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1. 发明申请

US20060163451A1 Image sensor and method of fabrication 失效
公开(公告)号：US20060163451A1
公开(公告)日：2006-07-27
申请号：US11336906
申请日：2006-01-23
申请人： Young-Hoon Park , Tae-Seok Oh , Eun-Soo Kim , June-Taeg Lee
发明人： Young-Hoon Park , Tae-Seok Oh , Eun-Soo Kim , June-Taeg Lee
IPC分类号： H01L27/00 , H01L31/00
CPC分类号： H01L31/02162 , H01L27/14621 , H01L27/14627 , H01L27/14685 , H01L31/02161
摘要： Disclosed is an image sensor and method of fabricating the same. The image sensor includes a photoelectric transformation region formed in a semiconductor substrate, and pluralities of interlayer dielectric films formed over the photoelectric transformation regions. The interlayer dielectric films contain multilevel interconnection layers. A color filter layer is disposed in a well region formed in the interlayer dielectric films over the photoelectric transformation region. A passivation layer is interposed between the color filter layer and the interlayer dielectric films.

2. 发明授权

US07504614B2 Image sensor and method of fabrication 失效
标题翻译：图像传感器和制造方法
公开(公告)号：US07504614B2
公开(公告)日：2009-03-17
申请号：US11336906
申请日：2006-01-23
申请人： Young-Hoon Park , Tae-Seok Oh , Eun-Soo Kim , June-Taeg Lee
发明人： Young-Hoon Park , Tae-Seok Oh , Eun-Soo Kim , June-Taeg Lee
IPC分类号： H01L27/00 , G01J3/50
CPC分类号： H01L31/02162 , H01L27/14621 , H01L27/14627 , H01L27/14685 , H01L31/02161
摘要： Disclosed is an image sensor and method of fabricating the same. The image sensor includes a photoelectric transformation region formed in a semiconductor substrate, and pluralities of interlayer dielectric films formed over the photoelectric transformation regions. The interlayer dielectric films contain multilevel interconnection layers. A color filter layer is disposed in a well region formed in the interlayer dielectric films over the photoelectric transformation region. A passivation layer is interposed between the color filter layer and the interlayer dielectric films.
摘要翻译：公开了一种图像传感器及其制造方法。图像传感器包括形成在半导体衬底中的光电转换区域和形成在光电转换区域上的多个层间电介质膜。层间绝缘膜包含多层互连层。滤色器层设置在形成于光电转换区域的层间电介质膜的阱区中。钝化层插在滤色器层和层间绝缘膜之间。

3. 发明授权

US07573014B2 Image sensor with well regions of different depths and method of fabrication thereof 失效
标题翻译：具有不同深度的阱区域的图像传感器及其制造方法
公开(公告)号：US07573014B2
公开(公告)日：2009-08-11
申请号：US12119562
申请日：2008-05-13
申请人： Young-Hoon Park , Tae-Seok Oh , Eun-Soo Kim , June-Taeg Lee
发明人： Young-Hoon Park , Tae-Seok Oh , Eun-Soo Kim , June-Taeg Lee
IPC分类号： H01L27/00 , G01J3/50
CPC分类号： H01L31/02162 , H01L27/14621 , H01L27/14627 , H01L27/14685 , H01L31/02161
摘要： Disclosed is an image sensor and method of fabricating the same. The image sensor includes a photoelectric transformation region formed in a semiconductor substrate, and pluralities of interlayer dielectric films formed over the photoelectric transformation regions. The interlayer dielectric films contain multilevel interconnection layers. A color filter layer is disposed in a well region formed in the interlayer dielectric films over the photoelectric transformation region. A passivation layer is interposed between the color filter layer and the interlayer dielectric films.
摘要翻译：公开了一种图像传感器及其制造方法。图像传感器包括形成在半导体衬底中的光电转换区域和形成在光电转换区域上的多个层间电介质膜。层间绝缘膜包含多层互连层。滤色器层设置在形成于光电转换区域的层间电介质膜的阱区中。钝化层插在滤色器层和层间绝缘膜之间。

4. 发明申请

US20050200734A1 CMOS image device having high light collection efficiency and method of fabricating the same 有权
标题翻译：具有高采光效率的CMOS图像器件及其制造方法
公开(公告)号：US20050200734A1
公开(公告)日：2005-09-15
申请号：US11065892
申请日：2005-02-25
申请人： Yu-Jin Ahn , Young-Hoon Park , Jae-Ku Lee , June-Taeg Lee , Sung-Won Doh , Bum-Suk Kim
发明人： Yu-Jin Ahn , Young-Hoon Park , Jae-Ku Lee , June-Taeg Lee , Sung-Won Doh , Bum-Suk Kim
IPC分类号： H01L27/14 , H01L27/146 , H01L31/10 , H04N5/225
CPC分类号： H01L27/14627
摘要： A CMOS image device comprises a semiconductor substrate having a photo diode region formed therein, an inner lens formed at a position corresponding to the photo diode region on the semiconductor substrate, and an auxiliary lens formed on the inner lens along a surface of the inner lens, wherein the auxiliary lens has a same index of refraction as the inner lens.
摘要翻译： CMOS图像器件包括其中形成有光电二极管区域的半导体衬底，形成在对应于半导体衬底上的光电二极管区域的位置处的内透镜，以及沿着内透镜的表面形成在内透镜上的辅助透镜其中辅助透镜具有与内透镜相同的折射率。

