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1. 发明申请

US20110024853A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110024853A1
公开(公告)日：2011-02-03
申请号：US12892961
申请日：2010-09-29
申请人： Eiji SUGIYAMA , Yoshitaka DOZEN , Hisashi OHTANI , Takuya TSURUME
发明人： Eiji SUGIYAMA , Yoshitaka DOZEN , Hisashi OHTANI , Takuya TSURUME
IPC分类号： H01L29/66
CPC分类号： H01L27/1266 , H01L23/145 , H01L23/49855 , H01L27/105 , H01L27/115 , H01L27/1248 , H01L27/13 , H01L29/78603 , H01L2223/6677 , H01L2224/16225 , H01L2924/07811 , H01L2924/12032 , H01L2924/12044 , H01L2924/13091 , H01Q1/2225 , H01Q1/2283 , H01L2924/00
摘要： The present invention provides a semiconductor device which is not easily damaged by external local pressure. The present invention further provides a manufacturing method of a highly-reliable semiconductor device, which is not destroyed by external local pressure, with a high yield. A structure body, in which high-strength fiber of an organic compound or an inorganic compound is impregnated with an organic resin, is provided over an element substrate having a semiconductor element formed using a single crystal semiconductor region, and heating and pressure bonding are performed, whereby a semiconductor device is manufactured, to which the element substrate and the structure body in which the high-strength fiber of an organic compound or an inorganic compound is impregnated with the organic resin are fixed together.
摘要翻译：本发明提供一种不容易被外部局部压力损坏的半导体器件。本发明还提供了一种高可靠性的半导体器件的制造方法，其不被外部局部压力破坏，而且产率高。在具有使用单晶半导体区域形成的半导体元件的元件基板上设置有有机化合物或无机化合物的高强度纤维被有机树脂浸渍的结构体，进行加热和压接由此制造半导体器件，元件基板和有机化合物的高强度纤维或无机化合物浸渍有机树脂的结构体固定在一起。

2. 发明申请

US20110233556A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110233556A1
公开(公告)日：2011-09-29
申请号：US13157338
申请日：2011-06-10
申请人： Eiji SUGIYAMA , Yoshitaka DOZEN , Hisashi OHTANI , Takuya TSURUME
发明人： Eiji SUGIYAMA , Yoshitaka DOZEN , Hisashi OHTANI , Takuya TSURUME
IPC分类号： H01L29/786
CPC分类号： H01L27/1266 , H01L23/145 , H01L23/49855 , H01L27/105 , H01L27/115 , H01L27/1248 , H01L27/13 , H01L29/78603 , H01L2223/6677 , H01L2224/16225 , H01L2924/07811 , H01L2924/09701 , H01L2924/12044 , H01Q1/2225 , H01Q1/2283 , H01L2924/00
摘要： The present invention provides a semiconductor device which is not easily damaged by external local pressure. The present invention further provides a method for manufacturing a highly-reliable semiconductor device, which is not destructed by external local pressure, with a high yield. A structure body, in which high-strength fiber of an organic compound or an inorganic compound is impregnated with an organic resin, is provided over an element layer having a semiconductor element formed using a non-single crystal semiconductor layer, and heating and pressure bonding are performed, whereby a semiconductor device is manufactured, to which the element layer and the structure body in which the high-strength fiber of an organic compound or an inorganic compound is impregnated with the organic resin are firmly fixed together.
摘要翻译：本发明提供一种不容易被外部局部压力损坏的半导体器件。本发明还提供一种以高产率制造不被外部局部压力破坏的高可靠性半导体器件的方法。在具有使用非单晶半导体层形成的半导体元件的元件层上设置有机化合物或无机化合物的高强度纤维被有机树脂浸渍的结构体，加热和压接由此制造半导体器件，将有机化合物或无机化合物的高强度纤维与有机树脂浸渍的元件层和结构体牢固地固定在一起。

