专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5349873A Force transducer and pressure detecting circuit using the same 失效
标题翻译：力传感器和压力检测电路使用相同
公开(公告)号：US5349873A
公开(公告)日：1994-09-27
申请号：US92480
申请日：1993-07-16
申请人： Yoshiteru Omura , Kouji Tsukada , Yutaka Nonomura , Takeshi Morikawa
发明人： Yoshiteru Omura , Kouji Tsukada , Yutaka Nonomura , Takeshi Morikawa
IPC分类号： G01L1/16 , G01L1/18 , G01L9/00 , G01L9/06 , G01L9/08 , G01L23/10 , G01L23/22 , G01L9/04 , G01L1/75
CPC分类号： G01L9/0052 , G01L1/18 , G01L9/0058 , G01L9/065 , Y10S73/04
摘要： A force transducer comprising: a silicon semiconductor having a crystal face of (110); a pair of input-output shared electrodes mounted on the crystal face of the silicon semiconductor in mutual confronting relationship in a direction of of the crystal or a direction equivalent to the direction of ; a force transmission block connected to the crystal face of the silicon semiconductor for transmitting a force W perpendicularly to the crystal face; and a support bed supporting the silicon semiconductor and connected to the silicon semiconductor at a face opposite to the crystal face to which the force transmission block is connected, whereby a voltage corresponding to the force W and to be measured is output from the input-output shared electrodes when the force W is applied perpendicularly to the crystal face of the silicon semiconductor via the force transmission block while a current flows in the silicon semiconductor via the input-output shared electrodes.
摘要翻译：一种力传感器，包括：具有（110）的晶面的硅半导体; 在晶体的<110>方向或与<110>方向相等的方向上以相互面对的关系安装在硅半导体的晶面上的一对输入输出共享电极; 连接到所述硅半导体的所述晶面的力传递块，用于垂直于所述晶体面传递力W; 以及支撑硅半导体并且在与与所述力传递块连接的晶面相对的面处与所述硅半导体连接的支撑床，由此从所述输入输出输出与所述力W对应的电压当电流经由输入 - 输出共享电极在硅半导体中流动时，通过力传递块垂直于硅半导体的晶面施加力W时的共用电极。

2. 发明授权

US5341688A Force transducer 失效
标题翻译：力传感器
公开(公告)号：US5341688A
公开(公告)日：1994-08-30
申请号：US995826
申请日：1992-12-23
申请人： Takeshi Morikawa , Kouji Tsukada , Yutaka Nonomura , Yoshiteru Omura
发明人： Takeshi Morikawa , Kouji Tsukada , Yutaka Nonomura , Yoshiteru Omura
IPC分类号： G01L1/18 , H01L29/84 , G01L1/16
CPC分类号： G01L1/18
摘要： A force transducer comprises: an N-type silicon single crystal having a crystal face of (110) on which a force is applied; a pair of first electrodes and a pair of second electrodes mounted on the crystal face of (110) of the N-type silicon single crystal, the first electrodes facing in a direction angularly spaced by 135 degrees from a direction of of the crystal, and the second electrodes being angularly spaced by 90 degrees from the first electrodes, one of the pairs of first and second electrodes being adapted to serve as input electrodes and the other being adapted to serve as output electrodes; a force transmission block connected to the crystal face of (110) of the N-type silicon single crystal for transmitting the force perpendicularly to the crystal face; and a support bed supporting the N-type silicon single crystal and connected to the N-type silicon single crystal at a face opposite to the crystal face to which the force transmission block is connected, the support bed being in the form of a planar structure having a horizontal cross-sectional shape with a short axis and a long axis.
摘要翻译：力传感器包括：具有施加力的晶体面（110）的N型硅单晶; 一对第一电极和一对第二电极，其安装在所述N型硅单晶的（110）的晶面上，所述第一电极面向与所述N型单晶的（001）的方向成角度地间隔135度的方向并且所述第二电极与所述第一电极成角度地间隔90度，所述一对第一和第二电极中的一个适于用作输入电极，另一个适于用作输出电极; 连接到所述N型硅单晶的（110）的晶面的力传递块，用于垂直于所述晶面传递所述力; 以及支撑N型硅单晶并且在与所述力传递块连接的晶面相对的面上与所述N型硅单晶相连的支撑床，所述支撑床为平面结构具有短轴和长轴的水平横截面形状。

