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    • 2. 发明授权
    • Method of forming array substrate for LCD
    • 一种形成LCD用阵列基板的方法,该方法具有在第二绝缘层上形成黑矩阵以覆盖除了漏电极的第一部分之外的日期线的步骤
    • US08035766B2
    • 2011-10-11
    • US12591897
    • 2009-12-03
    • Woong-Kwon KimYoun-Gyoung ChangSeung-Ryull Park
    • Woong-Kwon KimYoun-Gyoung ChangSeung-Ryull Park
    • G02F1/136G02F1/1335G02F1/1343
    • G02F1/13458G02F1/134336G02F1/136209G02F2001/136222
    • An array substrate device having a color filter-on thin film transistor (COT) structure for a liquid crystal display device includes a gate line formed on a substrate along a transverse direction, the gate line including a gate pad at one end thereof, a first insulating layer formed on the substrate to cover the gate line, the first insulating layer exposing a first portion of the gate pad, a data line formed over the first insulating layer along a longitudinal direction on the substrate, the data line defining a pixel region with the gate line and including a data pad at one end thereof, a thin film transistor formed at a crossing region of the gate and data lines, the thin film transistor including a gate electrode, a semiconductor layer, a source electrode, and a drain electrode, a black matrix overlapping the thin film transistor, the gate line, and the data line except a second portion of the drain electrode, a second insulating layer formed over an entire surface of the substrate to cover the black matrix, the second insulating layer exposing the first portion of the gate pad, a third portion of the data pad, and the pixel region, a first pixel electrode within the pixel region and contacting the second exposed portion of the drain electrode, a color filter on the first pixel electrode within the pixel region, and a second pixel electrode on the color filter and contacting the first pixel electrode.
    • 具有用于液晶显示装置的滤色器薄膜晶体管(COT)结构的阵列基板装置包括沿着横向在基​​板上形成的栅极线,栅极线在其一端包括栅极焊盘,第一 绝缘层,形成在所述基板上以覆盖所述栅极线,所述第一绝缘层暴露所述栅极焊盘的第一部分,沿着所述基板上的纵向方向在所述第一绝缘层上形成的数据线,所述数据线限定具有 栅极线,并且在其一端包括数据焊盘,形成在栅极和数据线的交叉区域的薄膜晶体管,所述薄膜晶体管包括栅电极,半导体层,源电极和漏电极 ,除了所述漏电极的第二部分之外与所述薄膜晶体管,所述栅极线和所述数据线重叠的黑矩阵,形成在所述基板的整个表面上的第二绝缘层 覆盖黑矩阵,第二绝缘层暴露栅极焊盘的第一部分,数据焊盘的第三部分和像素区域,在像素区域内的第一像素电极,并且与漏电极的第二暴露部分接触 ,像素区域内的第一像素电极上的滤色器,以及滤色器上的第二像素电极,并与第一像素电极接触。
    • 3. 发明授权
    • Array substrate for liquid crystal display device and method of manufacturing the same
    • 液晶显示装置用阵列基板及其制造方法
    • US07763483B2
    • 2010-07-27
    • US12318654
    • 2009-01-05
    • Youn-Gyoung ChangHeung-Lyul ChoSoon-Sung Yoo
    • Youn-Gyoung ChangHeung-Lyul ChoSoon-Sung Yoo
    • H01L21/00
    • G02F1/136227G02F1/134336G02F1/13458G02F1/1362G02F2001/136231G02F2001/136236
    • A method of manufacturing an array substrate for a liquid crystal display device includes forming a gate line, a gate pad and a gate electrode on a substrate through a first mask process, forming a data line, a data pad, a source electrode, a drain electrode and an active layer on the substrate including the gate line, the gate pad and the gate electrode through a second mask process, wherein the data line crosses the gate line to define a pixel region, the source electrode is extended from the data line, the drain electrode is spaced apart from the source electrode, and the active layer is disposed between the gate electrode and the source and drain electrodes, forming a passivation layer on an entire surface of the substrate including the data line, the source electrode and the drain electrode through a third mask process, the passivation layer being etched to expose the substrate in the pixel region, a part of the drain electrode, the gate pad and the data pad, and forming a pixel electrode, a gate pad terminal and a data pad terminal by depositing a transparent conductive material on an entire surface of the substrate including the passivation layer, the pixel electrode directly contacting the exposed part of the drain electrode, the gate pad terminal directly contacting the gate pad, and the data pad terminal directly contacting the data pad.