3. 发明申请

US20100200663A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100200663A1
公开(公告)日：2010-08-12
申请号：US12767909
申请日：2010-04-27
申请人： Yoshitaka DOZEN , Eiji SUGIYAMA , Hisashi OHTANI , Takuya TSURUME
发明人： Yoshitaka DOZEN , Eiji SUGIYAMA , Hisashi OHTANI , Takuya TSURUME
IPC分类号： G06K19/07 , H01L29/12 , H01L23/538
CPC分类号： H01L27/1266 , H01L27/1214 , H01L27/1255
摘要： In the present application, is disclosed a method of manufacturing a flexible semiconductor device having an excellent reliability and tolerance to the loading of external pressure. The method includes the steps of: forming a separation layer over a substrate having an insulating surface; forming an element layer including a semiconductor element comprising a non-single crystal semiconductor layer, over the separation layer; forming an organic resin layer over the element layer; providing a fibrous body formed of an organic compound or an inorganic compound on the organic resin layer; heating the organic resin layer; and separating the element layer from the separation layer. This method allows the formation of a flexible semiconductor device having a sealing layer in which the fibrous body is impregnated with the organic resin.
摘要翻译：在本申请中，公开了一种制造柔性半导体器件的方法，所述柔性半导体器件对外部压力的加载具有优异的可靠性和耐受性。该方法包括以下步骤：在具有绝缘表面的基底上形成分离层; 在分离层上形成包括非单晶半导体层的半导体元件的元件层; 在元件层上形成有机树脂层; 在有机树脂层上提供由有机化合物或无机化合物形成的纤维体; 加热有机树脂层; 并将元件层与分离层分离。该方法允许形成具有密封层的柔性半导体器件，其中纤维体浸渍有机树脂。

4. 发明申请

US20110171778A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110171778A1
公开(公告)日：2011-07-14
申请号：US13071629
申请日：2011-03-25
申请人： Tomoko TAMURA , Eiji SUGIYAMA , Yoshitaka DOZEN , Koji DAIRIKI , Takuya TSURUME
发明人： Tomoko TAMURA , Eiji SUGIYAMA , Yoshitaka DOZEN , Koji DAIRIKI , Takuya TSURUME
IPC分类号： H01L21/50 , H01L21/56
CPC分类号： H01L21/02381 , H01L21/84 , H01L27/1214 , H01L27/1266 , H01L27/13 , H01L2221/68359 , H01L2221/68368 , H01L2224/81001
摘要： A release layer formed over a substrate; at least one of thin film integrated circuits is formed over the release layer; a film is formed over each of the at least one of thin film integrated circuits; and the release layer is removed by using an etchant; thus, the at least one of thin film integrated circuits is peeled from the substrate. A semiconductor device is formed by sealing the peeled thin film integrated circuit by lamination or the like.
摘要翻译：形成在衬底上的释放层; 在剥离层上形成薄膜集成电路中的至少一个; 在薄膜集成电路中的至少一个上形成膜; 并通过使用蚀刻剂除去释放层; 因此，薄膜集成电路中的至少一个从基板剥离。半导体器件通过层压等密封剥离的薄膜集成电路而形成。

5. 发明申请

US20100317156A1 METHOD FOR MANUFACTURING INTEGRATED CIRCUIT 有权
标题翻译：制造集成电路的方法
公开(公告)号：US20100317156A1
公开(公告)日：2010-12-16
申请号：US12859878
申请日：2010-08-20
申请人： Takuya TSURUME , Junya MARUYAMA , Yoshitaka DOZEN
发明人： Takuya TSURUME , Junya MARUYAMA , Yoshitaka DOZEN
IPC分类号： H01L21/50
CPC分类号： H01L27/1266 , H01L21/76251 , H01L27/1214 , H05K3/20
摘要： A method for separating an integrated circuit formed by a thin film having a novel structure or a method for transferring the integrated circuit to another substrate, that is, so-called transposing method, has not been proposed. According to the present invention, in the case that an integrated circuit having a thin film having a novel structure formed over a substrate via a release layer is separated, the release layer is removed in the state that the thin film integrated circuit is fixated, the thin film integrated circuit is transposed to a supporting substrate having an adhesion surface, and the thin film integrated circuit is transposed to another substrate having an adhesion surface with higher strength of adhesion than that of the supporting substrate.
摘要翻译：用于将由具有新颖结构的薄膜形成的集成电路分离的方法或将集成电路转移到另一基板的方法，即所谓的转置方法尚未提出。根据本发明，在通过剥离层在基板上形成具有新颖结构的薄膜的集成电路被分离的情况下，在薄膜集成电路固定的状态下去除剥离层，薄膜集成电路被转置到具有粘合表面的支撑基板上，并且薄膜集成电路被转置到具有比支撑基板的粘合强度更高的粘附表面的另一基板。

