专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100317156A1 METHOD FOR MANUFACTURING INTEGRATED CIRCUIT 有权
标题翻译：制造集成电路的方法
公开(公告)号：US20100317156A1
公开(公告)日：2010-12-16
申请号：US12859878
申请日：2010-08-20
申请人： Takuya TSURUME , Junya MARUYAMA , Yoshitaka DOZEN
发明人： Takuya TSURUME , Junya MARUYAMA , Yoshitaka DOZEN
IPC分类号： H01L21/50
CPC分类号： H01L27/1266 , H01L21/76251 , H01L27/1214 , H05K3/20
摘要： A method for separating an integrated circuit formed by a thin film having a novel structure or a method for transferring the integrated circuit to another substrate, that is, so-called transposing method, has not been proposed. According to the present invention, in the case that an integrated circuit having a thin film having a novel structure formed over a substrate via a release layer is separated, the release layer is removed in the state that the thin film integrated circuit is fixated, the thin film integrated circuit is transposed to a supporting substrate having an adhesion surface, and the thin film integrated circuit is transposed to another substrate having an adhesion surface with higher strength of adhesion than that of the supporting substrate.
摘要翻译：用于将由具有新颖结构的薄膜形成的集成电路分离的方法或将集成电路转移到另一基板的方法，即所谓的转置方法尚未提出。根据本发明，在通过剥离层在基板上形成具有新颖结构的薄膜的集成电路被分离的情况下，在薄膜集成电路固定的状态下去除剥离层，薄膜集成电路被转置到具有粘合表面的支撑基板上，并且薄膜集成电路被转置到具有比支撑基板的粘合强度更高的粘附表面的另一基板。

2. 发明申请

US20120322212A1 WIRELESS CHIP AND MANUFACTURING METHOD THEREOF 有权
标题翻译：无线芯片及其制造方法
公开(公告)号：US20120322212A1
公开(公告)日：2012-12-20
申请号：US13596376
申请日：2012-08-28
申请人： Koji DAIRIKI , Junya MARUYAMA , Tomoko TAMURA , Eiji SUGIYAMA , Yoshitaka DOZEN
发明人： Koji DAIRIKI , Junya MARUYAMA , Tomoko TAMURA , Eiji SUGIYAMA , Yoshitaka DOZEN
IPC分类号： H01L21/56
CPC分类号： H01L27/1255 , H01L29/78621 , H01L29/78627 , H01L29/78648
摘要： It is an object of the present invention to reduce the cost of a wireless chip, further, to reduce the cost of a wireless chip by enabling the mass production of a wireless chip, and furthermore, to provide a downsized and lightweight wireless chip. A wireless chip in which a thin film integrated circuit peeled from a glass substrate or a quartz substrate is formed between a first base material and a second base material is provided according to the invention. As compared with a wireless chip formed from a silicon substrate, the wireless chip according to the invention realizes downsizing, thinness, and lightweight. The thin film integrated circuit included in the wireless chip according to the invention at least has an n-type thin film transistor having an LDD (Lightly Doped Drain) structure, a p-type thin film transistor having a single drain structure, and a conductive layer functioning as an antenna.
摘要翻译：本发明的目的在于降低无线芯片的成本，并且通过实现无线芯片的批量生产，进一步降低无线芯片的成本，此外，提供小型化，轻量化的无线芯片。根据本发明，提供一种其中从玻璃基板或石英基板剥离的薄膜集成电路形成在第一基材和第二基材之间的无线芯片。与由硅基板形成的无线芯片相比，根据本发明的无线芯片实现了小型化，薄型化和轻量化。包括在根据本发明的无线芯片中的薄膜集成电路至少具有具有LDD（轻掺杂漏极）结构的n型薄膜晶体管，具有单个漏极结构的p型薄膜晶体管和导电层作为天线起作用。

