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1. 发明授权

US09234278B2 CVD conformal vacuum/pumping guiding design 有权
标题翻译： CVD保形真空/抽吸引导设计
公开(公告)号：US09234278B2
公开(公告)日：2016-01-12
申请号：US13354545
申请日：2012-01-20
申请人： You-Hua Chou , Chih-Tsung Lee , Chia-Ho Chen , Chin-Hsiang Lin
发明人： You-Hua Chou , Chih-Tsung Lee , Chia-Ho Chen , Chin-Hsiang Lin
IPC分类号： C23C16/00 , C23C16/44 , C23C16/455
CPC分类号： C23C16/4405 , C23C16/45591
摘要： The present disclosure relates to a guiding element for guiding gas flow within a chamber. The guiding element includes a structure, one or more inlets, an outlet, and a transportation region. The one or more inlets are formed on a first side of the structure. The inlets have inlet sizes selected according to a removal rate and to mitigate gas flow variations within the chamber. The outlet is on a second side of the structure, opposite the first side of the structure. The outlet has an outlet size selected according to the removal rate. The transportation region is within the structure and couples or connects the inlets to the outlet.
摘要翻译：本公开涉及一种用于引导室内的气体流动的引导元件。引导元件包括结构，一个或多个入口，出口和运输区域。一个或多个入口形成在结构的第一侧上。入口具有根据去除速率选择的入口尺寸并减轻腔室内的气体流量变化。出口位于结构的第二侧，与结构的第一侧相对。出口具有根据去除率选择的出口尺寸。运输区域在结构内，并将进口连接或连接到出口。

2. 发明申请

US20130189851A1 CVD Conformal Vacuum/Pumping Guiding Design 有权
标题翻译： CVD保形真空/泵送导向设计
公开(公告)号：US20130189851A1
公开(公告)日：2013-07-25
申请号：US13354545
申请日：2012-01-20
申请人： You-Hua Chou , Chih-Tsung Lee , Chia-Ho Chen , Chin-Hsiang Lin
发明人： You-Hua Chou , Chih-Tsung Lee , Chia-Ho Chen , Chin-Hsiang Lin
IPC分类号： H01L21/31 , C23C16/50 , B65D35/38 , C23C16/455
CPC分类号： C23C16/4405 , C23C16/45591
摘要： The present disclosure relates to a guiding element for guiding gas flow within a chamber. The guiding element includes a structure, one or more inlets, an outlet, and a transportation region. The one or more inlets are formed on a first side of the structure. The inlets have inlet sizes selected according to a removal rate and to mitigate gas flow variations within the chamber. The outlet is on a second side of the structure, opposite the first side of the structure. The outlet has an outlet size selected according to the removal rate. The transportation region is within the structure and couples or connects the inlets to the outlet.
摘要翻译：本公开涉及一种用于引导室内的气体流动的引导元件。引导元件包括结构，一个或多个入口，出口和运输区域。一个或多个入口形成在结构的第一侧上。入口具有根据去除速率选择的入口尺寸并减轻腔室内的气体流量变化。出口位于结构的第二侧，与结构的第一侧相对。出口具有根据去除率选择的出口尺寸。运输区域在结构内，并将进口连接或连接到出口。

3. 发明申请

US20130149871A1 CHEMICAL VAPOR DEPOSITION FILM PROFILE UNIFORMITY CONTROL 有权
标题翻译：化学蒸气沉积膜型材均匀性控制
公开(公告)号：US20130149871A1
公开(公告)日：2013-06-13
申请号：US13313106
申请日：2011-12-07
申请人： Ming-Shiou Kuo , Chih-Tsung Lee , You-Hua Chou , Ming-Chin Tsai , Chia-Ho Chen , Chin-Hsiang Lin
发明人： Ming-Shiou Kuo , Chih-Tsung Lee , You-Hua Chou , Ming-Chin Tsai , Chia-Ho Chen , Chin-Hsiang Lin
IPC分类号： H01L21/02 , C23C16/455
CPC分类号： C23C16/44 , C23C16/45565
摘要： The present disclosure provides for methods and systems for controlling profile uniformity of a chemical vapor deposition (CVD) film. A method includes depositing a first layer on a substrate by CVD with a first shower head, the first layer having a first profile, and depositing a second layer over the first layer by CVD with a second shower head, the second layer having a second profile. The combined first layer and second layer have a third profile, and the first profile, the second profile, and the third profile are different from one another.
摘要翻译：本公开提供了用于控制化学气相沉积（CVD）膜的轮廓均匀性的方法和系统。一种方法包括通过CVD用第一喷淋头沉积第一层在CVD衬底上，第一层具有第一轮廓，并且通过CVD与第二喷淋头在第一层上沉积第二层，第二层具有第二轮廓。组合的第一层和第二层具有第三轮廓，并且第一轮廓，第二轮廓和第三轮廓彼此不同。