5. 发明授权

US07531779B2 CMOS image device having high light collection efficiency and method of fabricating the same 有权
标题翻译：具有高采光效率的CMOS图像器件及其制造方法
公开(公告)号：US07531779B2
公开(公告)日：2009-05-12
申请号：US11065892
申请日：2005-02-25
申请人： Yu-Jin Ahn , Young-Hoon Park , Jae-Ku Lee , June-Taeg Lee , Sung-Won Doh , Bum-Suk Kim
发明人： Yu-Jin Ahn , Young-Hoon Park , Jae-Ku Lee , June-Taeg Lee , Sung-Won Doh , Bum-Suk Kim
IPC分类号： H01L27/00
CPC分类号： H01L27/14627
摘要： A CMOS image device comprises a semiconductor substrate having a photo diode region formed therein, an inner lens formed at a position corresponding to the photo diode region on the semiconductor substrate, and an auxiliary lens formed on the inner lens along a surface of the inner lens, wherein the auxiliary lens has a same index of refraction as the inner lens.
摘要翻译： CMOS图像器件包括其中形成有光电二极管区域的半导体衬底，形成在对应于半导体衬底上的光电二极管区域的位置处的内透镜，以及沿着内透镜的表面形成在内透镜上的辅助透镜其中辅助透镜具有与内透镜相同的折射率。

6. 发明授权

US10033974B2 Electronic device having a color filter and method of forming the same 有权
公开(公告)号：US10033974B2
公开(公告)日：2018-07-24
申请号：US14797656
申请日：2015-07-13
申请人： Ha-Kyu Choi , Chang-Rok Moon , June-Taeg Lee , Hyung-Jun Kim
发明人： Ha-Kyu Choi , Chang-Rok Moon , June-Taeg Lee , Hyung-Jun Kim
IPC分类号： G02B5/20 , H01L27/146 , H04N9/04
摘要： An electronic device is provided. The electronic device includes a first inorganic color filter including a first surface on which light is incident and a second surface opposite the first surface; and a first organic color filter disposed on the first surface of the first inorganic color filter.

7. 发明授权

US08119437B2 Methods of manufacturing an image sensor 有权
标题翻译：图像传感器的制造方法
公开(公告)号：US08119437B2
公开(公告)日：2012-02-21
申请号：US12458087
申请日：2009-06-30
申请人： Jung-Saeng Kim , June-Taeg Lee , Sung-Kwan Kim , Jeong-Wook Ko
发明人： Jung-Saeng Kim , June-Taeg Lee , Sung-Kwan Kim , Jeong-Wook Ko
IPC分类号： H01L31/0232
CPC分类号： H01L27/14632 , H01L27/14621 , H01L27/14627 , H01L27/14685
摘要： The method of manufacturing an image sensor includes providing a semiconductor substrate including a first pixel region, first forming a first pattern on the first pixel region, first performing a reflow of the first pattern to form a sub-micro lens on the first pixel region, second forming a second pattern on the sub-micro lens, and second performing a reflow of the second pattern to form a first micro lens covering the sub-micro lens.
摘要翻译：制造图像传感器的方法包括提供包括第一像素区域的半导体衬底，首先在第一像素区域上形成第一图案，首先在第一像素区域上执行第一图案的回流以形成子微透镜，在所述亚微透镜上形成第二图案，并且第二图案执行所述第二图案的回流以形成覆盖所述副微透镜的第一微透镜。

8. 发明申请

US20150287766A1 UNIT PIXEL OF AN IMAGE SENSOR AND IMAGE SENSOR INCLUDING THE SAME 审中-公开
标题翻译：图像传感器的单元像素和包括其的图像传感器
公开(公告)号：US20150287766A1
公开(公告)日：2015-10-08
申请号：US14676399
申请日：2015-04-01
申请人： Tae-Chan Kim , June-Taeg Lee , Dong-Ki Min , Sang-Chul Sul , Myung-Won Lee , Tae-Yon Lee , Jung-Kyu Jung
发明人： Tae-Chan Kim , June-Taeg Lee , Dong-Ki Min , Sang-Chul Sul , Myung-Won Lee , Tae-Yon Lee , Jung-Kyu Jung
IPC分类号： H01L27/30 , H01L27/146
CPC分类号： H01L27/307 , H01L27/1461 , H01L27/14612 , H01L27/14621 , H01L27/14625 , H01L27/14641 , H01L27/14645 , H01L27/14649 , H01L27/14665
摘要： A unit pixel of an image sensor is provided. The unit pixel includes a visible light detection layer and an infrared light detection layer disposed on the visible light detection layer. The visible light detection layer includes visible light pixels and color filters configured to detect visible light to output first charges. The infrared light detection layer includes at least one infrared light pixel configured to detect infrared light to output second charges.
摘要翻译：提供图像传感器的单位像素。单位像素包括可见光检测层和设置在可见光检测层上的红外光检测层。可见光检测层包括可见光像素和被配置为检测可见光以输出第一电荷的滤色器。红外光检测层包括被配置为检测红外光以输出第二电荷的至少一个红外光像素。