3. 发明申请

US20120241924A1 SEMICONDUCTOR DEVICE HAVING ANTENNA AND METHOD FOR MANUFACTURING THEREOF 审中-公开
标题翻译：具有天线的半导体器件及其制造方法
公开(公告)号：US20120241924A1
公开(公告)日：2012-09-27
申请号：US13468354
申请日：2012-05-10
申请人： Kyosuke ITO , Junya MARUYAMA , Takuya TSURUME , Shunpei YAMAZAKI
发明人： Kyosuke ITO , Junya MARUYAMA , Takuya TSURUME , Shunpei YAMAZAKI
IPC分类号： H01L23/66
CPC分类号： H01L27/1266 , G06K19/07749 , H01L27/1214 , H01L27/13 , H01L2224/95001 , H01Q1/2225 , H01Q7/00 , Y10T29/49018
摘要： The present invention provides an antenna in that the adhesive intensity of a conductive body formed on a base film is increased, and a semiconductor device including the antenna. The invention further provides a semiconductor device with high reliability that is formed by attaching an element formation layer and an antenna, wherein the element formation layer is not damaged due to a structure of the antenna. The semiconductor device includes the element formation layer provided over a substrate and the antenna provided over the element formation layer. The element formation layer and the antenna are electrically connected. The antenna has a base film and a conductive body, wherein at least a part of the conductive body is embedded in the base film. As a method for embedding the conductive body in the base film, a depression is formed in the base film and the conductive body is formed therein.
摘要翻译：本发明提供了一种天线，其特征在于，形成在基膜上的导电体的粘合强度增加，并且包括该天线的半导体器件。本发明还提供一种通过附着元件形成层和天线形成的具有高可靠性的半导体器件，其中元件形成层由于天线的结构而不被损坏。半导体器件包括设置在衬底上的元件形成层和设置在元件形成层上的天线。元件形成层和天线电连接。天线具有基膜和导电体，其中导电体的至少一部分嵌入基膜中。作为将导电体嵌入基膜中的方法，在基膜中形成凹部，在其中形成导电体。

4. 发明申请

US20100035407A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100035407A1
公开(公告)日：2010-02-11
申请号：US12578722
申请日：2009-10-14
申请人： Yuugo GOTO , Yumiko FUKUMOTO , Toru TAKAYAMA , Junya MARUYAMA , Takuya TSURUME
发明人： Yuugo GOTO , Yumiko FUKUMOTO , Toru TAKAYAMA , Junya MARUYAMA , Takuya TSURUME
IPC分类号： H01L21/30 , H01L21/283
CPC分类号： H01L27/1266 , G02F2001/13613 , H01L27/3246 , H01L51/524 , H01L51/5246 , H01L51/5253 , H01L51/56 , H01L2221/68368 , H01L2227/323 , H01L2227/326 , Y10S438/976 , Y10S438/977
摘要： It is an object of the invention to provide a peeling method which does not damage a peeling layer, and to perform peeling not only a peeling layer having a small-size area but also an entire peeling layer having a large-size area with a preferable yield. In the invention, after pasting a fixing substrate, a part of a glass substrate is removed by scribing or performing laser irradiation on the glass substrate which leads to providing a trigger. Then, peeling is performed with a preferable yield by performing peeling from the removed part. In addition, a crack is prevented by covering the entire face except for a connection portion of a terminal electrode (including a periphery region of the terminal electrode) with a resin.
摘要翻译：本发明的目的是提供一种不会损伤剥离层的剥离方法，并且不仅剥离具有小尺寸区域的剥离层，而且还可以剥离具有大尺寸区域的整个剥离层产量。在本发明中，在粘贴固定基板之后，通过在导致提供触发的玻璃基板上划线或进行激光照射来去除玻璃基板的一部分。然后，通过从去除部分剥离而以优选的收率进行剥离。此外，通过用树脂覆盖端子电极（包括端子电极的周边区域）的连接部分以外的整个面来防止裂纹。

5. 发明申请

US20100015737A1 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THEREOF, AND METHOD OF MANUFACTURING BASE MATERIAL 有权
标题翻译：半导体器件及其制造方法以及制造基片材料的方法
公开(公告)号：US20100015737A1
公开(公告)日：2010-01-21
申请号：US12566040
申请日：2009-09-24
申请人： Toru TAKAYAMA , Yuugo GOTO , Yumiko FUKUMOTO , Junya MARUYAMA , Takuya TSURUME
发明人： Toru TAKAYAMA , Yuugo GOTO , Yumiko FUKUMOTO , Junya MARUYAMA , Takuya TSURUME
IPC分类号： H01L21/30
CPC分类号： H01L27/1266 , H01L27/1214 , H01L33/0079
摘要： It is an object of the invention to provide a lightweight semiconductor device having a highly reliable sealing structure which can prevent ingress of impurities such as moisture that deteriorate element characteristics, and a method of manufacturing thereof. A protective film having superior gas barrier properties (which is a protective film that is likely to damage an element if the protective film is formed on the element directly) is previously formed on a heat-resistant substrate other than a substrate with the element formed thereon. The protective film is peeled off from the heat-resistant substrate, and transferred over the substrate with the element formed thereon so as to seal the element.
摘要翻译：本发明的目的是提供一种具有高度可靠的密封结构的轻质半导体器件及其制造方法，该密封结构能够防止元素特性恶化的诸如水分等杂质的侵入。具有优异阻气性的保护膜（其是如果在元件上直接形成保护膜时可能损坏元件的保护膜）预先在其上形成有元件的基板之外的耐热基板上形成。保护膜从耐热基材上剥离，并在其上形成的元件在基板上转印以密封元件。

