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1. 发明授权

US4110781A Bidirectional grooved thyristor fired by activation of the beveled surfaces 失效
标题翻译：通过激活斜面来激发双向开槽晶闸管
公开(公告)号：US4110781A
公开(公告)日：1978-08-29
申请号：US730183
申请日：1976-10-05
申请人： Nobutake Konishi , Takeshi Yokota , Yoshitaka Sugawara , Tsutomu Yatsuo , Masahiro Okamura
发明人： Nobutake Konishi , Takeshi Yokota , Yoshitaka Sugawara , Tsutomu Yatsuo , Masahiro Okamura
IPC分类号： H01L29/74 , G02B6/42 , H01L29/747 , H01L31/0203 , H01L31/111 , H01L31/167 , H02M1/08
CPC分类号： H01L31/0203 , G02B6/421 , G02B6/4295 , H01L31/1113 , H01L31/167
摘要： A bidirectional light-activated thyristor is provided which has a first and a second thyristor portion arranged in inverse-parallel with each other with a predetermined positional relation. The first and second thyristor portions are electrically isolated from each other by an isolating section. The bidirectional light-activated thyristor is provided with a first and a second photo trigger means for triggering the first and second thyristor portions respectively. Means is further provided for blocking a photo-trigger signal from the first photo-trigger means to the second thyristor portion and from the second photo-trigger means to the first thyristor portion.
摘要翻译：提供了一种双向光激活晶闸管，其具有以预定的位置关系彼此相反平行布置的第一和第二晶闸管部分。第一和第二晶闸管部分通过隔离部分彼此电隔离。双向光激活晶闸管设置有分别触发第一和第二晶闸管部分的第一和第二光触发装置。进一步提供了用于将光触发信号从第一光触发装置阻挡到第二晶闸管部分并且从第二光触发装置阻挡到第一晶闸管部分的装置。

2. 发明授权

US4216487A Bidirectional light-activated thyristor having substrate optical isolation 失效
标题翻译：具有基板光学隔离的双向光激活晶闸管
公开(公告)号：US4216487A
公开(公告)日：1980-08-05
申请号：US879758
申请日：1978-02-21
申请人： Nobutake Konishi , Takeshi Yokota , Yoshitaka Sugawara , Tsutomu Yatsuo , Masahiro Okamura
发明人： Nobutake Konishi , Takeshi Yokota , Yoshitaka Sugawara , Tsutomu Yatsuo , Masahiro Okamura
IPC分类号： H01L29/74 , G02B6/42 , H01L29/747 , H01L31/0203 , H01L31/111 , H01L31/167 , H02M1/08
CPC分类号： H01L31/0203 , G02B6/421 , G02B6/4295 , H01L31/1113 , H01L31/167
摘要： Disclosed is a bidirectional light-activated thyristor which comprises a first and a second thyristor portion arranged in inverse-parallel with each other with a predetermined positional relation, an isolation section for electrically isolating the first and second thyristor portions from each other, a first and a second main electrode for connecting the first and second thyristor portions with each other in inverse-parallel, and a first and a second photo-trigger means for triggering the first and second thyristor portions respectively, wherein the photo-trigger signal from the first photo-trigger means is prevented by the first thyristor portion from reaching the second thyristor portion and the photo-trigger signal from the second photo-trigger means is prevented by the second thyristor portion from reaching the first thyristor portion.
摘要翻译：公开了一种双向光激活晶闸管，其包括以预定的位置关系彼此相反并联布置的第一和第二晶闸管部分，用于将第一和第二晶闸管部分彼此电隔离的隔离部分，第一和第二晶体管用于将第一和第二晶闸管部分彼此并联连接的第二主电极和分别触发第一和第二晶闸管部分的第一和第二光触发装置，其中来自第一照片的光触发信号通过第一晶闸管部分防止触发装置到达第二晶闸管部分，并且通过第二晶闸管部分防止来自第二光触发装置的光触发信号到达第一晶闸管部分。

3. 发明授权

US4100562A Light coupled semiconductor device and method of manufacturing the same 失效
标题翻译：光耦合半导体器件及其制造方法
公开(公告)号：US4100562A
公开(公告)日：1978-07-11
申请号：US678171
申请日：1976-04-19
申请人： Yoshitaka Sugawara , Tsutomu Yatsuo , Nobutake Konishi
发明人： Yoshitaka Sugawara , Tsutomu Yatsuo , Nobutake Konishi
IPC分类号： H01L31/111 , G02B6/42 , H01L31/12 , H01L31/167
CPC分类号： G02B6/4295 , G02B6/4212 , G02B6/4248 , H01L31/167 , H01L2224/45144 , H01L2224/48227 , H01L2224/73265 , H01L2924/1301
摘要： A light emitting semiconductor device and a light detecting semiconductor device are coupled optically with each other through a light guide. The light guide is made of a single piece of light transmissible insulating material and at least its end portion associated with the semiconductor light detector is brought into wet contact with a light sensing region of the semiconductor light detector including its neighboring area. While being in fluid state, the light transmissible insulator held in wet contact with the semiconductor light emitter and detector is shaped into a predetermined configuration and thereafter hardened to form the light guide.
摘要翻译：发光半导体器件和光检测半导体器件通过光导彼此光学耦合。光导由单片透光绝缘材料制成，并且至少其与半导体光检测器相关联的端部与包括其相邻区域的半导体光检测器的光感测区域湿式接触。在处于流体状态时，保持与半导体光发射器和检测器湿接触的透光性绝缘体成形为预定构造，然后硬化以形成光导。

