专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20190111177A1 METHOD FOR PREPARING HIGHLY ELASTIC BIODEGRADABLE THREE-DIMENSIONAL STRUCTURE AND HIGHLY ELASTIC BIODEGRADABLE THREE-DIMENSIONAL STRUCTURE OBTAINED THEREBY 审中-公开
公开(公告)号：US20190111177A1
公开(公告)日：2019-04-18
申请号：US15786686
申请日：2017-10-18
申请人： Young Mee JUNG , Soo Hyun KIM , Su Hee KIM
发明人： Young Mee JUNG , Soo Hyun KIM , Su Hee KIM
IPC分类号： A61L27/14 , A61L27/58 , A61L31/14 , C08G63/08 , C08K5/00 , C08K5/1545 , C08K3/08 , B29C64/209 , B33Y10/00 , B33Y70/00 , B33Y80/00
摘要： A method for preparing a highly elastic biodegradable three-dimensional structure and a highly elastic biodegradable three-dimensional structure obtained thereby, particularly, a method for preparing a three-dimensional structure maintains mechanical properties even after three-dimensional printing, by adding a biocompatible heat stabilizer to poly(L-lactide-co-ε-caprolactone) and application of the three-dimensional structure to a scaffold for tissue engineering.

2. 发明申请

US20100124570A1 HIGHLY RESILIENT COPOLYMER WITH SHAPE RECOVERY FORCE AND FLEXIBILITY AND THE USE THEREOF FOR THE REPAIR OF ARTICULAR CARTILAGE DEFECTS 审中-公开
标题翻译：具有形状恢复力和灵活性的高活性共聚物及其用于修复牙齿缺损的用途
公开(公告)号：US20100124570A1
公开(公告)日：2010-05-20
申请号：US12614919
申请日：2009-11-09
申请人： Soo Hyun KIM , Young Mee Jung , Sang-Heon Kim
发明人： Soo Hyun KIM , Young Mee Jung , Sang-Heon Kim
IPC分类号： A61K9/14 , C08G63/08 , A61K35/32 , A61P19/00
CPC分类号： C08G63/08 , A61L27/18 , A61L2430/06 , C08L67/04
摘要： The present invention relates to a highly resilient (lactide/glycolide)/ε-caprolactone copolymer with good shape recovery force, flexibility, and biodegradability and a use of such copolymer for the repair of articular cartilage defects. The highly resilient (lactide/glycolide)/ε-caprolactone copolymer of the present invention is capable of rapidly and efficiently inducing cartilage regeneration, can be easily deformed and almost completely restored to its original form after deformation. Further, the highly resilient copolymer of the present invention can be safely and conveniently transplanted to a patient by using an arthroscope without causing economic, physical, and mental burden. Thus, the highly resilient copolymer of the present invention can be effectively used as a polymer scaffold for the repair of cartilage defects.
摘要翻译：本发明涉及具有良好形状恢复力，柔韧性和生物降解性的高弹性（丙交酯/乙交酯）/己内酯共聚物，以及这种共聚物用于修复关节软骨缺陷的用途。本发明的高弹性（丙交酯/乙交酯）/己内酯共聚物能够快速有效地诱导软骨再生，在变形后能够容易地变形并几乎完全恢复到原来的形态。此外，本发明的高弹性共聚物可以通过使用关节镜安全且方便地移植到患者，而不会造成经济，身体和精神负担。因此，本发明的高弹性共聚物可以有效地用作修复软骨缺陷的聚合物支架。