6. 发明申请

US20110207292A1 METHOD FOR MANUFACTURING THIN FILM INTEGRATED CIRCUIT, AND ELEMENT SUBSTRATE 有权
标题翻译：制造薄膜集成电路和元件基板的方法
公开(公告)号：US20110207292A1
公开(公告)日：2011-08-25
申请号：US13100316
申请日：2011-05-04
申请人： Yoshitaka DOZEN , Tomoko TAMURA , Takuya TSURUME , Koji DAIRIKI
发明人： Yoshitaka DOZEN , Tomoko TAMURA , Takuya TSURUME , Koji DAIRIKI
IPC分类号： H01L21/762
CPC分类号： H01L27/1266 , H01L27/1214 , H01L27/1218 , H01L27/13 , H01L27/28 , H01L29/78603 , H01L2924/3511
摘要： Application form of and demand for an IC chip formed with a silicon wafer are expected to increase, and further reduction in cost is required. An object of the invention is to provide a structure of an IC chip and a process capable of producing at a lower cost. A feature of the invention is to use a metal film and a reactant having the metal film as a separation layer. An etching rate of the metal film or the reactant having metal is high, and a physical means in addition to a chemical means of etching the metal film or the reactant having metal can be used in the invention. Thus, the IDF chip can be manufactured more simply and easily in a short time.
摘要翻译：预期由硅晶片形成的IC芯片的应用形式和需求将增加，并且需要进一步降低成本。本发明的目的是提供一种IC芯片的结构和能够以较低成本生产的方法。本发明的一个特征是使用具有金属膜的金属膜和反应物作为分离层。金属膜或具有金属的反应物的蚀刻速率高，并且除了蚀刻金属膜的化学方法或具有金属的反应物之外的物理手段可以用于本发明。因此，可以在短时间内更容易地制造IDF芯片。

7. 发明申请

US20090050964A1 METHOD FOR MANUFACTURING THIN FILM INTEGRATED CIRCUIT, AND ELEMENT SUBSTRATE 有权
标题翻译：制造薄膜集成电路和元件基板的方法
公开(公告)号：US20090050964A1
公开(公告)日：2009-02-26
申请号：US12255117
申请日：2008-10-21
申请人： Yoshitaka DOZEN , Tomoko TAMURA , Takuya TSURUME , Koji DAIRIKI
发明人： Yoshitaka DOZEN , Tomoko TAMURA , Takuya TSURUME , Koji DAIRIKI
IPC分类号： H01L29/786 , H01L21/304
CPC分类号： H01L27/1266 , H01L27/1214 , H01L27/1218 , H01L27/13 , H01L27/28 , H01L29/78603 , H01L2924/3511
摘要： Application form of and demand for an IC chip formed with a silicon wafer are expected to increase, and further reduction in cost is required. An object of the invention is to provide a structure of an IC chip and a process capable of producing at a lower cost. A feature of the invention is to use a metal film and a reactant having the metal film as a separation layer. An etching rate of the metal film or the reactant having metal is high, and a physical means in addition to a chemical means of etching the metal film or the reactant having metal can be used in the invention. Thus, the IDF chip can be manufactured more simply and easily in a short time.
摘要翻译：预期由硅晶片形成的IC芯片的应用形式和需求将增加，并且需要进一步降低成本。本发明的目的是提供一种IC芯片的结构和能够以较低成本生产的方法。本发明的一个特征是使用具有金属膜的金属膜和反应物作为分离层。金属膜或具有金属的反应物的蚀刻速率高，并且除了蚀刻金属膜的化学方法或具有金属的反应物之外的物理手段可以用于本发明。因此，可以在短时间内更容易地制造IDF芯片。

8. 发明申请

US20110084321A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110084321A1
公开(公告)日：2011-04-14
申请号：US12971918
申请日：2010-12-17
申请人： Takuya TSURUME , Yoshitaka DOZEN
发明人： Takuya TSURUME , Yoshitaka DOZEN
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L27/124 , H01L21/304 , H01L21/76898 , H01L27/1218 , H01L27/1266 , H01L27/13 , H01L29/78 , H01L29/78603 , H01L2924/0002 , H01L2924/00
摘要： It is an object of the present invention to provide a semiconductor device where, even in a case of stacking a plurality of semiconductor elements provided over a substrate, the stacked semiconductor elements can be electrically connected through the substrate, and a manufacturing method thereof. According to one feature of the present invention, a method for manufacturing a semiconductor device includes the steps of selectively forming a depression in an upper surface of a substrate or forming an opening which penetrates the upper surface through a back surface; forming an element group having a transistor so as to cover the upper surface of the substrate and the depression, or the opening; and exposing the element group formed in the depression or the opening by thinning the substrate from the back surface. A means for thinning the substrate can be performed by partially removing the substrate by performing grinding treatment, polishing treatment, etching by chemical treatment, or the like from the back surface of the substrate.
摘要翻译：本发明的目的是提供一种半导体器件，其中即使在堆叠设置在衬底上的多个半导体元件的情况下，堆叠的半导体元件也可以通过衬底电连接及其制造方法。根据本发明的一个特征，一种制造半导体器件的方法包括以下步骤：在衬底的上表面中选择性地形成凹陷或形成通过背面穿透上表面的开口; 形成具有晶体管以覆盖基板的上表面和凹陷或开口的元件组; 以及通过使基板从后表面变薄而暴露出形成在凹陷或开口中的元件组。可以通过从基板的背面进行研磨处理，研磨处理，化学处理等的蚀刻等部分去除基板来进行薄板化的方法。

