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1. 发明授权

US08282902B2 Apparatus for producing trichlorosilane, and method for producing trichlorosilane 有权
标题翻译：三氯硅烷的制造装置及三氯硅烷的制造方法
公开(公告)号：US08282902B2
公开(公告)日：2012-10-09
申请号：US12472397
申请日：2009-05-27
申请人： Masayuki Tebakari
发明人： Masayuki Tebakari
IPC分类号： C01B33/107
CPC分类号： C23C16/24 , C01B33/035 , C01B33/10731
摘要： This apparatus for producing trichlorosilane, includes a reactor provided with gas inlets and gas outlets, a plurality of silicon seed rods held in the reactor, a heating apparatus that is provided in the reactor and heats the silicon seed rods, and a raw material gas supply system that is connected to the gas inlets and capable of selecting and supplying one of a first raw material gas for depositing polycrystalline silicon which contains trichlorosilane and hydrogen gas and a second raw material gas for producing trichlorosilane which contains silicon tetrachloride and hydrogen gas, wherein when the raw material gas supply system supplies the second raw material gas into the reactor, the silicon tetrachloride and hydrogen gas are reacted to produce a reaction product gas containing trichlorosilane.
摘要翻译：该三氯硅烷的制造装置具备：设置有气体导入口和气体出口的反应器，保持在反应器内的多个硅种棒，设置在反应器内的加热装置，加热硅种子棒，以及原料气体供给装置系统，其连接到气体入口并且能够选择和供应用于沉积含有三氯硅烷和氢气的多晶硅的第一原料气体和用于生产含有四氯化硅和氢气的三氯硅烷的第二原料气体，其中当原料气体供给系统将第二原料气体供给到反应器中，使四氯化硅和氢气反应，生成含有三氯硅烷的反应产物气体。

2. 发明申请

US20090165704A1 Silicon seed rod assembly of polycrystalline silicon, method of forming the same, polycrystalline silicon producing apparatus, and method of producing polycrystalline silicon 审中-公开
标题翻译：多晶硅的硅晶棒组件，其形成方法，多晶硅制造装置以及多晶硅的制造方法
公开(公告)号：US20090165704A1
公开(公告)日：2009-07-02
申请号：US12318270
申请日：2008-12-23
申请人： Masayuki Tebakari , Naoki Hatakeyama
发明人： Masayuki Tebakari , Naoki Hatakeyama
IPC分类号： C30B25/10 , C30B28/12
CPC分类号： C23C16/02 , C01B33/035 , C23C16/24 , Y10T29/49826 , Y10T117/10
摘要： A silicon seed rod assembly used for producing polycrystalline silicon by means of a vapor deposition method includes two rod-shape silicon seed rods; and a silicon connection member bridging the silicon seed rods, wherein an opening-end peripheral edge of a through-hole on one side surface of the connection member is sharper than that on the other side surface thereof, and an opening-end peripheral surface on the one side surface thereof is formed into a flat contact surface disposed in a direction perpendicular to a perforation direction of the through-hole, and wherein a upper end portion of the silicon seed rod is inserted into the through-hole so that the contact surface comes into contact with the support surface of the silicon seed rod.
摘要翻译：用于通过气相沉积法制造多晶硅的硅晶棒组件包括两个棒状硅种棒; 以及硅连接构件，其连接所述硅种子棒，其中，所述连接构件的一个侧面上的通孔的开口端周缘比所述连接构件的一个侧面上的开口端周缘更尖锐，其一侧表面形成为沿垂直于通孔的穿孔方向的方向设置的平坦接触表面，并且其中将硅种棒的上端部插入到通孔中，使得接触表面与硅种子棒的支撑表面接触。

