专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5182075A Nuclear fusion reactor 失效
标题翻译：核聚变反应堆
公开(公告)号：US5182075A
公开(公告)日：1993-01-26
申请号：US523403
申请日：1990-05-15
申请人： Yoshitaka Gotoh , Shigeru Kikuchi , Tetsuo Nakazawa , Tadahiko Miyoshi , Tetsuo Oyama , Yoshihiro Ozawa , Shin-ichi Itoh
发明人： Yoshitaka Gotoh , Shigeru Kikuchi , Tetsuo Nakazawa , Tadahiko Miyoshi , Tetsuo Oyama , Yoshihiro Ozawa , Shin-ichi Itoh
IPC分类号： G21B1/05 , G21B1/11 , G21B1/13 , G21B1/17
CPC分类号： G21B1/13 , Y02E30/128
摘要： A structure of a nuclear fusion reactor having a vacuum vessel in which hydrogen isotope plasma is enclosed and a confining magnetic field generating coil for confining said plasma at a predetermined position in said vacuum vessel. It comprises a low tritium-permeable layer having lower tritium-permeability than that of a cooling metal base for forming a refrigerant passage for cooling the vacuum vessel on at least the surface adjacent to said plasma enclosed and a heat resistant and insulating fire member of the level higher than that of said cooling metal base for thermally shielding said low tritium-permeable layer from said plasma or corpuscular rays is formed on the low tritium-permeable layer. The similar processings are applied to the cooling metal base for forming the refrigerant passage for cooling a divertor disposed in the vacuum vessel and for neutralizing ionized corpuscles so as to exhaust them.
摘要翻译：具有封入有氢同位素等离子体的真空容器的核聚变反应堆的结构和用于将所述等离子体限制在所述真空容器内的预定位置的约束磁场产生线圈。它包括具有比冷却金属基底低的氚渗透性的低氚渗透层，用于在至少与所述等离子体封闭的邻近的表面上形成用于冷却真空容器的制冷剂通道和耐热和绝缘的防火构件高于用于将所述低氚渗透层与所述等离子体或红细胞光线进行热屏蔽的所述冷却金属基底的高度，形成在低氚渗透层上。类似的处理被应用于用于形成用于冷却设置在真空容器中的偏滤器的制冷剂通道的冷却金属基底，并且用于中和电离的小体以排出它们。

2. 发明授权

US5520051A Strain sensing device 失效
标题翻译：应变感测装置
公开(公告)号：US5520051A
公开(公告)日：1996-05-28
申请号：US249082
申请日：1994-05-25
申请人： Tetsuo Fujii , Yoshitaka Gotoh , Susumu Kuroyanagi
发明人： Tetsuo Fujii , Yoshitaka Gotoh , Susumu Kuroyanagi
IPC分类号： G01P15/12 , G01L9/00 , G01L15/00 , G01P15/08 , H01L29/84
CPC分类号： G01L9/0042 , G01L15/00 , G01P15/0802 , G01P15/123
摘要： Device including a strain generating portion supported at least at one end on a substrate and formed in a displaceable manner with respect to the substrate in a cavity of the substrate. A semiconductor strain sensing element, which is disposed at the strain generating portion, detects the amount of strain of the strain generating portion. A support is disposed at a connection point between the strain generating portion and the substrate so as to reinforce the connection point.
摘要翻译：该装置包括一个应变产生部分，该部分至少在一个端部支撑在衬底上，并且在衬底的空腔中相对于衬底以可移位的方式形成。设置在应变发生部的半导体应变感测元件检测应变发生部的应变量。支撑件设置在应变发生部和基板之间的连接点处，以便加强连接点。

