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1. 发明授权

US09660048B2 High electron mobility transistors exhibiting dual depletion and methods of manufacturing the same 有权
公开(公告)号：US09660048B2
公开(公告)日：2017-05-23
申请号：US12929492
申请日：2011-01-28
申请人： In-jun Hwang , Jong-seob Kim , Hyuk-soon Choi , Ki-ha Hong , Jai-kwang Shin , Jae-joon Oh
发明人： In-jun Hwang , Jong-seob Kim , Hyuk-soon Choi , Ki-ha Hong , Jai-kwang Shin , Jae-joon Oh
IPC分类号： H01L29/66 , H01L29/778 , H01L29/06 , H01L29/20 , H01L29/417 , H01L29/423
CPC分类号： H01L29/66462 , H01L29/0657 , H01L29/2003 , H01L29/41766 , H01L29/42316 , H01L29/7783 , H01L29/7786
摘要： High electron mobility transistors (HEMT) exhibiting dual depletion and methods of manufacturing the same. The HEMT includes a source electrode, a gate electrode and a drain electrode disposed on a plurality of semiconductor layers having different polarities. A dual depletion region exists between the source electrode and the drain electrode. The plurality of semiconductor layers includes an upper material layer, an intermediate material layer and a lower material layer, and a polarity of the intermediate material layer is different from polarities of the upper material layer and the lower material layer.

2. 发明授权

US09543391B2 High electron mobility transistor having reduced threshold voltage variation and method of manufacturing the same 有权
标题翻译：具有降低的阈值电压变化的高电子迁移率晶体管及其制造方法
公开(公告)号：US09543391B2
公开(公告)日：2017-01-10
申请号：US13517815
申请日：2012-06-14
申请人： In-jun Hwang , Jae-joon Oh , Jae-won Lee , Hyo-ji Choi
发明人： In-jun Hwang , Jae-joon Oh , Jae-won Lee , Hyo-ji Choi
IPC分类号： H01L29/20 , H01L29/423 , H01L29/778 , H01L29/10 , H01L29/16
CPC分类号： H01L29/2003 , H01L29/1029 , H01L29/1608 , H01L29/42316 , H01L29/42376 , H01L29/7786 , H01L29/7789
摘要： According to example embodiments a transistor includes a channel layer on a substrate, a first channel supply layer on the channel, a depletion layer, a second channel supply layer, source and drain electrodes on the first channel supply layer, and a gate electrode on the depletion layer. The channel includes a 2DEG channel configured to generate a two-dimensional electron gas and a depletion area. The first channel supply layer corresponds to the 2DEG channel and defines an opening that exposes the depletion area. The depletion layer is on the depletion area of the channel layer. The second channel supply layer is between the depletion layer and the depletion area.
摘要翻译：根据示例性实施例，晶体管包括衬底上的沟道层，沟道上的第一沟道供应层，耗尽层，第二沟道供应层，第一沟道供应层上的源电极和漏电极，以及栅电极耗尽层通道包括被配置为产生二维电子气和耗尽区的2DEG通道。第一通道供应层对应于2DEG通道并且限定暴露耗尽区的开口。耗尽层在通道层的耗尽区上。第二通道供应层位于耗尽层和耗尽区之间。

3. 发明授权

US09123740B2 High electron mobility transistors and methods of manufacturing the same 有权
标题翻译：高电子迁移率晶体管及其制造方法
公开(公告)号：US09123740B2
公开(公告)日：2015-09-01
申请号：US13613677
申请日：2012-09-13
申请人： Hyuk-soon Choi , Jong-seob Kim , Jai-kwang Shin , Chang-yong Um , Jae-joon Oh , Jong-bong Ha , Ki-ha Hong , In-jun Hwang
发明人： Hyuk-soon Choi , Jong-seob Kim , Jai-kwang Shin , Chang-yong Um , Jae-joon Oh , Jong-bong Ha , Ki-ha Hong , In-jun Hwang
IPC分类号： H01L29/15 , H01L29/66 , H01L29/10 , H01L29/207 , H01L29/20 , H01L29/778 , H01L29/36
CPC分类号： H01L29/66462 , H01L29/1029 , H01L29/2003 , H01L29/207 , H01L29/36 , H01L29/7785 , H01L29/7787
摘要： According to example embodiments, a high electron mobility transistor (HEMT) includes a channel supply layer and a channel layer. The channel layer may include an effective channel region and a high resistivity region. The effective channel region may be between the high resistivity region and the channel supply layer. The high resistivity region may be a region into which impurities are ion-implanted. According to example embodiments, a method of forming a HEMT includes forming a device unit, including a channel layer and a channel supply layer, on a first substrate; adhering a second substrate to the device unit; removing the first substrate; and forming a high resistivity region by ion-implanting impurities into at least a portion of the channel layer.
摘要翻译：根据示例性实施例，高电子迁移率晶体管（HEMT）包括沟道供应层和沟道层。沟道层可以包括有效沟道区和高电阻率区。有效沟道区可以在高电阻率区域和沟道供应层之间。高电阻率区域可以是离子注入杂质的区域。根据示例实施例，形成HEMT的方法包括在第一基板上形成包括沟道层和沟道供应层的器件单元; 将第二基板粘附到所述装置单元; 去除第一衬底; 以及通过将杂质离子注入到沟道层的至少一部分中而形成高电阻率区域。