3. 发明申请

US20090136408A1 Polycrystalline silicon manufacturing apparatus and manufacturing method 有权
标题翻译：多晶硅制造装置及其制造方法
公开(公告)号：US20090136408A1
公开(公告)日：2009-05-28
申请号：US12292602
申请日：2008-11-21
申请人： Toshihide Endoh , Masayuki Tebakari , Toshiyuki Ishii , Masaaki Sakaguchi , Naoki Hatakeyama
发明人： Toshihide Endoh , Masayuki Tebakari , Toshiyuki Ishii , Masaaki Sakaguchi , Naoki Hatakeyama
IPC分类号： C01B33/021 , C23C16/24
CPC分类号： C01B33/035
摘要： A polycrystalline silicon manufacturing apparatus efficiently produces high-quality polycrystalline silicon. There is provided a polycrystalline silicon manufacturing apparatus, in which a plurality of gas supplying ports 6A for ejecting raw gas upward in a reactor 1 and gas exhausting ports 7 for exhausting exhaust gas after a reaction are provided on an inner bottom of the reactor 1 in which a plurality of silicon seed rods 4 are stood, the silicon seed rods 4 are heated and the polycrystalline silicon is deposited from the raw gas on the surfaces. The apparatus includes gas distributing tubes 9 that are respectively connected to the gas supplying ports 6A and respectively supply the raw gas to the gas supplying ports 6A, valves 21 that are provided on at least the gas distributing tubes connected to the gas supplying ports 6A adjacent to a center of the reactor 1 and open or close conduit lines of the gas distributing tubes 9, and a valve controlling device 22 that is connected to the valves 21 and controls the conduit lines to be closed for a predetermined time at an early stage of the reaction.
摘要翻译：多晶硅制造装置有效地生产高质量的多晶硅。提供了一种多晶硅制造装置，其中在反应器1的内底部上设置有用于将反应器1中的原料气体向上喷射的多个气体供给口6A和用于在反应器之后排出废气的排气口7 多个硅种子棒4被放置，硅籽晶棒4被加热，多晶硅从表面上的原料气体沉积出来。该装置包括气体分配管9，其分别连接到气体供给口6A并分别将原料气体供应到气体供给口6A，至少设置在与相邻的气体供给口6A连接的气体分配管上的阀21 连接到反应器1的中心，并且打开或关闭气体分配管9的导管线;以及阀控制装置22，其连接到阀21，并且控制导管线在预定时间内早期阶段反应。

4. 发明授权

US09216444B2 Reactor cleaning apparatus 有权
公开(公告)号：US09216444B2
公开(公告)日：2015-12-22
申请号：US13067400
申请日：2011-05-31
申请人： Toshihide Endoh , Masayuki Tebakari , Toshiyuki Ishii , Masaaki Sakaguchi
发明人： Toshihide Endoh , Masayuki Tebakari , Toshiyuki Ishii , Masaaki Sakaguchi
IPC分类号： B08B9/28 , B08B3/02 , B08B3/04 , B08B3/08 , B08B9/34 , C23C14/56 , C23C16/44
CPC分类号： B08B9/28 , B08B3/02 , B08B3/04 , B08B3/08 , B08B9/34 , C23C14/564 , C23C16/4407
摘要： In a reactor cleaning apparatus 1 which cleans an inner wall surface 72 of a reactor 70 which generates polycrystalline silicon, a bell jar of the reactor 70 has a dual structure, a through hole 11 is formed along a vertical direction at a central portion of a substantially disc-like tray 10 placed in a horizontal state, a flange portion 13 in which an opening edge of the reactor 70 is placed is formed at an outer peripheral portion of the tray 10, a shaft 20 is provided through the through hole 11 of the tray 10 so as to be rotatable and movable in the vertical direction, a nozzle device 50 which sprays a cleaning water at high pressure in three-dimensional directions is provided at an upper end of the shaft 20, a drive mechanism 30 which rotates the shaft 20 and moves the shaft in the vertical direction is provided at a base end of the shaft 20, and steam piping 62 capable of supplying the steam within the bell jar of the reactor 70 is provided.

5. 发明授权

US08652256B2 Manufacturing apparatus of polycrystalline silicon 有权
标题翻译：多晶硅制造装置
公开(公告)号：US08652256B2
公开(公告)日：2014-02-18
申请号：US12555085
申请日：2009-09-08
申请人： Toshihide Endoh , Masayuki Tebakari , Toshiyuki Ishii , Masaaki Sakaguchi
发明人： Toshihide Endoh , Masayuki Tebakari , Toshiyuki Ishii , Masaaki Sakaguchi
IPC分类号： C30B25/00
CPC分类号： C01B33/035
摘要： A manufacturing apparatus of polycrystalline silicon products polycrystalline silicon by depositing on a surface of a silicon seed rod by supplying raw-material gas to the heated silicon seed rod provided vertically in a reactor, includes: an electrode which holds the silicon seed rod and is made of carbon; an electrode holder which holds the electrode, and cooled by coolant medium flowing therein, wherein the electrode includes: a seed rod holding member which holds the silicon seed rod; a heat cap which is provided between the seed rod holding member and the electrode holder; and a cap protector having a ring-like plate shape, which covers an upper surface of the heat cap, and in which a through hole penetrating the lower-end portion of the seed rod holding member is formed.
摘要翻译：多晶硅产品多晶硅的制造装置通过在反应器中垂直设置的加热硅晶棒中提供原料气体而在硅晶棒的表面上沉积，包括：保持硅种子棒并制成的电极的碳; 电极保持器，其保持电极，并由其中流动的冷却介质冷却，其中所述电极包括：保持所述硅种子棒的籽棒保持构件; 设置在种棒保持构件和电极保持器之间的加热盖; 以及覆盖所述加热盖的上表面的具有环状板状的盖保护器，并且形成有贯穿所述种棒保持部件的下端部的通孔。