3. 发明授权

US5320705A Method of manufacturing a semiconductor pressure sensor 失效
标题翻译：制造半导体压力传感器的方法
公开(公告)号：US5320705A
公开(公告)日：1994-06-14
申请号：US108498
申请日：1993-08-18
申请人： Tetsuo Fujii , Yoshitaka Gotoh , Susumu Kuroyanagi , Osamu Ina
发明人： Tetsuo Fujii , Yoshitaka Gotoh , Susumu Kuroyanagi , Osamu Ina
IPC分类号： G01L9/00 , H01L27/20 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： G01L9/0042 , G01L19/147 , G01L9/0054 , H01L27/20 , Y10T29/42 , Y10T29/49103
摘要： A semiconductor pressure sensor of this invention is intended to provide a semiconductor pressure sensor having an excellent electrical isolation between the supporting means of the semiconductor pressure sensor and the semiconductor substrate, the semiconductor pressure sensor basically comprising a semiconductor substrate having a first semiconductor region in which; at least a semiconductor device is formed, a second semiconductor region and an isolated layer buried between the first and second semiconductor regions, a cavity provided in the second semiconductor region, the opening thereof existing on the mail surface of the second semiconductor region and a strain detecting portion consisting of the semiconductor device and provided in the first semiconductor region opposite to the cavity. The semiconductor pressure sensor is featured in that at least one of the outer peripheral side surfaces of the first and the second semiconductor regions is formed inside of the outermost peripheral side surface of the isolation layer.
摘要翻译：本发明的半导体压力传感器旨在提供一种半导体压力传感器，其具有在半导体压力传感器的支撑装置和半导体衬底之间具有优异的电绝缘性，半导体压力传感器基本上包括具有第一半导体区域的半导体衬底， ; 形成至少一个半导体器件，第二半导体区域和埋在第一和第二半导体区域之间的隔离层，设置在第二半导体区域中的空腔，存在于第二半导体区域的邮件表面上的开口和应变检测部分由半导体器件组成并设置在与空腔相对的第一半导体区域中。半导体压力传感器的特征在于，第一半导体区域和第二半导体区域的至少一个外周侧表面形成在隔离层的最外周侧表面的内部。

4. 发明授权

US5313836A Semiconductor sensor for accelerometer 失效
标题翻译：用于加速度计的半导体传感器
公开(公告)号：US5313836A
公开(公告)日：1994-05-24
申请号：US996474
申请日：1992-12-23
申请人： Tetsuo Fujii , Susumu Kuroyanagi , Yoshitaka Gotoh
发明人： Tetsuo Fujii , Susumu Kuroyanagi , Yoshitaka Gotoh
IPC分类号： G01P15/12 , G01P15/02 , G01P15/08 , H01L29/84
CPC分类号： G01P15/02 , G01P15/0802 , G01P15/123 , G01P2015/0828
摘要： A semiconductor sensor for an accelerometer including a beam portion, consisting of a thin beam portion and a thick beam portion and supported by a solid member through the end of the thin beam portion, and a stopper portion provided at a position on an imaginary line along which a center of gravity of the thick beam portion moves. These components are integrally formed in a silicon substrate. Excessive displacement of the beam portion when excessive acceleration is applied is effectively suppressed by the stopper portion, and breakage of the thin beam portion due to excessive acceleration can be avoided.
摘要翻译：一种用于加速度计的半导体传感器，其包括梁部分，该梁部分由薄梁部分和厚梁部分组成，并且通过薄梁部分的端部由实心部件支撑，以及设置在假想线上的位置处的止动部分其中厚梁部分的重心移动。这些部件一体地形成在硅衬底中。当施加过大的加速度时，梁部分的过大位移被止动部分有效地抑制，并且可以避免由于过度的加速度引起的薄梁部分的断裂。

