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1. 发明申请

US20110233556A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110233556A1
公开(公告)日：2011-09-29
申请号：US13157338
申请日：2011-06-10
申请人： Eiji SUGIYAMA , Yoshitaka DOZEN , Hisashi OHTANI , Takuya TSURUME
发明人： Eiji SUGIYAMA , Yoshitaka DOZEN , Hisashi OHTANI , Takuya TSURUME
IPC分类号： H01L29/786
CPC分类号： H01L27/1266 , H01L23/145 , H01L23/49855 , H01L27/105 , H01L27/115 , H01L27/1248 , H01L27/13 , H01L29/78603 , H01L2223/6677 , H01L2224/16225 , H01L2924/07811 , H01L2924/09701 , H01L2924/12044 , H01Q1/2225 , H01Q1/2283 , H01L2924/00
摘要： The present invention provides a semiconductor device which is not easily damaged by external local pressure. The present invention further provides a method for manufacturing a highly-reliable semiconductor device, which is not destructed by external local pressure, with a high yield. A structure body, in which high-strength fiber of an organic compound or an inorganic compound is impregnated with an organic resin, is provided over an element layer having a semiconductor element formed using a non-single crystal semiconductor layer, and heating and pressure bonding are performed, whereby a semiconductor device is manufactured, to which the element layer and the structure body in which the high-strength fiber of an organic compound or an inorganic compound is impregnated with the organic resin are firmly fixed together.
摘要翻译：本发明提供一种不容易被外部局部压力损坏的半导体器件。本发明还提供一种以高产率制造不被外部局部压力破坏的高可靠性半导体器件的方法。在具有使用非单晶半导体层形成的半导体元件的元件层上设置有机化合物或无机化合物的高强度纤维被有机树脂浸渍的结构体，加热和压接由此制造半导体器件，将有机化合物或无机化合物的高强度纤维与有机树脂浸渍的元件层和结构体牢固地固定在一起。

2. 发明申请

US20100200663A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100200663A1
公开(公告)日：2010-08-12
申请号：US12767909
申请日：2010-04-27
申请人： Yoshitaka DOZEN , Eiji SUGIYAMA , Hisashi OHTANI , Takuya TSURUME
发明人： Yoshitaka DOZEN , Eiji SUGIYAMA , Hisashi OHTANI , Takuya TSURUME
IPC分类号： G06K19/07 , H01L29/12 , H01L23/538
CPC分类号： H01L27/1266 , H01L27/1214 , H01L27/1255
摘要： In the present application, is disclosed a method of manufacturing a flexible semiconductor device having an excellent reliability and tolerance to the loading of external pressure. The method includes the steps of: forming a separation layer over a substrate having an insulating surface; forming an element layer including a semiconductor element comprising a non-single crystal semiconductor layer, over the separation layer; forming an organic resin layer over the element layer; providing a fibrous body formed of an organic compound or an inorganic compound on the organic resin layer; heating the organic resin layer; and separating the element layer from the separation layer. This method allows the formation of a flexible semiconductor device having a sealing layer in which the fibrous body is impregnated with the organic resin.
摘要翻译：在本申请中，公开了一种制造柔性半导体器件的方法，所述柔性半导体器件对外部压力的加载具有优异的可靠性和耐受性。该方法包括以下步骤：在具有绝缘表面的基底上形成分离层; 在分离层上形成包括非单晶半导体层的半导体元件的元件层; 在元件层上形成有机树脂层; 在有机树脂层上提供由有机化合物或无机化合物形成的纤维体; 加热有机树脂层; 并将元件层与分离层分离。该方法允许形成具有密封层的柔性半导体器件，其中纤维体浸渍有机树脂。