4. 发明授权

US09000485B2 Electrode structures, gallium nitride based semiconductor devices including the same and methods of manufacturing the same 有权
标题翻译：电极结构，包括其的氮化镓基半导体器件及其制造方法
公开(公告)号：US09000485B2
公开(公告)日：2015-04-07
申请号：US13489733
申请日：2012-06-06
申请人： Jeong-yub Lee , Wenxu Xianyu , Chang-youl Moon , Yong-young Park , Woo-young Yang , In-jun Hwang
发明人： Jeong-yub Lee , Wenxu Xianyu , Chang-youl Moon , Yong-young Park , Woo-young Yang , In-jun Hwang
IPC分类号： H01L29/20 , H01L21/28 , H01L29/423 , H01L29/66 , H01L29/778 , H01L29/08 , H01L29/49
CPC分类号： H01L21/28264 , H01L29/0843 , H01L29/2003 , H01L29/42364 , H01L29/49 , H01L29/66462 , H01L29/7787
摘要： An electrode structure, a GaN-based semiconductor device including the electrode structure, and methods of manufacturing the same, may include a GaN-based semiconductor layer and an electrode structure on the GaN-based semiconductor layer. The electrode structure may include an electrode element including a conductive material and a diffusion layer between the electrode element and the GaN-based semiconductor layer. The diffusion layer may include a material which is an n-type dopant with respect to the GaN-based semiconductor layer, and the diffusion layer may contact the GaN-based semiconductor layer. A region of the GaN-based semiconductor layer contacting the diffusion layer may be doped with the n-type dopant. The material of the diffusion layer may comprise a Group 4 element.
摘要翻译：包括电极结构的电极结构，GaN基半导体器件及其制造方法可以包括在GaN基半导体层上的GaN基半导体层和电极结构。电极结构可以包括在电极元件和GaN基半导体层之间包括导电材料的电极元件和扩散层。扩散层可以包括相对于GaN基半导体层为n型掺杂剂的材料，并且扩散层可以接触GaN基半导体层。与扩散层接触的GaN基半导体层的区域可以掺杂有n型掺杂剂。扩散层的材料可以包括第4族元素。

5. 发明授权

US08878246B2 High electron mobility transistors and methods of fabricating the same 有权
标题翻译：高电子迁移率晶体管及其制造方法
公开(公告)号：US08878246B2
公开(公告)日：2014-11-04
申请号：US13151475
申请日：2011-06-02
申请人： In-jun Hwang , Jai-kwang Shin , Jae-joon Oh , Jong-seob Kim , Hyuk-soon Choi , Ki-ha Hong
发明人： In-jun Hwang , Jai-kwang Shin , Jae-joon Oh , Jong-seob Kim , Hyuk-soon Choi , Ki-ha Hong
IPC分类号： H01L29/66 , H01L29/778 , H01L29/267 , H01L29/51 , H01L29/10 , H01L29/20 , H01L29/423
CPC分类号： H01L29/778 , H01L29/0847 , H01L29/1029 , H01L29/1066 , H01L29/2003 , H01L29/267 , H01L29/4236 , H01L29/42364 , H01L29/517 , H01L29/66431 , H01L29/66462 , H01L29/7785 , H01L29/7786
摘要： A High electron mobility transistor (HEMT) includes a source electrode, a gate electrode, a drain electrode, a channel forming layer in which a two-dimensional electron gas (2DEG) channel is induced, and a channel supplying layer for inducing the 2DEG channel in the channel forming layer. The source electrode and the drain electrode are located on the channel supplying layer. A channel increase layer is between the channel supplying layer and the source and drain electrodes. A thickness of the channel supplying layer is less than about 15 nm.
摘要翻译：高电子迁移率晶体管（HEMT）包括源电极，栅电极，漏电极，其中感应二维电子气（2DEG）沟道的沟道形成层，以及用于诱导2DEG沟道的沟道供应层在通道形成层中。源电极和漏极位于沟道供给层上。通道增加层位于通道供应层和源极和漏极之间。沟道供应层的厚度小于约15nm。

