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1. 发明授权

US06626968B2 Slurry for chemical mechanical polishing process and method of manufacturing semiconductor device using the same 失效
公开(公告)号：US06626968B2
公开(公告)日：2003-09-30
申请号：US09861697
申请日：2001-05-21
申请人： Young-rae Park , Jung-yup Kim , Bo-un Yoon , Kwang-bok Kim , Jae-phil Boo , Jong-won Lee , Sang-rok Hah , Kyung-hyun Kim , Chang-ki Hong
发明人： Young-rae Park , Jung-yup Kim , Bo-un Yoon , Kwang-bok Kim , Jae-phil Boo , Jong-won Lee , Sang-rok Hah , Kyung-hyun Kim , Chang-ki Hong
IPC分类号： C09G102
CPC分类号： H01L21/76224 , B24B37/044 , C09G1/02 , H01L21/31053
摘要： A slurry composition useful for chemical mechanical polishing of the surface of a material layer, e.g., a silicon oxide layer, is disclosed. A first material surface which is exposed to the slurry exhibits hydrophilicity, while a second material layer, e.g., a polysilicon layer, the surface of which is also exposed to the slurry, exhibits hydrophobicity, and accordingly acts as a polishing stopping layer. The slurry composition consists essentially of water, abrasive grains, and a polymer additive having both hydrophilic and hydrophobic functional groups.

2. 发明申请

US20070155178A1 Slurry for chemical mechanical polishing process and method of manufacturing semiconductor device using the same 审中-公开
标题翻译：用于化学机械抛光工艺的浆料及使用其制造半导体器件的方法
公开(公告)号：US20070155178A1
公开(公告)日：2007-07-05
申请号：US11712931
申请日：2007-03-01
申请人： Young-rae Park , Jung-yup Kim , Bo-un Yoon , Kwang-bok Kim , Jae-phill Boo , Jong-won Lee , Sang-rok Hah , Kyung-hyun Kim , Chang-ki Hong
发明人： Young-rae Park , Jung-yup Kim , Bo-un Yoon , Kwang-bok Kim , Jae-phill Boo , Jong-won Lee , Sang-rok Hah , Kyung-hyun Kim , Chang-ki Hong
IPC分类号： H01L21/306 , H01L21/461 , B44C1/22 , C23F1/00 , H01L21/302
CPC分类号： H01L21/76224 , B24B37/044 , C09G1/02 , H01L21/31053
摘要： A slurry composition useful for chemical mechanical polishing of the surface of a material layer, e.g., a silicon oxide layer, is disclosed. A first material surface which is exposed to the slurry exhibits hydrophilicity, while a second material layer, e.g., a polysilicon layer, the surface of which is also exposed to the slurry, exhibits hydrophobicity, and accordingly acts as a polishing stopping layer. The slurry composition consists essentially of water, abrasive grains, and a polymer additive having both hydrophilic and hydrophobic functional groups.
摘要翻译：公开了一种用于材料层表面例如氧化硅层的化学机械抛光的浆料组合物。暴露于浆料的第一材料表面显示出亲水性，而第二材料层，例如其表面也暴露于浆料的多晶硅层，表现出疏水性，因此用作抛光停止层。浆料组合物基本上由水，磨料颗粒和具有亲水和疏水官能团的聚合物添加剂组成。

3. 发明授权

US06548388B2 Semiconductor device including gate electrode having damascene structure and method of fabricating the same 失效
公开(公告)号：US06548388B2
公开(公告)日：2003-04-15
申请号：US09805213
申请日：2001-03-14
申请人： Hong-kyu Hwang , Young-Rae Park , Jung-yup Kim , Jeong-sic Jeon , Bo-un Yoon , Sang-rok Hah
发明人： Hong-kyu Hwang , Young-Rae Park , Jung-yup Kim , Jeong-sic Jeon , Bo-un Yoon , Sang-rok Hah
IPC分类号： H01L213205
CPC分类号： H01L21/76897 , H01L21/28123 , H01L21/76832 , H01L21/76834 , H01L21/76837 , H01L21/823437 , H01L21/823481
摘要： A gate electrode conductive layer is formed on an active region that is recessed relative to field oxide layers so as to define a damascene structure. The gate electrode conductive layer is formed on the active region but is not formed on a field region so that the thickness of an interlayer insulation layer deposited in a succeeding process is reduced, thereby reducing or preventing voids within the interlayer insulation layer. A polysilicon is formed on the bottom of the active region by selective epitaxial growth, thereby minimizing the influence of micro scratches, pits or stringers occurring on the bottom of the active region.