4. 发明授权

US08916480B2 Chemical vapor deposition film profile uniformity control 有权
标题翻译：化学气相沉积膜轮廓均匀性控制
公开(公告)号：US08916480B2
公开(公告)日：2014-12-23
申请号：US13313106
申请日：2011-12-07
申请人： Ming-Shiou Kuo , Chih-Tsung Lee , You-Hua Chou , Ming-Chin Tsai , Chia-Ho Chen , Chin-Hsiang Lin
发明人： Ming-Shiou Kuo , Chih-Tsung Lee , You-Hua Chou , Ming-Chin Tsai , Chia-Ho Chen , Chin-Hsiang Lin
IPC分类号： H01L21/31
CPC分类号： C23C16/44 , C23C16/45565
摘要： The present disclosure provides for methods and systems for controlling profile uniformity of a chemical vapor deposition (CVD) film. A method includes depositing a first layer on a substrate by CVD with a first shower head, the first layer having a first profile, and depositing a second layer over the first layer by CVD with a second shower head, the second layer having a second profile. The combined first layer and second layer have a third profile, and the first profile, the second profile, and the third profile are different from one another.
摘要翻译：本公开提供了用于控制化学气相沉积（CVD）膜的轮廓均匀性的方法和系统。一种方法包括通过CVD用第一喷淋头沉积第一层在CVD衬底上，第一层具有第一轮廓，并且通过CVD与第二喷淋头在第一层上沉积第二层，第二层具有第二轮廓。组合的第一层和第二层具有第三轮廓，并且第一轮廓，第二轮廓和第三轮廓彼此不同。

5. 发明申请

US20130201596A1 Electrostatic Chuck with Multi-Zone Control 有权
标题翻译：带多区域控制的静电卡盘
公开(公告)号：US20130201596A1
公开(公告)日：2013-08-08
申请号：US13364463
申请日：2012-02-02
申请人： Chia-Ho Chen , Ming Huei Lien , Shu-Fen Wu , Chih-Tsung Lee , You-Hua Chou
发明人： Chia-Ho Chen , Ming Huei Lien , Shu-Fen Wu , Chih-Tsung Lee , You-Hua Chou
IPC分类号： H01L21/683
CPC分类号： H01L21/6833 , H01L21/6831 , H02N13/00
摘要： An electrostatic chuck for clamping a warped workpiece has a clamping surface comprising a dielectric layer. The dielectric layer has a field and one or more zones formed of differing dielectric materials. One or more electrodes are coupled to a power supply, and a controller controls a clamping voltage supplied to the one or more electrodes via the power supply. An electrostatic attraction force associated with each of the field and one or more zones of the dielectric layer of the electrostatic chuck is induced, wherein the electrostatic attraction force varies based on the dielectric material of each of the field and one or more zones. The electrostatic attraction force is greater in the one or more zones than in the field, therein attracting warped regions of the workpiece to the clamping surface and clamping the warped workpiece to the clamping surface across a surface of the warped workpiece.
摘要翻译：用于夹紧翘曲工件的静电卡盘具有包括电介质层的夹紧表面。电介质层具有由不同介电材料形成的场和一个或多个区域。一个或多个电极耦合到电源，并且控制器经由电源控制提供给一个或多个电极的钳位电压。诱发与静电卡盘的电介质层的场和一个或多个区域中的每一个相关联的静电吸引力，其中静电吸引力基于场和一个或多个区域中的每一个的介电材料而变化。在一个或多个区域中的静电吸引力比现场更大，其中将工件的翘曲区域吸引到夹紧表面，并将经弯曲的工件夹紧到穿过弯曲的工件的表面的夹紧表面。

