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1. 发明申请

US20140011048A1 FILM FORMATION COMPOSITION FOR PREVENTING BLACKENING OF STEEL SHEET, AND STEEL SHEET HAVING FILM FORMED BY COMPOSITION 有权
标题翻译：用于防止钢板松弛的薄膜形成组合物和具有由组合物形成的薄膜的钢板
公开(公告)号：US20140011048A1
公开(公告)日：2014-01-09
申请号：US14005567
申请日：2012-03-28
申请人： Young-Jin Kwak , Dong-Yun Kim , Woo-Sung Jung , Kyung-Hoon Nam , Dong-Yoeul Lee , Seok-Jun Hong , Tae-Yeob Kim , Yong-Hwa Jung , Mun-Jong Eom , Myoung-Hee Choi , Gab-Yong Kim , Sang-Hoon Park , Sang-Cheol Lee , Yang-Woo Nam
发明人： Young-Jin Kwak , Dong-Yun Kim , Woo-Sung Jung , Kyung-Hoon Nam , Dong-Yoeul Lee , Seok-Jun Hong , Tae-Yeob Kim , Yong-Hwa Jung , Mun-Jong Eom , Myoung-Hee Choi , Gab-Yong Kim , Sang-Hoon Park , Sang-Cheol Lee , Yang-Woo Nam
IPC分类号： C09D5/08
CPC分类号： C09D5/08 , C08G2650/56 , C08K3/08 , C08K3/16 , C09D7/61 , C09D171/00 , C23C26/00 , C23C30/00 , Y10T428/12569
摘要： Provided is a film formation composition for improving the blackening of the surface of a steel sheet, particularly, the surface of a steel sheet containing Mg on the surface thereof, such as a Mg sheet, a plated steel sheet having a plated layer comprising Mg, and the like, a steel sheet comprising a film formed by the composition, and a method for forming the film. Provided are a film formation composition for preventing the blackening of the surface of the steel sheet, comprising: 2.5-7.5 parts by weight of a water-soluble phenoxy resin; 0.1-0.5 parts by weight of a fluorometal acid; 0.1-0.5 parts by weight of a metal compound; and 1-5 parts by weight of a cross-linking agent.
摘要翻译：本发明提供一种用于改善钢板表面的黑化的成膜组合物，特别是其表面上含有Mg的钢板的表面如Mg片，具有包含Mg的镀层的镀覆钢板，包括通过该组合物形成的膜的钢板和形成该膜的方法。提供一种用于防止钢板表面变黑的成膜组合物，其包含：2.5-7.5重量份的水溶性苯氧基树脂; 0.1-0.5重量份的氟金酸; 0.1-0.5重量份的金属化合物; 和1-5重量份的交联剂。

2. 发明授权

US09296903B2 Film formation composition for preventing blackening of steel sheet, and steel sheet having film formed by composition 有权
标题翻译：用于防止钢板黑化的成膜组合物和具有由组合物形成的膜的钢板
公开(公告)号：US09296903B2
公开(公告)日：2016-03-29
申请号：US14005567
申请日：2012-03-28
申请人： Young-Jin Kwak , Dong-Yun Kim , Woo-Sung Jung , Kyung-Hoon Nam , Dong-Yoeul Lee , Seok-Jun Hong , Tae-Yeob Kim , Yong-Hwa Jung , Mun-Jong Eom , Myoung-Hee Choi , Gab-Yong Kim , Sang-Hoon Park , Sang-Cheol Lee , Yang-Woo Nam
发明人： Young-Jin Kwak , Dong-Yun Kim , Woo-Sung Jung , Kyung-Hoon Nam , Dong-Yoeul Lee , Seok-Jun Hong , Tae-Yeob Kim , Yong-Hwa Jung , Mun-Jong Eom , Myoung-Hee Choi , Gab-Yong Kim , Sang-Hoon Park , Sang-Cheol Lee , Yang-Woo Nam
IPC分类号： B32B15/092 , C09D5/08 , C09D7/12 , C23C26/00 , C23C30/00 , C09D171/00 , C08K3/08 , C08K3/16
CPC分类号： C09D5/08 , C08G2650/56 , C08K3/08 , C08K3/16 , C09D7/61 , C09D171/00 , C23C26/00 , C23C30/00 , Y10T428/12569
摘要： Provided is a film formation composition for improving the blackening of the surface of a steel sheet, particularly, the surface of a steel sheet containing Mg on the surface thereof, such as a Mg sheet, a plated steel sheet having a plated layer comprising Mg, and the like, a steel sheet comprising a film formed by the composition, and a method for forming the film. Provided are a film formation composition for preventing the blackening of the surface of the steel sheet, comprising: 2.5-7.5 parts by weight of a water-soluble phenoxy resin; 0.1-0.5 parts by weight of a fluorometal acid; 0.1-0.5 parts by weight of a metal compound; and 1-5 parts by weight of a cross-linking agent.
摘要翻译：本发明提供一种用于改善钢板表面的黑化的成膜组合物，特别是其表面上含有Mg的钢板的表面，例如Mg片，具有包含Mg的镀层的镀覆钢板，包括通过该组合物形成的膜的钢板和形成该膜的方法。提供一种用于防止钢板表面变黑的成膜组合物，其包含：2.5-7.5重量份的水溶性苯氧基树脂; 0.1-0.5重量份的氟金酸; 0.1-0.5重量份的金属化合物; 和1-5重量份的交联剂。

