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1. 发明申请

US20090303779A1 Spin Torque Transfer MTJ Devices with High Thermal Stability and Low Write Currents 审中-公开
标题翻译：具有高热稳定性和低写入电流的自旋转矩传输MTJ器件
公开(公告)号：US20090303779A1
公开(公告)日：2009-12-10
申请号：US12133865
申请日：2008-06-05
申请人： Young-Shying Chen , Yung-Hung Wang , Yu-Jen Wang , Chun-Jung Lin
发明人： Young-Shying Chen , Yung-Hung Wang , Yu-Jen Wang , Chun-Jung Lin
IPC分类号： G11C11/02
CPC分类号： G11C11/161 , G11C11/1659
摘要： An integrated circuit structure includes a first fixed magnetic element; a second fixed magnetic element; and a composite free magnetic element between the first and the second fixed magnetic elements. The composite free magnetic element includes a first free layer and a second free layer.
摘要翻译：集成电路结构包括第一固定磁性元件; 第二固定磁性元件; 以及第一和第二固定磁性元件之间的复合自由磁性元件。复合自由磁性元件包括第一自由层和第二自由层。

2. 发明授权

US07683447B2 MRAM device with continuous MTJ tunnel layers 失效
标题翻译：具有连续MTJ隧道层的MRAM器件
公开(公告)号：US07683447B2
公开(公告)日：2010-03-23
申请号：US11854478
申请日：2007-09-12
申请人： Yu-Jen Wang , Young-Shying Chen , Ya-Chen Kao , Chun-Jung Lin
发明人： Yu-Jen Wang , Young-Shying Chen , Ya-Chen Kao , Chun-Jung Lin
IPC分类号： H01L29/92
CPC分类号： B82Y10/00 , G11C11/15 , H01L27/228
摘要： A method for fabricating a magnetoresistive random access memory (MRAM) device having a plurality of memory cells includes: forming a fixed magnetic layer having magnetic moments fixed in a predetermined direction; forming a tunnel layer over the fixed magnetic layer; forming a free magnetic layer, having magnetic moments aligned in a direction that is adjustable by applying an electromagnetic field, over the tunnel layer; forming a hard mask on the free magnetic layer partially covering the free magnetic layer; and unmagnetizing portions of the free magnetic layer uncovered by the hard mask for defining one or more magnetic tunnel junction (MTJ) units.
摘要翻译：一种制造具有多个存储单元的磁阻随机存取存储器（MRAM）器件的方法包括：形成具有固定在预定方向上的磁矩的固定磁性层; 在固定磁性层上形成隧道层; 在隧道层上形成具有通过施加电磁场可调整方向的磁矩的自由磁性层; 在部分覆盖自由磁性层的自由磁性层上形成硬掩模; 以及由硬掩模未覆盖的自由磁性层的非磁化部分，用于限定一个或多个磁性隧道结（MTJ）单元。

3. 发明申请

US20090065883A1 MRAM Device with Continuous MTJ Tunnel Layers 失效
标题翻译：具有连续MTJ隧道层的MRAM设备
公开(公告)号：US20090065883A1
公开(公告)日：2009-03-12
申请号：US11854478
申请日：2007-09-12
申请人： Yu-Jen Wang , Young-Shying Chen , Ya-Chen Kao , Chun-Jung Lin
发明人： Yu-Jen Wang , Young-Shying Chen , Ya-Chen Kao , Chun-Jung Lin
IPC分类号： H01L29/82 , H01L21/00
CPC分类号： B82Y10/00 , G11C11/15 , H01L27/228
摘要： A method for fabricating a magnetoresistive random access memory (MRAM) device having a plurality of memory cells includes: forming a fixed magnetic layer having magnetic moments fixed in a predetermined direction; forming a tunnel layer over the fixed magnetic layer; forming a free magnetic layer, having magnetic moments aligned in a direction that is adjustable by applying an electromagnetic field, over the tunnel layer; forming a hard mask on the free magnetic layer partially covering the free magnetic layer; and unmagnetizing portions of the free magnetic layer uncovered by the hard mask for defining one or more magnetic tunnel junction (MTJ) units.
摘要翻译：一种制造具有多个存储单元的磁阻随机存取存储器（MRAM）器件的方法包括：形成具有固定在预定方向上的磁矩的固定磁性层; 在固定磁性层上形成隧道层; 在隧道层上形成具有通过施加电磁场可调整方向的磁矩的自由磁性层; 在部分覆盖自由磁性层的自由磁性层上形成硬掩模; 以及由硬掩模未覆盖的自由磁性层的非磁化部分，用于限定一个或多个磁性隧道结（MTJ）单元。