3. 发明申请

US20110024853A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110024853A1
公开(公告)日：2011-02-03
申请号：US12892961
申请日：2010-09-29
申请人： Eiji SUGIYAMA , Yoshitaka DOZEN , Hisashi OHTANI , Takuya TSURUME
发明人： Eiji SUGIYAMA , Yoshitaka DOZEN , Hisashi OHTANI , Takuya TSURUME
IPC分类号： H01L29/66
CPC分类号： H01L27/1266 , H01L23/145 , H01L23/49855 , H01L27/105 , H01L27/115 , H01L27/1248 , H01L27/13 , H01L29/78603 , H01L2223/6677 , H01L2224/16225 , H01L2924/07811 , H01L2924/12032 , H01L2924/12044 , H01L2924/13091 , H01Q1/2225 , H01Q1/2283 , H01L2924/00
摘要： The present invention provides a semiconductor device which is not easily damaged by external local pressure. The present invention further provides a manufacturing method of a highly-reliable semiconductor device, which is not destroyed by external local pressure, with a high yield. A structure body, in which high-strength fiber of an organic compound or an inorganic compound is impregnated with an organic resin, is provided over an element substrate having a semiconductor element formed using a single crystal semiconductor region, and heating and pressure bonding are performed, whereby a semiconductor device is manufactured, to which the element substrate and the structure body in which the high-strength fiber of an organic compound or an inorganic compound is impregnated with the organic resin are fixed together.
摘要翻译：本发明提供一种不容易被外部局部压力损坏的半导体器件。本发明还提供了一种高可靠性的半导体器件的制造方法，其不被外部局部压力破坏，而且产率高。在具有使用单晶半导体区域形成的半导体元件的元件基板上设置有有机化合物或无机化合物的高强度纤维被有机树脂浸渍的结构体，进行加热和压接由此制造半导体器件，元件基板和有机化合物的高强度纤维或无机化合物浸渍有机树脂的结构体固定在一起。

4. 发明申请

US20110171778A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110171778A1
公开(公告)日：2011-07-14
申请号：US13071629
申请日：2011-03-25
申请人： Tomoko TAMURA , Eiji SUGIYAMA , Yoshitaka DOZEN , Koji DAIRIKI , Takuya TSURUME
发明人： Tomoko TAMURA , Eiji SUGIYAMA , Yoshitaka DOZEN , Koji DAIRIKI , Takuya TSURUME
IPC分类号： H01L21/50 , H01L21/56
CPC分类号： H01L21/02381 , H01L21/84 , H01L27/1214 , H01L27/1266 , H01L27/13 , H01L2221/68359 , H01L2221/68368 , H01L2224/81001
摘要： A release layer formed over a substrate; at least one of thin film integrated circuits is formed over the release layer; a film is formed over each of the at least one of thin film integrated circuits; and the release layer is removed by using an etchant; thus, the at least one of thin film integrated circuits is peeled from the substrate. A semiconductor device is formed by sealing the peeled thin film integrated circuit by lamination or the like.
摘要翻译：形成在衬底上的释放层; 在剥离层上形成薄膜集成电路中的至少一个; 在薄膜集成电路中的至少一个上形成膜; 并通过使用蚀刻剂除去释放层; 因此，薄膜集成电路中的至少一个从基板剥离。半导体器件通过层压等密封剥离的薄膜集成电路而形成。

5. 发明申请

US20100317156A1 METHOD FOR MANUFACTURING INTEGRATED CIRCUIT 有权
标题翻译：制造集成电路的方法
公开(公告)号：US20100317156A1
公开(公告)日：2010-12-16
申请号：US12859878
申请日：2010-08-20
申请人： Takuya TSURUME , Junya MARUYAMA , Yoshitaka DOZEN
发明人： Takuya TSURUME , Junya MARUYAMA , Yoshitaka DOZEN
IPC分类号： H01L21/50
CPC分类号： H01L27/1266 , H01L21/76251 , H01L27/1214 , H05K3/20
摘要： A method for separating an integrated circuit formed by a thin film having a novel structure or a method for transferring the integrated circuit to another substrate, that is, so-called transposing method, has not been proposed. According to the present invention, in the case that an integrated circuit having a thin film having a novel structure formed over a substrate via a release layer is separated, the release layer is removed in the state that the thin film integrated circuit is fixated, the thin film integrated circuit is transposed to a supporting substrate having an adhesion surface, and the thin film integrated circuit is transposed to another substrate having an adhesion surface with higher strength of adhesion than that of the supporting substrate.
摘要翻译：用于将由具有新颖结构的薄膜形成的集成电路分离的方法或将集成电路转移到另一基板的方法，即所谓的转置方法尚未提出。根据本发明，在通过剥离层在基板上形成具有新颖结构的薄膜的集成电路被分离的情况下，在薄膜集成电路固定的状态下去除剥离层，薄膜集成电路被转置到具有粘合表面的支撑基板上，并且薄膜集成电路被转置到具有比支撑基板的粘合强度更高的粘附表面的另一基板。

