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1. 发明授权

US09207293B2 Method for manufacturing a magnetic sensor 有权
标题翻译：磁传感器的制造方法
公开(公告)号：US09207293B2
公开(公告)日：2015-12-08
申请号：US13466887
申请日：2012-05-08
申请人： Hideto Ando , Shinji Sugihara , Fumihito Koike , Kota Asatsuma
发明人： Hideto Ando , Shinji Sugihara , Fumihito Koike , Kota Asatsuma
IPC分类号： G11B5/127 , H04R31/00 , G01R33/09 , B82Y25/00 , H01L43/08 , H01L43/12
CPC分类号： G01R33/093 , B82Y25/00 , H01L43/08 , H01L43/12
摘要： A magnetic sensor having no sensitivity differences between sensitivity axes, and an easy manufacturing method therefor are provided. The method includes a process of forming first stacked films for a magnetoresistive element on a substrate. This element has a sensitivity axis in a certain direction and includes a self-pinned ferromagnetic pinned layer in which first and second ferromagnetic films are antiferromagnetically coupled through an antiparallel coupling layer, a nonmagnetic intermediate layer, and a soft magnetic free layer. The method further includes a process of removing a region of the first stacked films from the substrate. The remaining region of the films includes at least a region to be left to form the element. The method furthermore includes a process of forming second stacked films for a magnetoresistive element, which has a sensitivity axis in a direction different from the certain direction and has the same structure, on the exposed substrate.
摘要翻译：提供了灵敏度轴之间没有灵敏度差的磁传感器及其制造方法。该方法包括在基板上形成用于磁阻元件的第一层叠膜的工艺。该元件在一定方向上具有灵敏度轴，并且包括自身固定的铁磁性钉扎层，其中第一和第二铁磁性膜通过反平行耦合层，非磁性中间层和软磁性层反铁磁耦合。该方法还包括从衬底去除第一层叠膜的区域的工艺。膜的剩余区域至少包括要形成元件的区域。该方法还包括在暴露的基板上形成具有与某一方向不同的方向并且具有相同结构的灵敏度轴的用于磁阻元件的第二叠层膜的工艺。

2. 发明申请

US20130009630A1 MAGNETIC DETECTION DEVICE, MAGNETIC SENSOR INCLUDING THE SAME, AND METHOD FOR MANUFACTURING MAGNETIC DETECTION DEVICE 审中-公开
标题翻译：磁性检测装置，包括它们的磁性传感器，以及用于制造磁性检测装置的方法
公开(公告)号：US20130009630A1
公开(公告)日：2013-01-10
申请号：US13464733
申请日：2012-05-04
申请人： Fumihito KOIKE , Kota ASATSUMA , Kazuya OMINATO
发明人： Fumihito KOIKE , Kota ASATSUMA , Kazuya OMINATO
IPC分类号： G01R33/10 , C23C14/34
CPC分类号： G01R33/093
摘要： A magnetic detection device includes a layered film including a self-pinned magnetic layer, a free magnetic layer, a nonmagnetic material layer disposed between the pinned magnetic layer and the free magnetic layer, and a top capping layer. The pinned magnetic layer includes a first magnetic layer, a second magnetic layer, and a nonmagnetic intermediate layer disposed therebetween. A first magnetization of the first magnetic layer is pinned in antiparallel with a second magnetization of the second magnetic layer. The capping layer is formed of tantalum, and an as-deposited thickness of the capping layer is 55 Å or more.
摘要翻译：磁检测装置包括：层叠膜，其包括自固位磁性层，自由磁性层，设置在钉扎磁性层和自由磁性层之间的非磁性材料层和顶盖层。钉扎磁性层包括第一磁性层，第二磁性层和设置在它们之间的非磁性中间层。第一磁性层的第一磁化被第二磁性层的第二磁化反平行地固定。覆盖层由钽形成，并且覆盖层的沉积厚度为55以上。

