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    • 1. 发明授权
    • Nonvolatile metal oxide memory element and nonvolatile memory device
    • 非挥发性金属氧化物存储元件和非易失性存储器件
    • US08450715B2
    • 2013-05-28
    • US12884000
    • 2010-09-16
    • Kensuke TakanoKatsuyuki SekineYoshio OzawaRyota FujitsukaMitsuru Sato
    • Kensuke TakanoKatsuyuki SekineYoshio OzawaRyota FujitsukaMitsuru Sato
    • H01L45/00
    • H01L45/08G11C13/0007G11C2213/32G11C2213/71G11C2213/72H01L27/2409H01L27/2481H01L45/1233H01L45/146H01L45/1616H01L45/1625H01L45/165H01L45/1675
    • According to one embodiment, a nonvolatile memory device includes a plurality of nonvolatile memory elements each of that includes a resistance change film. The resistance change film is capable of recording information by transitioning between a plurality of states having different resistances in response to at least one of a voltage applied to the resistance change film or a current passed through the resistance change film, and the resistance change film includes an oxide containing at least one element selected from the group consisting of Hf, Zr, Ni, Ta, W, Co, Al, Fe, Mn, Cr, and Nb. An impurity element contained in the resistance change film is at least one element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, La, V, Ta, B, Ga, In, Tl, C, Si, Ge, Sn, Pb, N, P, As, Sb, Bi, S, Se, and Te, and the impurity element has an absolute value of standard Gibbs energy of oxide formation larger than an absolute value of standard Gibbs energy of oxide formation of the element contained in the oxide.
    • 根据一个实施例,非易失性存储器件包括多个非易失性存储元件,每个非易失性存储元件包括电阻变化膜。 电阻变化膜能够响应于施加到电阻变化膜的电压或通过电阻变化膜的电流中的至少一个而在具有不同电阻的多个状态之间进行转换来记录信息,并且电阻变化膜包括 包含选自Hf,Zr,Ni,Ta,W,Co,Al,Fe,Mn,Cr和Nb中的至少一种元素的氧化物。 包含在电阻变化膜中的杂质元素是选自Mg,Ca,Sr,Ba,Sc,Y,La,V,Ta,B,Ga,In,Tl,C,Si中的至少一种元素, Ge,Sn,Pb,N,P,As,Sb,Bi,S,Se和Te,并且杂质元素的氧化物形成的标准吉布斯能量的绝对值大于氧化物形成的标准吉布斯能量的绝对值 的氧化物中所含的元素。
    • 6. 发明授权
    • Semiconductor device
    • 半导体器件
    • US07635890B2
    • 2009-12-22
    • US11783934
    • 2007-04-13
    • Yoshio OzawaAkihito YamamotoMasayuki TanakaKatsuaki NatoriKatsuyuki SekineDaisuke NishidaRyota Fujitsuka
    • Yoshio OzawaAkihito YamamotoMasayuki TanakaKatsuaki NatoriKatsuyuki SekineDaisuke NishidaRyota Fujitsuka
    • H01L29/76
    • H01L29/7883H01L27/115H01L27/11521H01L29/42324
    • A semiconductor device includes a semiconductor substrate, a plurality of nonvolatile memory cells provided on the semiconductor substrate, each of the plurality of nonvolatile memory cells comprising a first insulating film provided on the semiconductor substrate, a charge storage layer provided on the first insulating film, a control gate electrode provided above the charge storage layer, a second insulating film provided between the control gate electrode and the charge storage layer, the second insulating film between adjacent charge storage layers including a first region having permittivity lower than that of the second insulating film on a top surface of the charge storage layer in a cross-section view of a channel width direction of the nonvolatile memory cell, and the first region having composition differing from that of the second insulating film on the top surface of the charge storage layer.
    • 半导体器件包括半导体衬底,设置在半导体衬底上的多个非易失性存储单元,所述多个非易失性存储单元中的每一个包括设置在所述半导体衬底上的第一绝缘膜,设置在所述第一绝缘膜上的电荷存储层, 设置在所述电荷存储层上方的控制栅电极,设置在所述控制栅电极和所述电荷存储层之间的第二绝缘膜,所述相邻电荷存储层之间的所述第二绝缘膜包括具有低于所述第二绝缘膜的介电常数的第一区域 在电荷存储层的顶表面上,以非易失性存储单元的沟道宽度方向的横截面视图,并且第一区域具有与电荷存储层的顶表面上的第二绝缘膜不同的组成。