专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07005014B2 Method of producing exchange coupling film and method of producing magnetoresistive sensor by using exchange coupling film 有权
公开(公告)号：US07005014B2
公开(公告)日：2006-02-28
申请号：US10271135
申请日：2002-10-15
申请人： Masamichi Saito , Naoya Hasegawa , Yosuke Ide , Kenichi Tanaka
发明人： Masamichi Saito , Naoya Hasegawa , Yosuke Ide , Kenichi Tanaka
IPC分类号： H01F1/00
CPC分类号： C23C14/5806 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C23C14/025 , C23C14/165 , C23C14/3492 , C23C28/021 , C23C28/023 , C23C28/028 , G01R33/093 , G11B5/3116 , G11B5/3903 , G11B2005/3996 , H01F10/123 , H01F10/3218 , H01F10/3268 , H01F41/302 , H01F41/304 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046
摘要： A laminate structure includes an antiferromagnetic layer, a pinned magnetic layer, and a seed layer contacting the antiferromagnetic layer on a side opposite to pinned magnetic layer. The seed layer is constituted mainly by face-centered cubic crystals with (111) planes preferentially oriented. The seed layer is preferably non-magnetic. Layers including the antiferromagnetic layer, a free magnetic layer, and layers therebetween, have (111) planes preferentially oriented.

2. 发明授权

US06879472B2 Exchange coupling film and electoresistive sensor using the same 有权
标题翻译：交换耦合膜和使用相同的电阻传感器
公开(公告)号：US06879472B2
公开(公告)日：2005-04-12
申请号：US10782654
申请日：2004-02-19
申请人： Masamichi Saito , Naoya Hasegawa , Yosuke Ide , Kenichi Tanaka
发明人： Masamichi Saito , Naoya Hasegawa , Yosuke Ide , Kenichi Tanaka
IPC分类号： G01R33/09 , G11B5/31 , G11B5/39 , G11B5/66 , H01F10/12 , H01F10/30 , H01F10/32 , H01L43/10
CPC分类号： H01F10/12 , B82Y25/00 , G01R33/093 , G11B5/31 , G11B5/3903 , G11B5/66 , H01F10/123 , H01F10/30 , H01F10/3218 , H01F10/3268 , H01L43/10 , Y10S428/90 , Y10T428/1121 , Y10T428/1143
摘要： An exchange coupling film has an antiferromagnetic layer made of an antiferromagnetic material containing an element X and Mn, where the element X is selected from the group of elements consisting of Pt, Pd, Ir, Rh, Ru, and Os, and combinations thereof. The antiferromagnetic layer has a region in which the ratio of the atomic percent of the element X to Mn increases in a direction towards said ferromagnetic layer. The crystalline structure of at least part of said antiferromagnetic layer has a CuAu0I type face-centered square ordered lattice.
摘要翻译：交换耦合膜具有由含有元素X和Mn的反铁磁材料制成的反铁磁层，其中元素X选自由Pt，Pd，Ir，Rh，Ru和Os组成的元素组，及其组合。反铁磁层具有其中元素X与Mn的原子百分比的比在朝向所述铁磁层的方向上增加的区域。所述反铁磁层的至少一部分的晶体结构具有CuAu0I型面心正方形有序晶格。