4. 发明授权

US06518157B2 Methods of planarizing insulating layers on regions having different etching rates 失效
公开(公告)号：US06518157B2
公开(公告)日：2003-02-11
申请号：US09917601
申请日：2001-07-27
申请人： Gee-won Nam , Gi-jong Park , Hong-kyu Hwang , Jun-shik Bae , Young-rae Park , Jung-yup Kim , Bo-un Yoon , Sang-rok Hah
发明人： Gee-won Nam , Gi-jong Park , Hong-kyu Hwang , Jun-shik Bae , Young-rae Park , Jung-yup Kim , Bo-un Yoon , Sang-rok Hah
IPC分类号： H01L2144
CPC分类号： H01L21/31056 , H01L21/31053 , H01L21/76819
摘要： An insulating layer can be formed on first and second adjacent regions of an integrated circuit having a first step difference therebetween, the first and second regions having first and second respective etch rates associated therewith. A recess can be formed in the insulating layer on the second region having a second step difference with the first region that is less than the first step difference to provide a portion of the insulating layer between the first and second adjacent regions having a third step difference with the first region that is greater than the second step difference. A width of the portion is selected based on a difference between the first and second etch rates.

5. 发明授权

US07196010B2 Slurry for chemical mechanical polishing process and method of manufacturing semiconductor device using the same 失效
公开(公告)号：US07196010B2
公开(公告)日：2007-03-27
申请号：US10639541
申请日：2003-08-12
申请人： Young-rae Park , Jung-yup Kim , Bo-un Yoon , Kwang-bok Kim , Jae-phil Boo , Jong-won Lee , Sang-rok Hah , Kyung-hyun Kim , Chang-ki Hong
发明人： Young-rae Park , Jung-yup Kim , Bo-un Yoon , Kwang-bok Kim , Jae-phil Boo , Jong-won Lee , Sang-rok Hah , Kyung-hyun Kim , Chang-ki Hong
IPC分类号： H01L21/302
CPC分类号： H01L21/76224 , B24B37/044 , C09G1/02 , H01L21/31053
摘要： A slurry composition useful for chemical mechanical polishing of the surface of a material layer, e.g., a silicon oxide layer, is disclosed. A first material surface which is exposed to the slurry exhibits hydrophilicity, while a second material layer, e.g., a polysilicon layer, the surface of which is also exposed to the slurry, exhibits hydrophobicity, and accordingly acts as a polishing stopping layer. The slurry composition consists essentially of water, abrasive grains, and a polymer additive having both hydrophilic and hydrophobic functional groups.

6. 发明授权

US06716732B2 Method for fabricating a contact pad of semiconductor device 有权
标题翻译：制造半导体器件接触焊盘的方法
公开(公告)号：US06716732B2
公开(公告)日：2004-04-06
申请号：US09986445
申请日：2001-11-08
申请人： Young-rae Park , Jung-yup Kim , Bo-un Yoon , Sang-rok Hah
发明人： Young-rae Park , Jung-yup Kim , Bo-un Yoon , Sang-rok Hah
IPC分类号： H01L213205
CPC分类号： H01L21/76897 , H01L21/76895
摘要： A method of fabricating a contact pad of a semiconductor device is disclosed. The method includes forming a stopping layer over the semiconductor substrate. An interdielectric layer is formed over the stopping layer, and the interdielectric layer is planarized to expose at least a gate upper dielectric layer by using a material which exhibits a high-polishing selectivity with respect to the interdielectric layer. The interdielectric layer is etched in a region in which a contact pad will be formed on the semiconductor substrate. A conductive material is deposited on the semiconductor substrate. Finally, planarizing is carried out using a material which exhibits a high-polishing selectivity of the upper dielectric layer with respect to the conductive material.
摘要翻译：公开了制造半导体器件的接触焊盘的方法。该方法包括在半导体衬底上形成阻挡层。在停止层上形成介电层，并且通过使用相对于介电层表现出高抛光选择性的材料，使介电层平坦化以至少暴露出栅极上电介质层。在其中将在半导体衬底上形成接触焊盘的区域中蚀刻介电层。导电材料沉积在半导体衬底上。最后，使用表现出相对于导电材料的上电介质层的高抛光选择性的材料进行平面化。