9. 发明授权

US08847297B2 Image sensor having moisture absorption barrier layer, fabricating method thereof, and device comprising the image sensor 有权
标题翻译：具有吸湿阻挡层的图像传感器及其制造方法以及包括图像传感器的装置
公开(公告)号：US08847297B2
公开(公告)日：2014-09-30
申请号：US12977950
申请日：2010-12-23
申请人： Hong-Ki Kim , Ho-Kyu Kang , June-Taeg Lee , Jae-Hee Choi
发明人： Hong-Ki Kim , Ho-Kyu Kang , June-Taeg Lee , Jae-Hee Choi
IPC分类号： H01L31/06 , H01L27/146
CPC分类号： H01L27/14636 , H01L23/564 , H01L27/14618 , H01L27/14621 , H01L27/14632 , H01L27/14638 , H01L27/1464 , H01L27/14687 , H01L2224/48095 , H01L2224/48227 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
摘要： Image sensor, fabricating method thereof, and device comprising the image sensor are provided, which comprises a substrate in which a photoelectric transformation device is formed, an interconnection structure formed on the substrate and including multiple intermetal dielectric layers and multiple metal interconnections placed in the multiple intermetal dielectric layers, the interconnection structure defining a cavity aligned corresponding to the photoelectric transformation device, a moisture absorption barrier layer conformally formed on a top of the interconnection structure and in the cavity; and a light guide unit formed on the moisture absorption barrier layer and including light transmittance material filling the cavity, wherein the moisture absorption barrier layer is formed with a uniform thickness on both sides and a bottom of the cavity and on a top surface of the multiple intermetal dielectric layer.
摘要翻译：提供了图像传感器及其制造方法以及包括图像传感器的装置，其包括形成有光电转换装置的基板，形成在基板上的互连结构，并且包括多个金属间介电层和多个金属互连金属间电介质层，所述互连结构限定对应于所述光电转换装置对准的空腔;保形地形成在所述互连结构的顶部和所述空腔中的吸湿阻挡层; 以及导光单元，其形成在吸湿阻挡层上并且包括填充空腔的透光材料，其中吸湿阻挡层在空腔的两侧和底部以及多个顶部表面上形成均匀的厚度金属间电介质层。

10. 发明申请

US20110176022A1 Image Sensor Devices Having Peripheral Circuits Therein that Use Light Guide Materials as Electrical Insulators 有权
标题翻译：具有使用导光材料作为电绝缘体的外围电路的图像传感器设备
公开(公告)号：US20110176022A1
公开(公告)日：2011-07-21
申请号：US12964043
申请日：2010-12-09
申请人： Jung-Hyun Cho , June-Taeg Lee , Sun-Wook Heo , Kee-Moon Chun
发明人： Jung-Hyun Cho , June-Taeg Lee , Sun-Wook Heo , Kee-Moon Chun
IPC分类号： H04N5/228
CPC分类号： H04N5/374 , H01L27/14618 , H01L27/14627 , H01L27/14629 , H01L27/14632 , H01L27/14636 , H01L2924/0002 , H04N5/2257 , H01L2924/00
摘要： An image sensor includes an array of image sensor cells, on a substrate, and a peripheral circuit region extending adjacent the array of image sensor cells. The array of image sensor cells includes a plurality of lens elements and a plurality of color filters extending adjacent the plurality of lens elements. A plurality of photodiodes is provided in the substrate. The plurality of photodiodes are aligned to corresponding ones of the plurality of lens elements. An interconnection structure is also provided, which extends between the plurality of photodiodes and the plurality of color filters. The interconnection structure has an array of cavities therein that are aligned to corresponding ones of the plurality of photodiodes and are filled with a light guide material. The peripheral circuit region includes a metal interconnect pattern and an electrically conductive pad on the metal interconnect pattern. An electrically insulating layer extends on the electrically conductive pad. The electrically insulating layer is formed of the light guide material.
摘要翻译：图像传感器包括在基板上的图像传感器单元的阵列和与图像传感器单元阵列相邻延伸的外围电路区域。图像传感器单元的阵列包括多个透镜元件和与多个透镜元件相邻延伸的多个滤色器。在基板中设置多个光电二极管。多个光电二极管与多个透镜元件中的相应的一个对准。还提供互连结构，其在多个光电二极管和多个滤色器之间延伸。互连结构具有其中的空腔阵列，其与多个光电二极管中的相应的一个对准，并且填充有导光材料。外围电路区域包括金属互连图案和金属互连图案上的导电焊盘。电绝缘层在导电垫上延伸。电绝缘层由导光材料形成。

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