6. 发明授权

US08043660B2 Method for manufacturing polycrystalline silicon 有权
标题翻译：多晶硅制造方法
公开(公告)号：US08043660B2
公开(公告)日：2011-10-25
申请号：US12292793
申请日：2008-11-26
申请人： Toshihide Endoh , Masayuki Tebakari , Toshiyuki Ishii , Masaaki Sakaguchi , Naoki Hatakeyama
发明人： Toshihide Endoh , Masayuki Tebakari , Toshiyuki Ishii , Masaaki Sakaguchi , Naoki Hatakeyama
IPC分类号： C23C16/00
CPC分类号： C01B33/325
摘要： A method for manufacturing polycrystalline silicon with high quality by effectively preventing undesired shape such as giving an rough surface to silicon rods or an irregularity in diameter of the silicon rods. The method for manufacturing polycrystalline silicon includes: an initial stabilizing step of deposition wherein a velocity of ejecting the raw material gas from the gas ejection ports is gradually increased; the shaping step wherein first the ejection velocity is increased at a rate higher than that in the stabilizing step and then the ejection velocity is gradually increased at a rate lower than the previous increasing rate; and a growing step wherein, after the shaping step, the ejection velocity is made slower than that at the end of the shaping step until the end of the deposition.
摘要翻译：通过有效地防止对硅棒的粗糙表面或硅棒的直径不规则的不期望的形状来制造高质量的多晶硅的方法。制造多晶硅的方法包括：沉积的初始稳定步骤，其中从气体喷射口排出原料气体的速度逐渐增加; 成形步骤首先以高于稳定步骤的速度增加喷射速度，然后喷射速度以比先前增加速率低的速率逐渐增加; 以及生长步骤，其中在成形步骤之后，使喷射速度比成型步骤结束时的喷射速度慢，直到沉积结束。

7. 发明申请

US20090314207A1 APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICON 有权
标题翻译：用于生产多晶硅的装置
公开(公告)号：US20090314207A1
公开(公告)日：2009-12-24
申请号：US12486926
申请日：2009-06-18
申请人： Toshihide Endoh , Masayuki Tebakari , Toshiyuki Ishii , Masaaki Sakaguchi
发明人： Toshihide Endoh , Masayuki Tebakari , Toshiyuki Ishii , Masaaki Sakaguchi
IPC分类号： C23C16/44
CPC分类号： C01B33/035 , C23C16/24 , C23C16/4411 , C23C16/458
摘要： An apparatus for producing polycrystalline silicon which heats a silicon seed rod in a reactor to which a raw material gas is supplied, and deposits polycrystalline silicon on the surface of the silicon seed rod, includes an electrode extending in a vertical direction to hold the silicon seed rod, an electrode holder having a cooling flow passage circulating a cooling medium formed therein, and inserted into a through-hole formed in a bottom plate of the reactor to hold the electrode, and an annular insulating material arranged between an inner peripheral surface of the through-hole and an outer peripheral surface of the electrode holder to electrically insulate the bottom plate and the electrode holder from each other.
摘要翻译：一种制造多晶硅的装置，其加热供应原料气体的反应器中的硅种子棒，并且在硅籽晶棒的表面上沉积多晶硅，包括沿垂直方向延伸以保持硅晶种的电极杆，电极保持器，其具有使形成在其中的冷却介质循环的冷却流路，并插入到形成在反应器的底板中的通孔中以保持电极;以及环形绝缘材料，其布置在通孔和电极保持器的外周表面，以使底板和电极保持器彼此电绝缘。

