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    • 4. 发明授权
    • Memory device using micro vacuum tube
    • 内存装置采用微型真空管
    • US5576986A
    • 1996-11-19
    • US322491
    • 1994-10-14
    • Kazuo MatsuzakiYoshiyuki SakaiYuichi UranoHidekatsu KurodaAkira Amano
    • Kazuo MatsuzakiYoshiyuki SakaiYuichi UranoHidekatsu KurodaAkira Amano
    • G11C11/30G11C13/02G11C11/00
    • G11C13/0014B82Y10/00G11C13/02
    • A highly reliable memory device with excellent heat resistance that can be used in any environment utilizes a chemical change to define a state transition. The memory device includes a micro vacuum tube structure having a recess portion formed on an upper face of a quartz substrate, a cold cathode having many comb-tooth like tips extending from the quartz substrate over to one side of the recess portion, a rectangular control electrode disposed on the side of the cold cathode at the bottom of the recess portion, an anode extending from the quartz substrate over to the other side of the recess portion and facing opposed to the cold cathode, and a sealing member for vacuum sealing a space inside the recess portion 11a. N.sub.2 and O.sub.2 gases are enclosed in a space under the pressure of 0.2 mmHg. By changing the control electrode voltage, energy of accelerated electrons is changed: NO is produced at the control voltage of 17 eV, NO2 at 23 eV and the product gases dissociate to N.sub.2 and O.sub.2 by glow discharge at the control voltage higher than 23 eV. The chemical reaction is used to indicate the storage of information.
    • 可以在任何环境中使用的具有优异耐热性的高度可靠的存储器件利用化学变化来定义状态转变。 存储装置包括具有形成在石英基板的上表面上的凹部的微型真空管结构,具有从石英基板延伸到凹部的一侧的许多梳齿形尖端的冷阴极,矩形控制 设置在所述凹部的底部的所述冷阴极侧的电极,从所述石英衬底延伸到所述凹部的另一侧并与所述冷阴极相对的阳极,以及用于真空密封空间的密封构件 在凹部11a内。 N2和O2气体在0.2mmHg的压力下封闭在空间中。 通过改变控制电极电压,改变加速电子的能量:在17eV的控制电压,23eV下的NO2产生NO,并且在高于23eV的控制电压下,产物气体通过辉光放电解离成N2和O2。 化学反应用于指示信息的存储。
    • 8. 发明授权
    • Intermittent coating system and intermittent coating method
    • 间歇涂布系统和间歇涂布方法
    • US06455105B1
    • 2002-09-24
    • US09148490
    • 1998-09-04
    • Yoshiyuki SakaiTatsuya YoshikawaAkinori Ide
    • Yoshiyuki SakaiTatsuya YoshikawaAkinori Ide
    • B05D500
    • H01M4/139B05C5/0258B05C9/04B05C11/10B05D1/265H01M10/0404H01M10/058
    • An upper die unit (37) and a lower die unit (39) are disposed in opposition, with a gap, to a substrate (31) being conveyed, and provided with coating agent supply flow paths (97, 99) which have inlet paths (103, 105) for a coating agent to flow in and delivery ports (101, 102) for delivering the coating agent to coat the substrate (31) therewith. An accumulation piece (119, 121) installed in a flow path part (97b, 99b) of each die unit (37, 39) moves in the direction in which it goes away from the flow path part (97b, 99b), drawing in the coating agent, dwelling the delivery of the coating agent from the delivery port (101, 102), forming a non-coated part (F), and repeats a reciprocating action, repeating a coating and non-coating. An elastic plate (355) on a way of the coating agent supply flow path (339) is displaced in accordance with advance/retreat actions of a piston member (363) caused by a rotation of a cam (387).
    • 上模单元(37)和下模单元(39)与输送的基板(31)相对设置,并且设置有涂料剂供给流路(97,99),其具有入口路径 (103,105),用于涂覆剂流入和输送端口(101,102),用于输送涂覆剂以涂覆基底(31)。 安装在每个模具单元(37,39)的流路部(97b,99b)中的堆积片(119,121)沿着从流路部(97b,99b)离开的方向移动, 所述涂布剂从所述输送口(101,102)中排出所述涂布剂,形成未涂覆部分(F),并且重复往复运动,重复涂覆和不涂覆。 根据由凸轮(387)的旋转引起的活塞构件(363)的前进/后退动作,在涂料剂供给流路(339)的路径上的弹性板(355)发生位移。
    • 10. 发明授权
    • Method of separating semiconductor wafer with dielectrics
    • 用电介质分离半导体晶片的方法
    • US5576241A
    • 1996-11-19
    • US455173
    • 1995-05-31
    • Yoshiyuki Sakai
    • Yoshiyuki Sakai
    • H01L21/76H01L21/762H04L21/76
    • H01L21/76264H01L21/76286Y10S148/05
    • A method for separating a joined substrate type wafer, which wafer is composed of a pair of semiconductor substrates joined through an insulation film, utilizes dielectrics through simple processing steps. Trenches for separating a semiconductor substrate with dielectrics are dug from the surface of the substrate and a dielectrics film is deposited on the surface of the substrate including the trenches. Then poly-crystalline silicon under layer is grown by CVD method to a thickness of about 0.5 .mu.m. Thereafter, a poly-crystalline silicon filler layer, which is deep enough to fill the trenches, is grown over the underlying poly-crystalline silicon under layer, followed by selectively removing the two poly-crystalline silicon layers from the surface of the substrate excluding the regions inside the trenches. An alternative embodiment contemplates depositing a second dielectrics film interposed between the poly-crystalline silicon under layer and the poly-crystalline silicon filler layer. The overall process substantially increases the insulation between the various semiconductor regions while increasing the smoothness of the dielectrics film by controlling the grain size of the poly-crystalline silicon matrix.
    • 用于分离由通过绝缘膜连接的一对半导体基板构成的晶片的接合基板型晶片的方法通过简单的处理步骤来利用电介质。 用于从电介质表面分离半导体衬底的沟槽从衬底的表面被挖出,并且在包括沟槽的衬底的表面上沉积电介质膜。 然后通过CVD法生长多晶硅层,厚度约为0.5μm。 此后,将深度足以填充沟槽的多晶硅填料层生长在下面的多晶硅下层下面,然后从衬底的表面除去两个多晶硅层 沟渠内的区域。 替代实施例考虑沉积介于多晶硅下层和多晶硅填料层之间的第二电介质膜。 整个过程通过控制多晶硅基质的晶粒尺寸,大大增加了各种半导体区域之间的绝缘,同时增加了电介质膜的平滑度。