6. 发明申请

US20110207292A1 METHOD FOR MANUFACTURING THIN FILM INTEGRATED CIRCUIT, AND ELEMENT SUBSTRATE 有权
标题翻译：制造薄膜集成电路和元件基板的方法
公开(公告)号：US20110207292A1
公开(公告)日：2011-08-25
申请号：US13100316
申请日：2011-05-04
申请人： Yoshitaka DOZEN , Tomoko TAMURA , Takuya TSURUME , Koji DAIRIKI
发明人： Yoshitaka DOZEN , Tomoko TAMURA , Takuya TSURUME , Koji DAIRIKI
IPC分类号： H01L21/762
CPC分类号： H01L27/1266 , H01L27/1214 , H01L27/1218 , H01L27/13 , H01L27/28 , H01L29/78603 , H01L2924/3511
摘要： Application form of and demand for an IC chip formed with a silicon wafer are expected to increase, and further reduction in cost is required. An object of the invention is to provide a structure of an IC chip and a process capable of producing at a lower cost. A feature of the invention is to use a metal film and a reactant having the metal film as a separation layer. An etching rate of the metal film or the reactant having metal is high, and a physical means in addition to a chemical means of etching the metal film or the reactant having metal can be used in the invention. Thus, the IDF chip can be manufactured more simply and easily in a short time.
摘要翻译：预期由硅晶片形成的IC芯片的应用形式和需求将增加，并且需要进一步降低成本。本发明的目的是提供一种IC芯片的结构和能够以较低成本生产的方法。本发明的一个特征是使用具有金属膜的金属膜和反应物作为分离层。金属膜或具有金属的反应物的蚀刻速率高，并且除了蚀刻金属膜的化学方法或具有金属的反应物之外的物理手段可以用于本发明。因此，可以在短时间内更容易地制造IDF芯片。

7. 发明申请

US20090050964A1 METHOD FOR MANUFACTURING THIN FILM INTEGRATED CIRCUIT, AND ELEMENT SUBSTRATE 有权
标题翻译：制造薄膜集成电路和元件基板的方法
公开(公告)号：US20090050964A1
公开(公告)日：2009-02-26
申请号：US12255117
申请日：2008-10-21
申请人： Yoshitaka DOZEN , Tomoko TAMURA , Takuya TSURUME , Koji DAIRIKI
发明人： Yoshitaka DOZEN , Tomoko TAMURA , Takuya TSURUME , Koji DAIRIKI
IPC分类号： H01L29/786 , H01L21/304
CPC分类号： H01L27/1266 , H01L27/1214 , H01L27/1218 , H01L27/13 , H01L27/28 , H01L29/78603 , H01L2924/3511
摘要： Application form of and demand for an IC chip formed with a silicon wafer are expected to increase, and further reduction in cost is required. An object of the invention is to provide a structure of an IC chip and a process capable of producing at a lower cost. A feature of the invention is to use a metal film and a reactant having the metal film as a separation layer. An etching rate of the metal film or the reactant having metal is high, and a physical means in addition to a chemical means of etching the metal film or the reactant having metal can be used in the invention. Thus, the IDF chip can be manufactured more simply and easily in a short time.
摘要翻译：预期由硅晶片形成的IC芯片的应用形式和需求将增加，并且需要进一步降低成本。本发明的目的是提供一种IC芯片的结构和能够以较低成本生产的方法。本发明的一个特征是使用具有金属膜的金属膜和反应物作为分离层。金属膜或具有金属的反应物的蚀刻速率高，并且除了蚀刻金属膜的化学方法或具有金属的反应物之外的物理手段可以用于本发明。因此，可以在短时间内更容易地制造IDF芯片。

8. 发明申请

US20110084321A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110084321A1
公开(公告)日：2011-04-14
申请号：US12971918
申请日：2010-12-17
申请人： Takuya TSURUME , Yoshitaka DOZEN
发明人： Takuya TSURUME , Yoshitaka DOZEN
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L27/124 , H01L21/304 , H01L21/76898 , H01L27/1218 , H01L27/1266 , H01L27/13 , H01L29/78 , H01L29/78603 , H01L2924/0002 , H01L2924/00
摘要： It is an object of the present invention to provide a semiconductor device where, even in a case of stacking a plurality of semiconductor elements provided over a substrate, the stacked semiconductor elements can be electrically connected through the substrate, and a manufacturing method thereof. According to one feature of the present invention, a method for manufacturing a semiconductor device includes the steps of selectively forming a depression in an upper surface of a substrate or forming an opening which penetrates the upper surface through a back surface; forming an element group having a transistor so as to cover the upper surface of the substrate and the depression, or the opening; and exposing the element group formed in the depression or the opening by thinning the substrate from the back surface. A means for thinning the substrate can be performed by partially removing the substrate by performing grinding treatment, polishing treatment, etching by chemical treatment, or the like from the back surface of the substrate.
摘要翻译：本发明的目的是提供一种半导体器件，其中即使在堆叠设置在衬底上的多个半导体元件的情况下，堆叠的半导体元件也可以通过衬底电连接及其制造方法。根据本发明的一个特征，一种制造半导体器件的方法包括以下步骤：在衬底的上表面中选择性地形成凹陷或形成通过背面穿透上表面的开口; 形成具有晶体管以覆盖基板的上表面和凹陷或开口的元件组; 以及通过使基板从后表面变薄而暴露出形成在凹陷或开口中的元件组。可以通过从基板的背面进行研磨处理，研磨处理，化学处理等的蚀刻等部分去除基板来进行薄板化的方法。

