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    • 6. 发明申请
    • Target apparatus
    • 目标装置
    • US20060291607A1
    • 2006-12-28
    • US11471263
    • 2006-06-20
    • Bong HongJong ChaiMin LeeWon HwangMin HurSang KimDong AnIn JungHong ChangJoon KangSeong HongYu KimTae YangJung Kim
    • Bong HongJong ChaiMin LeeWon HwangMin HurSang KimDong AnIn JungHong ChangJoon KangSeong HongYu KimTae YangJung Kim
    • G21G1/06
    • H05H6/00G21G4/06
    • Provided is a target apparatus of high durability so that a thin film is not deformed or damaged under an environment of high temperature and high pressure generated during a nuclear reaction between proton and H218O concentrate, and a productivity of 18F can be increased. The target apparatus includes a cavity member having a cavity, in which H218O concentrate is received, for producing 18F using a nuclear reaction between proton irradiated onto the H218O concentrate in the cavity and the H218O concentrate. The cavity member includes: a front opening and a rear opening facing opposite directions to each other on the irradiation path of the proton, and connected to the cavity so that the cavity can be communicated with the outside; a front thin film and a rear thin film disposed to block the front opening and the rear opening, respectively; and a front reinforcing member and a rear reinforcing member coupled to the cavity member so as to support the front thin film and the rear thin film in order to prevent the front and rear thin films from being swelled due to a pressure rising in the cavity during the nuclear reaction, wherein the front reinforcing member includes a plurality of penetration holes penetrating the front reinforcing member in the irradiation direction of the proton.
    • 提供了一种高耐久性的目标装置,使得在质子与H 2 O之间的核反应中产生的高温高压环境下,薄膜不变形或损坏, SUP浓缩物,并且可提高 18F的生产率。 目标装置包括具有空腔的空腔构件,其中容纳有H 2 O 18 O 2浓缩物,用于使用核反应产生“18” 在质子辐射到空腔中的H 2 H 2 O 20浓缩物和H 2 O 18 O 2浓缩物之间。 空腔构件包括:在质子的照射路径上彼此相对的前开口和后开口,并且连接到空腔,使得空腔能够与外部连通; 设置成分别阻挡前开口和后开口的前薄膜和后薄膜; 以及连接到空腔构件的前部加强构件和后部加强构件,以便支撑前部薄膜和后部薄膜,以防止前后薄膜由于空腔中的压力升高而膨胀 核反应,其中前加强构件包括在质子的照射方向上穿透前加强构件的多个穿透孔。
    • 8. 发明申请
    • Advanced membrane electrode assemblies for fuel cells
    • 用于燃料电池的先进膜电极组件
    • US20060240301A1
    • 2006-10-26
    • US11113678
    • 2005-04-22
    • Yu KimBryan Pivovar
    • Yu KimBryan Pivovar
    • H01M8/10B05D5/12
    • B01D69/12H01M4/881
    • A method of preparing advanced membrane electrode assemblies (MEA) for use in fuel cells. A base polymer is selected for a base membrane. An electrode composition is selected to optimize properties exhibited by the membrane electrode assembly based on the selection of the base polymer. A property-tuning coating layer composition is selected based on compatibility with the base polymer and the electrode composition. A solvent is selected based on the interaction of the solvent with the base polymer and the property-tuning coating layer composition. The MEA is assembled by preparing the base membrane and then applying the property-tuning coating layer to form a composite membrane. Finally, a catalyst is applied to the composite membrane.
    • 一种制备用于燃料电池的先进膜电极组件(MEA)的方法。 选择基础聚合物用于基膜。 选择电极组合物以根据基础聚​​合物的选择来优化膜电极组件所表现出的性能。 基于与基础聚合物和电极组成的相容性来选择性质调节涂层组合物。 基于溶剂与基础聚合物和性能调节涂层组合物的相互作用来选择溶剂。 通过制备基膜,然后施加性能调节涂层以形成复合膜来组装MEA。 最后,将催化剂应用于复合膜。
    • 10. 发明申请
    • Multi-wavelength semiconductor laser device
    • 多波长半导体激光器件
    • US20060093007A1
    • 2006-05-04
    • US11159350
    • 2005-06-23
    • Ki MoonHye OhJong ParkYu Kim
    • Ki MoonHye OhJong ParkYu Kim
    • H01S5/00
    • H01S5/4025H01S3/08086H01S3/0809
    • A semiconductor laser device comprises: a substrate having a top surface divided into a first region and a second region; a high-output LD including a first conductivity-type clad layer, an active layer, and a second conductivity-type clad layer including an upper portion having a first ridge structure, sequentially formed on the first region of the substrate; and a low-output LD including a first conductivity-type clad layer, an active layer, and a second conductivity-type clad layer including an upper portion having a second ridge structure, sequentially formed on the second region of the substrate, wherein the first and second ridge structures are formed in such a manner that they are extended to both ends opposed to each other, the first ridge structure is bent at two or more bending positions, and the second ridge structure is rectilinear.
    • 半导体激光装置包括:基板,其具有分为第一区域和第二区域的顶表面; 包括依次形成在所述基板的所述第一区域上的包括具有第一脊结构的上部的第一导电型覆盖层,有源层和第二导电型覆盖层的高输出LD, 以及依次形成在所述基板的第二区域上的包括第一导电型覆盖层,有源层和包括具有第二脊结构的上部的第二导电型覆盖层的低输出LD,其中, 并且第二脊结构形成为使得它们彼此相对延伸到两个端部,第一脊结构在两个或更多个弯曲位置弯曲,并且第二脊结构是直线的。