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    • 1. 发明授权
    • Asymmetric power divider
    • 不对称功率分配器
    • US08344824B2
    • 2013-01-01
    • US12768432
    • 2010-04-27
    • Yu Sin KimSong Cheol HongSang Hyun BaekYoun Suk Kim
    • Yu Sin KimSong Cheol HongSang Hyun BaekYoun Suk Kim
    • H03H7/38
    • H03H11/36H03F1/0288H03H7/18H03H7/38
    • Disclosed herein is an asymmetric power divider. The asymmetric power divider includes a power dividing unit, a first matching network, and a second matching network. The power dividing unit supplies different amounts of power to a carrier amplifier and a peaking amplifier, which are connected in parallel. The first matching network is connected between the power dividing unit and the carrier amplifier so as to perform impedance matching between the power dividing unit and the carrier amplifier. The second matching network is connected between the power dividing unit and the peaking amplifier so as to perform impedance matching between the power dividing unit and the peaking amplifier.
    • 本文公开了一种不对称功率分配器。 不对称功率分配器包括功率分配单元,第一匹配网络和第二匹配网络。 功率分配单元向并联的载波放大器和峰化放大器提供不同的功率量。 第一匹配网络连接在功率分配单元和载波放大器之间,以便在功率分配单元和载波放大器之间执行阻抗匹配。 第二匹配网络连接在功率分配单元和峰化放大器之间,以便在功率分配单元和峰化放大器之间执行阻抗匹配。
    • 3. 发明授权
    • Radio frequency switch circuit
    • 射频开关电路
    • US08461919B2
    • 2013-06-11
    • US13016349
    • 2011-01-28
    • Yu Sin KimYoun Suk KimDong Hyun BaekSun Woo Yoon
    • Yu Sin KimYoun Suk KimDong Hyun BaekSun Woo Yoon
    • H01L25/00
    • H03K17/94H01L2924/0002H01L2924/00
    • A radio frequency (RF) switch circuit in which an RF switch and a switch controller are formed on a single CMOS substrate and floating resistors are connected to a deep N type well substrate, an N type well substrate, and a P type well substrate to thereby increase linearity with respect to input power. In the RF switch having at least one NMOS (N type Metal Oxide Semiconductor) switch changing a transmission path of an RF signal, an N type terminal formed on a first deep N type well substrate receives driving power through a floating resistor, a P type terminal formed on a first P type substrate receives body power through a floating resistor, and the two N type terminals formed on the first P type substrate receive gate power through a floating resistor, and in the switch controller having at least one NMOS switch and at least one PMOS (P type Metal Oxide Semiconductor) switch controlling changing of a path of the RF switch, an N type terminal formed on a second deep N type well substrate and an N type terminal formed on the first N type substrate receive driving power through floating resistors.
    • 将RF开关和开关控制器形成在单个CMOS基板上的浮动开关电路和浮动电阻器连接到深N型阱基板,N型阱基板和P型阱基板, 从而相对于输入功率增加线性度。 在具有改变RF信号的传输路径的至少一个NMOS(N型金属氧化物半导体)开关的RF开关中,形成在第一深N型阱基板上的N型端子通过浮动电阻器接收驱动电力,P型 形成在第一P型基板上的端子通过浮动电阻器接收主体电力,并且形成在第一P型基板上的两个N型端子通过浮动电阻器接收栅极电力,并且在具有至少一个NMOS开关的开关控制器中 控制RF开关的路径变化的至少一个PMOS(P型金属氧化物半导体)开关,形成在第二深N型阱基板上的N型端子和形成在第一N型基板上的N型端子接收驱动电力 浮动电阻
    • 5. 发明授权
    • Radio frequency switch circuit
    • 射频开关电路
    • US08476959B2
    • 2013-07-02
    • US13016499
    • 2011-01-28
    • Yu Sin KimYoun Suk KimDong Hyun BaekSun Woo Yoon
    • Yu Sin KimYoun Suk KimDong Hyun BaekSun Woo Yoon
    • H03K17/00H01L25/00
    • H01L27/092H01L2924/0002H01P1/15H01L2924/00
    • An RF switch circuit includes an RF switch including a first NMOS switch formed on a chip substrate, a switch controller including a second NMOS switch and a PMOS switch formed on the substrate, for controlling the RF switch, and a limiter including a deep N-type well diode formed on the substrate, for limiting an RF signal level transferred from the RF switch to the switch controller through the substrate. The first NMOS switch includes a first N-type terminal formed on a deep N-type well substrate formed on the substrate, for receiving a driving power through a first floating resistor, a P-type terminal for receiving a body power through a second floating resistor, and two second N-type terminals for receiving a gate power through a third floating resistor. The P-type and two second N-type terminals are formed on a P-type substrate formed on the deep N-type well substrate.
