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1. 发明申请

US20050109462A1 Apparatus for generating inductively-coupled plasma and antenna coil structure thereof for generating inductive electric fields 审中-公开
标题翻译：用于产生用于产生感应电场的感应耦合等离子体和天线线圈结构的装置
公开(公告)号：US20050109462A1
公开(公告)日：2005-05-26
申请号：US10909467
申请日：2004-08-02
申请人： Young-Dong Lee , Jai-Kwang Shin , Jae-Joon Oh , Seong-Gu Kim
发明人： Young-Dong Lee , Jai-Kwang Shin , Jae-Joon Oh , Seong-Gu Kim
IPC分类号： H01L21/02 , C23C16/00 , C23F1/00 , H01J37/32 , H01L21/306
CPC分类号： H01J37/321
摘要： Disclosed is an apparatus for generating inductively-coupled plasma (ICP). The ICP generation apparatus includes a source region where an ICP antenna coil is mounted, the ICP antenna coil generating inductive electric fields for generating plasma and having a serially-connected concentric circle-type structure, the total number of windings of the ICP antenna coil being greater than 2, the ICP antenna coil having a structure in which at least one circular winging closest to the center of the concentric circle is wound in a direction opposite to that of the other windings; a sealed chamber in which a predetermined process is performed on a sample placed on a chuck therein through a reaction between plasma ions and reactive radicals; and a radio frequency (RF) power supply for providing RF electric power of a predetermined frequency to the ICP antenna coil in the source region.
摘要翻译：公开了一种用于产生电感耦合等离子体（ICP）的装置。 ICP发生装置包括安装有ICP天线线圈的源极区域，ICP天线线圈产生用于产生等离子体的感应电场并具有串联连接的同心圆形结构，ICP天线线圈的总线圈数为大于2，ICP天线线圈具有其中最靠近同心圆的中心的至少一个圆形翼沿与其它绕组的方向相反的方向缠绕的结构; 密封室，其中通过等离子体离子和反应性基团之间的反应对放置在其上的卡盘上的样品进行预定处理; 以及用于向源极区域中的ICP天线线圈提供预定频率的RF电力的射频（RF）电源。

2. 发明授权

US07081710B2 Elementary plasma source and plasma generation apparatus using the same 失效
标题翻译：基本等离子体源和使用其的等离子体产生装置
公开(公告)号：US07081710B2
公开(公告)日：2006-07-25
申请号：US10844804
申请日：2004-05-13
申请人： Andrei-B. Petrin , Jai-Kwang Shin , Jae-Joon Oh , Seong-Gu Kim , Ji-Hyun Hur
发明人： Andrei-B. Petrin , Jai-Kwang Shin , Jae-Joon Oh , Seong-Gu Kim , Ji-Hyun Hur
IPC分类号： H01J7/24
CPC分类号： H01J37/32009 , H01J37/32192 , H01J37/32678 , H05H1/18
摘要： An elementary plasma source for generating plasma is provided. In the elementary plasma source, first and second magnets are shaped like a hollow cylinder, and the second magnet surrounds the first magnet, for forming a magnetic trap between the first and second magnets. A guide provides microwaves to a space between the first and second magnets.
摘要翻译：提供了一种用于产生等离子体的基本等离子体源。在基本等离子体源中，第一和第二磁体成形为中空圆柱体，并且第二磁体围绕第一磁体，用于在第一和第二磁体之间形成磁性陷阱。引导件向第一和第二磁体之间的空间提供微波。

3. 发明申请

US20050001554A1 Elementary plasma source and plasma generation apparatus using the same 失效
标题翻译：基本等离子体源和使用其的等离子体产生装置
公开(公告)号：US20050001554A1
公开(公告)日：2005-01-06
申请号：US10844804
申请日：2004-05-13
申请人： Andrel-B. Petrin , Jai-Kwang Shin , Jae-Joon Oh , Seong-Gu Kim , Ji-Hyun Hur
发明人： Andrel-B. Petrin , Jai-Kwang Shin , Jae-Joon Oh , Seong-Gu Kim , Ji-Hyun Hur
IPC分类号： H05H1/16 , H01J37/32 , H05H1/18 , C23F1/00 , B44C1/22 , C25B9/00 , H01L21/306
CPC分类号： H01J37/32009 , H01J37/32192 , H01J37/32678 , H05H1/18
摘要： An elementary plasma source for generating plasma is provided. In the elementary plasma source, first and second magnets are shaped like a hollow cylinder, and the second magnet surrounds the first magnet, for forming a magnetic trap between the first and second magnets. A guide provides microwaves to a space between the first and second magnets.
摘要翻译：提供了一种用于产生等离子体的基本等离子体源。在基本等离子体源中，第一和第二磁体成形为中空圆柱体，并且第二磁体围绕第一磁体，用于在第一和第二磁体之间形成磁性陷阱。引导件向第一和第二磁体之间的空间提供微波。

