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1. 发明申请

US20050003318A1 Orthodontic appliance by using a shape memory polymer 审中-公开
标题翻译：正畸器具采用形状记忆聚合物
公开(公告)号：US20050003318A1
公开(公告)日：2005-01-06
申请号：US10482449
申请日：2002-06-28
申请人： Young-Kyu Choi , Ki-Tae Kim
发明人： Young-Kyu Choi , Ki-Tae Kim
IPC分类号： A61C7/32 , A61C7/00 , A61C7/08 , A61C3/00
CPC分类号： A61C7/00 , A61C7/08 , A61C2201/007
摘要： Disclosed is an orthodontic appliance for straightening misaligned teeth. The orthodontic appliance is made of a shape memory polymer, and is formed in a cap-shaped tray capable of covering the maxillary or mandibular teeth. An original shape of the tray-type orthodontic appliance made of the shape memory polymer is identical to that of perfectly aligned teeth obtained after orthodontic treatment, and a temporarily formed shape of the tray-type orthodontic appliance is identical to that of the teeth alignment of a patient before orthodontic treatment. The tray-type orthodontic appliance is restored to the original shape memorized at a temperature above a specified glass transition temperature. The orthodontic appliance can be easily manufactured to perform orthodontic treatment, also providing appealing esthetics, in which the orthodontic appliance can be colored to be identical to a tooth with inexpensive manufacturing cost.
摘要翻译：公开了用于矫正不对准牙齿的矫正矫正器具。正畸器具由形状记忆聚合物制成，并形成为能够覆盖上颌或下颌牙齿的帽状托盘。由形状记忆聚合物制成的托盘型正畸装置的原始形状与正畸治疗后获得的完全排列的牙齿相同，并且托盘型正畸矫治器的暂时形成形状与牙齿矫正器正畸治疗前的病人。托盘型正畸器具恢复到在高于指定玻璃化转变温度的温度下记忆的原始形状。正畸矫治器可以容易地制造以进行正畸治疗，还提供吸引人的美学，其中正畸器具可以着色成与牙齿相同，制造成本低廉。

2. 发明申请

US20140015108A1 METHOD OF MANUFACTURING SINGLE CRYSTAL INGOT, AND SINGLE CRYSTAL INGOT AND WAFER MANUFACTURED THEREBY 审中-公开
标题翻译：制造单晶的方法和单晶及其制造方法
公开(公告)号：US20140015108A1
公开(公告)日：2014-01-16
申请号：US13821007
申请日：2012-03-20
申请人： Sang-Hee Kim , Jung-Ha Hwang , Young-Kyu Choi , Bok-Cheol Sim
发明人： Sang-Hee Kim , Jung-Ha Hwang , Young-Kyu Choi , Bok-Cheol Sim
IPC分类号： H01L29/36 , H01L21/02
CPC分类号： H01L29/36 , C30B15/20 , C30B29/06 , H01L21/02002
摘要： A method of manufacturing a single crystal ingot, and a single crystal ingot and a wafer manufactured thereby are provided. The method of manufacturing a single crystal ingot according to an embodiment includes forming a silicon melt in a crucible inside a chamber, preparing a seed crystal on the silicon melt, and growing a single crystal ingot from the silicon melt, and pressure of the chamber may be controlled in a range of 90 Torr to 500 Torr.
摘要翻译：提供了制造单晶锭的方法，以及由此制造的单晶锭和晶片。根据实施例的制造单晶锭的方法包括在室内的坩埚中形成硅熔体，在硅熔体上制备晶种，并从硅熔体生长单晶锭，并且室的压力可以控制在90乇至500乇的范围内。