4. 发明授权

US09645204B2 Magnetic field sensors and sensng circuits 有权
公开(公告)号：US09645204B2
公开(公告)日：2017-05-09
申请号：US13722715
申请日：2012-12-20
申请人： Young-Shying Chen , Cheng-Tyng Yen
发明人： Young-Shying Chen , Cheng-Tyng Yen
IPC分类号： G01R33/09
CPC分类号： G01R33/098 , G01R33/0017
摘要： A magnetic sensor for sensing an external magnetic field includes first and second electrodes and first and second magnetic tunneling junctions. The first and second electrodes are disposed over a substrate; and the first and second magnetic tunneling junctions are conductively disposed between the first and second electrodes and connected in parallel between the first and second electrodes. The first and second magnetic tunneling junctions are arranged along a first easy axis of the magnetic sensor. The first magnetic tunneling junction includes a first pinned magnetization and a first free magnetization, and the second magnetic tunneling junction includes a second pinned magnetization and a second free magnetization. The first free magnetization and the second free magnetization are arranged substantially in parallel to the first easy axis and in substantially opposite directions.

5. 发明申请

US20120068698A1 STRUCTURE OF TMR AND FABRICATION METHOD OF INTEGRATED 3-AXIS MAGNETIC FIELD SENSOR AND SENSING CIRCUIT 审中-公开
标题翻译：集成三轴磁场传感器和感应电路的TMR和制造方法的结构
公开(公告)号：US20120068698A1
公开(公告)日：2012-03-22
申请号：US13097083
申请日：2011-04-29
申请人： Young-Shying Chen , Cheng-Tyng Yen
发明人： Young-Shying Chen , Cheng-Tyng Yen
IPC分类号： G01R33/02 , H01L43/12 , H01L29/82
CPC分类号： G01R33/098 , H01L27/22
摘要： A structure of TMR includes two magnetic tunneling junction (MTJ) devices with the same pattern and same magnetic film stack on a same conducting bottom electrode and a parallel connection of conducting top electrode. Each MTJ device includes a pinned layer on the bottom electrode, having a pinned magnetization; a non-magnetic tunneling on the pinned layer; and a free layer on the tunneling layer, having a free magnetization. These two MTJ devices have a collinear of easy-axis and their pinned magnetizations all are parallel to a same pinned direction which has an angle of 45 degree to easy-axis; their free magnetizations initially are parallel to the easy-axis but directions are mutual anti-parallel by applying a current generated ampere field. The magnetic field sensing direction is perpendicular to the easy-axis on the substrate.
摘要翻译： TMR的结构包括在相同的导电底部电极上具有相同图案和相同磁性膜堆叠的两个磁性隧道结（MTJ）器件和导电顶部电极的并联连接。每个MTJ装置包括在底部电极上的固定层，具有钉扎磁化; 钉扎层上的非磁性隧道; 和隧道层上的自由层，具有自由磁化强度。这两个MTJ装置具有易轴共线，并且它们的钉扎磁化全部平行于与易轴成45度角的相同销钉方向; 它们的自由磁化最初平行于易轴，但通过施加电流产生的安培场，方向是相互反平行的。磁场感应方向垂直于衬底上的易轴。