3. 发明授权

US06613683B2 Method of manufacturing a contact hole of a semiconductor device 有权
公开(公告)号：US06613683B2
公开(公告)日：2003-09-02
申请号：US09915520
申请日：2001-07-27
申请人： Young Hwangbo , Dong-Yun Kim , Hyuck-Jun Lee
发明人： Young Hwangbo , Dong-Yun Kim , Hyuck-Jun Lee
IPC分类号： H01L21302
CPC分类号： H01L21/76897 , H01L21/31116 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： A spacer is formed on a side wall of a gate electrode formed over a substrate, and a dielectric interlayer is then formed over the substrate, the gate electrode and the spacer. A region of the dielectric interlayer is then subjected to a first etching process using an etching gas. An emission amount of a chemical compound emitted during the first etching process is detected, where the chemical compound is produced by a chemical reaction of the etching gas and the spacer. The region of the dielectric interlayer is then subjected to a second etching process upon detecting that the emission amount of the chemical compound has reached a given level. The second etching process may be continued until a contact hole is defined in the dielectric interlayer.

4. 发明授权

US08689163B2 Semiconductor apparatus capable of error revision using pin extension technique and design method therefor 有权
标题翻译：能够使用引脚扩展技术进行错误修正的半导体装置及其设计方法
公开(公告)号：US08689163B2
公开(公告)日：2014-04-01
申请号：US12928021
申请日：2010-12-01
申请人： Dong-Yun Kim , Dong-Hoon Yeo , Hyun-Chul Shin , Kyung-Ho Kim , Byung-Tae Kang , Ju-Yong Shin , Sung-Chul Lee
发明人： Dong-Yun Kim , Dong-Hoon Yeo , Hyun-Chul Shin , Kyung-Ho Kim , Byung-Tae Kang , Ju-Yong Shin , Sung-Chul Lee
IPC分类号： G06F17/50
CPC分类号： H01L23/525 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor apparatus and a design method for the semiconductor apparatus allow debugging or repairs by using a spare cell. The semiconductor apparatus includes a plurality of metal layers. At least one repair block performs a predetermined function. A spare block is capable of substituting for a function of the repair block. And at least one of the plurality of metal layers is predetermined to be a repair layer for error revision. At least one pin of the repair block is connected to the repair layer through a first pin extension, and at least one pin of the spare block is capable of extending to the repair layer. When the repair block is to be repaired, the pin extension of the repair layer and the repair block is disconnected, and at least one pin of the spare block is connected to the repair layer through a second pin extension.
摘要翻译：半导体装置的半导体装置和设计方法允许使用备用单元进行调试或维修。半导体装置包括多个金属层。至少一个修理块执行预定的功能。备用块能够代替维修块的功能。并且多个金属层中的至少一个被预先确定为用于错误修正的修复层。修复块的至少一个销通过第一销延伸连接到修复层，并且备用块的至少一个引脚能够延伸到修复层。当修理修理块时，修理层和维修块的销延伸被断开，备用块的至少一个引脚通过第二个引脚延伸连接到修复层。

