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1. 发明授权

US06731864B1 RECORDING METHOD/APPARATUS, REPRODUCING METHOD/APPARATUS, RECORDING/REPRODUCING METHOD/APPARATUS, AND DISK-SHAPED RECORDING MEDIUM CAPABLE OF INCREASING DATA TRANSFER RATE AND CAPABLE OF READILY MANAGING ADDRESSES 失效
标题翻译：记录方法/装置，再现方法/装置，记录/再现方法/装置以及能够增加数据传送速率和能够编写管理地址的盘形记录介质
公开(公告)号：US06731864B1
公开(公告)日：2004-05-04
申请号：US08772888
申请日：1996-12-24
申请人： Yoshiyuki Ito , Toshiyuki Ishii
发明人： Yoshiyuki Ito , Toshiyuki Ishii
IPC分类号： H04N5926
CPC分类号： G11B20/10 , G11B2020/10981 , H04N5/781 , H04N5/9261
摘要： Picture image data having high image quality is recorded in a disk-shaped recording medium such as a hard disk and a removable disk. A recording apparatus is arranged by a first unit for recording image data with respect to a disk-shaped recording medium in which an outer peripheral sided region thereof is recordable/reproduceable at a higher rate than that of an inner peripheral sided region thereof, and a second unit for designating an attribute of image data recorded in the disk-shaped recording medium. When the second unit designates image data having a large data amount per unit time, the first unit records the image data having the large data amount per unit time in the inner peripheral sided region of the disk-shaped recording medium, whereas when the second unit designates image data having a small data amount per unit time, the first unit records the image data having the small data amount per unit time in the inner peripheral sided region of the disk-shaped recording medium.
摘要翻译：具有高图像质量的图像数据被记录在诸如硬盘和可移动盘的盘形记录介质中。记录装置由第一单元布置，用于相对于其外周侧区域以比其内周侧区域更高的速度记录/再现的盘形记录介质记录图像数据，并且用于指定记录在盘形记录介质中的图像数据的属性的第二单元。当第二单元指定每单位时间具有大数据量的图像数据时，第一单元将每单位时间具有大数据量的图像数据记录在盘形记录介质的内周侧区域中，而当第二单元指定每单位时间具有小数据量的图像数据，第一单元将每单位时间具有小数据量的图像数据记录在盘形记录介质的内周侧区域中。

2. 发明授权

US10370465B2 Propylene homopolymer for stress-resistant molded article, composition containing the polymer, and stress-resistant molded articles obtained therefrom 有权
公开(公告)号：US10370465B2
公开(公告)日：2019-08-06
申请号：US12448983
申请日：2008-01-17
申请人： Keita Itakura , Toshiyuki Ishii , Rikuo Onishi , Satoshi Hashizume
发明人： Keita Itakura , Toshiyuki Ishii , Rikuo Onishi , Satoshi Hashizume
IPC分类号： C08L23/12 , C08F110/06 , C08F4/659 , C08K7/14 , C08L23/16
摘要： Propylene polymers and propylene resin compositions containing the polymers are used as molded articles used under stress for a long period such as automotive parts, housing parts, home appliance parts and electric power tool parts. Stress-resistant molded articles of the invention are obtained from these materials. A propylene homopolymer (A) satisfies the following requirements (1) to (3), and a polypropylene resin composition contains the propylene homopolymer (A). (1) The ratio (Mw/Mn) of weight average molecular weight (Mw) to number average molecular weight (Mn) according to GPC is in the range of 1.2 to 3.5. (2) Mn is in the range of 35,000 to 400,000. (3) The content of components soluble in o-dichlorobenzene at 90° C. is not more than 4 wt %.

3. 发明授权

US09216444B2 Reactor cleaning apparatus 有权
公开(公告)号：US09216444B2
公开(公告)日：2015-12-22
申请号：US13067400
申请日：2011-05-31
申请人： Toshihide Endoh , Masayuki Tebakari , Toshiyuki Ishii , Masaaki Sakaguchi
发明人： Toshihide Endoh , Masayuki Tebakari , Toshiyuki Ishii , Masaaki Sakaguchi
IPC分类号： B08B9/28 , B08B3/02 , B08B3/04 , B08B3/08 , B08B9/34 , C23C14/56 , C23C16/44
CPC分类号： B08B9/28 , B08B3/02 , B08B3/04 , B08B3/08 , B08B9/34 , C23C14/564 , C23C16/4407
摘要： In a reactor cleaning apparatus 1 which cleans an inner wall surface 72 of a reactor 70 which generates polycrystalline silicon, a bell jar of the reactor 70 has a dual structure, a through hole 11 is formed along a vertical direction at a central portion of a substantially disc-like tray 10 placed in a horizontal state, a flange portion 13 in which an opening edge of the reactor 70 is placed is formed at an outer peripheral portion of the tray 10, a shaft 20 is provided through the through hole 11 of the tray 10 so as to be rotatable and movable in the vertical direction, a nozzle device 50 which sprays a cleaning water at high pressure in three-dimensional directions is provided at an upper end of the shaft 20, a drive mechanism 30 which rotates the shaft 20 and moves the shaft in the vertical direction is provided at a base end of the shaft 20, and steam piping 62 capable of supplying the steam within the bell jar of the reactor 70 is provided.