3. 发明授权

US06790541B2 Exchange coupling film and electroresistive sensor using the same 有权
标题翻译：交换耦合膜和电阻传感器使用它
公开(公告)号：US06790541B2
公开(公告)日：2004-09-14
申请号：US09834105
申请日：2001-04-11
申请人： Masamichi Saito , Naoya Hasegawa , Yosuke Ide , Kenichi Tanaka
发明人： Masamichi Saito , Naoya Hasegawa , Yosuke Ide , Kenichi Tanaka
IPC分类号： G11B533
CPC分类号： H01F10/12 , B82Y25/00 , G01R33/093 , G11B5/31 , G11B5/3903 , G11B5/66 , H01F10/123 , H01F10/30 , H01F10/3218 , H01F10/3268 , H01L43/10 , Y10S428/90 , Y10T428/1121 , Y10T428/1143
摘要： An exchange coupling film has an antiferromagnetic layer made of an antiferromagnetic material containing an element X and Mn, where the element X is selected from the group of elements consisting of Pt, Pd, Ir, Rh, Ru, and Os, and combinations thereof. The antiferromagnetic layer has a region in which the ratio of the atomic percent of the element X to Mn increases towards said ferromagnetic layer. The crystalline structure of at least part of said antiferromagnetic layer has a CuAu—I type face-centered square ordered lattice.
摘要翻译：交换耦合膜具有由含有元素X和Mn的反铁磁材料制成的反铁磁层，其中元素X选自由Pt，Pd，Ir，Rh，Ru和Os组成的元素组，及其组合。反铁磁层具有其中元素X与Mn的原子百分比之比朝向所述铁磁层增加的区域。所述反铁磁层的至少一部分的晶体结构具有CuAu-I型面心正方形有序晶格。

4. 发明授权

US06757962B2 Method for manufacturing exchange bias type magnetic field sensing element 失效
标题翻译：交换偏置型磁场感应元件的制造方法
公开(公告)号：US06757962B2
公开(公告)日：2004-07-06
申请号：US10013242
申请日：2001-12-10
申请人： Naoya Hasegawa , Eiji Umetsu , Masamichi Saito , Kenichi Tanaka , Yosuke Ide
发明人： Naoya Hasegawa , Eiji Umetsu , Masamichi Saito , Kenichi Tanaka , Yosuke Ide
IPC分类号： H04R3100
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3163 , G11B5/3903 , G11B5/3967 , H01F41/308 , H01F41/325 , Y10T29/49032 , Y10T29/49034 , Y10T29/49041 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048
摘要： In a method for manufacturing a magnetic field sensing element including an electrode layer overlying a second antiferrogmagnetic layer and a first free magnetic layer where the electrode layer exposes a portion of the second magnetic layer, a portion of the second antiferromagnetic layer not covered with the electrode layer and a portion of the first free magnetic layer are removed using the electrode layer as a mask after laminating each layer to form a bottom type spin-valve thin film magnetic element, thereby enabling the first free magnetic layer to be endowed with a sufficient exchange coupling magnetic field by substantially eliminating the tapered portion of the remaining second antiferromagnetic layer thereby enabling the magnetization of the second free magnetic layer to be put into a single domain state.
摘要翻译：在制造磁场感测元件的方法中，包括覆盖第二反铁磁层的电极层和第一自由磁性层，其中电极层暴露第二磁性层的一部分，第二反铁磁层的一部分未被电极覆盖在层叠各层之后，使用电极层作为掩模去除第一自由磁性层的一部分和第一自由磁性层的一部分，从而形成底部型自旋阀薄膜磁性元件，从而能够赋予第一自由磁性层充分的交换通过基本上消除剩余的第二反铁磁性层的锥形部分来耦合磁场，从而使得第二自由磁性层的磁化能够进入单一畴状态。

5. 发明授权

US06648985B2 Method of producing exchange coupling film and method of producing magnetoresistive sensor by using exchange coupling 失效
标题翻译：制造交换耦合膜的方法和使用交换耦合膜制造磁阻传感器的方法
公开(公告)号：US06648985B2
公开(公告)日：2003-11-18
申请号：US09833306
申请日：2001-04-11
申请人： Masamichi Saito , Naoya Hasegawa , Yosuke Ide , Kenichi Tanaka
发明人： Masamichi Saito , Naoya Hasegawa , Yosuke Ide , Kenichi Tanaka
IPC分类号： H01F100
CPC分类号： C23C14/5806 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C23C14/025 , C23C14/165 , C23C14/3492 , C23C28/021 , C23C28/023 , C23C28/028 , G01R33/093 , G11B5/3116 , G11B5/3903 , G11B2005/3996 , H01F10/123 , H01F10/3218 , H01F10/3268 , H01F41/302 , H01F41/304 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046
摘要： A laminate structure includes an antiferromagnetic layer, a pinned magnetic layer, and a seed layer contacting the antiferromagnetic layer on a side opposite to pinned magnetic layer. The seed layer is constituted mainly by face-centered cubic crystals with (111) planes preferentially oriented. The seed layer is preferably non-magnetic. Layers including the antiferromagnetic layer, a free magnetic layer, and layers therebetween, have (111) planes preferentially oriented.
摘要翻译：叠层结构包括反铁磁层，钉扎磁性层和与反铁磁性层在与固定磁性层相对的一侧上接触的种子层。种子层主要由具有（111）面优先取向的面心立方晶体构成。种子层优选是非磁性的。包括反铁磁性层，自由磁性层和层之间的层具有（111）面优先取向。