3. 发明授权

US08009391B2 Magnetic sensing element and method for manufacturing the same 有权
标题翻译：磁传感元件及其制造方法
公开(公告)号：US08009391B2
公开(公告)日：2011-08-30
申请号：US12120887
申请日：2008-05-15
申请人： Kenichi Tanaka , Eiji Umetsu , Kazuaki Ikarashi , Kota Asatsuma , Norimasa Okanishi , Yoshihiro Nishiyama , Masamichi Saito , Yosuke Ide , Kazumasa Nishimura , Ryo Nakabayashi , Hidekazu Kobayashi , Akio Hanada , Naoya Hasegawa
发明人： Kenichi Tanaka , Eiji Umetsu , Kazuaki Ikarashi , Kota Asatsuma , Norimasa Okanishi , Yoshihiro Nishiyama , Masamichi Saito , Yosuke Ide , Kazumasa Nishimura , Ryo Nakabayashi , Hidekazu Kobayashi , Akio Hanada , Naoya Hasegawa
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3906 , G11B5/3909 , H01F10/30 , H01F10/3254 , H01F10/3277 , H01F41/302 , H01L43/08 , H01L43/12
摘要： An underlying layer is composed of Co—Fe—B that is an amorphous magnetic material. Thus, the upper surface of the underlying layer can be taken as a lower shield layer-side reference position for obtaining a gap length (GL) between upper and lower shields, resulting in a narrower gap than before. In addition, since the underlying layer has an amorphous structure, the underlying layer does not adversely affect the crystalline orientation of individual layers to be formed thereon, and the surface of the underlying layer has good planarizability. Accordingly, PW50 (half-amplitude pulse width) and SN ratio can be improved more than before without causing a decrease in rate of change in resistance (Δ R/R) or the like, thereby achieving a structure suitable for increasing recording density.
摘要翻译：下层由作为非晶磁性材料的Co-Fe-B组成。因此，可以将下层的上表面作为下屏蔽层侧参考位置，以获得上屏蔽和下屏蔽之间的间隙长度（GL），导致与之前的间隙较窄。此外，由于底层具有非晶结构，所以下层不会对要在其上形成的各层的结晶取向产生不利影响，并且下层的表面具有良好的平坦化性。因此，PW50（半幅度脉冲宽度）和SN比可以比以前更多地改善，而不会导致电阻变化率（＆Dgr; R / R）等的降低，从而实现适于提高记录密度的结构。

4. 发明申请

US20080174921A1 TUNNEL TYPE MAGNETIC SENSOR HAVING FIXED MAGNETIC LAYER OF COMPOSITE STRUCTURE CONTAINING CoFeB FILM, AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：具有包含CoFeB膜的复合结构的固定磁性层的隧道式磁性传感器及其制造方法
公开(公告)号：US20080174921A1
公开(公告)日：2008-07-24
申请号：US11859412
申请日：2007-09-21
申请人： Kazuaki Ikarashi , Eiji Umetsu , Kenichi Tanaka , Kota Asatsuma
发明人： Kazuaki Ikarashi , Eiji Umetsu , Kenichi Tanaka , Kota Asatsuma
IPC分类号： G11B5/127
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3909 , G11C11/16 , H01F10/132 , H01F10/3254 , H01F10/3295 , H01F41/302 , H01L43/10 , H01L43/12
摘要： A second fixed magnetic layer is formed of a CoFeB layer of CoFeB and an interface layer of CoFe or Co provided in that order from the bottom. An insulating barrier layer composed of Al—O is formed on the second fixed magnetic layer. When a lamination structure composed of CoFeB/CoFe/Al—O is formed as described above, a low RA and a high rate of change in resistance (ΔR/R) can be simultaneously obtained. In addition, variations in RA and rate of change in resistance (ΔR/R) can be suppressed as compared to that in the past.
摘要翻译：第二固定磁性层由CoFeB的CoFeB层和从底部依次提供的CoFe或Co的界面层形成。在第二固定磁性层上形成由Al-O构成的绝缘阻挡层。当如上所述形成由CoFeB / CoFe / Al-O组成的层叠结构时，可以同时获得低的RA和高的电阻变化率（DeltaR / R）。此外，与过去相比，可以抑制RA和电阻变化率（DeltaR / R）的变化。

