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1. 发明授权

US5576986A Memory device using micro vacuum tube 失效
标题翻译：内存装置采用微型真空管
公开(公告)号：US5576986A
公开(公告)日：1996-11-19
申请号：US322491
申请日：1994-10-14
申请人： Kazuo Matsuzaki , Yoshiyuki Sakai , Yuichi Urano , Hidekatsu Kuroda , Akira Amano
发明人： Kazuo Matsuzaki , Yoshiyuki Sakai , Yuichi Urano , Hidekatsu Kuroda , Akira Amano
IPC分类号： G11C11/30 , G11C13/02 , G11C11/00
CPC分类号： G11C13/0014 , B82Y10/00 , G11C13/02
摘要： A highly reliable memory device with excellent heat resistance that can be used in any environment utilizes a chemical change to define a state transition. The memory device includes a micro vacuum tube structure having a recess portion formed on an upper face of a quartz substrate, a cold cathode having many comb-tooth like tips extending from the quartz substrate over to one side of the recess portion, a rectangular control electrode disposed on the side of the cold cathode at the bottom of the recess portion, an anode extending from the quartz substrate over to the other side of the recess portion and facing opposed to the cold cathode, and a sealing member for vacuum sealing a space inside the recess portion 11a. N.sub.2 and O.sub.2 gases are enclosed in a space under the pressure of 0.2 mmHg. By changing the control electrode voltage, energy of accelerated electrons is changed: NO is produced at the control voltage of 17 eV, NO2 at 23 eV and the product gases dissociate to N.sub.2 and O.sub.2 by glow discharge at the control voltage higher than 23 eV. The chemical reaction is used to indicate the storage of information.
摘要翻译：可以在任何环境中使用的具有优异耐热性的高度可靠的存储器件利用化学变化来定义状态转变。存储装置包括具有形成在石英基板的上表面上的凹部的微型真空管结构，具有从石英基板延伸到凹部的一侧的许多梳齿形尖端的冷阴极，矩形控制设置在所述凹部的底部的所述冷阴极侧的电极，从所述石英衬底延伸到所述凹部的另一侧并与所述冷阴极相对的阳极，以及用于真空密封空间的密封构件在凹部11a内。 N2和O2气体在0.2mmHg的压力下封闭在空间中。通过改变控制电极电压，改变加速电子的能量：在17eV的控制电压，23eV下的NO2产生NO，并且在高于23eV的控制电压下，产物气体通过辉光放电解离成N2和O2。化学反应用于指示信息的存储。

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