6. 发明申请

US20130252410A1 SELECTIVE LOW-TEMPERATURE OHMIC CONTACT FORMATION METHOD FOR GROUP III-NITRIDE HETEROJUNCTION STRUCTURED DEVICE 有权
标题翻译： III类氮化物异构结构设备的选择性低温OHMIC接触形成方法
公开(公告)号：US20130252410A1
公开(公告)日：2013-09-26
申请号：US13599980
申请日：2012-08-30
申请人： Xianyu WENXU , Jeong-Yub LEE , Chang -Youl MOON , Yong-Young PARK , Woo Young YANG , Jae-Joon OH , In-Jun HWANG
发明人： Xianyu WENXU , Jeong-Yub LEE , Chang -Youl MOON , Yong-Young PARK , Woo Young YANG , Jae-Joon OH , In-Jun HWANG
IPC分类号： H01L21/28 , H01L21/18 , H01L21/283
CPC分类号： H01L21/268 , H01L21/28575 , H01L21/3245 , H01L29/2003 , H01L29/452 , H01L29/517 , H01L29/66462
摘要： A method for forming a selective ohmic contact for a Group III-nitride heterojunction structured device may include forming a conductive layer and a capping layer on an epitaxial substrate including at least one Group III-nitride heterojunction layer and having a defined ohmic contact region, the capping layer being formed on the conductive layer or between the conductive layer and the Group III-nitride heterojunction layer in one of the ohmic contact region and non-ohmic contact region, and applying at least one of a laser annealing process and an induction annealing process on the substrate at a temperature of less than or equal to about 750° C. to complete the selective ohmic contact in the ohmic contact region.
摘要翻译：用于形成用于III族氮化物异质结结构器件的选择性欧姆接触的方法可包括在包括至少一个III族氮化物异质结层并且具有限定的欧姆接触区域的外延衬底上形成导电层和覆盖层，覆盖层形成在导电层之间或在欧姆接触区域和非欧姆接触区域之一的导电层和III族氮化物异质结层之间，并且施加激光退火工艺和感应退火工艺中的至少一个在小于或等于约750℃的温度下在衬底上完成欧姆接触区域中的选择性欧姆接触。

7. 发明申请

US20130175539A1 HIGH ELECTRON MOBILITY TRANSISTORS AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：高电子移动晶体管及其制造方法
公开(公告)号：US20130175539A1
公开(公告)日：2013-07-11
申请号：US13613677
申请日：2012-09-13
申请人： Hyuk-soon CHOI , Jong-seob KIM , Jai-kwang SHIN , Chang-yong UM , Jae-joon OH , Jong-bong HA , Ki-ha HONG , In-jun HWANG
发明人： Hyuk-soon CHOI , Jong-seob KIM , Jai-kwang SHIN , Chang-yong UM , Jae-joon OH , Jong-bong HA , Ki-ha HONG , In-jun HWANG
IPC分类号： H01L29/778 , H01L21/335 , H01L29/205
CPC分类号： H01L29/66462 , H01L29/1029 , H01L29/2003 , H01L29/207 , H01L29/36 , H01L29/7785 , H01L29/7787
摘要： According to example embodiments, a high electron mobility transistor (HEMT) includes a channel supply layer and a channel layer. The channel layer may include an effective channel region and a high resistivity region. The effective channel region may be between the high resistivity region and the channel supply layer. The high resistivity region may be a region into which impurities are ion-implanted. According to example embodiments, a method of forming a HEMT includes forming a device unit, including a channel layer and a channel supply layer, on a first substrate; adhering a second substrate to the device unit; removing the first substrate; and forming a high resistivity region by ion-implanting impurities into at least a portion of the channel layer.
摘要翻译：根据示例性实施例，高电子迁移率晶体管（HEMT）包括沟道供应层和沟道层。沟道层可以包括有效沟道区和高电阻率区。有效沟道区可以在高电阻率区域和沟道供应层之间。高电阻率区域可以是离子注入杂质的区域。根据示例实施例，形成HEMT的方法包括在第一基板上形成包括沟道层和沟道供应层的器件单元; 将第二基板粘附到所述装置单元; 去除第一衬底; 以及通过将杂质离子注入到沟道层的至少一部分中而形成高电阻率区域。