7. 发明授权

US06585570B2 Method and apparatus for supplying chemical-mechanical polishing slurries 有权
标题翻译：用于提供化学机械抛光浆料的方法和设备
公开(公告)号：US06585570B2
公开(公告)日：2003-07-01
申请号：US09848371
申请日：2001-05-03
申请人： Jung-yup Kim , Young-rae Park , Sang-rok Hah
发明人： Jung-yup Kim , Young-rae Park , Sang-rok Hah
IPC分类号： B24B1900
CPC分类号： B24B37/04 , B24B1/04 , B24B57/02
摘要： In method and apparatus for supplying a slurry for a chemical mechanical polishing (CMP) process, a slurry pre-treatment is provided for minimizing the size of abrasive particles in the slurry. In the slurry supplying method, after applying acoustic energy to the slurry to de-agglomerate agglomerated abrasive particles within the slurry, any remaining oversized abrasive particles having a diameter greater than a reference size are filtered out from the slurry. The acoustic energy application step and the filtering step are repeatedly performed for a predetermined time period while circulating the slurry. The slurry supplying apparatus includes a tank for holding a slurry, acoustic energy sources for applying acoustic energy to the slurry held within the tank, a slurry circulating line for circulating the slurry drawn out of the tank, which is connected to the tank, a filter for filtering out abrasive particle clumps having a diameter greater than a reference size from the slurry, which is disposed in the slurry circulating line, and a slurry supplying line for supplying the slurry from the slurry circulating line to a CMP equipment.
摘要翻译：在用于供应用于化学机械抛光（CMP）工艺的浆料的方法和设备中，提供了浆料预处理以使浆料中磨料颗粒的尺寸最小化。在浆料供给方法中，在向浆料中施加声能以使浆料中的附聚磨料颗粒去聚集之前，将任何剩余的具有大于参考尺寸的直径的过大的磨料颗粒从浆料中过滤掉。声音能量施加步骤和过滤步骤在循环淤浆期间重复进行预定时间段。浆料供给装置包括用于保持浆料的罐，用于向保持在罐内的浆料提供声能的声能源，用于使从罐中抽出的浆料循环的浆料循环管线，其与罐连接，过滤器用于从布置在浆料循环管线中的浆料中过滤出具有大于参考尺寸的直径的磨料颗粒团，以及用于将浆料从淤浆循环管线供应到CMP设备的浆料供应管线。

8. 发明授权

US06498102B2 Method for planarizing a semiconductor device using ceria-based slurry 有权
标题翻译：使用二氧化铈基浆料平坦化半导体器件的方法
公开(公告)号：US06498102B2
公开(公告)日：2002-12-24
申请号：US09803741
申请日：2001-03-12
申请人： Jung-yup Kim , Young-rae Park , Sang-rok Hah
发明人： Jung-yup Kim , Young-rae Park , Sang-rok Hah
IPC分类号： H01L21302
CPC分类号： H01L21/31053
摘要： A chemical mechanical polishing (CMP) process employs a ceria-based slurry as an abrasive. In particular, a nitride pattern is formed over a semiconductor substrate, and an oxide layer is then formed over the semiconductor substrate and the nitride pattern. Next, a sacrificial insulation layer which is devoid of surface steps is formed over the oxide layer. The sacrificial insulation layer and the oxide layer are then polished by CMP using the ceria-based slurry and using the nitride pattern as a stopper.
摘要翻译：化学机械抛光（CMP）工艺采用二氧化铈基浆料作为研磨剂。特别地，在半导体衬底上形成氮化物图案，然后在半导体衬底和氮化物图案之上形成氧化物层。接下来，在氧化物层上形成没有表面台阶的牺牲绝缘层。然后通过CMP使用二氧化铈基浆料和使用氮化物图案作为塞子来抛光牺牲绝缘层和氧化物层。