3. 发明授权

US08816451B2 MEMS structure and manufacturing method thereof 有权
标题翻译： MEMS结构及其制造方法
公开(公告)号：US08816451B2
公开(公告)日：2014-08-26
申请号：US13035186
申请日：2011-02-25
申请人： Hirofumi Funabashi , Yutaka Nonomura , Yoshiyuki Hata , Motohiro Fujiyoshi , Teruhisa Akashi , Yoshiteru Omura
发明人： Hirofumi Funabashi , Yutaka Nonomura , Yoshiyuki Hata , Motohiro Fujiyoshi , Teruhisa Akashi , Yoshiteru Omura
IPC分类号： H01L29/84 , H01L21/02
CPC分类号： H01L21/02 , H01L29/84
摘要： In a MEMS structure, a first trench which penetrates the first layer, the second layer and the third layer is formed, and a second trench which penetrates the fifth layer, the forth layer and the third layer is formed. The first trench forms a first part of an outline of the movable portion in a view along the stacked direction. The second trench forms a second part of the outline of the movable portion in the view along the stacked direction. At least a part of the first trench overlaps with the first extending portion in the view along the stacked direction.
摘要翻译：在MEMS结构中，形成贯穿第一层，第二层和第三层的第一沟槽，形成贯穿第五层，第四层和第三层的第二沟槽。第一沟槽沿着堆叠的方向形成可动部分的轮廓的第一部分。第二沟槽沿着堆叠方向在视图中形成可动部分的轮廓的第二部分。第一沟槽的至少一部分沿着堆叠方向在视图中与第一延伸部分重叠。

4. 发明授权

US6158280A Detector for detecting angular velocities about perpendicular axes 有权
标题翻译：用于检测关于垂直轴的角速度的检测器
公开(公告)号：US6158280A
公开(公告)日：2000-12-12
申请号：US218151
申请日：1998-12-22
申请人： Yutaka Nonomura , Motohiro Fujiyoshi , Yoshiteru Omura , Norio Fujitsuka
发明人： Yutaka Nonomura , Motohiro Fujiyoshi , Yoshiteru Omura , Norio Fujitsuka
IPC分类号： G01C19/56 , G01P9/04
CPC分类号： G01C19/5719
摘要： A detector has first and second excitation beams extending along X-axis and Y-axis directions. These beams are fixed to a substrate via an intersecting portion. Mass portions are disposed at free ends of the beams. Sensing electrodes are disposed at the central portions of the mass portions to face the mass portions. By electrostatic force generated between the excitation electrodes and the mass portions, two mass portions vibrate in the Y-axis direction, while the remaining two mass portions vibrate in the X-axis direction. When an angular velocity .OMEGA..sub.x acts about the X axis, Z-axis Coriolis forces F.sub.1a and F.sub.1b act on the mass portions that are vibrating in the Y-axis direction. When an angular velocity .OMEGA..sub.y acts about the Y axis, Z-axis Coriolis forces F.sub.2a and F.sub.2b act on the mass portions that are vibrating in the X-axis direction. These vibrations are detected by the sensing electrodes in order to detect the angular velocities .OMEGA..sub.x and .OMEGA..sub.y.
摘要翻译：检测器具有沿X轴和Y轴方向延伸的第一和第二激发光束。这些光束经由交叉部分固定在基板上。质量部分设置在梁的自由端。传感电极设置在质量部分的中心部分以面对质量部分。通过在激励电极和质量部分之间产生的静电力，两个质量部分在Y轴方向上振动，而剩余的两个质量部分在X轴方向上振动。当角速度OMEGA x围绕X轴作用时，Z轴科里奥利力F1a和F1b作用在沿Y轴方向振动的质量部分上。当角速度OMEGA y围绕Y轴作用时，Z轴科里奥利力F2a和F2b作用在沿X轴方向振动的质量部分上。这些振动由感测电极检测，以便检测角速度OMEGA x和OMEGA y。

