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    • 7. 发明授权
    • Thin film piezoelectric element
    • 薄膜压电元件
    • US06396200B2
    • 2002-05-28
    • US09381167
    • 1999-09-16
    • Koichiro MisuTsutomu NagatsukaShusou Wadaka
    • Koichiro MisuTsutomu NagatsukaShusou Wadaka
    • H01L4108
    • H03H9/174H03H9/02133H03H9/177H03H9/562H03H9/564
    • A film bulk acoustic wave device, comprising: a substrate; a bottom electrode formed on one surface of the substrate; a piezoelectric film formed on the bottom electrode; and a first top electrode formed on the piezoelectric film, further comprises a second top electrode having a larger mass load than the first top electrode, and formed on the first top electrode on the piezoelectric film when viewed from the center of the first top electrode, wherein the piezoelectric film has a high-band-cut-off-type dispersion characteristic. The cut-off frequency of a second top electrode portion piezoelectric film having a large mass load can be lower than the cut-off frequency of a first top electrode portion piezoelectric film, to thereby trap the energy of the acoustic wave in a region of the first top electrode portion side, so that good performance may be feasible.
    • 一种薄膜体声波装置,包括:基板; 形成在所述基板的一个表面上的底部电极; 形成在底部电极上的压电膜; 以及形成在所述压电膜上的第一顶部电极,还包括具有比所述第一顶部电极大的质量负载的第二顶部电极,并且当从所述第一顶部电极的中心观察时,形成在所述压电膜上的所述第一顶部电极上, 其中压电薄膜具有高截止型色散特性。具有大质量负载的第二顶部电极部分压电薄膜的截止频率可以低于第一顶部电极的截止频率 从而将声波的能量捕获在第一顶部电极部分侧的区域中,使得良好的性能可能是可行的。