3. 发明申请

US20120161033A1 MICROORGANISM DETECTION APPARATUS 审中-公开
标题翻译：微生物检测装置
公开(公告)号：US20120161033A1
公开(公告)日：2012-06-28
申请号：US13315765
申请日：2011-12-09
申请人： Joonhyung KWON , Hee Yuel ROH , Du Seop YOON , Soo Hyun KIM , Won Sik KWON , Sung Yoon RYU , Hyub LEE
发明人： Joonhyung KWON , Hee Yuel ROH , Du Seop YOON , Soo Hyun KIM , Won Sik KWON , Sung Yoon RYU , Hyub LEE
IPC分类号： G01N21/64
CPC分类号： G01N21/6486 , G01N2021/6469
摘要： A microorganism detection apparatus including a light source unit to irradiate light, a mirror chamber including a light inlet port and a light outlet port, through which the light is introduced and discharged, respectively an inlet port and an outlet port, through which particles are introduced and discharged, respectively, so that light emitted from the particles (emitted particle light) is generated by the light, and an opening, through which the emitted particle light is discharged outside. The mirror chamber has an oval longitudinal section, and is provided at an inside thereof with a mirror. A condensing optical system is disposed in front of the opening outside the opening to condense the emitted particle light discharged through the opening. Condensing efficiency of the fluorescent light condensing optical system is maximized.
摘要翻译：一种微生物检测装置，包括用于照射光的光源单元，包括光入口的反射镜室和光出口，光分别通过其引入和排出入口和出口，通过该入口和出口引入颗粒并分别放电，使得由光产生从颗粒发射的光（发射的粒子光），并且将出射的粒子光通过该开口排出到外部。镜室具有椭圆形的纵向截面，并在其内部设置有反射镜。聚光光学系统设置在开口外侧的开口的前面，以冷凝通过开口排出的发射的粒子光。荧光聚光光学系统的冷凝效率最大化。

4. 发明申请

US20120084318A1 SYSTEM AND METHOD FOR PROVIDING DOCUMENT BASED ON PERSONAL NETWORK 有权
标题翻译：基于个人网络提供文档的系统和方法
公开(公告)号：US20120084318A1
公开(公告)日：2012-04-05
申请号：US13239102
申请日：2011-09-21
申请人： In Ho KANG , Soo Hyun KIM , Chan Hoon PARK
发明人： In Ho KANG , Soo Hyun KIM , Chan Hoon PARK
IPC分类号： G06F17/30
CPC分类号： G06F17/30011 , G06Q10/10
摘要： Provided are a system and method for providing a document based on a personal network. The document providing system may include a community searching unit to search for a community associated with a first document prepared by a first user, a document registration unit to register the first document in the searched community, and to receive a second document, associated with the first document, registered by a second user included in the community, and a document providing unit to provide the second document associated with the first document. According to embodiments of the present invention, a response that the first user may desire may be provided by receiving a response, registered by the second user included in the community associated with the first user, with respect to the document prepared by the first user.
摘要翻译：提供了一种用于提供基于个人网络的文档的系统和方法。文档提供系统可以包括：社区搜索单元，用于搜索与由第一用户准备的第一文档相关联的社区，文档注册单元，用于在搜索到的社区中注册第一文档，以及接收与第一文档相关联的第二文档第一文件，由包括在社区中的第二用户注册，以及文档提供单元，用于提供与第一文档相关联的第二文档。根据本发明的实施例，可以通过从第一用户准备的文档接收包括在与第一用户相关联的社区中的第二用户注册的响应来提供第一用户可能希望的响应。