4. 发明授权

US4404580A Light activated semiconductor device 失效
标题翻译：光激活半导体器件
公开(公告)号：US4404580A
公开(公告)日：1983-09-13
申请号：US172072
申请日：1980-07-24
申请人： Nobutake Konishi , Masayoshi Naito , Tsutomu Yatsuo , Yoshio Terasawa
发明人： Nobutake Konishi , Masayoshi Naito , Tsutomu Yatsuo , Yoshio Terasawa
IPC分类号： H01L29/74 , H01L31/111 , H01L29/12 , H01L29/14
CPC分类号： H01L31/1113 , H01L29/74
摘要： A light activated thyristor with high dv/dt capability is provided by disposing first and second thyristors, one a primary and the other a pilot thyristor, in a semiconductor body having first and second major surface. The two thyristors have common first emitter, first base, and second base regions, and have spaced apart second emitter regions adjoining the second major surface of the body. The second emitter region of the second thyristor consists of first and second portions, first portion abutting the second base region of the second thyristor to create a ratarded electrical field. An exposed portion of the second major surface at the second emitter region of the second thyristor activates the second thyristor when electromagnetic radiation of wavelengths corresponding substantially to the energy bandgap of the semiconductor body strikes this exposed portion. The cathode electrode makes ohmic contact with the second emitter region of the first thyristor, and the anode electrode makes ohmic contact with the common first emitter regions. A floating contact also makes ohmic contact to the second emitter region of the second thyristor and the common second base region between the thyristors.
摘要翻译：具有高dv / dt能力的光激活晶闸管通过在具有第一和第二主表面的半导体本体中设置第一和第二晶闸管，一个一个导电晶闸管和另一个晶闸管。两个晶闸管具有共同的第一发射极，第一基极和第二基极区域，并且具有邻接主体的第二主表面的间隔开的第二发射极区域。第二晶闸管的第二发射极区域由第一和第二部分组成，第一部分邻接第二晶闸管的第二基极区域以产生经过电压的电场。当第二晶闸管的第二发射极区域处的第二主表面的暴露部分激活第二晶闸管，当基本上对应于半导体主体的能带隙的波长的电磁辐射撞击该暴露部分时。阴极电极与第一晶闸管的第二发射极区域欧姆接触，并且阳极电极与共同的第一发射极区域欧姆接触。浮动接触还使第二晶闸管的第二发射极区域和晶闸管之间的公共第二基极区域欧姆接触。

5. 发明授权

US3943550A Light-activated semiconductor-controlled rectifier 失效
标题翻译：光敏半导体可控整流器
公开(公告)号：US3943550A
公开(公告)日：1976-03-09
申请号：US534373
申请日：1974-12-19
申请人： Nobutake Konishi , Tsutomu Yatsuo , Tatsuya Kamei , Masahiro Okamura , Takuzo Ogawa
发明人： Nobutake Konishi , Tsutomu Yatsuo , Tatsuya Kamei , Masahiro Okamura , Takuzo Ogawa
IPC分类号： H01L31/111 , H01L29/74
CPC分类号： H01L31/1113
摘要： A light-activated semiconductor-controlled rectifier device comprising four layers of PNPN is disclosed in which a part of the edges of the PN junction formed between the intermediate P-type layer and the intermediate N-type layer is exposed on the same side on which the outer P-type layer is exposed, so that a photo-trigger signal is radiated on that exposed part of the edges of the PN junction.
摘要翻译：公开了一种包括四层PNPN的光激活半导体控制整流器件，其中形成在中间P型层和中间N型层之间的PN结的边缘的一部分暴露在同一侧上，暴露外部P型层，使得在PN结的边缘的暴露部分上照射触发信号。