6. 发明申请

US20120070919A1 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THEREOF, AND METHOD OF MANUFACTURING BASE MATERIAL 有权
标题翻译：半导体器件及其制造方法以及制造基片材料的方法
公开(公告)号：US20120070919A1
公开(公告)日：2012-03-22
申请号：US13303519
申请日：2011-11-23
申请人： Toru TAKAYAMA , Yuugo GOTO , Yumiko FUKUMOTO , Junya MARUYAMA , Takuya TSURUME
发明人： Toru TAKAYAMA , Yuugo GOTO , Yumiko FUKUMOTO , Junya MARUYAMA , Takuya TSURUME
IPC分类号： H01L21/20 , H01L21/28 , H01L33/36 , H01L21/318
CPC分类号： H01L27/1266 , H01L27/1214 , H01L33/0079
摘要： It is an object of the invention to provide a lightweight semiconductor device having a highly reliable sealing structure which can prevent ingress of impurities such as moisture that deteriorate element characteristics, and a method of manufacturing thereof. A protective film having superior gas barrier properties (which is a protective film that is likely to damage an element if the protective film is formed on the element directly) is previously formed on a heat-resistant substrate other than a substrate with the element formed thereon. The protective film is peeled off from the heat-resistant substrate, and transferred over the substrate with the element formed thereon so as to seal the element.
摘要翻译：本发明的目的是提供一种具有高度可靠的密封结构的轻质半导体器件及其制造方法，该密封结构能够防止元素特性恶化的诸如水分等杂质的侵入。具有优异阻气性的保护膜（其是如果在元件上直接形成保护膜时可能损坏元件的保护膜）预先在其上形成有元件的基板之外的耐热基板上形成。保护膜从耐热基材上剥离，并在其上形成的元件在基板上转印以密封元件。

7. 发明申请

US20120299025A1 MANUFACTURING METHOD OF LIGHT EMITTING DEVICE AND MANUFACTURING DEVICE THEREOF 有权
公开(公告)号：US20120299025A1
公开(公告)日：2012-11-29
申请号：US13559963
申请日：2012-07-27
申请人： Junya MARUYAMA , Toru TAKAYAMA , Yumiko OHNO
发明人： Junya MARUYAMA , Toru TAKAYAMA , Yumiko OHNO
IPC分类号： H01L27/15
CPC分类号： H01L51/524 , H01L51/5259 , H01L51/56
摘要： The present invention provides a structure in which a pixel region 13 is surrounded by a first sealing material (having higher viscosity than a second sealing material) 16 including a spacer (filler, minute particles and/or the like) which maintains a gap between the two substrates, filled with a few drops of the transparent second sealing material 17a which is spread in the region; and sealed by using the first sealing material 16 and the second sealing material 17.