5. 发明申请

US20100323495A1 RECESSED GATE ELECTRODE MOS TRANSISTOR AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：闭合栅极电极MOS晶体管及其制造方法
公开(公告)号：US20100323495A1
公开(公告)日：2010-12-23
申请号：US12861111
申请日：2010-08-23
申请人： Jun Ki KIM , Soo Hyun KIM , Hyun Chul SOHN , Se Aug JANG
发明人： Jun Ki KIM , Soo Hyun KIM , Hyun Chul SOHN , Se Aug JANG
IPC分类号： H01L21/762 , H01L21/28
CPC分类号： H01L29/66795 , H01L27/10876 , H01L27/10879 , H01L29/7853
摘要： Disclosed are a transistor and a method for fabricating the same capable of increasing a threshold voltage and a driving current of the transistor. The method includes the steps of forming a first etch mask on a silicon substrate, forming a trench by etching the exposed isolation area, forming a first insulation layer in the trench and the first etch mask, forming a second insulation layer on the first insulation layer, removing the second insulation layer and the first insulation layer until the first etch mask is exposed, forming a trench type isolation layer on the isolation area, forming a second etch mask on an entire surface of the silicon substrate, etching the exposed channel area, performing an etching process with respect to a resultant substrate structure, and forming a gate in the recess.
摘要翻译：公开了一种晶体管及其制造方法，其能够增加晶体管的阈值电压和驱动电流。该方法包括以下步骤：在硅衬底上形成第一蚀刻掩模，通过蚀刻暴露的隔离区域形成沟槽，在沟槽中形成第一绝缘层和第一蚀刻掩模，在第一绝缘层上形成第二绝缘层去除所述第二绝缘层和所述第一绝缘层直到所述第一蚀刻掩模被暴露，在所述隔离区域上形成沟槽型隔离层，在所述硅衬底的整个表面上形成第二蚀刻掩模，蚀刻所述暴露的沟道区域，对所得基板结构进行蚀刻处理，以及在所述凹部中形成栅极。

6. 发明申请

US20100038788A1 MULTI-LAYERED METAL LINE OF SEMICONDUCTOR DEVICE FOR PREVENTING DIFFUSION BETWEEN METAL LINES AND METHOD FOR FORMING THE SAME 失效
标题翻译：用于防止金属线之间的扩散的半导体器件的多层金属线及其形成方法
公开(公告)号：US20100038788A1
公开(公告)日：2010-02-18
申请号：US12607267
申请日：2009-10-28
申请人： Jeong Tae KIM , Baek Mann KIM , Soo Hyun KIM , Young Jin LEE , Dong Ha JUNG
发明人： Jeong Tae KIM , Baek Mann KIM , Soo Hyun KIM , Young Jin LEE , Dong Ha JUNG
IPC分类号： H01L23/532
CPC分类号： H01L21/76843 , H01L21/76805 , H01L21/76814 , H01L21/76846 , H01L21/76849 , H01L21/76856 , H01L23/5226 , H01L23/53214 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A multi-layered metal line of a semiconductor device includes a semiconductor substrate; a lower metal line formed on the semiconductor substrate and recessed on a surface thereof; an insulation layer formed on the semiconductor substrate including the lower metal line and having a damascene pattern for exposing a recessed portion of the lower metal line and for delimiting an upper metal line forming region; a glue layer formed on a surface of the recessed portion of the lower metal line; a first diffusion barrier formed on the glue layer to fill the recessed portion of the lower metal line; a second diffusion barrier formed on the glue layer and the first diffusion barrier; a third diffusion barrier formed on the second diffusion barrier and a surface of the damascene pattern; and an upper metal line formed on the third diffusion barrier to fill the damascene pattern.
摘要翻译：半导体器件的多层金属线包括半导体衬底; 形成在半导体衬底上并在其表面上凹陷的下金属线; 形成在所述半导体衬底上的绝缘层，所述绝缘层包括所述下金属线并且具有用于暴露所述下金属线的凹陷部分并限定上金属线形成区域的镶嵌图案; 形成在下金属线的凹部的表面上的胶层; 形成在所述胶层上以填充所述下金属线的凹部的第一扩散阻挡层; 形成在所述胶层和所述第一扩散阻挡层上的第二扩散阻挡层; 形成在所述第二扩散阻挡层上的第三扩散阻挡层和所述镶嵌图案的表面; 以及形成在第三扩散阻挡层上以填充镶嵌图案的上金属线。