3. 发明申请

US20120141808A1 2-DIMENSIONAL LINE-DEFECTS CONTROLLED SILICON INGOT, WAFER AND EPITAXIAL WAFER, AND MANUFACTURING PROCESS AND APPARATUS THEREFOR 审中-公开
标题翻译：二维线缺陷控制硅芯，波形和外延波形及其制造工艺及其设备
公开(公告)号：US20120141808A1
公开(公告)日：2012-06-07
申请号：US13328158
申请日：2011-12-16
申请人： Do-Won Song , Young-Hun Kim , Eun-Sang Ji , Young-Kyu Choi , Hwa-Jin Jo
发明人： Do-Won Song , Young-Hun Kim , Eun-Sang Ji , Young-Kyu Choi , Hwa-Jin Jo
IPC分类号： C01B33/02 , B32B9/04 , B28D5/00 , C30B15/22
CPC分类号： C30B15/305 , C30B29/06 , C30B30/04 , C30B35/00 , Y10T117/10 , Y10T117/1024 , Y10T117/1068
摘要： The present invention reports a defect that has not been reported, and discloses a defect-controlled silicon ingot, a defect-controlled wafer, and a process and apparatus for manufacturing the same. The new defect is a crystal defect generated when a screw dislocation caused by a HMCZ (Horizontal Magnetic Czochralski) method applying a strong horizontal magnetic field develops into a jogged screw dislocation and propagates to form a cross slip during thermal process wherein a crystal is cooled. The present invention changes the shape and structure of an upper heat shield structure arranged between a heater and an ingot above a silicon melt, and controls initial conditions or operation conditions of a silicon single crystalline ingot growth process to reduce a screw dislocation caused by a strong horizontal magnetic field and prevent the screw dislocation from propagating into a cross slip.
摘要翻译：本发明报道了未报道的缺陷，并公开了缺陷控制硅锭，缺陷控制晶片及其制造方法和装置。新的缺陷是当由施加强水平磁场的HMCZ（Horizontal Magnetic Czochralski）方法引起的螺旋位错产生于慢跑螺钉位错时产生的晶体缺陷，并且在冷却晶体的热处理期间传播以形成交叉滑移。本发明改变了布置在硅熔体上方的加热器和锭之间的上部隔热结构的形状和结构，并且控制了硅单晶锭生长过程的初始条件或操作条件以减少由强的水平磁场，防止螺丝错位传播到十字滑移。

4. 发明授权

US08194635B2 Apparatus and method for uplink scheduling considering characteristic of power amplifier in mobile communication terminal 有权
标题翻译：考虑移动通信终端中功率放大器的特性的上行链路调度的装置和方法
公开(公告)号：US08194635B2
公开(公告)日：2012-06-05
申请号：US12148964
申请日：2008-04-23
申请人： Sunghyun Choi , Kwang-Hun Han , Young-Kyu Choi , Yong-Hwan Lee
发明人： Sunghyun Choi , Kwang-Hun Han , Young-Kyu Choi , Yong-Hwan Lee
IPC分类号： H04J3/00
CPC分类号： H04W72/1268 , H04W52/146 , H04W52/228
摘要： An UpLink (UL) scheduling method and apparatus considering a characteristic of a power amplifier in a mobile communication terminal are provided. The UL scheduling method includes calculating a packet transmission time, which minimizes energy consumed in packet transmission, by using a Direct Current (DC) voltage used in a power amplifier for signal amplification and by using nonlinear amplification efficiency; and scheduling UL data by using the calculated packet transmission time.
摘要翻译：提供了考虑移动通信终端中的功率放大器的特性的UpLink（UL）调度方法和装置。 UL调度方法包括通过使用用于信号放大的功率放大器中使用的直流（DC）电压和通过使用非线性放大效率来计算分组传输中消耗的能量最小化的分组传输时间; 并通过使用所计算的分组传输时间调度UL数据。

5. 发明授权

US08391868B2 Apparatus and method for updating neighbor list in a mobile communication system 有权
公开(公告)号：US08391868B2
公开(公告)日：2013-03-05
申请号：US12386783
申请日：2009-04-23
申请人： Ki-Young Han , In-Seok Hwang , Byoung-Ha Yi , Sung-Hyun Choi , Young-Kyu Choi , Kwang-Hoon Han , Min-Soo Na , Dong-Myung Kim
发明人： Ki-Young Han , In-Seok Hwang , Byoung-Ha Yi , Sung-Hyun Choi , Young-Kyu Choi , Kwang-Hoon Han , Min-Soo Na , Dong-Myung Kim
IPC分类号： H04W36/00
CPC分类号： H04W36/0061
摘要： An apparatus and method for updating a neighbor list in a mobile communication system are provided. The system includes a Mobile Station (MS), a second Base Station (BS), and a first BS. The MS stores first log information, performs a network entry process with the second BS, and generates and transmits second log information to the second BS. The second BS allocates a bandwidth to the MS, receives the second log information, determines if neighbor list update is required using the second log information and, if the neighbor list update is required, updates a neighbor list and transmits the updated neighbor list information to the previous BS.