6. 发明授权

US06847508B2 Spin valve thin film magnetic element and thin film magnetic head 有权
标题翻译：旋转阀薄膜磁性元件和薄膜磁头
公开(公告)号：US06847508B2
公开(公告)日：2005-01-25
申请号：US09727180
申请日：2000-11-30
申请人： Kenichi Tanaka , Masamichi Saito , Yosuke Ide , Naoya Hasegawa , Yoshihiko Kakihara , Kenji Honda
发明人： Kenichi Tanaka , Masamichi Saito , Yosuke Ide , Naoya Hasegawa , Yoshihiko Kakihara , Kenji Honda
IPC分类号： G01R33/09 , G11B5/39 , H01F10/32 , H01F41/32 , H01L43/08 , G11B5/127 , G11B5/339
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996 , H01F10/324 , H01F10/3268 , H01F10/3272 , H01F41/325
摘要： The present invention provides a spin valve thin film magnetic element including a laminate in which an antiferromagnetic layer, a pinned magnetic layer provided in contact with the antiferromagnetic layer so that the magnetization direction is pinned by an exchange coupling magnetic field with the antiferromagnetic layer, a nonmagnetic conductive layer provided in contact with the pinned magnetic layer, a second free magnetic layer provided in contact with the nonmagnetic conductive layer, a nonmagnetic intermediate layer provided in contact with the second free magnetic layer, a first free magnetic layer provided in contact with the nonmagnetic intermediate layer and antiferromagnetically coupled with the second free magnetic layer to form a ferrimagnetic state together with the second free magnetic layer, and a backed layer provided in contact with the first free magnetic layer and having higher conductivity than the first free magnetic layer are laminated. The present invention also provides a magnetic head using the spin valve thin film magnetic element.
摘要翻译：本发明提供了一种自旋阀薄膜磁性元件，其包括层叠体，其中反铁磁层，与反铁磁性层接触的被钉扎的磁性层，使得磁化方向被与反铁磁性层的交换耦合磁场固定，设置成与被钉扎的磁性层接触的非磁性导电层，与非磁性导电层接触设置的第二自由磁性层，与第二自由磁性层接触设置的非磁性中间层，与第二自由磁性层接触的第一自由磁性层非磁性中间层与第二自由磁性层反铁磁耦合以与第二自由磁性层一起形成亚铁磁状态，并且与第一自由磁性层接触并具有比第一自由磁性层更高的导电性的背衬层被层压。本发明还提供一种使用自旋阀薄膜磁性元件的磁头。