5. 发明申请

US20080285180A1 MAGNETIC SENSING ELEMENT AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：磁感应元件及其制造方法
公开(公告)号：US20080285180A1
公开(公告)日：2008-11-20
申请号：US12120887
申请日：2008-05-15
申请人： Kenichi Tanaka , Eiji Umetsu , Kazuaki Ikarashi , Kota Asatsuma , Norimasa Okanishi , Yoshihiro Nishiyama , Masamichi Saito , Yosuke Ide , Kazumasa Nishimura , Ryo Nakabayashi , Hidekazu Kobayashi , Akio Hanada , Naoya Hasegawa
发明人： Kenichi Tanaka , Eiji Umetsu , Kazuaki Ikarashi , Kota Asatsuma , Norimasa Okanishi , Yoshihiro Nishiyama , Masamichi Saito , Yosuke Ide , Kazumasa Nishimura , Ryo Nakabayashi , Hidekazu Kobayashi , Akio Hanada , Naoya Hasegawa
IPC分类号： G11B5/33 , B05D5/12
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3906 , G11B5/3909 , H01F10/30 , H01F10/3254 , H01F10/3277 , H01F41/302 , H01L43/08 , H01L43/12
摘要： An underlying layer is composed of Co—Fe—B that is an amorphous magnetic material. Thus, the upper surface of the underlying layer can be taken as a lower shield layer-side reference position for obtaining a gap length (GL) between upper and lower shields, resulting in a narrower gap than before. In addition, since the underlying layer has an amorphous structure, the underlying layer does not adversely affect the crystalline orientation of individual layers to be formed thereon, and the surface of the underlying layer has good planarizability. Accordingly, PW50 (half-amplitude pulse width) and SN ratio can be improved more than before without causing a decrease in rate of change in resistance (Δ R/R) or the like, thereby achieving a structure suitable for increasing recording density.
摘要翻译：下层由作为非晶磁性材料的Co-Fe-B组成。因此，可以将下层的上表面作为下屏蔽层侧参考位置，以获得上屏蔽和下屏蔽之间的间隙长度（GL），导致与之前的间隙较窄。此外，由于底层具有非晶结构，所以下层不会对要在其上形成的各层的结晶取向产生不利影响，并且下层的表面具有良好的平坦化性。因此，可以比以前更多地改善PW50（半幅度脉冲宽度）和SN比，而不会导致电阻变化率（ΔR/ R）等的降低，从而实现适于提高记录密度的结构。

6. 发明申请

US20120217962A1 MAGNETIC SENSOR AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：磁传感器及其制造方法
公开(公告)号：US20120217962A1
公开(公告)日：2012-08-30
申请号：US13466887
申请日：2012-05-08
申请人： Hideto ANDO , Shinji SUGIHARA , Fumihito KOIKE , Kota ASATSUMA
发明人： Hideto ANDO , Shinji SUGIHARA , Fumihito KOIKE , Kota ASATSUMA
IPC分类号： G01R33/09 , B05D3/00 , B05D5/00
CPC分类号： G01R33/093 , B82Y25/00 , H01L43/08 , H01L43/12
摘要： A magnetic sensor having no sensitivity differences between sensitivity axes, and an easy manufacturing method therefor are provided. The method includes a process of forming first stacked films for a magnetoresistive element on a substrate. This element has a sensitivity axis in a certain direction and includes a self-pinned ferromagnetic pinned layer in which first and second ferromagnetic films are antiferromagnetically coupled through an antiparallel coupling layer, a nonmagnetic intermediate layer, and a soft magnetic free layer. The method further includes a process of removing a region of the first stacked films from the substrate. The remaining region of the films includes at least a region to be left to form the element. The method furthermore includes a process of forming second stacked films for a magnetoresistive element, which has a sensitivity axis in a direction different from the certain direction and has the same structure, on the exposed substrate.
摘要翻译：提供了灵敏度轴之间没有灵敏度差的磁传感器及其制造方法。该方法包括在基板上形成用于磁阻元件的第一层叠膜的工艺。该元件在一定方向上具有灵敏度轴，并且包括自身固定的铁磁性钉扎层，其中第一和第二铁磁性膜通过反平行耦合层，非磁性中间层和软磁性层反铁磁耦合。该方法还包括从衬底去除第一层叠膜的区域的工艺。膜的剩余区域至少包括要形成元件的区域。该方法还包括在暴露的基板上形成具有与某一方向不同的方向并且具有相同结构的灵敏度轴的用于磁阻元件的第二叠层膜的工艺。