6. 发明授权

US08349075B2 2-dimensional line-defects controlled silicon ingot, wafer and epitaxial wafer, and manufacturing process and apparatus therefor 有权
标题翻译：二维线缺陷控制硅锭，晶圆和外延晶片及其制造工艺和设备
公开(公告)号：US08349075B2
公开(公告)日：2013-01-08
申请号：US13328132
申请日：2011-12-16
申请人： Do-Won Song , Young-Hun Kim , Eun-Sang Ji , Young-Kyu Choi , Hwa-Jin Jo
发明人： Do-Won Song , Young-Hun Kim , Eun-Sang Ji , Young-Kyu Choi , Hwa-Jin Jo
IPC分类号： C30B15/14 , C30B11/00 , C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04 , C30B35/00
CPC分类号： C30B15/305 , C30B29/06 , C30B30/04 , C30B35/00 , Y10T117/10 , Y10T117/1024 , Y10T117/1068
摘要： The present invention reports a defect that has not been reported, and discloses a defect-controlled silicon ingot, a defect-controlled wafer, and a process and apparatus for manufacturing the same. The new defect is a crystal defect generated when a screw dislocation caused by a HMCZ (Horizontal Magnetic Czochralski) method applying a strong horizontal magnetic field develops into a jogged screw dislocation and propagates to form a cross slip during thermal process wherein a crystal is cooled. The present invention changes the shape and structure of an upper heat shield structure arranged between a heater and an ingot above a silicon melt, and controls initial conditions or operation conditions of a silicon single crystalline ingot growth process to reduce a screw dislocation caused by a strong horizontal magnetic field and prevent the screw dislocation from propagating into a cross slip.
摘要翻译：本发明报道了未报道的缺陷，并公开了缺陷控制硅锭，缺陷控制晶片及其制造方法和装置。新的缺陷是当由施加强水平磁场的HMCZ（Horizontal Magnetic Czochralski）方法引起的螺旋位错产生于慢跑螺钉位错时产生的晶体缺陷，并且在冷却晶体的热处理期间传播以形成交叉滑移。本发明改变了布置在硅熔体上方的加热器和锭之间的上部隔热结构的形状和结构，并且控制了硅单晶锭生长过程的初始条件或操作条件以减少由强的水平磁场，防止螺丝错位传播到十字滑移。

7. 发明授权

US08114215B2 2-dimensional line-defects controlled silicon ingot, wafer and epitaxial wafer, and manufacturing process and apparatus therefor 有权
标题翻译：二维线缺陷控制硅锭，晶圆和外延晶片及其制造工艺和设备
公开(公告)号：US08114215B2
公开(公告)日：2012-02-14
申请号：US12256663
申请日：2008-10-23
申请人： Do-Won Song , Young-Hun Kim , Eun-Sang Ji , Young-Kyu Choi , Hwa-Jin Jo
发明人： Do-Won Song , Young-Hun Kim , Eun-Sang Ji , Young-Kyu Choi , Hwa-Jin Jo
IPC分类号： C30B15/14 , C30B11/00 , C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04 , C30B35/00
CPC分类号： C30B15/305 , C30B29/06 , C30B30/04 , C30B35/00 , Y10T117/10 , Y10T117/1024 , Y10T117/1068
摘要： The present invention reports a defect that has not been reported, and discloses a defect-controlled silicon ingot, a defect-controlled wafer, and a process and apparatus for manufacturing the same. The new defect is a crystal defect generated when a screw dislocation caused by a HMCZ (Horizontal Magnetic Czochralski) method applying a strong horizontal magnetic field develops into a jogged screw dislocation and propagates to form a cross slip during thermal process wherein a crystal is cooled. The present invention changes the shape and structure of an upper heat shield structure arranged between a heater and an ingot above a silicon melt, and controls initial conditions or operation conditions of a silicon single crystalline ingot growth process to reduce a screw dislocation caused by a strong horizontal magnetic field and prevent the screw dislocation from propagating into a cross slip.
摘要翻译：本发明报道了未报道的缺陷，并公开了缺陷控制硅锭，缺陷控制晶片及其制造方法和装置。新的缺陷是当由施加强水平磁场的HMCZ（Horizontal Magnetic Czochralski）方法引起的螺旋位错产生于慢跑螺钉位错时产生的晶体缺陷，并且在冷却晶体的热处理期间传播以形成交叉滑移。本发明改变了布置在硅熔体上方的加热器和锭之间的上部隔热结构的形状和结构，并且控制了硅单晶锭生长过程的初始条件或操作条件以减少由强的水平磁场，防止螺丝错位传播到十字滑移。