5. 发明申请

US20110140280A1 Semiconductor apparatus capable of error revision using pin extension technique and design method therefor 有权
标题翻译：能够使用引脚扩展技术进行错误修正的半导体装置及其设计方法
公开(公告)号：US20110140280A1
公开(公告)日：2011-06-16
申请号：US12928021
申请日：2010-12-01
申请人： Dong-Yun Kim , Dong-Hoon Yeo , Hyun-Chul Shin , Kyung-Ho Kim , Byung-Tae Kang , Ju-Yong Shin , Sung-Chul Lee
发明人： Dong-Yun Kim , Dong-Hoon Yeo , Hyun-Chul Shin , Kyung-Ho Kim , Byung-Tae Kang , Ju-Yong Shin , Sung-Chul Lee
IPC分类号： H01L23/48 , G06F17/50
CPC分类号： H01L23/525 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor apparatus and a design method for the semiconductor apparatus allow debugging or repairs by using a spare cell. The semiconductor apparatus includes a plurality of metal layers. At least one repair block performs a predetermined function. A spare block is capable of substituting for a function of the repair block. And at least one of the plurality of metal layers is predetermined to be a repair layer for error revision. At least one pin of the repair block is connected to the repair layer through a first pin extension, and at least one pin of the spare block is capable of extending to the repair layer. When the repair block is to be repaired, the pin extension of the repair layer and the repair block is disconnected, and at least one pin of the spare block is connected to the repair layer through a second pin extension.
摘要翻译：半导体装置的半导体装置和设计方法允许使用备用单元进行调试或维修。半导体装置包括多个金属层。至少一个修理块执行预定的功能。备用块能够代替维修块的功能。并且多个金属层中的至少一个被预先确定为用于错误修正的修复层。修复块的至少一个销通过第一销延伸连接到修复层，并且备用块的至少一个引脚能够延伸到修复层。当修理修理块时，修理层和维修块的销延伸被断开，备用块的至少一个引脚通过第二个引脚延伸连接到修复层。

6. 发明申请

US20050121753A1 Low-power semiconductor chip with separated power ring, method for manufacturing the same, and method for controlling the same 审中-公开
标题翻译：具有分离电源环的低功率半导体芯片及其制造方法及其控制方法
公开(公告)号：US20050121753A1
公开(公告)日：2005-06-09
申请号：US11002316
申请日：2004-12-03
申请人： Jong-Rim Lee , June-Hyeok Im , Dong-Yun Kim
发明人： Jong-Rim Lee , June-Hyeok Im , Dong-Yun Kim
IPC分类号： H01L21/822 , G06F1/32 , H01L21/82 , H01L23/48 , H01L23/495 , H01L23/528 , H01L27/04
CPC分类号： G06F1/3203 , G06F1/3287 , H01L23/49531 , H01L24/48 , H01L24/49 , H01L2224/48091 , H01L2224/48237 , H01L2224/49171 , H01L2224/73265 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01082 , H01L2924/01083 , H01L2924/14 , H01L2924/1433 , H01L2924/181 , H01L2924/19107 , Y02D10/171 , H01L2224/45099 , H01L2224/05599 , H01L2924/00012
摘要： Disclosed is a semiconductor chip comprising power pads for receiving power, a plurality of pad groups grouped according to functions in such a manner that each pad group includes at least one input/output pad, separated power rings connected to each of pad groups and for delivering power supplied from the power pads to each of the pad groups, and a switch control unit for determining usage states for input/output pads of the pad groups and for performing on/off control with respect to each of the pad groups. The pad group comprises at least simultaneously-operating input/output pad, and is grouped in such a manner that the pad group includes at least two pads sharing power supplied from one power pad. A switch control unit determines a usage state for each of the pad groups and, as a result of the determination, turns off input/output pads of an idle pad group.
摘要翻译：公开了一种半导体芯片，其包括用于接收功率的电源焊盘，根据功能分组的多个焊盘组，每个焊盘组包括至少一个输入/输出焊盘，连接到每个焊盘组的分离的电源环，从电源焊盘提供给每个焊盘组的电力;以及开关控制单元，用于确定焊盘组的输入/输出焊盘的使用状态，并且用于对每个焊盘组执行开/关控制。焊盘组包括至少同时操作的输入/输出焊盘，并且被分组成使得焊盘组包括共享从一个电源焊盘提供的电力的至少两个焊盘。开关控制单元确定每个焊盘组的使用状态，并且作为确定的结果，关闭空闲焊盘组的输入/输出焊盘。