    • RF开关电路包括RF开关,其包括形成在芯片基板上的第一NMOS开关,开关控制器,包括形成在基板上的第二NMOS开关和PMOS开关,用于控制RF开关;以及限幅器, 形成在衬底上的阱型二极管,用于限制通过衬底从RF开关传送到开关控制器的RF信号电平。 第一NMOS开关包括形成在形成在衬底上的深N型阱衬底上的第一N型端子,用于通过第一浮动电阻器接收驱动电力; P型端子,用于通过第二浮置 电阻器和两个第二N型端子,用于通过第三浮动电阻器接收栅极电力。 在深N型阱基板上形成的P型基板上形成有P型和2端的N型端子。
    • 6. 发明申请
    • RESISTOR-SHARING SWITCHING CIRCUIT
    • 电阻共享切换电路
    • US20130015903A1
    • 2013-01-17
    • US13532554
    • 2012-06-25
    • Yu Sin KimSung Hwan Park
    • Yu Sin KimSung Hwan Park
    • H03K17/56
    • H03K17/693H03K2217/0018
    • Disclosed herein is a resistor-sharing switching circuit, including: a first switching element turning on/off between a first input and output terminal and a second input and output terminal; a second switching element turning on/off between the first input and output terminal and a third input and output terminal; a signal transmission unit connected to both a control terminal of the first switching element and a control terminal of the second switching element; and a resistor having one end connected to the signal transmission unit and the other end connected to a control signal input terminal.
    • 这里公开了一种电阻共享切换电路,包括:第一开关元件在第一输入和输出端子与第二输入和输出端子之间接通/断开; 第二开关元件在第一输入和输出端子与第三输入和输出端子之间接通/断开; 连接到第一开关元件的控制端子和第二开关元件的控制端子的信号传输单元; 以及电阻器,其一端连接到信号传输单元,另一端连接到控制信号输入端。
    • 7. 发明申请
    • INVERTER AND SWITCHING CIRCUIT
    • 逆变器和开关电路
    • US20120319737A1
    • 2012-12-20
    • US13494914
    • 2012-06-12
    • Yu Sin KimSang Hee KimDong Hyun BaekSun Woo YunSung Hwan Park
    • Yu Sin KimSang Hee KimDong Hyun BaekSun Woo YunSung Hwan Park
    • H03K17/687H03K5/01
    • H03K19/0016H04B1/44
    • Disclosed herein are an inverter and an antenna circuit. The inverter that receives control signals, inverts the control signals including a first control signal, a second control signal, and a third control signal, and outputs the inverted control signals, includes: a first MOS transistor having a gate to which a first control signal is applied and a source that is grounded; a second MOS transistor having a gate to which a third control signal is applied and a source to which a second control signal is applied; and a third MOS transistor having a gate to which a second control signal is applied and a source to which a third control signal is applied, wherein drains of the first MOS transistor, the second MOS transistor, and the third MOS transistor are connected to an output terminal.
    • 这里公开了逆变器和天线电路。 接收控制信号的逆变器,使包括第一控制信号,第二控制信号和第三控制信号的控制信号反相并输出反相控制信号,包括:第一MOS晶体管,具有栅极,第一控制信号 被施加和接地源; 具有施加了第三控制信号的栅极和施加第二控制信号的源极的第二MOS晶体管; 以及第三MOS晶体管,其具有施加第二控制信号的栅极和施加了第三控制信号的源极,其中所述第一MOS晶体管,所述第二MOS晶体管和所述第三MOS晶体管的漏极连接到 输出端子。
    • 8. 发明申请
    • METHOD FOR COMPENSATING PERFORMANCE DEGRADATION OF RFIC USING EM SIMULATION
    • 使用EM模拟来补偿RFIC性能降低的方法
    • US20080134112A1
    • 2008-06-05
    • US11943211
    • 2007-11-20
    • Yu Sin KimChang Seok LeeChang Soo YangKwang Du LeeHak Sun Kim
    • Yu Sin KimChang Seok LeeChang Soo YangKwang Du LeeHak Sun Kim
    • G06F17/50
    • G06F17/5068G06F17/5036
    • Provided is a method for compensating performance degradation of a radio frequency integrated circuit (RFIC) using an EM simulation. The method includes the steps of: (a) extracting the design specifications of the RFIC so as design and simulate a circuit; (b) designing the layout of the designed and simulated circuit, and extracting layout parameters by using the designed layout; (c) simplifying the layout and carrying out the EM simulation to extract performance parameters; (d) carrying out a circuit simulation by using the extracted layout parameters and performance parameters, and judging whether the results of the circuit simulation satisfy the design specifications of the RFIC or not; (e) when it is judged that the results of the circuit simulation satisfy the design specifications of the RFIC, performing a circuit manufacturing process; and (f) when it is not judged that the results of the circuit simulation satisfy the design specifications of the RFIC, partially removing the layout, and carrying out the EM simulation, thereby analyzing and compensating a performance degradation region.
