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1. 发明授权

US06626968B2 Slurry for chemical mechanical polishing process and method of manufacturing semiconductor device using the same 失效
公开(公告)号：US06626968B2
公开(公告)日：2003-09-30
申请号：US09861697
申请日：2001-05-21
申请人： Young-rae Park , Jung-yup Kim , Bo-un Yoon , Kwang-bok Kim , Jae-phil Boo , Jong-won Lee , Sang-rok Hah , Kyung-hyun Kim , Chang-ki Hong
发明人： Young-rae Park , Jung-yup Kim , Bo-un Yoon , Kwang-bok Kim , Jae-phil Boo , Jong-won Lee , Sang-rok Hah , Kyung-hyun Kim , Chang-ki Hong
IPC分类号： C09G102
CPC分类号： H01L21/76224 , B24B37/044 , C09G1/02 , H01L21/31053
摘要： A slurry composition useful for chemical mechanical polishing of the surface of a material layer, e.g., a silicon oxide layer, is disclosed. A first material surface which is exposed to the slurry exhibits hydrophilicity, while a second material layer, e.g., a polysilicon layer, the surface of which is also exposed to the slurry, exhibits hydrophobicity, and accordingly acts as a polishing stopping layer. The slurry composition consists essentially of water, abrasive grains, and a polymer additive having both hydrophilic and hydrophobic functional groups.

2. 发明申请

US20070155178A1 Slurry for chemical mechanical polishing process and method of manufacturing semiconductor device using the same 审中-公开
标题翻译：用于化学机械抛光工艺的浆料及使用其制造半导体器件的方法
公开(公告)号：US20070155178A1
公开(公告)日：2007-07-05
申请号：US11712931
申请日：2007-03-01
申请人： Young-rae Park , Jung-yup Kim , Bo-un Yoon , Kwang-bok Kim , Jae-phill Boo , Jong-won Lee , Sang-rok Hah , Kyung-hyun Kim , Chang-ki Hong
发明人： Young-rae Park , Jung-yup Kim , Bo-un Yoon , Kwang-bok Kim , Jae-phill Boo , Jong-won Lee , Sang-rok Hah , Kyung-hyun Kim , Chang-ki Hong
IPC分类号： H01L21/306 , H01L21/461 , B44C1/22 , C23F1/00 , H01L21/302
CPC分类号： H01L21/76224 , B24B37/044 , C09G1/02 , H01L21/31053
摘要： A slurry composition useful for chemical mechanical polishing of the surface of a material layer, e.g., a silicon oxide layer, is disclosed. A first material surface which is exposed to the slurry exhibits hydrophilicity, while a second material layer, e.g., a polysilicon layer, the surface of which is also exposed to the slurry, exhibits hydrophobicity, and accordingly acts as a polishing stopping layer. The slurry composition consists essentially of water, abrasive grains, and a polymer additive having both hydrophilic and hydrophobic functional groups.
摘要翻译：公开了一种用于材料层表面例如氧化硅层的化学机械抛光的浆料组合物。暴露于浆料的第一材料表面显示出亲水性，而第二材料层，例如其表面也暴露于浆料的多晶硅层，表现出疏水性，因此用作抛光停止层。浆料组合物基本上由水，磨料颗粒和具有亲水和疏水官能团的聚合物添加剂组成。