4. 发明授权

US08652256B2 Manufacturing apparatus of polycrystalline silicon 有权
标题翻译：多晶硅制造装置
公开(公告)号：US08652256B2
公开(公告)日：2014-02-18
申请号：US12555085
申请日：2009-09-08
申请人： Toshihide Endoh , Masayuki Tebakari , Toshiyuki Ishii , Masaaki Sakaguchi
发明人： Toshihide Endoh , Masayuki Tebakari , Toshiyuki Ishii , Masaaki Sakaguchi
IPC分类号： C30B25/00
CPC分类号： C01B33/035
摘要： A manufacturing apparatus of polycrystalline silicon products polycrystalline silicon by depositing on a surface of a silicon seed rod by supplying raw-material gas to the heated silicon seed rod provided vertically in a reactor, includes: an electrode which holds the silicon seed rod and is made of carbon; an electrode holder which holds the electrode, and cooled by coolant medium flowing therein, wherein the electrode includes: a seed rod holding member which holds the silicon seed rod; a heat cap which is provided between the seed rod holding member and the electrode holder; and a cap protector having a ring-like plate shape, which covers an upper surface of the heat cap, and in which a through hole penetrating the lower-end portion of the seed rod holding member is formed.
摘要翻译：多晶硅产品多晶硅的制造装置通过在反应器中垂直设置的加热硅晶棒中提供原料气体而在硅晶棒的表面上沉积，包括：保持硅种子棒并制成的电极的碳; 电极保持器，其保持电极，并由其中流动的冷却介质冷却，其中所述电极包括：保持所述硅种子棒的籽棒保持构件; 设置在种棒保持构件和电极保持器之间的加热盖; 以及覆盖所述加热盖的上表面的具有环状板状的盖保护器，并且形成有贯穿所述种棒保持部件的下端部的通孔。

5. 发明授权

US08529844B2 Apparatus for producing trichlorosilane and method for producing trichlorosilane 有权
标题翻译：三氯硅烷的制造装置及三氯硅烷的制造方法
公开(公告)号：US08529844B2
公开(公告)日：2013-09-10
申请号：US13345864
申请日：2012-01-09
申请人： Toshiyuki Ishii , Eiji Komai , Harumi Satoh
发明人： Toshiyuki Ishii , Eiji Komai , Harumi Satoh
IPC分类号： B01J19/00 , C01B33/107
CPC分类号： C01B33/107 , B01J19/006 , B01J19/1812 , B01J19/1843 , B01J19/2415 , B01J19/244 , B01J2219/00087 , B01J2219/00159 , B01J2219/00765 , B01J2219/00779 , Y02E60/324
摘要： An apparatus for producing trichlorosilane includes: a decomposing furnace, a heating unit heating the inside of the decomposing furnace, a raw material supplying tube for guiding polymer and hydrogen chloride to be guided to the inner bottom portion of the decomposing furnace, and a gas discharge tube for discharging reaction gas from the top of the reaction chamber provided between the outer peripheral surface of the raw material supplying tube and the inner peripheral surface of the decomposing furnace, a fin, which guides a fluid mixture of the polymer and the hydrogen chloride supplied from the lower end opening of the raw material supplying tube to be agitated and rise upward in the reaction chamber, and is formed integrally with at least one of the outer peripheral surface of the raw material supplying tube and the inner peripheral surface of the decomposing furnace.
摘要翻译：三氯硅烷的制造装置具备：分解炉，加热分解炉内部的加热单元，将导向聚合物的原料供给管和被引导到分解炉的内底部的氯化氢，以及气体排出用于从设置在原料供给管的外周面和分解炉的内周面之间的反应室顶部排出反应气体的管，引导聚合物和供给的氯化氢的流体混合物的翅片从原料供给管的下端开口在反应室内被搅拌上升，与原料供给管的外周面和分解炉的内周面中的至少一个一体形成。