5. 发明授权

US06333544B1 Integrated photo sensor 有权
标题翻译：集成光电传感器
公开(公告)号：US06333544B1
公开(公告)日：2001-12-25
申请号：US09625867
申请日：2000-07-26
申请人： Inao Toyoda , Yoshitaka Gotoh
发明人： Inao Toyoda , Yoshitaka Gotoh
IPC分类号： H01L2714
CPC分类号： H01L27/1443
摘要： A sensor portion of an integrated photo sensor is composed of a silicon substrate, a photo diode and a signal processing element which are provided on the silicon substrate separately from each other. A shading film is provided on a surface region of the substrate except a region above the photo diode, and an intermediate insulating film made of silicon oxide is provided between the silicon substrate and the shading film. The intermediate insulating film includes a part extending on a light-receiving region of the photo diode, and the part is covered with light transmittable gel having a refractive index approximately equal to that of the intermediate insulating film.
摘要翻译：集成光传感器的传感器部分由分别设置在硅衬底上的硅衬底，光电二极管和信号处理元件组成。在除了光电二极管以外的区域的基板的表面区域设置遮光膜，在硅基板和遮光膜之间设置由氧化硅构成的中间绝缘膜。中间绝缘膜包括在光电二极管的光接收区域延伸的部分，并且该部分被透光性凝胶覆盖，折射率近似等于中间绝缘膜的折射率。

6. 发明授权

US5824608A Semiconductor physical-quantity sensor and method for manufacturing same 失效
标题翻译：半导体物理量传感器及其制造方法
公开(公告)号：US5824608A
公开(公告)日：1998-10-20
申请号：US671473
申请日：1996-06-27
申请人： Yoshitaka Gotoh , Makiko Fujita , Yukihiro Takeuchi
发明人： Yoshitaka Gotoh , Makiko Fujita , Yukihiro Takeuchi
IPC分类号： G01P15/125 , B81B3/00 , B81C1/00 , G01P15/00 , G01P15/08 , G01P15/12 , H01L29/84 , H01L29/82
CPC分类号： B81B3/001 , G01P15/0802 , G01P15/124 , G01P2015/0814
摘要： A polysilicon thin film is formed on a silicon substrate by LPCVD technique. At this time, by a performing film formation at a low temperature of approximately 620.degree. C., for example, an irregularities portion is formed on the surface thereof. A silicon oxide film that serves as a sacrificial layer is formed thereon and, on this sacrificial layer, a polysilicon thin film that serves as a movable portion forming thin film is formed. Then, the silicon oxide film beneath this polysilicon thin film is removed by wet etching to thereby form a movable portion. As a result, the movable portion of a beam structure that is composed of the thin film is disposed over the silicon substrate at a prescribed distance therefrom. Although an etchant-replacing liquid enters between the movable portion and the substrate whereby the movable portion is attracted toward the substrate, the movable portion is prevented from adhering to the substrate by means of the irregularities portion.
摘要翻译：通过LPCVD技术在硅衬底上形成多晶硅薄膜。此时，通过在约620℃的低温下进行成膜，例如，在其表面上形成凹凸部。在其上形成用作牺牲层的氧化硅膜，并且在该牺牲层上形成用作可移动部分形成薄膜的多晶硅薄膜。然后，通过湿蚀刻除去该多晶硅薄膜下方的氧化硅膜，从而形成可动部。结果，由薄膜构成的光束结构的可动部分以规定的距离设置在硅衬底上。尽管蚀刻剂置换液体进入到可动部分和基板之间，由此可动部分被吸引到基板上，但是通过不规则部分防止可移动部分粘附到基板上。