6. 发明授权

US08816683B2 Magnetic field sensing methods and megnetic field sensing apparatuses using tunneling magneto-resistor devices 有权
标题翻译：使用隧道磁阻电阻器件的磁场感测方法和感知场感测装置
公开(公告)号：US08816683B2
公开(公告)日：2014-08-26
申请号：US13548440
申请日：2012-07-13
申请人： Ding-Yeong Wang , Young-Shying Chen , Keng-Ming Kuo
发明人： Ding-Yeong Wang , Young-Shying Chen , Keng-Ming Kuo
IPC分类号： G01R33/02
CPC分类号： G01R33/098
摘要： Magnetic field sensing method and apparatus of this disclosure uses two tunneling magneto-resistor (TMR) devices. Angles of the free magnetizations of the two TMR devices with respect to a fixed direction are set in a first to fourth period. In the first to fourth period, the two TMR devices act as a TMR sensing unit and a zero-field reference unit by turns, and each of the conductance difference between the sensing unit and the zero field reference unit is also obtained in each of the first to fourth period. Finally, the four conductance differences are summed up.
摘要翻译：本公开的磁场感测方法和装置使用两个隧道磁阻（TMR）装置。两个TMR器件相对于固定方向的自由磁化的角度在第一至第四周期中被设定。在第一至第四周期中，两个TMR器件依次用作TMR感测单元和零场参考单元，并且在每一个中都获得感测单元和零场基准单元之间的每个电导差第一至第四期。最后总结出四种电导差异。

7. 发明授权

US07397694B2 Magnetic memory arrays 有权
标题翻译：磁记忆阵列
公开(公告)号：US07397694B2
公开(公告)日：2008-07-08
申请号：US11339510
申请日：2006-01-26
申请人： Chi-Ming Chen , Chien-Chung Hung , Young-Shying Chen , Lien-Chang Wang
发明人： Chi-Ming Chen , Chien-Chung Hung , Young-Shying Chen , Lien-Chang Wang
IPC分类号： G11C11/00 , G11C7/02
CPC分类号： G11C11/15
摘要： A magnetic memory array. A first bit line provides a first writing magnetic field to a magnetic memory cell. A second bit line provides a second writing magnetic field to a reference magnetic memory cell. A word line provides a third writing magnetic field to the magnetic memory cell and a fourth writing magnetic field to the reference magnetic memory cell. The third writing magnetic field exceeds the fourth writing magnetic field.
摘要翻译：磁存储阵列。第一位线向磁存储单元提供第一写入磁场。第二位线向参考磁存储器单元提供第二写入磁场。字线向磁存储单元提供第三写入磁场，并向基准磁存储单元提供第四写入磁场。第三写入磁场超过第四写入磁场。

8. 发明申请

US20130161736A1 TRENCH METAL OXIDE SEMICONDUCTOR TRANSISTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：铁氧体氧化物半导体晶体管器件及其制造方法
公开(公告)号：US20130161736A1
公开(公告)日：2013-06-27
申请号：US13433272
申请日：2012-03-28
申请人： Chien-Chung Hung , Young-Shying Chen , Cheng-Tyng Yen , Chwan-Ying Lee
发明人： Chien-Chung Hung , Young-Shying Chen , Cheng-Tyng Yen , Chwan-Ying Lee
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L21/0475 , H01L29/66227 , H01L29/7827
摘要： A trench metal oxide semiconductor transistor device and a manufacturing method thereof are described. The trench metal oxide semiconductor transistor device includes a substrate of a first conductivity type, a drift region of the first conductivity type, a deep trench doped region of a second conductivity type, an epitaxial region of the second conductivity type, a trench gate, a gate insulating layer, a source region, a drain electrode and a source electrode. The drift region has at least one deep trench therein, and the deep trench doped region is disposed in the deep trench. The trench gate passes through the epitaxial region, and a distance between a bottom of the trench gate and a bottom of the deep trench doped region is 0.5˜3 um.
摘要翻译：描述了沟槽金属氧化物半导体晶体管器件及其制造方法。沟槽金属氧化物半导体晶体管器件包括第一导电类型的衬底，第一导电类型的漂移区，第二导电类型的深沟槽掺杂区，第二导电类型的外延区，沟槽栅，栅极绝缘层，源极区，漏极和源电极。漂移区域中具有至少一个深沟槽，并且深沟槽掺杂区域设置在深沟槽中。沟槽栅极通过外延区域，并且沟槽栅极的底部和深沟槽掺杂区域的底部之间的距离为0.5〜3um。