6. 发明授权

US4016592A Light-activated semiconductor-controlled rectifier 失效
标题翻译：光敏半导体可控整流器
公开(公告)号：US4016592A
公开(公告)日：1977-04-05
申请号：US555279
申请日：1975-03-04
申请人： Tsutomu Yatsuo , Nobutake Konishi
发明人： Tsutomu Yatsuo , Nobutake Konishi
IPC分类号： H01L29/74 , H01L31/111
CPC分类号： H01L31/1113
摘要： A light-activated semiconductor-controlled rectifier apparatus has four layers of PNPN. The outer N-type layer comprises a first portion having a plurality of short-circuiting apertures and a second portion substantially separated from the first portion by an intermediate layer of P-type. One of the main electrodes is in ohmic contact with the first portion, with the intermediate P-type layer exposed through the short-circuiting apertures, with the periphery of the second portion and with the portion of the intermediate layer adjacent to the second portion, so that a photo signal is radiated on the second portion.
摘要翻译：光激活的半导体控制整流装置具有四层PNPN。外部N型层包括具有多个短路孔的第一部分和通过P型中间层与第一部分基本分离的第二部分。主电极之一与第一部分欧姆接触，中间P型层通过短路孔暴露，第二部分的周边和中间层的部分与第二部分相邻，使得在第二部分上照射光信号。

7. 发明授权

US4016593A Bidirectional photothyristor device 失效
标题翻译：双向光闸晶体管
公开(公告)号：US4016593A
公开(公告)日：1977-04-05
申请号：US583406
申请日：1975-06-03
申请人： Nobutake Konishi , Tsutomu Yatsuo , Tatsuya Kamei , Masahiro Okamura , Takuzo Ogawa
发明人： Nobutake Konishi , Tsutomu Yatsuo , Tatsuya Kamei , Masahiro Okamura , Takuzo Ogawa
IPC分类号： H01L29/74 , H01L29/747 , H01L31/0203 , H01L31/111
CPC分类号： H01L31/0203 , H01L31/1113
摘要： A bidirectional photothyristor device comprises a semiconductive substrate including an NPNPN quintuple layer in which projections of both the outer layers Ns in the stacking direction are not overlapped so as to define two quadruple layer regions each having either one of the outer layers Ns as an end layer, a pair of main electrodes connecting the two quadruple layer regions in parallel relationship, a recess formed between the two quadruple layer regions within the semiconductive substrate and to which two intermediate P-N junctions are exposed, and means for applying a light trigger signal to the recess.
摘要翻译：双向光闸晶体管装置包括一个包括NPNPN五元组的半导体衬底，其中层叠方向上的两个外层Ns的突起不重叠，以便限定两个四层层，每层具有外层Ns中的任一层作为端层一对主电极并联连接两个四重层区域，形成在半导体衬底内的两个四重层区域之间并且两个中间PN结露出的凹部和用于将光触发信号施加到凹部的装置。

8. 发明申请

US20090173949A1 SILICON CARBIDE MOS FIELD EFFECT TRANSISTOR WITH BUILT-IN SCHOTTKY DIODE AND METHOD FOR MANUFACTURING SUCH TRANSISTOR 有权
标题翻译：具有内置肖特基二极管的硅碳化物磁场效应晶体管及其制造方法
公开(公告)号：US20090173949A1
公开(公告)日：2009-07-09
申请号：US12281391
申请日：2006-12-27
申请人： Tsutomu Yatsuo , Shinsuke Harada , Kenji Fukuda , Mitsuo Okamoto
发明人： Tsutomu Yatsuo , Shinsuke Harada , Kenji Fukuda , Mitsuo Okamoto
IPC分类号： H01L29/24 , H01L21/336
CPC分类号： H01L21/8213 , H01L27/0727 , H01L29/0619 , H01L29/1095 , H01L29/1608 , H01L29/66068 , H01L29/7806
摘要： This invention has a cell incorporating a built-in Schottky diode region disposed in at least part of an elementary cell that constitutes an SiC vertical MOSFET provided in a low-density p-type deposit film with a channel region and a base region inverted to an n-type by ion implantation. This built-in Schottky diode region has built therein a Schottky diode of low on-resistance that is formed of a second deficient pan disposed in a high-density gate layer, a second n-type base layer penetrating a low-density p-type deposit layer formed thereon, reaching an n-type drift layer of the second deficient part and attaining its own formation in consequence of inversion of the p-type deposit layer into an n-type by the ion implantation of an n-type impurity from the surface, and a source electrode connected in the manner of forming a Schottky barrier to the surface-exposed part of the second n-type base layer.
摘要翻译：本发明具有一个电池，该电池结合了内置的肖特基二极管区域，该区域设置在构成在具有沟道区域和基极区域的低密度p型沉积膜中提供的SiC垂直MOSFET的基本单元的至少一部分中 n型离子注入。该内置的肖特基二极管区域内置有低导通电阻的肖特基二极管，该二极管由设置在高密度栅极层中的第二缺陷盘形成，第二n型基极层穿透低密度p型沉积层形成在其上，到达第二缺陷部分的n型漂移层，并且由于p型沉积层通过从n型杂质离子注入n型杂质而转变为n型，从而形成其自身的形成表面以及以与第二n型基底层的表面暴露部分形成肖特基势垒的方式连接的源电极。