6. 发明授权

US08433134B2 Image processing device and image processing method for generation of color correction condition 有权
标题翻译：用于产生色彩校正条件的图像处理装置和图像处理方法
公开(公告)号：US08433134B2
公开(公告)日：2013-04-30
申请号：US12902070
申请日：2010-10-11
申请人： Toshiyuki Ishii
发明人： Toshiyuki Ishii
IPC分类号： G06K9/00 , H04N5/228
CPC分类号： G06T5/001 , G06T11/001 , H04N1/6086
摘要： Included are determining a position of a pixel serving as an extraction subject by using first image data photographed under a first light source; determining an extraction range corresponding to the determined position, by using a color value of the pixel at the determined position and a color value of a pixel at a peripheral position around the determined position in the first image data; calculating a first representative color value from the first image data and a second representative color value from second image data photographed under a second light source, on the basis of the position of the pixel serving as the extraction subject and the extraction range; and generating a color correction condition for converting a color value depending on the first light source into a color value depending on the second light source.
摘要翻译：包括通过使用在第一光源下拍摄的第一图像数据来确定用作提取对象的像素的位置; 通过使用所确定的位置处的像素的颜色值和在所述第一图像数据中所确定的位置周围的周边位置处的像素的颜色值来确定与所确定的位置相对应的提取范围; 基于用作提取对象的像素的位置和提取范围，从第一图像数据计算第一代表色值和来自第二光源下拍摄的第二图像数据的第二代表色值; 以及生成用于将依据第一光源的颜色值转换为根据第二光源的颜色值的颜色校正条件。

7. 发明授权

US08043660B2 Method for manufacturing polycrystalline silicon 有权
标题翻译：多晶硅制造方法
公开(公告)号：US08043660B2
公开(公告)日：2011-10-25
申请号：US12292793
申请日：2008-11-26
申请人： Toshihide Endoh , Masayuki Tebakari , Toshiyuki Ishii , Masaaki Sakaguchi , Naoki Hatakeyama
发明人： Toshihide Endoh , Masayuki Tebakari , Toshiyuki Ishii , Masaaki Sakaguchi , Naoki Hatakeyama
IPC分类号： C23C16/00
CPC分类号： C01B33/325
摘要： A method for manufacturing polycrystalline silicon with high quality by effectively preventing undesired shape such as giving an rough surface to silicon rods or an irregularity in diameter of the silicon rods. The method for manufacturing polycrystalline silicon includes: an initial stabilizing step of deposition wherein a velocity of ejecting the raw material gas from the gas ejection ports is gradually increased; the shaping step wherein first the ejection velocity is increased at a rate higher than that in the stabilizing step and then the ejection velocity is gradually increased at a rate lower than the previous increasing rate; and a growing step wherein, after the shaping step, the ejection velocity is made slower than that at the end of the shaping step until the end of the deposition.
摘要翻译：通过有效地防止对硅棒的粗糙表面或硅棒的直径不规则的不期望的形状来制造高质量的多晶硅的方法。制造多晶硅的方法包括：沉积的初始稳定步骤，其中从气体喷射口排出原料气体的速度逐渐增加; 成形步骤首先以高于稳定步骤的速度增加喷射速度，然后喷射速度以比先前增加速率低的速率逐渐增加; 以及生长步骤，其中在成形步骤之后，使喷射速度比成型步骤结束时的喷射速度慢，直到沉积结束。

8. 发明申请

US20100034722A1 Apparatus for producing trichlorosilane and method for producing trichlorosilane 有权
标题翻译：三氯硅烷的制造装置及三氯硅烷的制造方法
公开(公告)号：US20100034722A1
公开(公告)日：2010-02-11
申请号：US12461148
申请日：2009-08-03
申请人： Toshiyuki Ishii , Eiji Komai , Harumi Satoh
发明人： Toshiyuki Ishii , Eiji Komai , Harumi Satoh
IPC分类号： C01B33/107 , B01J8/00
CPC分类号： C01B33/107 , B01J19/006 , B01J19/1812 , B01J19/1843 , B01J19/2415 , B01J19/244 , B01J2219/00087 , B01J2219/00159 , B01J2219/00765 , B01J2219/00779 , Y02E60/324
摘要： An apparatus for producing trichlorosilane includes: a decomposing furnace, a heating unit heating the inside of the decomposing furnace, a raw material supplying tube for guiding polymer and hydrogen chloride to be guided to the inner bottom portion of the decomposing furnace, and a gas discharge tube for discharging reaction gas from the top of the reaction chamber provided between the outer peripheral surface of the raw material supplying tube and the inner peripheral surface of the decomposing furnace, a fin, which guides a fluid mixture of the polymer and the hydrogen chloride supplied from the lower end opening of the raw material supplying tube to be agitated and rise upward in the reaction chamber, and is formed integrally with at least one of the outer peripheral surface of the raw material supplying tube and the inner peripheral surface of the decomposing furnace.
摘要翻译：三氯硅烷的制造装置具备：分解炉，加热分解炉内部的加热单元，将导向聚合物的原料供给管和被引导到分解炉的内底部的氯化氢，以及气体排出用于从设置在原料供给管的外周面和分解炉的内周面之间的反应室顶部排出反应气体的管，引导聚合物和供给的氯化氢的流体混合物的翅片从原料供给管的下端开口在反应室内被搅拌上升，与原料供给管的外周面和分解炉的内周面中的至少一个一体形成。