3. 发明授权

US07196010B2 Slurry for chemical mechanical polishing process and method of manufacturing semiconductor device using the same 失效
公开(公告)号：US07196010B2
公开(公告)日：2007-03-27
申请号：US10639541
申请日：2003-08-12
申请人： Young-rae Park , Jung-yup Kim , Bo-un Yoon , Kwang-bok Kim , Jae-phil Boo , Jong-won Lee , Sang-rok Hah , Kyung-hyun Kim , Chang-ki Hong
发明人： Young-rae Park , Jung-yup Kim , Bo-un Yoon , Kwang-bok Kim , Jae-phil Boo , Jong-won Lee , Sang-rok Hah , Kyung-hyun Kim , Chang-ki Hong
IPC分类号： H01L21/302
CPC分类号： H01L21/76224 , B24B37/044 , C09G1/02 , H01L21/31053
摘要： A slurry composition useful for chemical mechanical polishing of the surface of a material layer, e.g., a silicon oxide layer, is disclosed. A first material surface which is exposed to the slurry exhibits hydrophilicity, while a second material layer, e.g., a polysilicon layer, the surface of which is also exposed to the slurry, exhibits hydrophobicity, and accordingly acts as a polishing stopping layer. The slurry composition consists essentially of water, abrasive grains, and a polymer additive having both hydrophilic and hydrophobic functional groups.

4. 发明授权

US06716732B2 Method for fabricating a contact pad of semiconductor device 有权
标题翻译：制造半导体器件接触焊盘的方法
公开(公告)号：US06716732B2
公开(公告)日：2004-04-06
申请号：US09986445
申请日：2001-11-08
申请人： Young-rae Park , Jung-yup Kim , Bo-un Yoon , Sang-rok Hah
发明人： Young-rae Park , Jung-yup Kim , Bo-un Yoon , Sang-rok Hah
IPC分类号： H01L213205
CPC分类号： H01L21/76897 , H01L21/76895
摘要： A method of fabricating a contact pad of a semiconductor device is disclosed. The method includes forming a stopping layer over the semiconductor substrate. An interdielectric layer is formed over the stopping layer, and the interdielectric layer is planarized to expose at least a gate upper dielectric layer by using a material which exhibits a high-polishing selectivity with respect to the interdielectric layer. The interdielectric layer is etched in a region in which a contact pad will be formed on the semiconductor substrate. A conductive material is deposited on the semiconductor substrate. Finally, planarizing is carried out using a material which exhibits a high-polishing selectivity of the upper dielectric layer with respect to the conductive material.
摘要翻译：公开了制造半导体器件的接触焊盘的方法。该方法包括在半导体衬底上形成阻挡层。在停止层上形成介电层，并且通过使用相对于介电层表现出高抛光选择性的材料，使介电层平坦化以至少暴露出栅极上电介质层。在其中将在半导体衬底上形成接触焊盘的区域中蚀刻介电层。导电材料沉积在半导体衬底上。最后，使用表现出相对于导电材料的上电介质层的高抛光选择性的材料进行平面化。

5. 发明授权

US06518157B2 Methods of planarizing insulating layers on regions having different etching rates 失效
公开(公告)号：US06518157B2
公开(公告)日：2003-02-11
申请号：US09917601
申请日：2001-07-27
申请人： Gee-won Nam , Gi-jong Park , Hong-kyu Hwang , Jun-shik Bae , Young-rae Park , Jung-yup Kim , Bo-un Yoon , Sang-rok Hah
发明人： Gee-won Nam , Gi-jong Park , Hong-kyu Hwang , Jun-shik Bae , Young-rae Park , Jung-yup Kim , Bo-un Yoon , Sang-rok Hah
IPC分类号： H01L2144
CPC分类号： H01L21/31056 , H01L21/31053 , H01L21/76819
摘要： An insulating layer can be formed on first and second adjacent regions of an integrated circuit having a first step difference therebetween, the first and second regions having first and second respective etch rates associated therewith. A recess can be formed in the insulating layer on the second region having a second step difference with the first region that is less than the first step difference to provide a portion of the insulating layer between the first and second adjacent regions having a third step difference with the first region that is greater than the second step difference. A width of the portion is selected based on a difference between the first and second etch rates.