8. 发明授权

US07975709B2 Reactor cleaning apparatus 有权
标题翻译：反应器清洗装置
公开(公告)号：US07975709B2
公开(公告)日：2011-07-12
申请号：US12320272
申请日：2009-01-22
申请人： Toshihide Endoh , Masayuki Tebakari , Toshiyuki Ishii , Masaaki Sakaguchi
发明人： Toshihide Endoh , Masayuki Tebakari , Toshiyuki Ishii , Masaaki Sakaguchi
IPC分类号： B08B3/02
CPC分类号： B08B9/28 , B08B3/02 , B08B3/04 , B08B3/08 , B08B9/34 , C23C14/564 , C23C16/4407
摘要： In a reactor cleaning apparatus 1 which cleans an inner wall surface 72 of a reactor 70 which generates polycrystalline silicon, a bell jar of the reactor 70 has a dual structure, a through hole 11 is formed along a vertical direction at a central portion of a substantially disc-like tray 10 placed in a horizontal state, a flange portion 13 in which an opening edge of the reactor 70 is placed is formed at an outer peripheral portion of the tray 10, a shaft 20 is provided through the through hole 11 of the tray 10 so as to be rotatable and movable in the vertical direction, a nozzle device 50 which sprays a cleaning water at high pressure in three-dimensional directions is provided at an upper end of the shaft 20, a drive mechanism 30 which rotates the shaft 20 and moves the shaft in the vertical direction is provided at a base end of the shaft 20, and steam piping 62 capable of supplying the steam within the bell jar of the reactor 70 is provided.
摘要翻译：在清洗产生多晶硅的反应器70的内壁面72的反应器清洗装置1中，反应器70的钟罩具有双重结构，在垂直方向形成有贯通孔11，放置在水平状态的大致圆盘状的托盘10，在托盘10的外周部形成有设置有反应器70的开口边缘的凸缘部13，通过贯通孔11设置轴20，托盘10能够沿垂直方向旋转并且可移动;在轴20的上端设置有在三维方向上以高压喷射清洗水的喷嘴装置50，驱动机构30使在轴20的基端部设置轴20并且在竖直方向上移动轴，并且提供能够在反应器70的钟罩内供应蒸汽的蒸汽管道62。

9. 发明授权

US07875349B2 Polymer inactivation method for polycrystalline silicon manufacturing device 有权
标题翻译：多晶硅制造装置的聚合物灭活方法
公开(公告)号：US07875349B2
公开(公告)日：2011-01-25
申请号：US12382899
申请日：2009-03-26
申请人： Toshihide Endoh , Masayuki Tebakari , Toshiyuki Ishii , Masaaki Sakaguchi
发明人： Toshihide Endoh , Masayuki Tebakari , Toshiyuki Ishii , Masaaki Sakaguchi
IPC分类号： B32B15/04
CPC分类号： C01B33/035 , Y10T428/2822
摘要： A polymer inactivation method for a polycrystalline silicon manufacturing device, wherein humidified gas such as water vapor and humidified nitrogen gas is supplied into a reacting furnace for manufacturing polycrystalline silicon to hydrolyze polymers adhered to an inner surface of the reacting furnace. It is preferable that a furnace wall of the reacting furnace is heated when the humidified gas is supplied.
摘要翻译：多晶硅制造装置的聚合物灭活方法，其中将诸如水蒸汽和加湿氮气的加湿气体供应到用于制造多晶硅的反应炉中，以水解附着在反应炉内表面上的聚合物。当加湿加压气体时，优选加热反应炉的炉壁。

10. 发明申请

US20100229796A1 Manufacturing apparatus of polycrystalline silicon 有权
标题翻译：多晶硅制造装置
公开(公告)号：US20100229796A1
公开(公告)日：2010-09-16
申请号：US12659359
申请日：2010-03-05
申请人： Toshihide Endoh , Masayuki Tebakari , Toshiyuki Ishii , Masaaki Sakaguchi
发明人： Toshihide Endoh , Masayuki Tebakari , Toshiyuki Ishii , Masaaki Sakaguchi
IPC分类号： C23C16/24
CPC分类号： C23C16/24 , C01B33/035 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1016
摘要： An apparatus for manufacturing polycrystalline silicon whereby raw-material gas is supplied to one or more heated silicon seed rods provided vertically in a reactor so as to deposit the polycrystalline silicon on a surface of the silicon seed rod, having a seed rod holding member, made of conductive material, having a holding hole in which a lower end of the silicon seed rod is inserted, the holding hole having a horizontal cross-sectional shape with at least two corners, and the holding member having a screw hole extending from the outer surface of the seed rod holding member to at least the holding hole and formed at the location of at least two corners of the holding hole; and a fixing screw which fixes the silicon seed rod and is threaded through at least one of the screw holes.
摘要翻译：一种用于制造多晶硅的装置，其中将原料气体供应到在反应器中垂直设置的一个或多个加热的硅种子棒，以便将多晶硅沉积在具有种子棒保持构件的硅种子棒的表面上，的导电材料，其具有插入硅棒的下端的保持孔，所述保持孔具有至少两个角的水平横截面形状，并且所述保持构件具有从所述外表面延伸的螺纹孔将所述种子棒保持构件的至少所述保持孔保持在所述保持孔的至少两个角部的位置，以及固定螺钉，其固定硅籽晶杆并穿过至少一个螺钉孔。

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