7. 发明申请

US20090200672A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20090200672A1
公开(公告)日：2009-08-13
申请号：US12427894
申请日：2009-04-22
申请人： Soo Hyun KIM , Kwan Yong LIM , Baek Mann KIM , Young Jin LEE , Noh Jung KWAK , Hyun Chul SOHN
发明人： Soo Hyun KIM , Kwan Yong LIM , Baek Mann KIM , Young Jin LEE , Noh Jung KWAK , Hyun Chul SOHN
IPC分类号： H01L23/52 , H01L21/336 , H01L21/4763
CPC分类号： H01L21/76841 , H01L21/28562 , H01L27/10873 , H01L27/10885 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a method for manufacturing a semiconductor device. This method includes the step of forming a diffusion barrier film, which is interposed between a silicon film and a metal film and functions to prevent diffusion between the silicon and metal films. The diffusion barrier film is formed of a WSixNy film or a WSix film by using an ALD process.
摘要翻译：公开了半导体器件的制造方法。该方法包括形成介于硅膜和金属膜之间的扩散阻挡膜的步骤，其功能是防止硅和金属膜之间的扩散。通过使用ALD工艺，由WSixNy膜或WSix膜形成扩散阻挡膜。

8. 发明申请

US20080157370A1 METAL WIRE FOR A SEMICONDUCTOR DEVICE FORMED WITH A METAL LAYER WITHOUT VOIDS THEREIN AND A METHOD FOR FORMING THE SAME 有权
标题翻译：用于形成具有无电荷的金属层的半导体器件的金属线及其形成方法
公开(公告)号：US20080157370A1
公开(公告)日：2008-07-03
申请号：US11756005
申请日：2007-05-31
申请人： Dong Ha JUNG , Baek Mann KIM , Soo Hyun KIM , Young Jin LEE , Sun Woo HWANG , Jeong Tae KIM
发明人： Dong Ha JUNG , Baek Mann KIM , Soo Hyun KIM , Young Jin LEE , Sun Woo HWANG , Jeong Tae KIM
IPC分类号： H01L23/52 , H01L21/3205
CPC分类号： H01L21/76879 , H01L21/76831 , H01L21/76856 , H01L21/76886 , H01L21/76888 , H01L23/53223 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A metal wiring of a semiconductor device includes a semiconductor substrate; an insulating layer provided with a damascene pattern formed over the semiconductor substrate; a diffusion barrier layer which contains a RuO2 layer formed on a surface of the damascene pattern and an Al deposit-inhibiting layer formed on a portion of the RuO2 layer in both-side upper portion of the damascene pattern; and a wiring metal layer including Al formed on the diffusion barrier layer by MOCVD method in order to fill the damascene pattern.
摘要翻译：半导体器件的金属布线包括半导体衬底; 绝缘层，设置有形成在所述半导体衬底上的镶嵌图案; 包含在镶嵌图案的表面上形成的RuO 2层的扩散阻挡层和形成在RuO 2层的两部分上的Al沉积抑制层大马士革图案的上部; 以及通过MOCVD法在扩散阻挡层上形成的包括Al的布线金属层，以填充镶嵌图案。

9. 发明申请

US20080081452A1 METHOD OF FORMING TUNGSTEN POLYMETAL GATE HAVING LOW RESISTANCE 失效
标题翻译：形成具有低电阻性的钨金属聚合物的方法
公开(公告)号：US20080081452A1
公开(公告)日：2008-04-03
申请号：US11693137
申请日：2007-03-29
申请人： Soo Hyun KIM , Noh Jung KWAK , Baek Mann KIM , Young Jin LEE , Sun Woo HWANG , Kwan Yong LIM
发明人： Soo Hyun KIM , Noh Jung KWAK , Baek Mann KIM , Young Jin LEE , Sun Woo HWANG , Kwan Yong LIM
IPC分类号： H01L21/3205
CPC分类号： H01L21/28061 , H01L29/4941
摘要： A tungsten polymetal gate is made by forming a gate insulation layer and a polysilicon layer on a semiconductor substrate; depositing a barrier layer on the polysilicon layer; depositing a tungsten nucleation layer on the barrier layer through an ALD process; depositing a tungsten layer on the tungsten nucleation layer through a CVD process; depositing a hard mask layer on the tungsten layer; and etching the hard mask layer, the tungsten layer, the tungsten nucleation layer, the barrier layer, the polysilicon layer, and the gate insulation layer.
摘要翻译：通过在半导体衬底上形成栅极绝缘层和多晶硅层来制造钨多金属栅极; 在所述多晶硅层上沉积阻挡层; 通过ALD工艺在阻挡层上沉积钨成核层; 通过CVD工艺在钨成核层上沉积钨层; 在钨层上沉积硬掩模层; 并且蚀刻硬掩模层，钨层，钨成核层，势垒层，多晶硅层和栅极绝缘层。