9. 发明申请

US20080003701A1 NON-VIA METHOD OF CONNECTING MAGNETOELECTRIC ELEMENTS WITH CONDUCTIVE LINE 审中-公开
标题翻译：电磁元件与导电线连接的非直流方法
公开(公告)号：US20080003701A1
公开(公告)日：2008-01-03
申请号：US11781163
申请日：2007-07-20
申请人： Young-Shying Chen , Wei-Chuan Chen , Ming-Jer Kao
发明人： Young-Shying Chen , Wei-Chuan Chen , Ming-Jer Kao
IPC分类号： H01L21/4763 , H01L21/00
CPC分类号： H01L43/12
摘要： A non-via method of connecting a magnetoelectric element with a conductive line is provided. A magnetoelectric element is formed on a substrate. Spacers are formed on side walls of the magnetoelectric element. A first dielectric layer is deposited over the substrate and the magnetoelectric element. The first dielectric layer is planarized to a level above the magnetoelectric element. A second dielectric layer is deposited over the first dielectric layer. The first and second dielectric layers are etched to form a trench, exposing an upper surface of the magnetoelectric element. A conductive material layer is filled into the trench to form a conductive line on the magnetoelectric element.
摘要翻译：提供了一种连接磁电元件与导线的非通孔方法。在基板上形成有一个磁电元件。间隔物形成在磁电元件的侧壁上。第一电介质层沉积在衬底和磁电元件上。第一介电层被平坦化到高于磁电元件的水平。在第一介电层上沉积第二介电层。蚀刻第一和第二电介质层以形成沟槽，暴露磁电元件的上表面。将导电材料层填充到沟槽中以在磁电元件上形成导电线。

10. 发明申请

US20060039189A1 Magnetic random access memory with tape read line, fabricating method and circuit thereof 审中-公开
标题翻译：具有磁带读取线的磁性随机存取存储器，其制造方法和电路
公开(公告)号：US20060039189A1
公开(公告)日：2006-02-23
申请号：US11033169
申请日：2005-01-12
申请人： Young-Shying Chen , Ming-Jer Kao , Lien-Chang Wang , Chien-Chung Hung , Chi-Ming Chen
发明人： Young-Shying Chen , Ming-Jer Kao , Lien-Chang Wang , Chien-Chung Hung , Chi-Ming Chen
IPC分类号： G11C11/00 , G11C5/06
CPC分类号： G11C11/16
摘要： A magnetic random access memory with tape read line, fabricating method and circuit thereof is provided. The memory is composed of a top write line, a bottom write line which is vertical to the top write line, a MTJ formed on the bottom write line, a spacer formed around the MTJ, and a tape read line formed on the MTJ. The fabricating steps involves forming a bottom write line, forming a MTJ on the bottom write, and forming a tape read line on the MTJ sequentially. In the circuit, the tape read line is either parallel to or vertical to the top write line.
摘要翻译：提供具有磁带读取线的磁性随机存取存储器，其制造方法和电路。存储器由顶部写入线，垂直于顶部写入线的底部写入线，形成在底部写入线上的MTJ，形成在MTJ周围的间隔件和形成在MTJ上的磁带读取线组成。制造步骤包括形成底部写入线，在底部写入上形成MTJ，并且依次在MTJ上形成带读取线。在电路中，磁带读取线与顶部写入线并行或垂直。

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