N type substrate receive driving power through floating resistors.
摘要翻译：将RF开关和开关控制器形成在单个CMOS基板上的浮动开关电路和浮动电阻器连接到深N型阱基板，N型阱基板和P型阱基板，从而相对于输入功率增加线性度。在具有改变RF信号的传输路径的至少一个NMOS（N型金属氧化物半导体）开关的RF开关中，形成在第一深N型阱基板上的N型端子通过浮动电阻器接收驱动电力，P型形成在第一P型基板上的端子通过浮动电阻器接收主体电力，并且形成在第一P型基板上的两个N型端子通过浮动电阻器接收栅极电力，并且在具有至少一个NMOS开关的开关控制器中控制RF开关的路径变化的至少一个PMOS（P型金属氧化物半导体）开关，形成在第二深N型阱基板上的N型端子和形成在第一N型基板上的N型端子接收驱动电力浮动电阻

3. 发明授权

US08461919B2 Radio frequency switch circuit 有权
标题翻译：射频开关电路
公开(公告)号：US08461919B2
公开(公告)日：2013-06-11
申请号：US13016349
申请日：2011-01-28
申请人： Yu Sin Kim , Youn Suk Kim , Dong Hyun Baek , Sun Woo Yoon
发明人： Yu Sin Kim , Youn Suk Kim , Dong Hyun Baek , Sun Woo Yoon
IPC分类号： H01L25/00
CPC分类号： H03K17/94 , H01L2924/0002 , H01L2924/00
摘要： A radio frequency (RF) switch circuit in which an RF switch and a switch controller are formed on a single CMOS substrate and floating resistors are connected to a deep N type well substrate, an N type well substrate, and a P type well substrate to thereby increase linearity with respect to input power. In the RF switch having at least one NMOS (N type Metal Oxide Semiconductor) switch changing a transmission path of an RF signal, an N type terminal formed on a first deep N type well substrate receives driving power through a floating resistor, a P type terminal formed on a first P type substrate receives body power through a floating resistor, and the two N type terminals formed on the first P type substrate receive gate power through a floating resistor, and in the switch controller having at least one NMOS switch and at least one PMOS (P type Metal Oxide Semiconductor) switch controlling changing of a path of the RF switch, an N type terminal formed on a second deep N type well substrate and an N type terminal formed on the first N type substrate receive driving power through floating resistors.
摘要翻译：将RF开关和开关控制器形成在单个CMOS基板上的浮动开关电路和浮动电阻器连接到深N型阱基板，N型阱基板和P型阱基板，从而相对于输入功率增加线性度。在具有改变RF信号的传输路径的至少一个NMOS（N型金属氧化物半导体）开关的RF开关中，形成在第一深N型阱基板上的N型端子通过浮动电阻器接收驱动电力，P型形成在第一P型基板上的端子通过浮动电阻器接收主体电力，并且形成在第一P型基板上的两个N型端子通过浮动电阻器接收栅极电力，并且在具有至少一个NMOS开关的开关控制器中控制RF开关的路径变化的至少一个PMOS（P型金属氧化物半导体）开关，形成在第二深N型阱基板上的N型端子和形成在第一N型基板上的N型端子接收驱动电力浮动电阻

4. 发明申请

US20110187475A1 RADIO FREQUENCY SWITCH CIRCUIT 有权
标题翻译：无线电频率开关电路
公开(公告)号：US20110187475A1
公开(公告)日：2011-08-04
申请号：US13016499
申请日：2011-01-28
申请人： Yu Sin KIM , Youn Suk KIM , Dong Hyun BAEK , Sun Woo YOON
发明人： Yu Sin KIM , Youn Suk KIM , Dong Hyun BAEK , Sun Woo YOON
IPC分类号： H01P1/15 , H01L27/092
CPC分类号： H01L27/092 , H01L2924/0002 , H01P1/15 , H01L2924/00
摘要： A radio frequency (RF) switch circuit is disclosed to restrict an input signal input to the RF switch from being transferred to a switch controller when a floating resistor is connected to an NMOS FET and a PMOS FET of the RF switch and the switch controller formed through a standard CMOS (Complementary Metal Oxide Semiconductor) process. The RF switch circuit includes: an RF switch having at least one NMOS (N type Metal Oxide Semiconductor) switch formed on a single chip substrate and changing a transmission path of an RF signal; a switch controller having at least one NMOS switch and PMOS (P type Metal Oxide Semiconductor) formed on the chip substrate and controlling changing of a path of the RF switch; and a limiter having a deep N type well diode formed on the chip substrate and limiting the level of an RF signal transferred from the RF switch to the switch controller, wherein the NMOS switch of the RF signal receives corresponding power through a floating resistor, and the at least one NMOS switch and PNMOS switch of the switch controller receives corresponding power through a floating resistor.
摘要翻译：公开了射频（RF）开关电路，用于将浮动电阻器连接到RF开关的NMOS FET和PMOS FET并形成开关控制器时，将输入到RF开关的输入信号限制为传送到开关控制器通过标准CMOS（互补金属氧化物半导体）工艺。 RF开关电路包括：具有至少一个NMOS（N型金属氧化物半导体）开关的RF开关，其形成在单个芯片衬底上并改变RF信号的传输路径; 开关控制器，具有形成在芯片基板上的至少一个NMOS开关和PMOS（P型金属氧化物半导体），并控制RF开关的路径的变化; 以及限制器，其具有形成在芯片基板上的深N型阱二极管，并且限制从RF开关传送到开关控制器的RF信号的电平，其中RF信号的NMOS开关通过浮动电阻器接收相应的功率，以及开关控制器的至少一个NMOS开关和PNMOS开关通过浮动电阻器接收相应的功率。

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