10. 发明申请

US20090012607A1 METHOD FOR THE PREPARATION OF TUBE-TYPE POROUS BIODEGRADABLE SCAFFOLD HAVING DOUBLE-LAYERED STRUCTURE FOR VASCULAR GRAFT 审中-公开
标题翻译：用于制备具有双层结构的管状多孔生物可降解SCAFFO的方法
公开(公告)号：US20090012607A1
公开(公告)日：2009-01-08
申请号：US11952759
申请日：2007-12-07
申请人： Sang-Heon KIM , Soo Hyun KIM , Eunna CHUNG
发明人： Sang-Heon KIM , Soo Hyun KIM , Eunna CHUNG
IPC分类号： A61F2/82 , B29C70/32
CPC分类号： B29C70/32 , A61F2/06 , A61F2210/0004 , D01D5/0007 , D01D5/04
摘要： Disclosed herein are a tube-type porous scaffold having a double-layered structure for use as an artificial vascular graft and a preparation method thereof. The method comprises (1) dissolving a biodegradable polymer in an organic solvent and mixing the polymer with a porogen so as to provide a polymer/porogen mixture; (2) coating a cylindrical shaft with the polymer/porogen mixture so as to form an inner porous coating layer; (3) preparing a biodegradable polymer gel by dissolving a biodegradable polymer in an organic solvent; (4) spinning down the biodegradable polymer gel in a non-solvent coagulation bath in which the cylindrical shaft having the inner porous coating layer, obtained at step (2), is immersed and rotated to form gel-phase fibers and allowing the gel-phase fibers to wind around the inner porous coating layer of the rotating shaft so as to form an outer polymer fibrous layer; and (5) separating the double-layered porous scaffold, formed on the shaft, from the shaft and removing the organic solvent and the porogen from the scaffold. Since the porous scaffold has a double-layered structure consisting of an inner porous coating layer containing micropores and a gel-phase outer polymer fibrous layer, it has high pore interconnectivity and mechanical strength, which effectively prevents the leakage of blood, and has high cell seeding and proliferation efficiencies, thereby being useful as a tissue-engineered artificial vascular graft.
摘要翻译：本文公开了具有用作人造血管移植物的双层结构的管型多孔支架及其制备方法。该方法包括（1）将可生物降解的聚合物溶解在有机溶剂中并将该聚合物与致孔剂混合以提供聚合物/致孔剂混合物; （2）用聚合物/致孔剂混合物涂覆圆柱形轴以形成内部多孔涂层; （3）通过将可生物降解的聚合物溶解在有机溶剂中制备可生物降解的聚合物凝胶; （4）在非溶剂凝固浴中将可生物降解的聚合物凝胶纺丝，其中将具有内部多孔涂层的圆柱形轴在步骤（2）中浸渍并旋转以形成凝胶相纤维，缠绕在旋转轴的内部多孔涂层周围，以形成外部聚合物纤维层; 和（5）将形成在轴上的双层多孔支架从轴上分离并从支架中除去有机溶剂和致孔剂。由于多孔支架具有由含有微孔的内多孔涂层和凝胶相外聚合物纤维层组成的双层结构，因此具有高孔互连性和机械强度，有效防止血液渗漏，并具有高细胞播种和增殖效率，从而可用作组织工程人造血管移植物。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式