4. 发明申请

US20050087139A1 Antenna for use in producing plasma and plasma processing apparatus comprising the same 审中-公开
标题翻译：用于制造等离子体和等离子体处理装置的天线
公开(公告)号：US20050087139A1
公开(公告)日：2005-04-28
申请号：US10969928
申请日：2004-10-22
申请人： Woo-Seok Kim , Seung-Ki Chae , Do-Young Kam , Kwang-Myung Lee , Jai-Hyung Won , Jai-Kwang Shin , Jae-Joon Oh , Sang-Jean Jeon
发明人： Woo-Seok Kim , Seung-Ki Chae , Do-Young Kam , Kwang-Myung Lee , Jai-Hyung Won , Jai-Kwang Shin , Jae-Joon Oh , Sang-Jean Jeon
IPC分类号： H04B1/40 , C23C16/00 , H01J37/32
CPC分类号： H01J37/3222 , H01J37/32192
摘要： An antenna includes branches having substantially identical shapes. The branches are symmetrically disposed about a central point and extend along at least two concentric patterns whose geometric centers coincide with the central point. The branches each include pattern-forming portions that lie entirely within the concentric patterns, and at least one connecting portion extending between and connecting the pattern-forming portions. Input/output terminals for allowing a voltage to be impressed across the branches are provided at ends of each of the branches.
摘要翻译：天线包括具有基本相同形状的分支。分支对称地围绕中心点设置并且沿着其几何中心与中心点重合的至少两个同心图案延伸。这些分支各自包括完全位于同心图案内的图案形成部分，以及在图案形成部分之间延伸并连接图案形成部分的至少一个连接部分。在每个分支的端部设置用于允许在分支上施加电压的输入/输出端子。

5. 发明申请

US20110215378A1 High electron mobility transistors exhibiting dual depletion and methods of manufacturing the same 有权
标题翻译：显示出双耗尽的高电子迁移率晶体管及其制造方法
公开(公告)号：US20110215378A1
公开(公告)日：2011-09-08
申请号：US12929492
申请日：2011-01-28
申请人： In-Jun Hwang , Jong-Seob Kim , Hyuk-Soon Choi , Ki-Ha Hong , Jai-Kwang Shin , Jae-Joon Oh
发明人： In-Jun Hwang , Jong-Seob Kim , Hyuk-Soon Choi , Ki-Ha Hong , Jai-Kwang Shin , Jae-Joon Oh
IPC分类号： H01L29/778
CPC分类号： H01L29/66462 , H01L29/0657 , H01L29/2003 , H01L29/41766 , H01L29/42316 , H01L29/7783 , H01L29/7786
摘要： High electron mobility transistors (HEMT) exhibiting dual depletion and methods of manufacturing the same. The HEMT includes a source electrode, a gate electrode and a drain electrode disposed on a plurality of semiconductor layers having different polarities. A dual depletion region exists between the source electrode and the drain electrode. The plurality of semiconductor layers includes an upper material layer, an intermediate material layer and a lower material layer, and a polarity of the intermediate material layer is different from polarities of the upper material layer and the lower material layer.
摘要翻译：表现出双重缺陷的高电子迁移率晶体管（HEMT）及其制造方法。 HEMT包括设置在具有不同极性的多个半导体层上的源电极，栅极电极和漏电极。在源电极和漏电极之间存在双耗尽区。多个半导体层包括上材料层，中间材料层和下材料层，并且中间材料层的极性与上材料层和下材料层的极性不同。