8. 发明申请

US20090169460A1 2-DIMENSIONAL LINE-DEFECTS CONTROLLED SILICON INGOT, WAFER AND EPITAXIAL WAFER, AND MANUFACTURING PROCESS AND APPARATUS THEREFOR 有权
标题翻译：二维线缺陷控制硅芯，波形和外延波形及其制造工艺及其设备
公开(公告)号：US20090169460A1
公开(公告)日：2009-07-02
申请号：US12256663
申请日：2008-10-23
申请人： Do-Won Song , Young-Hun Kim , Eun-Sang Ji , Young-Kyu Choi , Hwa-Jin Jo
发明人： Do-Won Song , Young-Hun Kim , Eun-Sang Ji , Young-Kyu Choi , Hwa-Jin Jo
IPC分类号： C30B15/06 , C01B33/02
CPC分类号： C30B15/305 , C30B29/06 , C30B30/04 , C30B35/00 , Y10T117/10 , Y10T117/1024 , Y10T117/1068
摘要： The present invention reports a defect that has not been reported, and discloses a defect-controlled silicon ingot, a defect-controlled wafer, and a process and apparatus for manufacturing the same. The new defect is a crystal defect generated when a screw dislocation caused by a HMCZ (Horizontal Magnetic Czochralski) method applying a strong horizontal magnetic field develops into a jogged screw dislocation and propagates to form a cross slip during thermal process wherein a crystal is cooled. The present invention changes the shape and structure of an upper heat shield structure arranged between a heater and an ingot above a silicon melt, and controls initial conditions or operation conditions of a silicon single crystalline ingot growth process to reduce a screw dislocation caused by a strong horizontal magnetic field and prevent the screw dislocation from propagating into a cross slip.
摘要翻译：本发明报道了未报道的缺陷，并公开了缺陷控制硅锭，缺陷控制晶片及其制造方法和装置。新的缺陷是当由施加强水平磁场的HMCZ（Horizontal Magnetic Czochralski）方法引起的螺旋位错产生于慢跑螺钉位错时产生的晶体缺陷，并且在冷却晶体的热处理期间传播以形成交叉滑移。本发明改变了布置在硅熔体上方的加热器和锭之间的上部隔热结构的形状和结构，并且控制了硅单晶锭生长过程的初始条件或操作条件以减少由强的水平磁场，防止螺丝错位传播到十字滑移。

9. 发明授权

US08503395B2 Apparatus and method for transmitting load indicator in a broadband wireless communication system 有权
标题翻译：用于在宽带无线通信系统中传输负载指示符的装置和方法
公开(公告)号：US08503395B2
公开(公告)日：2013-08-06
申请号：US12753483
申请日：2010-04-02
申请人： Sung-Hyun Choi , Young-Kyu Choi , Byoung-Gi Jang , Ki-Young Han , Byoung-Ha Yi
发明人： Sung-Hyun Choi , Young-Kyu Choi , Byoung-Gi Jang , Ki-Young Han , Byoung-Ha Yi
IPC分类号： H04W4/00
CPC分类号： H04L43/0894 , H04L43/0882 , H04W12/00 , H04W28/08 , H04W36/22 , H04W48/08 , H04W48/20 , H04W72/00 , H04W72/04
摘要： A method and apparatus for providing load state information of a Base Station (BS) in a broadband wireless communication system are provided. The method includes determining a ratio of a whole allocated resource compared to a whole resource of the BS and a ratio of a resource allocated for a rate requiring security compared to the whole resource, generating at least one load indicator for indicating a first value expressing the ratio of the whole allocated resource and a second value expressing the ratio of the resource allocated for the rate requiring security, and transmitting the at least one load indicator.
摘要翻译：提供了一种用于在宽带无线通信系统中提供基站（BS）的负载状态信息的方法和装置。该方法包括确定与BS的整个资源相比的整个分配的资源的比率以及为与整个资源相比需要安全性的速率所分配的资源的比率，生成用于指示表示所述资源的第一值的至少一个负载指示符整个分配的资源的比率和表示为需要安全性的速率分配的资源的比率的第二值，并且发送至少一个负载指示符。

10. 发明申请

US20120132131A1 2-DIMENSIONAL LINE-DEFECTS CONTROLLED SILICON INGOT, WAFER AND EPITAXIAL WAFER, AND MANUFACTURING PROCESS AND APPARATUS THEREFOR 有权
公开(公告)号：US20120132131A1
公开(公告)日：2012-05-31
申请号：US13328132
申请日：2011-12-16
申请人： Do-Won Song , Young-Hun Kim , Eun-Sang Ji , Young-Kyu Choi , Hwa-Jin Jo
发明人： Do-Won Song , Young-Hun Kim , Eun-Sang Ji , Young-Kyu Choi , Hwa-Jin Jo
IPC分类号： C30B15/22
CPC分类号： C30B15/305 , C30B29/06 , C30B30/04 , C30B35/00 , Y10T117/10 , Y10T117/1024 , Y10T117/1068
摘要： The present invention reports a defect that has not been reported, and discloses a defect-controlled silicon ingot, a defect-controlled wafer, and a process and apparatus for manufacturing the same. The new defect is a crystal defect generated when a screw dislocation caused by a HMCZ (Horizontal Magnetic Czochralski) method applying a strong horizontal magnetic field develops into a jogged screw dislocation and propagates to form a cross slip during thermal process wherein a crystal is cooled. The present invention changes the shape and structure of an upper heat shield structure arranged between a heater and an ingot above a silicon melt, and controls initial conditions or operation conditions of a silicon single crystalline ingot growth process to reduce a screw dislocation caused by a strong horizontal magnetic field and prevent the screw dislocation from propagating into a cross slip.

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