7. 发明授权

US6124216A Method of making intermetal dielectric layers having a low dielectric constant 有权
标题翻译：制造具有低介电常数的金属间电介质层的方法
公开(公告)号：US6124216A
公开(公告)日：2000-09-26
申请号：US393185
申请日：1999-09-10
申请人： Ho Ko , Tae-Ryong Kim , Chung-Howan Kim , Dong-Yun Kim , Jong-Heui Song
发明人： Ho Ko , Tae-Ryong Kim , Chung-Howan Kim , Dong-Yun Kim , Jong-Heui Song
IPC分类号： H01L21/28 , H01L21/312 , H01L21/768 , H01L23/48 , H01L29/52
CPC分类号： H01L21/02164 , H01L21/02134 , H01L21/02304 , H01L21/02337 , H01L21/0234 , H01L21/02348 , H01L21/02351 , H01L21/02362 , H01L21/3124 , H01L21/76801
摘要： A method of forming a low-k dielectric insulating layer includes forming the dielectric insulating layer and then removing hydrogen bonds in the dielectric insulating layer. The dielectric layer as formed is preferably a HSQ film which contains the structure Si--O--H. Hydrogen is removed from the dielectric layer by either: a heat treatment in plasma, an ozone reduction process, an ion implantation process, or electron beam bombardment.
摘要翻译：形成低k电介质绝缘层的方法包括形成介电绝缘层，然后除去介电绝缘层中的氢键。所形成的电介质层优选为含有Si-O-H结构的HSQ膜。通过等离子体中的热处理，臭氧还原处理，离子注入工艺或电子束轰击，从电介质层除去氢。

8. 发明申请

US20090263525A1 APPARATUS FOR MANUFACTURING LIQUID SILICON FOAM IN THE FORM OF ROLL 审中-公开
标题翻译：用于制造滚筒形式的液体硅泡沫的装置
公开(公告)号：US20090263525A1
公开(公告)日：2009-10-22
申请号：US12520599
申请日：2007-12-27
申请人： Dong-Yun Kim
发明人： Dong-Yun Kim
IPC分类号： B28B1/10
CPC分类号： B29C44/467 , B29C44/30
摘要： The present invention relates to an apparatus for manufacturing a roll-type liquid silicone rubber foam having no surface viscosity and a thin film shape with a greatly reduced thickness of 0.2 mm, which is capable of manufacturing a roll-type liquid silicone rubber foam having a predetermined width (300 mm-1,000 mm) in a continuous process useful for mass production. The apparatus includes a first PET film-supplying unit, adapted to supply a first PET film having a predetermined width; a liquid silicone rubber-supplying unit, adapted to apply a liquid silicone rubber containing a foaming agent and a curing agent on a surface of the PET film, which is supplied from the first PET film-supplying unit; a second PET film-supplying unit, adapted to supply a second PET film having no stickiness on the liquid silicone rubber applied to the first PET film, which is transferred from the first PET film-supplying unit through the liquid silicone rubber-supplying unit; a second PET film-recovering unit, adapted to recover the second PET film transferred from the second PET film-supplying unit; a foaming and curing unit, positioned between the second PET film-supplying unit and the second PET film-recovering unit and adapted to foam and cure the liquid silicone rubber disposed between the first PET film and the second PET film and to control a thickness of the liquid silicone rubber which is being foamed; and a liquid silicone rubber foam-take-up unit, adapted to take up the liquid silicone rubber foam as the final product into a roll form, which is transferred from the foaming and curing unit during the recovery of the second PET film into the second PET film-recovering unit.
摘要翻译：本发明涉及一种用于制造没有表面粘度和薄膜形状的辊型液体硅橡胶泡沫的装置，其厚度大大减小为0.2mm，其能够制造具有在大规模生产中有用的连续过程中的预定宽度（300mm-1,000mm）。该装置包括：第一PET膜供应单元，适于提供具有预定宽度的第一PET膜; 液体硅橡胶供给单元，其适于在从所述第一PET膜供给单元供给的所述PET膜的表面上涂布含有发泡剂和固化剂的液体硅橡胶; 第二PET膜供给单元，其适于在通过液体硅橡胶供给单元从第一PET膜供给单元转移到第一PET膜上的液体硅橡胶上供给无粘性的第二PET膜; 第二PET膜回收单元，用于回收从第二PET膜供给单元转移的第二PET膜; 位于第二PET膜供给单元和第二PET膜回收单元之间的发泡和固化单元，其适于发泡和固化设置在第一PET膜和第二PET膜之间的液体硅橡胶，并且控制正在发泡的液体硅橡胶; 以及液体硅橡胶泡沫拾取单元，其适于将作为最终产品的液体硅橡胶泡沫吸收成卷状，其在从第二PET膜回收到第二PET膜期间从发泡和固化单元转移 PET膜回收单元。