6. 发明授权

US07410552B2 Electron cyclotron resonance equipment with variable flare angle of horn antenna 失效
标题翻译：具有喇叭天线可变喇叭角的电子回旋共振设备
公开(公告)号：US07410552B2
公开(公告)日：2008-08-12
申请号：US11007878
申请日：2004-12-09
申请人： Ji-Hyun Hur , Jai-Kwang Shin , Jae-Joon Oh
发明人： Ji-Hyun Hur , Jai-Kwang Shin , Jae-Joon Oh
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/3222 , H01J37/32192 , H01J37/32678
摘要： An electron cyclotron resonance equipment generates plasma by application of a processing gas and microwave energy into a vacuum chamber having a wafer therein in an environment of reduced pressure. The equipment includes a horn antenna assembly mounted onto an uppermost end of the vacuum chamber for radiating the microwave energy supplied from a high-frequency generator into the vacuum chamber. The horn antenna enables extension and retraction in a lengthwise direction to change a flare angle of the horn antenna. The equipment is provided with a fixed antenna and a plurality of mobile antennas to configure a horn antenna assembly, thereby enabling control of the flare angle in the horn antenna as a result of displacement of the mobile antennas. Thus, the uniformity in radiation of the microwave energy within plasma chamber can be controlled with efficiency.
摘要翻译：电子回旋共振设备通过在减压环境中将处理气体和微波能量施加到其中具有晶片的真空室中来产生等离子体。该设备包括安装在真空室的最上端的喇叭天线组件，用于将从高频发生器提供的微波能量辐射到真空室中。喇叭天线能够在长度方向上伸长和缩回以改变喇叭天线的喇叭角。该设备设置有固定天线和多个移动天线以配置喇叭天线组件，从而由于移动天线的位移而能够控制喇叭天线中的喇叭角。因此，能够有效地控制等离子体室内的微波能量的辐射的均匀性。

7. 发明申请

US20050160986A1 Electron cyclotron resonance equipment with variable flare angle of horn antenna 失效
标题翻译：具有喇叭天线可变喇叭角的电子回旋共振设备
公开(公告)号：US20050160986A1
公开(公告)日：2005-07-28
申请号：US11007878
申请日：2004-12-09
申请人： Ji-Hyun Hur , Jai-Kwang Shin , Jae-Joon Oh
发明人： Ji-Hyun Hur , Jai-Kwang Shin , Jae-Joon Oh
IPC分类号： H01L21/3065 , C23C16/00 , H01J37/32
CPC分类号： H01J37/3222 , H01J37/32192 , H01J37/32678
摘要： An electron cyclotron resonance equipment generates plasma by application of a processing gas and microwave energy into a vacuum chamber having a wafer therein in an environment of reduced pressure. The equipment includes a horn antenna assembly mounted onto an uppermost end of the vacuum chamber for radiating the microwave energy supplied from a high-frequency generator into the vacuum chamber. The horn antenna enables extension and retraction in a lengthwise direction to change a flare angle of the horn antenna. The equipment is provided with a fixed antenna and a plurality of mobile antennas to configure a horn antenna assembly, thereby enabling control of the flare angle in the horn antenna as a result of displacement of the mobile antennas. Thus, the uniformity in radiation of the microwave energy within plasma chamber can be controlled with efficiency.
摘要翻译：电子回旋共振设备通过在减压环境中将处理气体和微波能量施加到其中具有晶片的真空室中来产生等离子体。该设备包括安装在真空室的最上端的喇叭天线组件，用于将从高频发生器提供的微波能量辐射到真空室中。喇叭天线能够在长度方向上伸长和缩回以改变喇叭天线的喇叭角。该设备设置有固定天线和多个移动天线以配置喇叭天线组件，从而由于移动天线的位移而能够控制喇叭天线中的喇叭角。因此，能够有效地控制等离子体室内的微波能量的辐射的均匀性。