9. 发明申请

US20090314207A1 APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICON 有权
标题翻译：用于生产多晶硅的装置
公开(公告)号：US20090314207A1
公开(公告)日：2009-12-24
申请号：US12486926
申请日：2009-06-18
申请人： Toshihide Endoh , Masayuki Tebakari , Toshiyuki Ishii , Masaaki Sakaguchi
发明人： Toshihide Endoh , Masayuki Tebakari , Toshiyuki Ishii , Masaaki Sakaguchi
IPC分类号： C23C16/44
CPC分类号： C01B33/035 , C23C16/24 , C23C16/4411 , C23C16/458
摘要： An apparatus for producing polycrystalline silicon which heats a silicon seed rod in a reactor to which a raw material gas is supplied, and deposits polycrystalline silicon on the surface of the silicon seed rod, includes an electrode extending in a vertical direction to hold the silicon seed rod, an electrode holder having a cooling flow passage circulating a cooling medium formed therein, and inserted into a through-hole formed in a bottom plate of the reactor to hold the electrode, and an annular insulating material arranged between an inner peripheral surface of the through-hole and an outer peripheral surface of the electrode holder to electrically insulate the bottom plate and the electrode holder from each other.
摘要翻译：一种制造多晶硅的装置，其加热供应原料气体的反应器中的硅种子棒，并且在硅籽晶棒的表面上沉积多晶硅，包括沿垂直方向延伸以保持硅晶种的电极杆，电极保持器，其具有使形成在其中的冷却介质循环的冷却流路，并插入到形成在反应器的底板中的通孔中以保持电极;以及环形绝缘材料，其布置在通孔和电极保持器的外周表面，以使底板和电极保持器彼此电绝缘。

10. 发明申请

US20080110429A1 Resin Composition For Intake System Part For Internal Combustion Engine And Intake System Part 有权
标题翻译：用于内燃机和进气系统部件的进气系统部件的树脂组合物
公开(公告)号：US20080110429A1
公开(公告)日：2008-05-15
申请号：US11667163
申请日：2006-10-06
申请人： Sueki Sugawara , Toshiyuki Ishii , Kazuyuki Iida , Taketoshi Matsumoto , Kunimoto Sugiyama , Makoto Nakamichi
发明人： Sueki Sugawara , Toshiyuki Ishii , Kazuyuki Iida , Taketoshi Matsumoto , Kunimoto Sugiyama , Makoto Nakamichi
IPC分类号： F02M35/10 , C08K3/04
CPC分类号： C08L51/06 , C08K3/04 , C08K7/06 , C08L23/10 , C08L23/12 , C08L51/006 , F02M35/10321 , F02M35/10347 , C08L2666/24 , C08L2666/02 , C08L2666/04
摘要： A resin composition for a component of an air intake system of an internal combustion engine including the following components (1), (2), and (3): [Components] (1) polypropylene-based resin: 67 to 89 wt % (2) acid-modified polypropylene-based resin: 1 to 3 wt % (3) carbon fiber and graphite powder: 10 to 30 wt %, the relationship between the thickness and the resonance frequency of a test specimen formed of the resin composition satisfying the following expression: [Relationship between thickness and resonance frequency]resonance frequency (Hz)≧(98.5×thickness (mm))+15.
摘要翻译：含有以下组分（1），（2）和（3）的内燃机的进气系统的组分的树脂组合物：[组分]（1）聚丙烯基树脂：67至89重量％ 2）酸改性聚丙烯类树脂：1〜3重量％（3）碳纤维和石墨粉末：由树脂组合物形成的试样的厚度与共振频率之间的关系为10〜30重量％以下表达式：<？in-line-formula description =“In-line Formulas”end =“lead”？> [厚度与谐振频率之间的关系]共振频率（Hz）> =（98.5x厚度（mm））+ 15。 <？in-line-formula description =“In-line Formulas”end =“tail”？>

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