9. 发明授权

US06855267B2 Chemical mechanical polishing slurry 有权
标题翻译：化学机械抛光浆
公开(公告)号：US06855267B2
公开(公告)日：2005-02-15
申请号：US10023948
申请日：2001-12-21
申请人： Jae-dong Lee , Bo-un Yoon , Sang-rok Hah
发明人： Jae-dong Lee , Bo-un Yoon , Sang-rok Hah
IPC分类号： B24B37/00 , C09C1/68 , C09G1/02 , C09K3/14 , H01L21/304 , H01L21/321 , C09K13/00 , C09K13/06 , H01L21/302
CPC分类号： C09G1/02 , H01L21/3212
摘要： A polishing slurry including an abrasive, deionized water, a pH controlling agent, and polyethylene imine, can control the removal rates of a silicon oxide layer and a silicon nitride layer which are simultaneously exposed during chemical mechanical polishing (CMP) of a conductive layer. A relative ratio of the removal rate of the silicon oxide layer to that of the silicon nitride layer can be controlled by controlling an amount of the choline derivative.
摘要翻译：包括研磨剂，去离子水，pH控制剂和聚乙烯亚胺的抛光浆料可以控制在导电层的化学机械抛光（CMP）期间同时暴露的氧化硅层和氮化硅层的去除速率。可以通过控制胆碱衍生物的量来控制氧化硅层与氮化硅层的去除速率的相对比例。

10. 发明授权

US06514862B2 Wafer polishing slurry and chemical mechanical polishing (CMP) method using the same 有权
标题翻译：晶圆抛光浆和化学机械抛光（CMP）方法使用相同
公开(公告)号：US06514862B2
公开(公告)日：2003-02-04
申请号：US09977239
申请日：2001-10-16
申请人： Jae-dong Lee , Jong-won Lee , Bo-un Yoon , Sang-rok Hah
发明人： Jae-dong Lee , Jong-won Lee , Bo-un Yoon , Sang-rok Hah
IPC分类号： H01L21302
CPC分类号： C09G1/02 , H01L21/31053
摘要： A chemical mechanical polishing slurry includes an additive of a quaternary ammonium compound having a form of {N—(R1R2R3R4)}+X−, in which R1, R2, R3, and R4 are radicals, and X− is an anion derivative including halogen elements. Preferably, the quaternary ammonium compound is one of [(CH3)3NCH2CH2OH]Cl, [(CH3)3NCH2CH2OH]l, [(CH3)3NCH2CH2OH]Br, [(CH3)3NCH2CH2OH]CO3, and mixtures thereof. The slurry may further include a pH control agent formed of a base such as KOH, NH4OH, and (CH3)4NOH, and an acid such as HCl, H2SO4, H3PO4, and HNO3. Also, the pH control agent can include [(CH3)3NCH2CH2OH]OH. The slurry may further include a surfactant such as cetyldimethyl ammonium bromide, cetyldimethyl ammonium bromide, polyethylene oxide, polyethylene alcohol or polyethylene glycol.
摘要翻译：化学机械抛光浆料包括具有{N-（R1R2R3R4）} + X-形式的季铵化合物的添加剂，其中R 1，R 2，R 3和R 4是自由基，X是包含卤素的阴离子衍生物元素。优选地，季铵化合物是[（CH 3）3 NHCH 2 CH 2 OH] Cl，[（CH 3）3 NHCH 2 CH 2 OH] 1，[（CH 3）3 NHCH 2 CH 2 OH] Br，[（CH 3）3 NHCH 2 CH 2 OH] CO 3及其混合物之一。该浆料还可以包括由碱如KOH，NH 4 OH和（CH 3）4 NOH形成的pH控制剂，以及酸如HCl，H 2 SO 4，H 3 PO 4和HNO 3。此外，pH控制剂可以包括[（CH 3）3 NHCH 2 OH] OH。浆料还可以包括表面活性剂如十六烷基二甲基溴化铵，鲸蜡基二甲基溴化铵，聚环氧乙烷，聚乙烯醇或聚乙二醇。

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