6. 发明授权

US08902561B2 Electrostatic chuck with multi-zone control 有权
标题翻译：静电吸盘多区控制
公开(公告)号：US08902561B2
公开(公告)日：2014-12-02
申请号：US13364463
申请日：2012-02-02
申请人： Chia-Ho Chen , Ming Huei Lien , Shu-Fen Wu , Chih-Tsung Lee , You-Hua Chou
发明人： Chia-Ho Chen , Ming Huei Lien , Shu-Fen Wu , Chih-Tsung Lee , You-Hua Chou
IPC分类号： H01L21/683
CPC分类号： H01L21/6833 , H01L21/6831 , H02N13/00
摘要： An electrostatic chuck for clamping a warped workpiece has a clamping surface comprising a dielectric layer. The dielectric layer has a field and one or more zones formed of differing dielectric materials. One or more electrodes are coupled to a power supply, and a controller controls a clamping voltage supplied to the one or more electrodes via the power supply. An electrostatic attraction force associated with each of the field and one or more zones of the dielectric layer of the electrostatic chuck is induced, wherein the electrostatic attraction force varies based on the dielectric material of each of the field and one or more zones. The electrostatic attraction force is greater in the one or more zones than in the field, therein attracting warped regions of the workpiece to the clamping surface and clamping the warped workpiece to the clamping surface across a surface of the warped workpiece.
摘要翻译：用于夹紧翘曲工件的静电卡盘具有包括电介质层的夹紧表面。电介质层具有由不同介电材料形成的场和一个或多个区域。一个或多个电极耦合到电源，并且控制器经由电源控制提供给一个或多个电极的钳位电压。诱发与静电卡盘的电介质层的场和一个或多个区域中的每一个相关联的静电吸引力，其中静电吸引力基于场和一个或多个区域中的每一个的介电材料而变化。在一个或多个区域中的静电吸引力比现场更大，其中将工件的翘曲区域吸引到夹紧表面，并将经弯曲的工件夹紧到穿过弯曲的工件的表面的夹紧表面。

7. 发明授权

US09287154B2 UV curing system for semiconductors 有权
标题翻译：半导体UV固化系统
公开(公告)号：US09287154B2
公开(公告)日：2016-03-15
申请号：US13486025
申请日：2012-06-01
申请人： Ming Huei Lien , Chia-Ho Chen , Shu-Fen Wu , Chih-Tsung Lee , You-Hua Chou
发明人： Ming Huei Lien , Chia-Ho Chen , Shu-Fen Wu , Chih-Tsung Lee , You-Hua Chou
IPC分类号： H01L21/677 , H01L21/68 , H01L21/67 , H01L21/3105
CPC分类号： H01L21/6776 , H01L21/3105 , H01L21/67115
摘要： Embodiments of an ultraviolet (UV) curing system for treating a semiconductor substrate such as a wafer are disclosed. The curing system generally includes a processing chamber, a wafer support for holding a wafer in the chamber, a UV radiation source disposed above the chamber, and a UV transparent window interspersed between the radiation source and wafer support. In one embodiment, the wafer support is provided by a belt conveyor operable to transport wafers through the chamber during UV curing. In another embodiment, the UV radiation source is a movable lamp unit that travels across the top of the chamber for irradiating the wafer. In another embodiment, the UV transparent window includes a UV radiation modifier that reduces the intensity of UV radiation on portions of the wafer positioned below the modifier. Various embodiments enhance wafer curing uniformity by normalizing UV intensity levels on the wafer.
摘要翻译：公开了用于处理诸如晶片的半导体衬底的紫外（UV）固化系统的实施例。固化系统通常包括处理室，用于在室中保持晶片的晶片支撑件，设置在室上方的UV辐射源，以及散布在辐射源和晶片支撑件之间的UV透明窗口。在一个实施例中，晶片支撑件由带式输送机提供，其可操作以在UV固化期间将晶片传送通过室。在另一个实施例中，UV辐射源是可移动的灯单元，其移动穿过室的顶部以照射晶片。在另一个实施方案中，UV透明窗口包括UV辐射调节剂，其降低位于调节剂下方的晶片部分上的UV辐射强度。各种实施例通过使晶片上的UV强度水平归一化来增强晶片固化均匀性。

8. 发明申请

US20120140489A1 Illumination Device with a Lamp Cap Capable of Dissipating Heat and Spreading Light 审中-公开
标题翻译：具有能够散热和散光的灯头的照明装置
公开(公告)号：US20120140489A1
公开(公告)日：2012-06-07
申请号：US13218883
申请日：2011-08-26
申请人： Devin Chung , Tsung-Yi Lan , Chia-Ho Chen
发明人： Devin Chung , Tsung-Yi Lan , Chia-Ho Chen
IPC分类号： F21V21/02
CPC分类号： F21V5/002 , F21K9/23 , F21V3/02 , F21V19/004 , F21V29/506 , F21V29/83 , F21Y2105/10 , F21Y2115/10
摘要： An illumination device includes: a mounting unit; a lighting unit including a circuit board mounted on the mounting unit, and at least one light emitting component mounted on the circuit board; and a lamp cap mounted on the mounting unit for covering the lighting unit. The lamp cap includes a surrounding wall disposed around the lighting unit, a central top wall disposed spacedly in the surrounding wall, and a plurality of spaced apart connecting ribs interconnecting the surrounding wall and the central top wall such that a plurality of vent holes are formed among the surrounding wall, the central top wall and the connecting ribs.
摘要翻译：照明装置包括：安装单元; 包括安装在所述安装单元上的电路板的照明单元和安装在所述电路板上的至少一个发光部件; 以及安装在安装单元上用于覆盖照明单元的灯帽。所述灯头包括围绕所述照明单元设置的周围壁，围绕所述周围壁设置的中央顶壁以及将所述周围壁与所述中央顶壁互连的多个间隔开的连接肋，使得形成多个通气孔在周围的墙壁中，中心顶壁和连接肋。

