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    • 9. 发明授权
    • Vertical type MOSFET
    • 垂直型MOSFET
    • US06603173B1
    • 2003-08-05
    • US09391236
    • 1999-09-07
    • Yoshifumi OkabeYoshihiko OzekiShigeki TakahashiNorihito Tokura
    • Yoshifumi OkabeYoshihiko OzekiShigeki TakahashiNorihito Tokura
    • H01L2976
    • H01L29/7813H01L29/0696H01L29/1095H01L29/4236
    • A vertical power MOSFET, which can improve a surge withstand voltage and a surge withstand voltage against a surge voltage from an inductance load L. The vertical power MOSFET has a plurality of unit cells. The unit cell is formed from a MOSFET that uses a p-type base layer at a sidewall of a rectangular U-groove as a channel portion. Each of the p-type base layer of each unit cell is connected each others Accordingly, it can restrain an impurity concentration of a corner portion (a portion positioned at a corner) of the rectangular p-type base layer from being decreased. Therefore, it can reduce the difference in distance from the end portion of the p-type base layer to the end portion of the depletion layer. As a result, it can improve the surge withstand voltage when a surge voltage is input from an inductance load L.
    • 一种垂直功率MOSFET,其可以提高抗电压耐受电压和抵抗来自电感负载L的浪涌电压的浪涌耐受电压。垂直功率MOSFET具有多个单元电池。 单位电池由在矩形U形槽的侧壁处使用p型基底层作为沟道部分的MOSFET形成。 每个单电池的p型基极层彼此连接。因此,能够抑制矩形p型基极层的角部(位于角部的部分)的杂质浓度降低。 因此,可以减少与p型基底层的端部到耗尽层的端部的距离的差异。 因此,当从电感负载L输入浪涌电压时,可以提高浪涌耐受电压。