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    • 10. 发明申请
    • IMAGE SENSOR
    • 图像传感器
    • US20080122021A1
    • 2008-05-29
    • US11869525
    • 2007-10-09
    • Jin-Ho Park
    • Jin-Ho Park
    • H01L31/0232H01L31/18
    • H01L27/14685H01L27/14627H01L31/02327
    • Embodiments relate to an image sensor and a method of manufacturing the same. In embodiments, an image sensor may include a photodiode structure having a plurality of pixels, aligned on a semiconductor substrate, an inorganic micro-lens group including an inorganic substance, aligned at positions corresponding to a first pixel group in the pixels on the photodiode structure, and an organic micro-lens group including an organic substance, aligned at positions corresponding to a second pixel group except for the inorganic micro-lens group in the pixels on the photodiode structure. In embodiments, the micro-lenses are formed such that there are no gaps between adjacent micro-lenses.
    • 实施例涉及图像传感器及其制造方法。 在实施例中,图像传感器可以包括具有在半导体衬底上对准的多个像素的光电二极管结构,包括无机物质的无机微透镜组,其对应于光电二极管结构上的像素中的第一像素组的位置 以及包含有机物的有机微透镜组,在与光电二极管结构的像素中的无机微透镜组以外的第二像素组对应的位置处排列。 在实施例中,微透镜被形成为使得相邻微透镜之间没有间隙。