8. 发明申请

US20130105863A1 ELECTRODE STRUCTURES, GALLIUM NITRIDE BASED SEMICONDUCTOR DEVICES INCLUDING THE SAME AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：电极结构，基于氮化镓的半导体器件及其制造方法
公开(公告)号：US20130105863A1
公开(公告)日：2013-05-02
申请号：US13489733
申请日：2012-06-06
申请人： Jeong-yub Lee , Wenxu Xianyu , Chang-youl Moon , Yong-young Park , Woo-young Yang , In-jun Hwang
发明人： Jeong-yub Lee , Wenxu Xianyu , Chang-youl Moon , Yong-young Park , Woo-young Yang , In-jun Hwang
IPC分类号： H01L29/778 , H01L21/338 , B82Y99/00
CPC分类号： H01L21/28264 , H01L29/0843 , H01L29/2003 , H01L29/42364 , H01L29/49 , H01L29/66462 , H01L29/7787
摘要： An electrode structure, a GaN-based semiconductor device including the electrode structure, and methods of manufacturing the same, may include a GaN-based semiconductor layer and an electrode structure on the GaN-based semiconductor layer. The electrode structure may include an electrode element including a conductive material and a diffusion layer between the electrode element and the GaN-based semiconductor layer. The diffusion layer may include a material which is an n-type dopant with respect to the GaN-based semiconductor layer, and the diffusion layer may contact the GaN-based semiconductor layer. A region of the GaN-based semiconductor layer contacting the diffusion layer may be doped with the n-type dopant. The material of the diffusion layer may comprise a Group 4 element.
摘要翻译：包括电极结构的电极结构，GaN基半导体器件及其制造方法可以包括在GaN基半导体层上的GaN基半导体层和电极结构。电极结构可以包括在电极元件和GaN基半导体层之间包括导电材料的电极元件和扩散层。扩散层可以包括相对于GaN基半导体层为n型掺杂剂的材料，并且扩散层可以接触GaN基半导体层。与扩散层接触的GaN基半导体层的区域可以掺杂有n型掺杂剂。扩散层的材料可以包括第4族元素。

9. 发明授权

US08422275B2 Magnetic memory device and method 有权
公开(公告)号：US08422275B2
公开(公告)日：2013-04-16
申请号：US12372492
申请日：2009-02-17
申请人： In-jun Hwang , Tae-wan Kim , Won-cheol Jeong
发明人： In-jun Hwang , Tae-wan Kim , Won-cheol Jeong
IPC分类号： G11C11/00
CPC分类号： G11C11/15
摘要： An exemplary embodiment of a magnetic random access memory (MRAM) device includes a magnetic tunnel junction having a free layer, a first electrode (first magnetic field generating means) having a first portion that covers a surface of the free layer, and an electric power source connected to the first electrode via a connection that covers less than half of the first portion of the first electrode. Another exemplary embodiment of an MRAM device includes a magnetic tunnel junction, first and second electrodes (first and second magnetic field generating means) directly connected to the magnetic tunnel junction on opposite sides of the magnetic tunnel junction, and an electric power source having one pole connected to the first electrode via a first connection and having a second pole connected to the second electrode via a second connection, wherein the first and second connections are laterally offset from the connections between the first and second electrodes and the magnetic tunnel junction. Methods of operating and manufacturing these magnetic random access memories are also disclosed.

10. 发明申请

US20130001587A1 HIGH ELECTRON MOBILITY TRANSISTORS AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：高电子移动晶体管及其制造方法
公开(公告)号：US20130001587A1
公开(公告)日：2013-01-03
申请号：US13534730
申请日：2012-06-27
申请人： In-jun Hwang , Ki-ha Hong , Jae-joon Oh , Jong-bong Ha , Jong-seob Kim , Hyuk-soon Choi , Jai-kwang Shin
发明人： In-jun Hwang , Ki-ha Hong , Jae-joon Oh , Jong-bong Ha , Jong-seob Kim , Hyuk-soon Choi , Jai-kwang Shin
IPC分类号： H01L29/778 , H01L21/335 , H01L29/20
CPC分类号： H01L29/0657 , H01L21/30604 , H01L21/30608 , H01L21/3065 , H01L29/0653 , H01L29/2003 , H01L29/66462 , H01L29/7782 , H01L29/7787
摘要： High electron mobility transistors (HEMTs) including a cavity below a drain and methods of manufacturing HEMTS including removing a portion of a substrate below a drain.
摘要翻译：包括漏极下面的空穴的高电子迁移率晶体管（HEMT）和制造HEMTS的方法包括去除漏极下方的衬底的一部分。

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