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    • 7. 发明授权
    • Array substrate and display panel
    • 阵列基板和显示面板
    • US07781268B2
    • 2010-08-24
    • US11737626
    • 2007-04-19
    • Jae-Seong ByunHo-Min KangBae-Hyoun Jung
    • Jae-Seong ByunHo-Min KangBae-Hyoun Jung
    • H01L21/82
    • H01L27/124H01L27/1288
    • A manufacturing method for an array substrate, comprising forming a gate metal on a base substrate, patterning the gate metal to form a gate part having a gate electrode, a gate line and a gate pad. Then, a gate insulating layer, an active layer and a data metal are sequentially formed on the base substrate to cover the gate part. The data metal is patterned to form a data part having a data electrode, a data pad and a pixel electrode. Then, the exposed portion of the active layer is removed, and the exposed portion of the gate insulation layer is removed. When the data electrode is divided into a source electrode and a drain electrode, a switching device is completed.
    • 一种阵列基板的制造方法,包括在基底基板上形成栅极金属,构图所述栅极金属,形成具有栅极电极,栅极线和栅极焊盘的栅极部分。 然后,在基底基板上依次形成栅极绝缘层,有源层和数据金属,以覆盖栅极部分。 数据金属被图案化以形成具有数据电极,数据焊盘和像素电极的数据部分。 然后,去除有源层的暴露部分,并去除栅极绝缘层的暴露部分。 当数据电极被分成源电极和漏极时,完成开关装置。
    • 8. 发明授权
    • Thin film transistor array panel and method for fabricating the same
    • 薄膜晶体管阵列面板及其制造方法
    • US07312470B2
    • 2007-12-25
    • US10481236
    • 2002-06-20
    • Jae-Seong ByunKun-Jong LeeHyun-Su LimJong-Hwan ChaBae-Hyoun Jung
    • Jae-Seong ByunKun-Jong LeeHyun-Su LimJong-Hwan ChaBae-Hyoun Jung
    • H01L29/04
    • G02F1/13458G02F1/13439G02F2001/136236H01L29/4908
    • The present invention relates to a TFT array panel and a fabricating method thereof. A gate insulating layer and a passivation layer are formed by printing organic insulating material in order to simplify the fabricating process. The inventive TFT panel includes an insulating substrate, and a gate wire formed on the insulating substrate. The gate wire includes a gate line and a gate pad connected to one end of the gate line. A gate insulating layer is formed on the insulating substrate while exposing the gate pad and a portion of the gate line close to the gate pad. A semiconductor pattern is formed on the gate insulating layer. A data wire is formed on the gate insulating layer. The data wire includes a data line, a source electrode connected to the data line, a drain electrode facing the source electrode and a data pad connected to one end of the data line. A passivation layer is formed on the gate insulating layer while exposing the data pad and a portion of the data line close to the data pad.
    • 本发明涉及一种TFT阵列面板及其制造方法。 通过印刷有机绝缘材料形成栅绝缘层和钝化层,以简化制造工艺。 本发明的TFT面板包括绝缘基板和形成在绝缘基板上的栅极线。 栅极线包括连接到栅极线的一端的栅极线和栅极焊盘。 在绝缘基板上形成栅极绝缘层,同时使栅极焊盘和栅极线的一部分接近栅极焊盘。 在栅极绝缘层上形成半导体图形。 在栅极绝缘层上形成数据线。 数据线包括数据线,连接到数据线的源电极,面对源电极的漏电极和连接到数据线的一端的数据焊盘。 在栅极绝缘层上形成钝化层,同时使数据焊盘和数据线的一部分接近数据焊盘。