6. 发明授权

US06585570B2 Method and apparatus for supplying chemical-mechanical polishing slurries 有权
标题翻译：用于提供化学机械抛光浆料的方法和设备
公开(公告)号：US06585570B2
公开(公告)日：2003-07-01
申请号：US09848371
申请日：2001-05-03
申请人： Jung-yup Kim , Young-rae Park , Sang-rok Hah
发明人： Jung-yup Kim , Young-rae Park , Sang-rok Hah
IPC分类号： B24B1900
CPC分类号： B24B37/04 , B24B1/04 , B24B57/02
摘要： In method and apparatus for supplying a slurry for a chemical mechanical polishing (CMP) process, a slurry pre-treatment is provided for minimizing the size of abrasive particles in the slurry. In the slurry supplying method, after applying acoustic energy to the slurry to de-agglomerate agglomerated abrasive particles within the slurry, any remaining oversized abrasive particles having a diameter greater than a reference size are filtered out from the slurry. The acoustic energy application step and the filtering step are repeatedly performed for a predetermined time period while circulating the slurry. The slurry supplying apparatus includes a tank for holding a slurry, acoustic energy sources for applying acoustic energy to the slurry held within the tank, a slurry circulating line for circulating the slurry drawn out of the tank, which is connected to the tank, a filter for filtering out abrasive particle clumps having a diameter greater than a reference size from the slurry, which is disposed in the slurry circulating line, and a slurry supplying line for supplying the slurry from the slurry circulating line to a CMP equipment.
摘要翻译：在用于供应用于化学机械抛光（CMP）工艺的浆料的方法和设备中，提供了浆料预处理以使浆料中磨料颗粒的尺寸最小化。在浆料供给方法中，在向浆料中施加声能以使浆料中的附聚磨料颗粒去聚集之前，将任何剩余的具有大于参考尺寸的直径的过大的磨料颗粒从浆料中过滤掉。声音能量施加步骤和过滤步骤在循环淤浆期间重复进行预定时间段。浆料供给装置包括用于保持浆料的罐，用于向保持在罐内的浆料提供声能的声能源，用于使从罐中抽出的浆料循环的浆料循环管线，其与罐连接，过滤器用于从布置在浆料循环管线中的浆料中过滤出具有大于参考尺寸的直径的磨料颗粒团，以及用于将浆料从淤浆循环管线供应到CMP设备的浆料供应管线。

7. 发明授权

US06498102B2 Method for planarizing a semiconductor device using ceria-based slurry 有权
标题翻译：使用二氧化铈基浆料平坦化半导体器件的方法
公开(公告)号：US06498102B2
公开(公告)日：2002-12-24
申请号：US09803741
申请日：2001-03-12
申请人： Jung-yup Kim , Young-rae Park , Sang-rok Hah
发明人： Jung-yup Kim , Young-rae Park , Sang-rok Hah
IPC分类号： H01L21302
CPC分类号： H01L21/31053
摘要： A chemical mechanical polishing (CMP) process employs a ceria-based slurry as an abrasive. In particular, a nitride pattern is formed over a semiconductor substrate, and an oxide layer is then formed over the semiconductor substrate and the nitride pattern. Next, a sacrificial insulation layer which is devoid of surface steps is formed over the oxide layer. The sacrificial insulation layer and the oxide layer are then polished by CMP using the ceria-based slurry and using the nitride pattern as a stopper.
摘要翻译：化学机械抛光（CMP）工艺采用二氧化铈基浆料作为研磨剂。特别地，在半导体衬底上形成氮化物图案，然后在半导体衬底和氮化物图案之上形成氧化物层。接下来，在氧化物层上形成没有表面台阶的牺牲绝缘层。然后通过CMP使用二氧化铈基浆料和使用氮化物图案作为塞子来抛光牺牲绝缘层和氧化物层。