8. 发明授权

US08921220B2 Selective low-temperature ohmic contact formation method for group III-nitride heterojunction structured device 有权
标题翻译：用于III族氮化物异质结结构器件的选择性低温欧姆接触形成方法
公开(公告)号：US08921220B2
公开(公告)日：2014-12-30
申请号：US13599980
申请日：2012-08-30
申请人： Xianyu Wenxu , Jeong-Yub Lee , Chang -youl Moon , Yong-Young Park , Woo Young Yang , Jae-Joon Oh , In-Jun Hwang
发明人： Xianyu Wenxu , Jeong-Yub Lee , Chang -youl Moon , Yong-Young Park , Woo Young Yang , Jae-Joon Oh , In-Jun Hwang
IPC分类号： H01L21/28 , H01L21/3205
CPC分类号： H01L21/268 , H01L21/28575 , H01L21/3245 , H01L29/2003 , H01L29/452 , H01L29/517 , H01L29/66462
摘要： A method for forming a selective ohmic contact for a Group III-nitride heterojunction structured device may include forming a conductive layer and a capping layer on an epitaxial substrate including at least one Group III-nitride heterojunction layer and having a defined ohmic contact region, the capping layer being formed on the conductive layer or between the conductive layer and the Group III-nitride heterojunction layer in one of the ohmic contact region and non-ohmic contact region, and applying at least one of a laser annealing process and an induction annealing process on the substrate at a temperature of less than or equal to about 750° C. to complete the selective ohmic contact in the ohmic contact region.
摘要翻译：用于形成用于III族氮化物异质结结构器件的选择性欧姆接触的方法可包括在包括至少一个III族氮化物异质结层并且具有限定的欧姆接触区域的外延衬底上形成导电层和覆盖层，覆盖层形成在导电层之间或在欧姆接触区域和非欧姆接触区域之一的导电层和III族氮化物异质结层之间，并且施加激光退火工艺和感应退火工艺中的至少一个在小于或等于约750℃的温度下在衬底上完成欧姆接触区域中的选择性欧姆接触。

9. 发明申请

US20070077366A1 Plasma doping method and plasma doping apparatus for performing the same 审中-公开
标题翻译：等离子体掺杂法和等离子体掺杂装置
公开(公告)号：US20070077366A1
公开(公告)日：2007-04-05
申请号：US11542468
申请日：2006-10-04
申请人： Gyeong-Su Keum , Ji-Hyun Hur , Jai-Hyung Won , No-Hyun Huh , Jae-Joon Oh
发明人： Gyeong-Su Keum , Ji-Hyun Hur , Jai-Hyung Won , No-Hyun Huh , Jae-Joon Oh
IPC分类号： C23C14/00 , H05H1/24 , G21G5/00
CPC分类号： C23C14/48 , H01L21/2236
摘要： A method of doping ions into an object using plasma, including providing a doping gas between a first electrode and a second electrode, where an object is disposed between the first and the second electrodes, applying a first power to the first electrode and grounding the second electrode, exciting the doping gas to a plasma state, directing ions toward the object to be doped, applying a second power to the second electrode and grounding the first electrode, and counting a dose of the ions directed toward the second electrode, and an apparatus for performing the same.
摘要翻译：一种使用等离子体将离子掺杂到物体中的方法，包括在第一电极和第二电极之间提供掺杂气体，其中物体设置在第一和第二电极之间，向第一电极施加第一电力并将第二电极接地将掺杂气体激发到等离子体状态，将离子引向待掺杂的物体，向第二电极施加第二功率并将第一电极接地，并计数朝向第二电极的离子的剂量;以及设备执行相同。

10. 发明申请

US20110273221A1 Driving circuits, power devices and electronic devices including the same 有权
标题翻译：驱动电路，功率器件和包括它们的电子器件
公开(公告)号：US20110273221A1
公开(公告)日：2011-11-10
申请号：US13064264
申请日：2011-03-15
申请人： Ho-jung Kim , Jae-kwang Shin , Jae-Joon Oh , Jong-seob Kim , Hyuk-soon Choi , In-jun Hwang , Ki-ha Hong
发明人： Ho-jung Kim , Jae-kwang Shin , Jae-Joon Oh , Jong-seob Kim , Hyuk-soon Choi , In-jun Hwang , Ki-ha Hong
IPC分类号： H03K17/284 , H03K17/687
CPC分类号： H03K17/163 , H03K17/284
摘要： A power device includes a switching device having a control terminal and an output terminal; and a driving circuit configured to provide a driving voltage to the control terminal such that a voltage between the control terminal and the output terminal remains less than or equal to a critical voltage. A rise time required for the driving voltage to reach a target level is determined according to current-voltage characteristics of the switching device. And, when the voltage between the control terminal and the output terminal exceeds the critical voltage, leakage current is generated between the control terminal and the output terminal.
摘要翻译：功率器件包括具有控制端子和输出端子的开关器件; 以及驱动电路，被配置为向控制端子提供驱动电压，使得控制端子和输出端子之间的电压保持小于或等于临界电压。根据开关装置的电流 - 电压特性来确定驱动电压达到目标电平所需的上升时间。而且，当控制端子与输出端子之间的电压超过临界电压时，控制端子与输出端子之间产生漏电流。

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