7. 发明授权

US08009391B2 Magnetic sensing element and method for manufacturing the same 有权
标题翻译：磁传感元件及其制造方法
公开(公告)号：US08009391B2
公开(公告)日：2011-08-30
申请号：US12120887
申请日：2008-05-15
申请人： Kenichi Tanaka , Eiji Umetsu , Kazuaki Ikarashi , Kota Asatsuma , Norimasa Okanishi , Yoshihiro Nishiyama , Masamichi Saito , Yosuke Ide , Kazumasa Nishimura , Ryo Nakabayashi , Hidekazu Kobayashi , Akio Hanada , Naoya Hasegawa
发明人： Kenichi Tanaka , Eiji Umetsu , Kazuaki Ikarashi , Kota Asatsuma , Norimasa Okanishi , Yoshihiro Nishiyama , Masamichi Saito , Yosuke Ide , Kazumasa Nishimura , Ryo Nakabayashi , Hidekazu Kobayashi , Akio Hanada , Naoya Hasegawa
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3906 , G11B5/3909 , H01F10/30 , H01F10/3254 , H01F10/3277 , H01F41/302 , H01L43/08 , H01L43/12
摘要： An underlying layer is composed of Co—Fe—B that is an amorphous magnetic material. Thus, the upper surface of the underlying layer can be taken as a lower shield layer-side reference position for obtaining a gap length (GL) between upper and lower shields, resulting in a narrower gap than before. In addition, since the underlying layer has an amorphous structure, the underlying layer does not adversely affect the crystalline orientation of individual layers to be formed thereon, and the surface of the underlying layer has good planarizability. Accordingly, PW50 (half-amplitude pulse width) and SN ratio can be improved more than before without causing a decrease in rate of change in resistance (Δ R/R) or the like, thereby achieving a structure suitable for increasing recording density.
摘要翻译：下层由作为非晶磁性材料的Co-Fe-B组成。因此，可以将下层的上表面作为下屏蔽层侧参考位置，以获得上屏蔽和下屏蔽之间的间隙长度（GL），导致与之前的间隙较窄。此外，由于底层具有非晶结构，所以下层不会对要在其上形成的各层的结晶取向产生不利影响，并且下层的表面具有良好的平坦化性。因此，PW50（半幅度脉冲宽度）和SN比可以比以前更多地改善，而不会导致电阻变化率（＆Dgr; R / R）等的降低，从而实现适于提高记录密度的结构。

8. 发明申请

US20080074805A1 TUNNEL MAGNETORESISTIVE SENSOR IN WHICH AT LEAST PART OF PINNED LAYER IS COMPOSED OF CoFeB LAYER AND METHOD FOR MANUFACTURING THE TUNNEL MAGNETORESISTIVE SENSOR 有权
标题翻译：隧道磁体传感器，其中紧固层的至少一部分由CoFeB层组成，以及制造隧道磁传感器的方法
公开(公告)号：US20080074805A1
公开(公告)日：2008-03-27
申请号：US11857921
申请日：2007-09-19
申请人： Kazuaki Ikarashi , Eiji Umetsu , Kenichi Tanaka , Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Ryo Nakabayashi , Yoshihiro Nishiyama , Hidekazu Kobayashi , Naoya Hasegawa
发明人： Kazuaki Ikarashi , Eiji Umetsu , Kenichi Tanaka , Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Ryo Nakabayashi , Yoshihiro Nishiyama , Hidekazu Kobayashi , Naoya Hasegawa
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3909 , G11C11/16 , H01F10/132 , H01F10/3254 , H01F41/302 , H01L43/12
摘要： A tunnel magnetoresistive sensor includes a pinned magnetic layer, an insulating barrier layer formed of Mg—O, and a free magnetic layer. A barrier-layer-side magnetic sublayer constituting at least part of the pinned magnetic layer and being in contact with the insulating barrier layer includes a first magnetic region formed of CoFeB or FeB and a second magnetic region formed of CoFe or Fe. The second magnetic region is disposed between the first magnetic region and the insulating barrier layer.
摘要翻译：隧道磁阻传感器包括钉扎磁性层，由Mg-O形成的绝缘阻挡层和自由磁性层。构成被钉扎磁性层的至少一部分并与绝缘阻挡层接触的阻挡层侧磁性子层包括由CoFeB或FeB形成的第一磁性区域和由CoFe或Fe形成的第二磁性区域。第二磁性区域设置在第一磁性区域和绝缘阻挡层之间。