9. 发明申请

US20090072244A1 METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE, AND SILICON CARBIDE SEMICONDUCTOR DEVICE 有权
标题翻译：制造硅碳化硅半导体器件的方法和碳化硅半导体器件
公开(公告)号：US20090072244A1
公开(公告)日：2009-03-19
申请号：US12281902
申请日：2007-01-16
申请人： Shinsuke Harada , Makoto Katou , Kenji Fukuda , Tsutomu Yatsuo
发明人： Shinsuke Harada , Makoto Katou , Kenji Fukuda , Tsutomu Yatsuo
IPC分类号： H01L29/24 , H01L21/44
CPC分类号： H01L21/31658 , H01L21/02126 , H01L21/02236 , H01L21/02255 , H01L21/02337 , H01L21/046 , H01L21/0485 , H01L21/324 , Y10S438/931
摘要： The object is to provide a method for the fabrication of a semiconductor device having undergone an anneal treatment for the purpose of forming such ohmic contact as enables decrease of ohmic contact resistance and being provided on the (000-1) plane of silicon carbide with an insulating film and provide the semiconductor device. The method for the fabrication of a silicon carbide semiconductor device includes the steps of performing thermal oxidation on the (000-1) plane of a silicon carbide semiconductor in a gas containing at least oxygen and moisture, thereby forming an insulating film in such a manner as to contact the (000-1) plane of the silicon carbide semiconductor, removing part of the insulating film, thereby forming an opening part therein, depositing contact metal on at least part of the opening part, and performing a heat treatment, thereby forming a reaction layer of the contact metal and silicon carbide, wherein the heat treatment is implemented in a mixed gas of an inert gas and hydrogen.
摘要翻译：本发明的目的是提供一种用于制造半导体器件的方法，该半导体器件为了形成这种欧姆接触的目的而进行了退火处理，以能够降低欧姆接触电阻并且提供在碳化硅的（000-1）面上，绝缘膜并提供半导体器件。制造碳化硅半导体器件的方法包括以下步骤：在至少包含氧和水分的气体中在碳化硅半导体的（000-1）面上进行热氧化，从而以这种方式形成绝缘膜为了接触碳化硅半导体的（000-1）面，除去绝缘膜的一部分，从而在其中形成开口部，在开口部的至少一部分上沉积接触金属，进行热处理，从而形成接触金属和碳化硅的反应层，其中热处理在惰性气体和氢气的混合气体中实施。

10. 发明申请

US20080203400A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080203400A1
公开(公告)日：2008-08-28
申请号：US12025445
申请日：2008-02-04
申请人： Kenji Fukuda , Junji Senzaki , Shinsuke Harada , Makoto Kato , Tsutomu Yatsuo , Mitsuo Okamoto
发明人： Kenji Fukuda , Junji Senzaki , Shinsuke Harada , Makoto Kato , Tsutomu Yatsuo , Mitsuo Okamoto
IPC分类号： H01L29/161
CPC分类号： H01L29/7802 , H01L21/049 , H01L21/8213 , H01L21/823807 , H01L21/823857 , H01L21/823885 , H01L27/092 , H01L29/045 , H01L29/1608 , H01L29/66068 , H01L29/7395 , H01L29/7835
摘要： A semiconductor device and a method of manufacturing the device using a (000-1)-faced silicon carbide substrate are provided. A SiC semiconductor device having a high blocking voltage and high channel mobility is manufactured by optimizing the heat-treatment method used following the gate oxidation. The method of manufacturing a semiconductor device includes the steps of forming a gate insulation layer on a semiconductor region formed of silicon carbide having a (000-1) face orientation, forming a gate electrode on the gate insulation layer, forming an electrode on the semiconductor region, cleaning the semiconductor region surface. The gate insulation layer is formed in an atmosphere containing 1% or more H2O (water) vapor at a temperature of from 800° C. to 1150° C. to reduce the interface trap density of the interface between the gate insulation layer and the semiconductor region.
摘要翻译：提供半导体器件和使用（000-1）面的碳化硅衬底的器件的制造方法。通过优化栅极氧化后使用的热处理方法来制造具有高阻断电压和高沟道迁移率的SiC半导体器件。制造半导体器件的方法包括以下步骤：在由具有（000-1）面取向的碳化硅形成的半导体区上形成栅极绝缘层，在栅极绝缘层上形成栅电极，在半导体上形成电极区域，清洁半导体区域表面。在800℃至1150℃的温度下，在含有1％或更多的H 2 O（水）蒸气的气氛中形成栅极绝缘层，以降低界面陷阱密度栅极绝缘层和半导体区域之间的界面。

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