8. 发明申请

US20120286315A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120286315A1
公开(公告)日：2012-11-15
申请号：US13558374
申请日：2012-07-26
申请人： Toru TAKAYAMA , Junya MARUYAMA , Yumiko OHNO , Masakazu MURAKAMI , Toshiji HAMATANI , Hideaki KUWABARA , Shunpei YAMAZAKI
发明人： Toru TAKAYAMA , Junya MARUYAMA , Yumiko OHNO , Masakazu MURAKAMI , Toshiji HAMATANI , Hideaki KUWABARA , Shunpei YAMAZAKI
IPC分类号： H01L27/32
CPC分类号： H01L27/3276 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L27/1266 , H01L27/14634 , H01L27/14643 , H01L27/14683 , H01L27/3272 , H01L29/66757 , H01L29/78603 , H01L31/105 , H01L51/0024 , H01L51/003 , H01L51/5212 , H01L51/5253 , H01L2221/68368
摘要： (OBJECT) The object is to provide a lightened semiconductor device and a manufacturing method thereof by pasting a layer to be peeled to various base materials.(MEANS FOR SOLVING THE PROBLEM) In the present invention, a layer to be peeled is formed on a substrate, then a seal substrate provided with an etching stopper film is pasted with a binding material on the layer to be peeled, followed by removing only the seal substrate by etching or polishing. The remaining etching stopper film is functioned as a blocking film. In addition, a magnet sheet may be pasted as a pasting member.
摘要翻译：（目的）本发明的目的是提供一种减轻半导体器件及其制造方法，该方法是将待剥离的层粘贴到各种基材上。（解决问题的手段）在本发明中，在基板上形成被剥离层，然后将具有蚀刻阻挡膜的密封基板上的粘合材料粘贴在被剥离层上，然后仅除去密封衬底通过蚀刻或抛光。剩余的蚀刻阻挡膜用作阻挡膜。此外，可以将磁片作为粘贴部件粘贴。

9. 发明申请

US20110312111A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110312111A1
公开(公告)日：2011-12-22
申请号：US13217311
申请日：2011-08-25
申请人： Shunpei YAMAZAKI , Toru TAKAYAMA , Junya MARUYAMA , Yumiko OHNO
发明人： Shunpei YAMAZAKI , Toru TAKAYAMA , Junya MARUYAMA , Yumiko OHNO
IPC分类号： H01L33/50
CPC分类号： H01L27/1218 , H01L23/291 , H01L27/1214 , H01L27/1266 , H01L27/3244 , H01L29/66757 , H01L29/78603 , H01L51/0002 , H01L51/0021 , H01L51/0024 , H01L51/003 , H01L2221/68368 , H01L2924/0002 , Y10S438/928 , Y10S438/982 , H01L2924/00
摘要： It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.
摘要翻译：本发明的目的是提供一种不会对被剥离层造成损伤的剥离方法，并且不仅使表面积小的层被剥离，而且还允许具有大表面积的被剥离层要完全去皮。此外，本发明的另一个目的是将要剥离的层粘合到各种基材上以提供更轻的半导体器件及其制造方法。特别地，目的是将由TFT表示的各种元素（薄膜二极管，包含硅的PIN结的光电转换元件或硅电阻元件）粘合到柔性膜上以提供更轻的半导体器件和其制造方法。

10. 发明申请

US20100195033A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100195033A1
公开(公告)日：2010-08-05
申请号：US12759999
申请日：2010-04-14
申请人： Toru TAKAYAMA , Junya MARUYAMA , Yumiko OHNO , Masakazu MURAKAMI , Toshiji HAMATANI , Hideaki KUWABARA , Shunpei YAMAZAKI
发明人： Toru TAKAYAMA , Junya MARUYAMA , Yumiko OHNO , Masakazu MURAKAMI , Toshiji HAMATANI , Hideaki KUWABARA , Shunpei YAMAZAKI
IPC分类号： G02F1/1333
CPC分类号： H01L27/3276 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L27/1266 , H01L27/14634 , H01L27/14643 , H01L27/14683 , H01L27/3272 , H01L29/66757 , H01L29/78603 , H01L31/105 , H01L51/0024 , H01L51/003 , H01L51/5212 , H01L51/5253 , H01L2221/68368
摘要： (OBJECT) The object is to provide a lightened semiconductor device and a manufacturing method thereof by pasting a layer to be peeled to various base materials.(MEANS FOR SOLVING THE PROBLEM) In the present invention, a layer to be peeled is formed on a substrate, then a seal substrate provided with an etching stopper film is pasted with a binding material on the layer to be peeled, followed by removing only the seal substrate by etching or polishing. The remaining etching stopper film is functioned as a blocking film. In addition, a magnet sheet may be pasted as a pasting member.
摘要翻译：（目的）本发明的目的是提供一种减轻半导体器件及其制造方法，该方法是将待剥离的层粘贴到各种基材上。（解决问题的手段）在本发明中，在基板上形成被剥离层，然后将具有蚀刻阻挡膜的密封基板上的粘合材料粘贴在被剥离层上，然后仅除去密封衬底通过蚀刻或抛光。剩余的蚀刻阻挡膜用作阻挡膜。此外，可以将磁片作为粘贴部件粘贴。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式