7. 发明授权

US06349104B1 Stripe-geometry heterojunction laser diode device 失效
标题翻译：条纹几何异质结激光二极管器件
公开(公告)号：US06349104B1
公开(公告)日：2002-02-19
申请号：US09087275
申请日：1998-05-29
申请人： Hisaya Kato , Yoshitaka Gotoh , Katsunori Abe , Kinya Atsumi , Takekazu Terui , Noriyuki Matsushita
发明人： Hisaya Kato , Yoshitaka Gotoh , Katsunori Abe , Kinya Atsumi , Takekazu Terui , Noriyuki Matsushita
IPC分类号： H01S304
CPC分类号： H01S5/0425 , B82Y20/00 , H01L2224/48091 , H01L2224/48464 , H01L2224/49111 , H01L2224/73265 , H01S5/02212 , H01S5/0224 , H01S5/02272 , H01S5/028 , H01S5/0421 , H01S5/2031 , H01S5/2036 , H01S5/22 , H01S5/3211 , H01S5/3432 , H01S5/4018 , H01S5/4043 , H01S2301/173 , H01L2924/00014
摘要： A high power stripe-geometry heterojunction laser diode device is provided which may be employed in a radar system designed to measure the distance to a target. The laser diode device has an electric circuit path extending from a first electrode connected to a voltage source to a second electrode connected to ground and features addition of a resistance of 1 m&OHgr; or more to the electric circuit path to provide uniform current distribution in an active layer for emitting a high density laser beam.
摘要翻译：提供了一种高功率条纹几何异质结激光二极管器件，可用于测量与目标距离的雷达系统中。激光二极管装置具有从连接到电压源的第一电极延伸到连接到地的第二电极的电路路径，并且特征是向电路路径添加1mOMEGA或更大的电阻，以在活动中提供均匀的电流分布用于发射高密度激光束的层。

8. 发明授权

US5922212A Semiconductor sensor having suspended thin-film structure and method for fabricating thin-film structure body 失效
标题翻译：具有悬浮薄膜结构的半导体传感器和用于制造薄膜结构体的方法
公开(公告)号：US5922212A
公开(公告)日：1999-07-13
申请号：US663001
申请日：1996-06-07
申请人： Kazuhiko Kano , Kenichi Nara , Toshimasa Yamamoto , Nobuyuki Kato , Yoshitaka Gotoh , Yoshinori Ohtsuka , Kenichi Ao
发明人： Kazuhiko Kano , Kenichi Nara , Toshimasa Yamamoto , Nobuyuki Kato , Yoshitaka Gotoh , Yoshinori Ohtsuka , Kenichi Ao
IPC分类号： B81B3/00 , B81C1/00 , G01P15/08 , G01P15/125 , C23F1/00
CPC分类号： G01P15/125 , B81B3/0072 , B81C1/00666 , G01P15/0802 , B81C2201/0164 , B81C2201/0167 , B81C2201/017 , G01P2015/0814
摘要： A semiconductor sensor having a thin-film structure body, in which thin-film structure is prevented from bending due to the internal stress distribution in the thickness direction, is disclosed. A silicon-oxide film is formed as a sacrificial layer on a silicon substrate, and a polycrystalline-silicon thin film is formed on the silicon-oxide film. Thereafter, phosphorus (P) is ion-implanted in the surface of the polycrystalline-silicon thin film, and thereby the surface state of the polycrystalline-silicon thin film is modified. A portion of distribution of stress existing in the thickness direction of the polycrystalline-silicon thin film is changed by this modification, and stress distribution is adjusted. By removal of the silicon-oxide film, a movable member of the polycrystalline-silicon thin film is disposed above the silicon substrate with a gap interposed therebetween.
摘要翻译：公开了一种具有薄膜结构体的半导体传感器，其薄膜结构被防止由于厚度方向上的内部应力分布而弯曲。在硅衬底上形成氧化硅膜作牺牲层，在氧化硅膜上形成多晶硅薄膜。此后，将磷（P）离子注入多晶硅薄膜的表面，从而改变多晶硅薄膜的表面状态。通过该变形例改变在多晶硅薄膜的厚度方向上存在的应力分布的一部分，并且调整应力分布。通过去除氧化硅膜，多晶硅薄膜的可移动部件设置在硅衬底之上，其间插入间隙。