5. 发明授权

US06843132B2 Pressure sensor 有权
标题翻译：压力传感器
公开(公告)号：US06843132B2
公开(公告)日：2005-01-18
申请号：US10845196
申请日：2004-05-14
申请人： Kentaro Mizuno , Kouji Tsukada , Yoshiteru Omura , Shoji Hashimoto , Jiro Sakata
发明人： Kentaro Mizuno , Kouji Tsukada , Yoshiteru Omura , Shoji Hashimoto , Jiro Sakata
IPC分类号： G01L19/04 , G01L7/08 , G01L23/08
CPC分类号： G01L23/10 , G01L23/18
摘要： A pressure sensor is realized wherein output error of sensor element can be reduced even in the case where the pressure sensor is utilized in high temperature conditions. A pressure sensor is provided with a housing 20, a diaphragm 24 that partitions the interior and the exterior of the housing 20, a sensor element 54 provided within the housing 20, output value of the sensor element 54 varying in accordance with force exerted thereupon, and a force transmitting rod 52 provided within the housing, the force transmitting rod 52 moving downwardly when a pressure is exerted upon the diaphragm 24, the force transmitting rod 52 thereby exerting force upon the sensor element 54. The diaphragm 24 has a central region 26 contacting with the force transmitting rod 52, and a surrounding region 27 surrounding the periphery of the central region 26 and connecting the central region 26 with the housing 20. The surrounding region 27, viewed cross-sectionally along the radius, is V-shaped or U-shaped, and cancels thermal expansion.
摘要翻译：实现了压力传感器，即使在高温条件下使用压力传感器的情况下也能够降低传感器元件的输出误差。压力传感器设置有壳体20，隔离壳体20的内部和外部的隔膜24，设置在壳体20内的传感器元件54，传感器元件54的输出值根据施加在其上的力而变化，以及设置在壳体内的力传递杆52，当施加压力施加到隔膜24上时，力传递杆52向下移动，力传递杆52从而对传感器元件54施加力。隔膜24具有中心区域26 与力传递杆52接触，以及围绕中心区域26的周边并将中心区域26与壳体20连接的周围区域27.沿着半径横截面地观察的周边区域27为V形或 U型，取消热膨胀。

6. 发明授权

US4833929A Force transducer 失效
标题翻译：力传感器
公开(公告)号：US4833929A
公开(公告)日：1989-05-30
申请号：US224764
申请日：1988-07-27
申请人： Yoshiteru Omura , Kazuyoshi Kawaguchi , Kouji Tsukada , Susumu Sugiyama , Sadayuki Hayashi , Masayuki Matsui
发明人： Yoshiteru Omura , Kazuyoshi Kawaguchi , Kouji Tsukada , Susumu Sugiyama , Sadayuki Hayashi , Masayuki Matsui
IPC分类号： H01L29/84 , G01L1/16 , G01L1/18
CPC分类号： G01L1/16 , G01L1/18
摘要： A force transducer for detecting compression. The force transducer comprises an Si single crystal so formed as to have a crystal face of {110} as the surface to which compression is applied; a first pair of opposing electrodes provided on the Si single crystal in the direction having an angle of 45 degrees with the direction of of the Si single crystal and a second pair of opposing electrodes provided on the Si single crystal in the direction having an angle of 45 degrees with the direction of of the Si single crystal; a seat which is bonded to the crystal face of {110} of the Si single crystal and which transmits the compression substantially uniformly to the crystal face; and a base which is bonded to the surface of the Si single crystal opposite to the surface bonded with the seat and which supports the Si single crystal. The force transducer has a simple structure as a whole and is capable of detecting compression with accuracy.