9. 发明申请

US20090065590A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090065590A1
公开(公告)日：2009-03-12
申请号：US12204320
申请日：2008-09-04
申请人： Tomoyuki AOKI , Takuya TSURUME , Hiroki ADACHI , Nozomi HORIKOSHI , Hisashi OHTANI
发明人： Tomoyuki AOKI , Takuya TSURUME , Hiroki ADACHI , Nozomi HORIKOSHI , Hisashi OHTANI
IPC分类号： G06K19/077 , H01L21/56 , H01L23/29
CPC分类号： H01L23/29 , G06K19/07749 , H01L21/563 , H01L23/145 , H01L23/295 , H01L23/3121 , H01L23/60 , H01L23/66 , H01L27/1214 , H01L27/1266 , H01L27/13 , H01L2223/6677 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/09701 , H01L2924/12032 , H01L2924/12044 , H01L2924/19041 , H01L2924/3025 , Y10T428/31522 , H01L2924/00
摘要： A separation layer and a semiconductor element layer including a thin film transistor are formed. A conductive resin electrically connected to the semiconductor element layer is formed. A first sealing layer including a fiber and an organic resin layer is formed over the semiconductor element layer and the conductive resin. A groove is formed in the first sealing layer, the semiconductor element layer, and the separation layer. A liquid is dropped into the groove to separate the separation layer and the semiconductor element layer. The first sealing layer over the conductive resin is removed to form an opening. A set of the first sealing layer and the semiconductor element layer is divided into a chip. The chip is bonded to an antenna formed over a base material. A second sealing layer including a fiber and an organic resin layer is formed so as to cover the antenna and the chip.
摘要翻译：形成包括薄膜晶体管的分离层和半导体元件层。形成与半导体元件层电连接的导电树脂。包含纤维和有机树脂层的第一密封层形成在半导体元件层和导电树脂上。在第一密封层，半导体元件层和分离层中形成凹槽。将液体滴入槽中以分离分离层和半导体元件层。去除导电树脂上的第一密封层以形成开口。一组第一密封层和半导体元件层被分成芯片。芯片结合到形成在基材上的天线。形成包括纤维和有机树脂层的第二密封层，以覆盖天线和芯片。

10. 发明申请

US20120241924A1 SEMICONDUCTOR DEVICE HAVING ANTENNA AND METHOD FOR MANUFACTURING THEREOF 审中-公开
标题翻译：具有天线的半导体器件及其制造方法
公开(公告)号：US20120241924A1
公开(公告)日：2012-09-27
申请号：US13468354
申请日：2012-05-10
申请人： Kyosuke ITO , Junya MARUYAMA , Takuya TSURUME , Shunpei YAMAZAKI
发明人： Kyosuke ITO , Junya MARUYAMA , Takuya TSURUME , Shunpei YAMAZAKI
IPC分类号： H01L23/66
CPC分类号： H01L27/1266 , G06K19/07749 , H01L27/1214 , H01L27/13 , H01L2224/95001 , H01Q1/2225 , H01Q7/00 , Y10T29/49018
摘要： The present invention provides an antenna in that the adhesive intensity of a conductive body formed on a base film is increased, and a semiconductor device including the antenna. The invention further provides a semiconductor device with high reliability that is formed by attaching an element formation layer and an antenna, wherein the element formation layer is not damaged due to a structure of the antenna. The semiconductor device includes the element formation layer provided over a substrate and the antenna provided over the element formation layer. The element formation layer and the antenna are electrically connected. The antenna has a base film and a conductive body, wherein at least a part of the conductive body is embedded in the base film. As a method for embedding the conductive body in the base film, a depression is formed in the base film and the conductive body is formed therein.
摘要翻译：本发明提供了一种天线，其特征在于，形成在基膜上的导电体的粘合强度增加，并且包括该天线的半导体器件。本发明还提供一种通过附着元件形成层和天线形成的具有高可靠性的半导体器件，其中元件形成层由于天线的结构而不被损坏。半导体器件包括设置在衬底上的元件形成层和设置在元件形成层上的天线。元件形成层和天线电连接。天线具有基膜和导电体，其中导电体的至少一部分嵌入基膜中。作为将导电体嵌入基膜中的方法，在基膜中形成凹部，在其中形成导电体。

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