    • 提供了一种使用EM模拟来补偿射频集成电路(RFIC)的性能劣化的方法。 该方法包括以下步骤:(a)提取RFIC的设计规范,以设计和模拟电路; (b)设计和仿真电路的布局设计,并通过设计布局提取布局参数; (c)简化布局并执行EM仿真以提取性能参数; (d)使用提取的布局参数和性能参数进行电路仿真,判断电路仿真结果是否符合RFIC的设计规范; (e)当判断电路仿真的结果满足RFIC的设计规范时,执行电路制造过程; 和(f)当不判断电路仿真的结果满足RFIC的设计规范时,部分地去除布局并进行EM仿真,从而分析和补偿性能退化区域。
    • 9. 发明授权
    • RF antenna switch circuit, high frequency antenna component, and mobile communication device
    • RF天线开关电路,高频天线组件和移动通信设备
    • US08909171B2
    • 2014-12-09
    • US13462753
    • 2012-05-02
    • Yu Sin KimSung Hwan Park
    • Yu Sin KimSung Hwan Park
    • H04B1/44
    • H04B1/44
    • The present invention relates to an RF antenna switch circuit, a high frequency antenna component, and a mobile communication device. According to the present invention, an RF antenna switch circuit including: an antenna; an input/output terminal including at least one transmitting terminal and at least one receiving terminal; at least one transmitting switch block disposed on a transmitting path(s) between the at least one transmitting terminal and a common node; at least one receiving switch block disposed on a receiving path(s) between the at least one receiving terminal and the common node; and a common switch block sharing a switching device and turned on by synchronizing with each of transmitting and receiving operations on transceiving the signal through the antenna is provided. When one of the transmitting and receiving operations is turned on, the other is turned off.
    • 本发明涉及一种RF天线切换电路,高频天线部件和移动通信装置。 根据本发明,一种RF天线切换电路,包括:天线; 输入/输出终端,包括至少一个发送终端和至少一个接收终端; 至少一个发送开关块,设置在所述至少一个发送终端和公共节点之间的发送路径上; 至少一个接收交换块,设置在所述至少一个接收终端和所述公共节点之间的接收路径上; 并且提供共享切换设备并通过与通过天线收发信号的发送和接收操作中的每一个同步而接通的公共开关块。 当发送和接收操作之一被打开时,另一个被关闭。
    • 10. 发明申请
    • RF ANTENNA SWITCH CIRCUIT, HIGH FREQUENCY ANTENNA COMPONENT, AND MOBILE COMMUNICATION DEVICE
    • 射频天线切换电路,高频天线组件和移动通信设备
    • US20130023221A1
    • 2013-01-24
    • US13462753
    • 2012-05-02
    • Yu Sin KimSung Hwan Park
    • Yu Sin KimSung Hwan Park
    • H04B1/44H04W88/02
    • H04B1/44
    • The present invention relates to an RF antenna switch circuit, a high frequency antenna component, and a mobile communication device. According to the present invention, an RF antenna switch circuit including: an antenna; an input/output terminal including at least one transmitting terminal and at least one receiving terminal; at least one transmitting switch block disposed on a transmitting path(s) between the at least one transmitting terminal and a common node; at least one receiving switch block disposed on a receiving path(s) between the at least one receiving terminal and the common node; and a common switch block sharing a switching device and turned on by synchronizing with each of transmitting and receiving operations on transceiving the signal through the antenna is provided. When one of the transmitting and receiving operations is turned on, the other is turned off.
    • 本发明涉及一种RF天线切换电路,高频天线部件和移动通信装置。 根据本发明,一种RF天线切换电路,包括:天线; 输入/输出终端,包括至少一个发送终端和至少一个接收终端; 至少一个发送开关块,设置在所述至少一个发送终端和公共节点之间的发送路径上; 至少一个接收交换块,设置在所述至少一个接收终端和所述公共节点之间的接收路径上; 并且提供共享切换设备并通过与通过天线收发信号的发送和接收操作中的每一个同步而接通的公共开关块。 当发送和接收操作之一被打开时,另一个被关闭。