7. 发明授权

US06865953B2 Force sensors 有权
标题翻译：力传感器
公开(公告)号：US06865953B2
公开(公告)日：2005-03-15
申请号：US10387461
申请日：2003-03-14
申请人： Kouji Tsukada , Jiro Sakata , Kentaro Mizuno , Yoshiteru Omura , Yumi Masuoka , Shoji Hashimoto
发明人： Kouji Tsukada , Jiro Sakata , Kentaro Mizuno , Yoshiteru Omura , Yumi Masuoka , Shoji Hashimoto
IPC分类号： G01L1/18 , G01L1/22 , G01L9/00 , G01L23/10 , H01L29/84 , G01B7/16 , H01L41/04
CPC分类号： G01L23/10 , G01L1/18 , G01L1/2262 , G01L9/0052
摘要： A pressure sensor has a housing having a first block and a second block provided therein. A force to be measured applies upon a upper face of the first block. An upper face of the second block makes contact with a base face of the first block. Piezoresistive elements are formed within the base face of the first block. The resistance values of these piezoresistive elements change as contacting pressure between the first block and the second block changes. A first electrode is formed on an upper face of the first block. A second electrode is formed on a base face of the second block. Electrical characteristics between the first electrode and the second electrode change following change in the contacting pressure between the first block and the second block.
摘要翻译：压力传感器具有壳体，其具有设置在其中的第一块和第二块。要测量的力应用于第一块的上表面。第二块的上表面与第一块的基面接触。压阻元件形成在第一块的基面内。当第一块和第二块之间的接触压力改变时，这些压阻元件的电阻值改变。第一电极形成在第一块的上表面上。第二电极形成在第二块的基面上。第一电极和第二电极之间的电特性随着第一块和第二块之间的接触压力的变化而改变。

8. 发明授权

US4993266A Semiconductor pressure transducer 失效
标题翻译：半导体压力传感器
公开(公告)号：US4993266A
公开(公告)日：1991-02-19
申请号：US384817
申请日：1989-07-25
申请人： Yoshiteru Omura , Kouji Tsukada , Masaharu Takeuchi , Sadayuki Hayashi , Sanae Tokumitsu
发明人： Yoshiteru Omura , Kouji Tsukada , Masaharu Takeuchi , Sadayuki Hayashi , Sanae Tokumitsu
IPC分类号： G01L1/18 , G01L9/00
CPC分类号： G01L19/142 , G01L1/18 , G01L19/0084 , G01L19/0645 , G01L19/147 , G01L9/0042 , G01L9/0052 , Y10S73/04
摘要： A semiconductor pressure transducer for detecting a pressure applied to a diaphragm. The pressure transducer comprises a diaphragm and a pressure detector including an Si single crystal which is so formed as to have a crystal face of {110 } as the surface to which a compression force is applied, and which is attached to the pressure detector such that the crystal face is parallel to the diaphragm, a first pair of opposing electrodes provided on the Si single crystal in the direction having an angle of 45 degrees with the direction of on the crystal face of {110 } and a second pair of opposing electrodes provided on the Si single crystal in the direction having an angle of 45 degrees with the direction of of the Si single crystal, either of the first or second pair of electrodes serving as output electrodes and the other pair serving as input electrodes and composite seat with one end thereof bonded to the crystal face of {110 } of the Si single crystal so as to transmit the pressure applied to the diaphragm perpendicularly to the crystal face of the Si single crystal as a compression force. The pressure applied to the diaphragm acts perpendicularly to the crystal face of the Si single crystal as a compression force and the output electrodes output a voltage corresponding to the compression force.