9. 发明授权

US06678128B2 Exchange coupling film and electroresistive sensor using the same 有权
标题翻译：交换耦合膜和电阻传感器使用它
公开(公告)号：US06678128B2
公开(公告)日：2004-01-13
申请号：US09833756
申请日：2001-04-11
申请人： Masamichi Saito , Naoya Hasegawa , Yosuke Ide , Kenichi Tanaka
发明人： Masamichi Saito , Naoya Hasegawa , Yosuke Ide , Kenichi Tanaka
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , H01F10/123 , H01F10/3268 , H01F41/302 , Y10T428/1171
摘要： An exchange coupling film has an antiferromagnetic layer, a pinned magnetic layer, and a seed layer provided on the side of the antiferromagnetic layer 4 opposite to the pinned magnetic layer. The seed layer has a crystalline structure constituted mainly by face-centered cubic crystals with (111) planes substantially aligned. The seed layer is preferably non-magnetic. A laminate structure including the antiferromagnetic layer and a free layer inclusive of the intervening layers have crystalline orientations with their (111) planes substantially aligned, so that large crystal grains and, hence, large ratio of resistance variation can be achieved.
摘要翻译：交换耦合膜具有反铁磁层，钉扎磁性层和设置在反铁磁层4的与被钉扎的磁性层相对的一侧的种子层。种子层具有主要由面心立方晶体构成的晶体结构，其中（111）面基本对准。种子层优选是非磁性的。包括反铁磁层和包含中间层的自由层的层压结构具有其（111）面基本上取向的结晶取向，从而可以获得大的晶粒，从而实现大的电阻变化比。

10. 发明授权

US06635366B2 Spin valve thin film magnetic element and thin film magnetic head 失效
标题翻译：旋转阀薄膜磁性元件和薄膜磁头
公开(公告)号：US06635366B2
公开(公告)日：2003-10-21
申请号：US09728069
申请日：2000-11-30
申请人： Masamichi Saito , Kenichi Tanaka , Yosuke Ide , Naoya Hasegawa
发明人： Masamichi Saito , Kenichi Tanaka , Yosuke Ide , Naoya Hasegawa
IPC分类号： G11B566
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B2005/3996 , H01F10/3268 , Y10S428/90 , Y10T428/1107 , Y10T428/1193 , Y10T428/24942
摘要： A spin valve thin film magnetic element is provided composed of an antiferromagnetic layer; a pinned magnetic layer, formed in contact with the antiferromagnetic layer, in which the direction of magnetization is pinned by an exchange coupling magnetic field with the antiferromagnetic layer; a nonmagnetic conductive layer in contact with the pinned magnetic layer; and a free magnetic layer in contact with the nonmagnetic conductive layer, wherein the free magnetic layer is composed of a nonmagnetic intermediate layer, and the first and second free magnetic layers holding the nonmagnetic intermediate layer therebetween; the first free magnetic layer and the second free magnetic layer are antiferromagnetically coupled to enter the ferrimagnetic state; and a resistivity of the first free magnetic layer in the side farther from the nonmagnetic intermediate layer is higher than a resistivity of the second free magnetic layer in the nonmagnetic intermediate layer side. According to the spin valve thin film magnetic element, it is possible to increase the detection sensitivity for the external magnetic field, to reduce the shunt loss of the sensing current, and to increase the rate of change in magnetoresistance.
摘要翻译：提供由反铁磁层构成的自旋阀薄膜磁性元件; 与反铁磁层接触形成的钉扎磁性层，其中磁化方向通过与反铁磁层的交换耦合磁场固定; 与被固定的磁性层接触的非磁性导电层; 以及与非磁性导电层接触的自由磁性层，其中所述自由磁性层由非磁性中间层构成，所述第一和第二自由磁性层在其间保持非磁性中间层; 第一自由磁性层和第二自由磁性层被反铁磁耦合以进入亚铁磁状态; 并且离非磁性中间层更远的一侧的第一自由磁性层的电阻率高于非磁性中间层侧的第二自由磁性层的电阻率。根据自旋阀薄膜磁性元件，可以增加外部磁场的检测灵敏度，减小感测电流的并联损耗，并增加磁阻的变化率。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式