8. 发明授权

US06858452B2 Method for isolating self-aligned contact pads 失效
标题翻译：隔离自对准接触垫的方法
公开(公告)号：US06858452B2
公开(公告)日：2005-02-22
申请号：US10688610
申请日：2003-10-17
申请人： Jeong-heon Park , Chang-ki Hong , Jae-dong Lee , Young-rae Park , Ho-Young Kim
发明人： Jeong-heon Park , Chang-ki Hong , Jae-dong Lee , Young-rae Park , Ho-Young Kim
IPC分类号： H01L21/304 , H01L21/321 , H01L21/60 , H01L21/66
CPC分类号： H01L21/76897 , H01L21/3212 , H01L22/00
摘要： A method for isolating SAC pads of a semiconductor device, including determining a chemical mechanical polishing process time necessary to isolate the SAC pads a desired amount by referring to a relationship equation between the extent of isolation of the self-aligned contact pads and the chemical-mechanical polishing process time. The chemical mechanical polishing process is performed for the determined process time on the semiconductor device to isolate the self-aligned contact pads the desired amount. The relationship equation is determined using a test semiconductor device.
摘要翻译：一种用于分离半导体器件的SAC焊盘的方法，包括通过参考自对准接触焊盘的隔离程度与化学机械抛光处理时间之间的关系式来确定将SAC焊盘隔离所需量所需的化学机械抛光处理时间，机械抛光加工时间。对半导体器件上确定的处理时间执行化学机械抛光工艺，以将自对准接触焊盘隔离所需量。使用测试半导体器件确定关系式。

9. 发明授权

US06695684B2 Chemical mechanical polishing apparatus having a cleaner for cleaning a conditioning disc and method of conditioning a polishing pad of the apparatus 失效
标题翻译：具有用于清洁调节盘的清洁剂的化学机械抛光装置和调节该装置的抛光垫的方法
公开(公告)号：US06695684B2
公开(公告)日：2004-02-24
申请号：US09969992
申请日：2001-10-04
申请人： Young-rae Park , Ho-young Kim , Hong-kyu Hwang
发明人： Young-rae Park , Ho-young Kim , Hong-kyu Hwang
IPC分类号： B24B100
CPC分类号： B24B53/017 , H01L21/67046
摘要： A chemical mechanical polishing apparatus includes a polishing pad on which a wafer requiring planarization is placed, a conditioning disc having an abrasive surface for conditioning the polishing pad, a tank containing de-ionized water in which the conditioning disc soaks while standing by, and a cleaner for cleaning the conditioning disc. The conditioning disc cleaner is disposed in the tank of de-ionized water to remove polishing impurities from an abrasive surface of the conditioning disc. The cleaner may include a brush having bristles against which the abrasive surface of the conditioning disc is placed when it is lowered into the tank. In operation, after the wafer is polished, an abrasive surface of the conditioning disc is run over the upper surface of the polishing pad to condition the surface of the polishing pad. Then the conditioning disc is moved off of the upper surface of the polishing pad and to a stand-by position in which the abrasive surface of the disc is submerged in a liquid. Finally, while the conditioning disc is in its stand-by position, impurities are forced off of the abrasive surface and into the liquid by the cleaner disposed in the liquid. The conditioning disc is thus cleaned so that impurities are not transferred to the polishing pad during the next conditioning process.
摘要翻译：化学机械抛光装置包括其上放置有需要平面化的晶片的抛光垫，具有用于调节抛光垫的研磨表面的调节盘，包含调节盘在静置时浸泡的去离子水的罐，以及用于清洁调理盘的清洁剂。调节盘清洁器设置在去离子水的罐中，以从调理盘的研磨表面去除抛光杂质。清洁器可以包括具有刷毛的刷子，当调节盘的研磨表面下降到罐中时，该刷头与该刷头对准。在操作中，在抛光晶片之后，调节盘的研磨表面在抛光垫的上表面上延伸以调节抛光垫的表面。然后调节盘从抛光垫的上表面移动到盘的研磨表面浸没在液体中的待机位置。最后，当调节盘处于其待机位置时，通过设置在液体中的清洁剂将杂质从研磨表面强制离开液体。因此，调节盘被清洁，使得杂质在下一个调理过程中不会转移到抛光垫。

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