9. 发明申请

US20120322212A1 WIRELESS CHIP AND MANUFACTURING METHOD THEREOF 有权
标题翻译：无线芯片及其制造方法
公开(公告)号：US20120322212A1
公开(公告)日：2012-12-20
申请号：US13596376
申请日：2012-08-28
申请人： Koji DAIRIKI , Junya MARUYAMA , Tomoko TAMURA , Eiji SUGIYAMA , Yoshitaka DOZEN
发明人： Koji DAIRIKI , Junya MARUYAMA , Tomoko TAMURA , Eiji SUGIYAMA , Yoshitaka DOZEN
IPC分类号： H01L21/56
CPC分类号： H01L27/1255 , H01L29/78621 , H01L29/78627 , H01L29/78648
摘要： It is an object of the present invention to reduce the cost of a wireless chip, further, to reduce the cost of a wireless chip by enabling the mass production of a wireless chip, and furthermore, to provide a downsized and lightweight wireless chip. A wireless chip in which a thin film integrated circuit peeled from a glass substrate or a quartz substrate is formed between a first base material and a second base material is provided according to the invention. As compared with a wireless chip formed from a silicon substrate, the wireless chip according to the invention realizes downsizing, thinness, and lightweight. The thin film integrated circuit included in the wireless chip according to the invention at least has an n-type thin film transistor having an LDD (Lightly Doped Drain) structure, a p-type thin film transistor having a single drain structure, and a conductive layer functioning as an antenna.
摘要翻译：本发明的目的在于降低无线芯片的成本，并且通过实现无线芯片的批量生产，进一步降低无线芯片的成本，此外，提供小型化，轻量化的无线芯片。根据本发明，提供一种其中从玻璃基板或石英基板剥离的薄膜集成电路形成在第一基材和第二基材之间的无线芯片。与由硅基板形成的无线芯片相比，根据本发明的无线芯片实现了小型化，薄型化和轻量化。包括在根据本发明的无线芯片中的薄膜集成电路至少具有具有LDD（轻掺杂漏极）结构的n型薄膜晶体管，具有单个漏极结构的p型薄膜晶体管和导电层作为天线起作用。

10. 发明申请

US20110073861A1 INTEGRATED CIRCUIT DEVICE AND METHOD FOR MANUFACTURING INTEGRATED CIRCUIT DEVICE 有权
标题翻译：集成电路装置及制造集成电路装置的方法
公开(公告)号：US20110073861A1
公开(公告)日：2011-03-31
申请号：US12902642
申请日：2010-10-12
申请人： Daiki YAMADA , Yoshitaka DOZEN , Eiji SUGIYAMA , Hidekazu TAKAHASHI
发明人： Daiki YAMADA , Yoshitaka DOZEN , Eiji SUGIYAMA , Hidekazu TAKAHASHI
IPC分类号： H01L29/786
CPC分类号： H01L27/1266 , H01L27/124 , H01L27/1292 , H01L27/1296 , H01L29/78621 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/81001 , H01L2924/00
摘要： An object of the present invention is to provide a structure of a thin film circuit portion and a method for manufacturing a thin film circuit portion by which an electrode for connecting to an external portion can be easily formed under a thin film circuit. A stacked body including a first insulating film, a thin film circuit formed over one surface of the first insulating film, a second insulating film formed over the thin film circuit, an electrode formed over the second insulating film, and a resin film formed over the electrode, is formed. A conductive film is formed adjacent to the other surface of the first insulating film of the stacked body to be overlapped with the electrode. The conductive film is irradiated with a laser.
摘要翻译：本发明的目的是提供薄膜电路部分的结构和薄膜电路部分的制造方法，通过该薄膜电路部分可以容易地在薄膜电路下形成用于连接到外部的电极。包括第一绝缘膜，在第一绝缘膜的一个表面上形成的薄膜电路，形成在薄膜电路上的第二绝缘膜，形成在第二绝缘膜上的电极和形成在第二绝缘膜上的树脂膜的层叠体电极。导电膜与层叠体的第一绝缘膜的另一表面相邻地形成为与电极重叠。用激光照射导电膜。

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