    • 制造液晶显示装置用阵列基板的方法包括通过第一掩模工艺在基板上形成栅极线,栅极焊盘和栅电极,形成数据线,数据焊盘,源电极,漏极 电极和通过第二掩模处理的包括栅极线,栅极焊盘和栅电极的衬底上的有源层,其中数据线与栅极线交叉以限定像素区域,源电极从数据线延伸, 所述漏电极与所述源电极间隔开,并且所述有源层设置在所述栅电极与所述源漏电极之间,在所述基板的整个表面上形成钝化层,所述整个表面包括所述数据线,所述源电极和所述漏极 电极通过第三掩模工艺,钝化层被蚀刻以暴露像素区域中的衬底,漏电极的一部分,栅极焊盘和数据焊盘,并且形成像素e 栅极焊盘端子和数据焊盘端子,通过在包括钝化层的基板的整个表面上沉积透明导电材料,直接接触漏电极的暴露部分的像素电极,直接接触栅极的栅极焊盘端子 焊盘和数据焊盘端子直接接触数据焊盘。
    • 9. 发明申请
    • LIQUID CRYSTAL DISPLAY AND FABRICATION METHOD THEREOF
    • 液晶显示及其制造方法
    • US20110079853A1
    • 2011-04-07
    • US12963403
    • 2010-12-08
    • Seung-Hee NamNam-Kook KimSoon-Sung YooYoun-Gyoung Chang
    • Seung-Hee NamNam-Kook KimSoon-Sung YooYoun-Gyoung Chang
    • H01L29/786H01L21/336
    • H01L27/1288H01L27/1285H01L27/1292H01L29/66765
    • A method for fabricating an LCD includes: providing a substrate with a thin film transistor (TFT) part defined thereon; forming a metallic film for a gate electrode on the substrate; etching the metallic film through a first printing process to form a gate electrode; sequentially forming a gate insulating layer, a semiconductor layer, and a metallic film for source and drain electrodes on the substrate; selectively etching the metallic film for source and drain electrodes, the semiconductor layer and the gate insulating layer through a second printing process to form a gate insulating layer pattern, a preliminary active pattern and a metallic film pattern which are sequentially stacked such that the gate insulating layer pattern is over-etched from the side of the preliminary active pattern; forming an insulating layer on the substrate with the metallic film pattern; etching the insulating layer to expose the metallic film pattern; forming a transparent conductive film on the metallic film pattern and a remaining insulating film; and selectively etching the transparent conductive film, the metallic film pattern, the preliminary active pattern to form an active pattern, a source electrode, a drain electrode, and a pixel electrode connected with the drain electrode.
    • 一种用于制造LCD的方法包括:为衬底提供限定在其上的薄膜晶体管(TFT)部分; 在基板上形成用于栅电极的金属膜; 通过第一印刷工艺蚀刻金属膜以形成栅电极; 在基板上依次形成栅极绝缘层,半导体层和源极和漏极的金属膜; 通过第二印刷工艺选择性地蚀刻用于源极和漏极,半导体层和栅极绝缘层的金属膜,以形成顺序堆叠的栅极绝缘层图案,预活性图案和金属膜图案,使得栅极绝缘 层图案从预活性图案的侧面过蚀刻; 在金属膜图案的基板上形成绝缘层; 蚀刻绝缘层以暴露金属膜图案; 在金属膜图案上形成透明导电膜和剩余的绝缘膜; 并且选择性地蚀刻透明导电膜,金属膜图案,预活性图案以形成有源图案,源电极,漏电极和与漏极连接的像素电极。