7. 发明申请

US20080151438A1 MAGNETORESISTIVE ELEMENT 审中-公开
标题翻译：磁电元件
公开(公告)号：US20080151438A1
公开(公告)日：2008-06-26
申请号：US11946266
申请日：2007-11-28
申请人： Kenichi Tanaka , Eiji Umetsu , Kazuaki Ikarashi , Kota Asatsuma
发明人： Kenichi Tanaka , Eiji Umetsu , Kazuaki Ikarashi , Kota Asatsuma
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y25/00 , H01F10/30 , H01F10/3254 , H01F10/3272 , H01F10/3295
摘要： The invention provides a magnetoresistive element including a seed layer having a flat surface, which makes it possible to improve the flatness of all of the elements. A seed layer is formed in a two-layer structure of a first seed layer that is formed on a lower shield layer and a second seed layer that is formed underneath an anti-ferromagnetic layer, and the second seed layer is formed of ruthenium (Ru). According to this structure, the flatness of the surface of the seed layer is improved, which makes it possible to improve the flatness of interfaces between layers of an element formed on the seed layer. As a result, it is possible to manufacture a magnetoresistive element having a high dielectric breakdown voltage and high operational reliability.
摘要翻译：本发明提供了包括具有平坦表面的种子层的磁阻元件，这使得可以提高所有元件的平坦度。种子层形成在形成在反铁磁层下面的下屏蔽层和第二种子层上的第一籽晶层的两层结构中，第二种子层由钌（Ru ）。根据该结构，种子层的表面的平坦度提高，这使得可以提高形成在种子层上的元件的层之间的界面的平坦度。结果，可以制造具有高绝缘击穿电压和高操作可靠性的磁阻元件。

8. 发明申请

US20120032673A1 MAGNETIC SENSOR 审中-公开
标题翻译：磁传感器
公开(公告)号：US20120032673A1
公开(公告)日：2012-02-09
申请号：US13274258
申请日：2011-10-14
申请人： Shuji MAEKAWA , Kota ASATSUMA , Fumihito KOIKE , Hideto ANDO
发明人： Shuji MAEKAWA , Kota ASATSUMA , Fumihito KOIKE , Hideto ANDO
IPC分类号： G01R33/02
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G01R33/098
摘要： First magnetoresistive effect elements and second magnetoresistive effect elements and are formed on the same substrate. A pinned magnetic layer of each of the first magnetoresistive effect elements has a three-layer laminated ferrimagnetic structure including magnetic layers. A pinned magnetic layer of each of the second magnetoresistive effect elements has a two-layer laminated ferrimagnetic structure including magnetic layers. The magnetization direction of the third magnetic layer of each of the magnetoresistive effect elements is antiparallel to the magnetization direction of the second magnetic layer of each of the second magnetoresistive effect elements.
摘要翻译：第一磁阻效应元件和第二磁阻效应元件并形成在相同的衬底上。每个第一磁阻效应元件的钉扎磁性层具有包括磁性层的三层叠层铁磁结构。每个第二磁阻效应元件的钉扎磁性层具有包括磁性层的双层叠层铁磁结构。每个磁阻效应元件的第三磁性层的磁化方向与每个第二磁阻效应元件的第二磁性层的磁化方向反平行。

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