9. 发明授权

US08698315B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08698315B2
公开(公告)日：2014-04-15
申请号：US13596859
申请日：2012-08-28
申请人： Yoshiyuki Hata , Yutaka Nonomura , Teruhisa Akashi , Hirofumi Funabashi , Motohiro Fujiyoshi , Yoshiteru Omura
发明人： Yoshiyuki Hata , Yutaka Nonomura , Teruhisa Akashi , Hirofumi Funabashi , Motohiro Fujiyoshi , Yoshiteru Omura
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： B81C1/00825 , B81B2201/0235 , B81B2203/033 , B81B2203/0392 , G01C19/5762 , G01C19/5769 , G01P15/0802 , G01P15/125 , G01P15/18 , G01P2015/0814 , G01P2015/084
摘要： When forming a trench of a narrow width in a thick semiconductor layer, a trench can be formed without the occurrence of semiconductor residue. In this Specification, a semiconductor device in which a trench is formed in a semiconductor layer is disclosed. In the semiconductor layer of the semiconductor device, a compensation pattern which compensates for sudden changes in the width of the trench is formed at a place at which the width of the trench changes suddenly. In the semiconductor layer of the above-described semiconductor device, since a compensation pattern is formed at a place at which the trench width changes suddenly, in the case where forming the trench using a deep RIE method, the occurrence of steep inclined portions arising from semiconductor residue can be prevented. Consequently, when forming a trench of a narrow width in a thick semiconductor layer, the occurrence of semiconductor residue can be prevented.
摘要翻译：当在厚半导体层中形成窄宽度的沟槽时，可以形成沟槽而不会发生半导体残渣。在本说明书中，公开了在半导体层中形成沟槽的半导体器件。在半导体器件的半导体层中，在沟槽宽度急剧变化的地方形成补偿沟槽宽度突然变化的补偿图案。在上述半导体器件的半导体层中，由于在沟槽宽度突然变化的地方形成补偿图案，所以在使用深RIE法形成沟槽的情况下，由于可以防止半导体残渣。因此，当在厚半导体层中形成窄宽度的沟槽时，可以防止发生半导体残渣。

10. 发明授权

US08707784B2 Laminated structure provided with movable portion 有权
标题翻译：层压结构设有可动部分
公开(公告)号：US08707784B2
公开(公告)日：2014-04-29
申请号：US13047274
申请日：2011-03-14
申请人： Teruhisa Akashi , Yutaka Nonomura , Motohiro Fujiyoshi , Hirofumi Funabashi , Yoshiyuki Hata , Yoshiteru Omura
发明人： Teruhisa Akashi , Yutaka Nonomura , Motohiro Fujiyoshi , Hirofumi Funabashi , Yoshiyuki Hata , Yoshiteru Omura
IPC分类号： G01C19/56
CPC分类号： G01C19/574 , G01P15/125 , G01P15/18 , G01P2015/082
摘要： A structure having a first movable portion displaced perpendicular to a substrate surface and a second movable portion displaced parallel to the substrate surface is realized by a laminated structure employing a nested structure for the first portion and the second portion. The laminated structure is provided with inner and outer movable portions. A y spring is connected to the outer portion, and the outer portion is supported in a y-axis direction by the y spring at a height apart from an outer substrate. A z spring is connected to the inner portion, and the inner portion is supported in a z-axis direction by the z spring at a height apart from the outer substrate. The outer portion and the z spring are at different heights from the substrate, and the z spring overpasses across the outer portion at a height apart from the outer movable portion.
摘要翻译：具有垂直于基板表面移动的第一可移动部分和平行于基板表面移动的第二可移动部分的结构通过采用用于第一部分和第二部分的嵌套结构的层压结构实现。层叠结构设置有内部和外部可移动部分。 y弹簧连接到外部，并且外部部分通过y弹簧以与外部基板隔开的高度在y轴方向上支撑。 z弹簧连接到内部，并且内部通过z弹簧以与外基板隔开的高度在z轴方向上支撑。外部部分和z弹簧与基板处于不同的高度，并且z弹簧在与外部可移动部分分开的高度处超过外部部分。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式