9. 发明申请

US20110234540A1 BACKGROUND IMAGE UPDATING METHOD AND TOUCH SCREEN 审中-公开
标题翻译：背景图像更新方法和触摸屏
公开(公告)号：US20110234540A1
公开(公告)日：2011-09-29
申请号：US12979287
申请日：2010-12-27
申请人： Chiou-Tzung LIOU , Ting-Hsuan Chang , Ru-Yi Tsai , Tang-Wei Hsu , Chia-Ho Chen
发明人： Chiou-Tzung LIOU , Ting-Hsuan Chang , Ru-Yi Tsai , Tang-Wei Hsu , Chia-Ho Chen
IPC分类号： G06F3/042
CPC分类号： G06F3/0428
摘要： A background image updating method is adapted to a touch screen including a first and a second image modules. A first and a second images are captured by the first and the second image modules as a first and a second background images, respectively. (a) Whether an absolute value of a brightness difference between a third image captured by the first image module and the first background image is greater than a predetermine value is compared. (b) If the result of the step(a) is yes, whether an absolute value of a brightness difference between a fourth image captured by the second image module and the second background image is greater than another predetermine value is compared. (c) If the result of the step(b) is yes, a fifth and a sixth images are captured by the first and the second image modules as the first and the second background images, respectively.
摘要翻译：背景图像更新方法适用于包括第一和第二图像模块的触摸屏。第一和第二图像分别被第一和第二图像模块捕获为第一和第二背景图像。（a）比较由第一图像模块拍摄的第三图像与第一背景图像之间的亮度差的绝对值是否大于预定值。（b）如果步骤（a）的结果为是，则比较由第二图像模块捕获的第四图像与第二背景图像之间的亮度差的绝对值是否大于另一个预定值。（c）如果步骤（b）的结果为是，则分别由第一和第二图像模块捕获第五和第六图像作为第一和第二背景图像。

10. 发明授权

US08884526B2 Coherent multiple side electromagnets 有权
标题翻译：相干多面电磁铁
公开(公告)号：US08884526B2
公开(公告)日：2014-11-11
申请号：US13354604
申请日：2012-01-20
申请人： Bo-Hung Lin , Ming-Chih Tsai , Chia-Ho Chen , Chung-En Kao
发明人： Bo-Hung Lin , Ming-Chih Tsai , Chia-Ho Chen , Chung-En Kao
IPC分类号： H01J7/24
CPC分类号： H01J37/32669
摘要： In some embodiments, the present disclosure relates to a plasma processing system that generates a magnetic field having a maximum strength that is independent of workpiece size. The plasma processing system has a plurality of side electromagnets that have a size which is independent of the workpiece size. The side electromagnets are located around a perimeter of a processing chamber configured to house a semiconductor workpiece. When a current is provided to the side electromagnets, separate magnetic fields emanate from separate positions around the workpiece. The separate magnetic fields contribute to the formation of an overall magnetic field that controls the distribution of plasma within the processing chamber. Because the size of the plurality of separate side magnets is independent of the workpiece size, the plurality of side magnets can generate a magnetic field having a maximum field strength that is independent of workpiece size.
摘要翻译：在一些实施例中，本公开涉及一种产生具有与工件尺寸无关的最大强度的磁场的等离子体处理系统。等离子体处理系统具有多个侧面电磁体，其尺寸独立于工件尺寸。侧面电磁体位于被配置为容纳半导体工件的处理室的周边周围。当向侧面电磁铁提供电流时，分离的磁场从工件周围的分离位置发出。单独的磁场有助于形成控制处理室内等离子体分布的整个磁场。由于多个分离侧磁体的尺寸与工件尺寸无关，所以多个侧磁体可产生具有独立于工件尺寸的最大磁场强度的磁场。

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