9. 再颁专利

USRE34893E Semiconductor pressure sensor and method of manufacturing same 失效
标题翻译：半导体压力传感器及其制造方法
公开(公告)号：USRE34893E
公开(公告)日：1995-04-04
申请号：US35248
申请日：1993-03-22
申请人： Tetsuo Fujii , Yoshitaka Gotoh , Susumu Kuroyanagi , Osamu Ina
发明人： Tetsuo Fujii , Yoshitaka Gotoh , Susumu Kuroyanagi , Osamu Ina
IPC分类号： G01L9/00 , H01L27/06 , H01L27/092 , H01L29/84 , H01L29/96
CPC分类号： H01L27/067 , G01L19/147 , G01L9/0042 , H01L27/092
摘要： A semiconductor pressure sensor of this invention is intended to provide a semiconductor pressure sensor having an excellent electrical isolation between the supporting means of the semiconductor pressure sensor and the semiconductor substrate, the semiconductor pressure sensor basically comprising a semiconductor substrate having a first semiconductor region in which at least a semiconductor device is formed, a second semiconductor region and an isolated layer buried between the first and second semiconductor regions, a cavity provided in the second semiconductor region, the opening thereof existing on the main surface of the second semiconductor region and a strain detecting portion consisting of the semiconductor device and provided in the first semiconductor region opposite to the cavity. The semiconductor pressure sensor is featured in that at least one of the outer peripheral side surfaces of the first and the second semiconductor regions is formed inside of the outermost peripheral side surface of the isolation layer.
摘要翻译：本发明的半导体压力传感器旨在提供一种半导体压力传感器，其具有在半导体压力传感器的支撑装置和半导体衬底之间具有优异的电绝缘性，半导体压力传感器基本上包括具有第一半导体区域的半导体衬底，形成至少一个半导体器件，第二半导体区域和埋在第一和第二半导体区域之间的隔离层，设置在第二半导体区域中的空腔，存在于第二半导体区域的主表面上的开口和应变检测部分由半导体器件组成并设置在与空腔相对的第一半导体区域中。半导体压力传感器的特征在于，第一半导体区域和第二半导体区域的至少一个外周侧表面形成在隔离层的最外周侧表面的内部。

10. 发明授权

US5397420A Fine structure forming device 失效
标题翻译：精细结构成型装置
公开(公告)号：US5397420A
公开(公告)日：1995-03-14
申请号：US935104
申请日：1992-08-27
申请人： Nobuyoshi Sakakibara , Takayuki Tominaga , Michio Hisanaga , Tadashi Hattori , Yoshitaka Gotoh , Naohito Mizuno
发明人： Nobuyoshi Sakakibara , Takayuki Tominaga , Michio Hisanaga , Tadashi Hattori , Yoshitaka Gotoh , Naohito Mizuno
IPC分类号： B23K10/00 , H05H1/30 , H05H1/00
CPC分类号： H05H1/30 , B23K10/00
摘要： A micro machining apparatus forms a high-aspect structure having an optional depth in a workpiece at low cost. The apparatus applies high-frequency electric power to the workpiece and a machining electrode, to form a plasma zone in the vicinity of the leading end of the machining electrode. The apparatus guides a reactive gas into the plasma zone to activate the gas. The activated gas is adsorbed by the surface of the workpiece that faces the leading end of the machining electrode. The adsorbed gas reacts with the material of the workpiece and locally etches off the surface of the workpiece. A feed mechanism of the apparatus feeds the machining electrode toward the workpiece according to the progress of the etching, thereby forming a trench in the workpiece. Reaction products of the workpiece and reactive gas produced by the etching adhere to and deposit on the sidewall of the trench and form a protective film for protecting the sidewall from being etched, thereby providing the trench with a high aspect ratio.
摘要翻译：微加工装置以低成本形成在工件中具有可选深度的高方位结构。该装置对工件和加工电极施加高频电力，以在加工电极的前端附近形成等离子体区域。该装置引导反应气体进入等离子体区域以激活气体。活性气体被工件的面向加工电极前端的表面吸附。吸附的气体与工件的材料反应并局部地从工件的表面上蚀刻掉。该装置的进给机构根据蚀刻的进行将加工电极朝向工件进给，从而在工件中形成沟槽。工件的反应产物和通过蚀刻产生的反应性气体粘附并沉积在沟槽的侧壁上并形成保护膜，以保护侧壁不被蚀刻，从而为沟槽提供高纵横比。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式