9. 发明授权

US06845454B2 System and method for selecting between a high and low speed clock in response to a decoded power instruction 失效
标题翻译：响应于解码的电源指令在高速和低速时钟之间进行选择的系统和方法
公开(公告)号：US06845454B2
公开(公告)日：2005-01-18
申请号：US09818888
申请日：2001-03-27
申请人： Dong-Yun Kim
发明人： Dong-Yun Kim
IPC分类号： H04L7/00 , G06F1/04 , G06F1/32 , G06F1/26
CPC分类号： G06F9/30083 , G06F1/04 , G06F1/3203 , G06F1/324 , G06F1/3278 , Y02D10/126 , Y02D10/157
摘要： A processor clock generation circuit and related method for a low power consumption modem chip design includes a first clock generator for generating a first clock signal in response to enable and disable signals; a second clock generator for generating a second clock signal that is lower in frequency than the first clock signal; a decoder for decoding an externally inputted instruction to check whether the inputted instruction is a power-down instruction or a power-up instruction, and generating control signals; a clock selection unit for, if the instruction is the power-down instruction, outputting the second clock signal as a processor clock signal and outputting a clock change end signal in response to a control signal outputted from the decoder and, if the instruction is the power-up instruction, outputting the first clock signal as the processor clock signal in response to the outputted control signal from the decoder and a first clock wake-up end signal; and a first clock controller for, if the instruction is the power-down instruction, outputting the disable signal for disabling clock generation of the first clock generator in response to the control signal outputted from the decoder and the clock change end signal outputted from the clock selection unit and, if the instruction is the power up instruction, outputting the enable signal for enabling the clock generation of the first clock generator in response to the control signal outputted from the decoder, and outputting the first wake-up end signal after a predetermined time.
摘要翻译：一种用于低功耗调制解调器芯片设计的处理器时钟产生电路和相关方法包括：第一时钟发生器，用于响应于使能和禁止信号产生第一时钟信号; 第二时钟发生器，用于产生频率低于所述第一时钟信号的第二时钟信号; 解码器，用于对外部输入的指令进行解码，以检查所输入的指令是否是掉电指令还是上电指令，并产生控制信号; 时钟选择单元，如果指令是掉电指令，则输出第二时钟信号作为处理器时钟信号，并且响应于从解码器输出的控制信号输出时钟转换结束信号，并且如果指令是上电指令，响应于从解码器输出的控制信号和第一时钟唤醒结束信号，输出第一时钟信号作为处理器时钟信号; 以及第一时钟控制器，用于如果指令是掉电指令，则响应于从解码器输出的控制信号和从时钟输出的时钟改变结束信号输出用于禁止第一时钟发生器的时钟产生的禁止信号选择单元，并且如果所述指令是所述上电指令，则响应于从所述解码器输出的控制信号，输出用于启用所述第一时钟发生器的时钟生成的使能信号，并且在预定的所述第一唤醒结束信号之后输出所述第一唤醒结束信号时间。

10. 发明授权

US06723647B1 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06723647B1
公开(公告)日：2004-04-20
申请号：US09618097
申请日：2000-07-17
申请人： Dong-Yun Kim , Yong-Hyeon Park
发明人： Dong-Yun Kim , Yong-Hyeon Park
IPC分类号： H01L21302
CPC分类号： H01L23/544 , H01L27/1052 , H01L2223/54433 , H01L2223/54453 , H01L2223/54493 , H01L2924/0002 , H01L2924/00
摘要： A method is disclosed for manufacturing a semiconductor device. Initially, a conductive layer is formed over a cell array region, in which high-integrated devices are formed, and over a non-cell region, which functions to assist a proper formation of the cell array region. An etching mask pattern is then formed over the conductive layer to form a conductive pattern over the cell array region and to remove the conductive layer formed on the non-cell region. The conductive pattern is actually formed by etching the conductive layer. An ion-assisted plasma etching is then implemented to form a pattern on the cell array region. This prevents the generation of arcing caused by independent conductive patterns formed on the non-cell region during the ion-assisted plasma etching.
摘要翻译：公开了制造半导体器件的方法。最初，在形成高集成器件的单元阵列区域上形成导电层，并且在用于辅助电池阵列区域的适当形成的非电池区域上形成导电层。然后在导电层上形成蚀刻掩模图案，以在单元阵列区域上形成导电图案，并去除在非单元区域上形成的导电层。导电图案实际上是通过蚀刻导电层形成的。然后执行离子辅助等离子体蚀刻以在单元阵列区域上形成图案。这防止了在离子辅助等离子体蚀刻期间由非单元区域上形成的独立导电图案引起的电弧的产生。

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