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1. 发明授权

US5132749A Semiconductor device 失效
公开(公告)号：US5132749A
公开(公告)日：1992-07-21
申请号：US665593
申请日：1991-03-06
申请人： Yoshiki Nishibayashi , Hiromu Shiomi , Maoji Fujimori
发明人： Yoshiki Nishibayashi , Hiromu Shiomi , Maoji Fujimori
IPC分类号： H01L29/861 , H01L29/16 , H01L29/47 , H01L29/872
CPC分类号： H01L29/1602
摘要： Doping a dopant into a diamond semiconductor causes lattice defects. The pn junction diode or the Schottky junction diode made from diamond has low break down voltage and high reverse leakage current owing to the lattice defects. A non-doped or low doped diamond layer with high resistivity is epitaxially grown between the N-type diamond layer and the p-type diamond layer in the pn junction diode or between the metal layer and the doped diamond layer in the Schottky diode. The intermediate layer heightens the break down voltage and decreases the reverse leakage current.

2. 发明授权

US5757032A Semiconductor diamond device having improved metal-diamond contact for excellent operating stability at elevated temperature 失效
标题翻译：半导体金刚石器件具有改进的金刚石接触，在高温下具有出色的操作稳定性
公开(公告)号：US5757032A
公开(公告)日：1998-05-26
申请号：US510220
申请日：1995-08-02
申请人： Yoshiki Nishibayashi , Hiromu Shiomi , Shin-ichi Shikata
发明人： Yoshiki Nishibayashi , Hiromu Shiomi , Shin-ichi Shikata
IPC分类号： H01L21/28 , H01L21/04 , H01L29/43 , H01L29/47 , H01L29/872 , H01L31/0312 , H01L23/48 , H01L23/52 , H01L27/095
CPC分类号： H01L21/043 , H01L21/0435
摘要： A semiconductor device comprising an electrode formed on a semiconductor diamond. The electrode includes a first metal section which is in contact with a surface of the semiconductor diamond and which has a thickness of 100 nm or smaller, and further including a second metal section which is in contact with the first metal section and which has a thickness of equal to or larger than four times the thickness of the first metal section. The second metal section is made of a metal having a melting point of 1000.degree. C. or higher.
摘要翻译：一种半导体器件，包括形成在半导体金刚石上的电极。电极包括与半导体金刚石的表面接触并且具有100nm或更小的厚度的第一金属部分，并且还包括与第一金属部分接触的第二金属部分，并且具有厚度等于或大于第一金属部分的厚度的四倍。第二金属部分由熔点为1000℃以上的金属制成。

3. 发明授权

US5252840A Semiconductor device having differently doped diamond layers 失效
标题翻译：具有不同掺杂金刚石层的半导体器件
公开(公告)号：US5252840A
公开(公告)日：1993-10-12
申请号：US697438
申请日：1991-05-09
申请人： Hiromu Shiomi , Yoshiki Nishibayashi , Naoji Fujimori
发明人： Hiromu Shiomi , Yoshiki Nishibayashi , Naoji Fujimori
IPC分类号： H01L21/04 , H01L21/205 , H01L29/16 , H01L29/47 , H01L29/812 , H01L29/872 , H01L29/161 , H01L29/20
CPC分类号： H01L29/872 , H01L21/02376 , H01L21/02381 , H01L21/02433 , H01L21/02444 , H01L21/02527 , H01L21/02579 , H01L21/0262 , H01L29/1602 , H01L29/6603 , H01L29/66045 , H01L29/812
摘要： A semiconductor device having active parts made from semiconductor diamond. The active parts include a high doped diamond layer for supplying free carriers and a non- or low doped diamond layer for giving the free carriers a conductive region. The free carriers are transferred from the high doped diamond layer to the non- or low doped diamond layer by diffusion or an applied electric field. Since the free carriers move at high speeds in the non- or low doped diamond layer without being scattered by dopant atoms, the semiconductor device is applicable to high frequency devices with stability against a change in temperature.

4. 发明授权

US5874775A Diamond heat sink including microchannel therein and methods for manufacturing diamond heat sinks 失效
标题翻译：金刚石散热器，其中包括微通道及其制造金刚石散热器的方法
公开(公告)号：US5874775A
公开(公告)日：1999-02-23
申请号：US840161
申请日：1997-04-14
申请人： Hiromu Shiomi , Hideaki Nakahata , Yoshiki Nishibayashi , Shin-ichi Shikata
发明人： Hiromu Shiomi , Hideaki Nakahata , Yoshiki Nishibayashi , Shin-ichi Shikata
IPC分类号： H01L23/373 , H01L23/38 , H01L23/34 , H01L23/06
CPC分类号： H01L23/38 , H01L23/3732 , H01L2924/0002 , Y10S257/93
摘要： A diamond heat sink of the present invention comprises: a support layer consisting of substantially undoped diamond; a heat sensitive layer consisting of doped diamond, disposed on the surface of the support layer; an insulation layer consisting of substantially undoped diamond, disposed on a predetermined region in the surface of the heat sensitive layer; electrodes disposed on the heat sensitive layer, wherein an exothermal device is placed on the surface of the insulation layer; and a cooling structure disposed on the backside of the support layer, the cooling structure having at least one microchannel, the microchannel being defined by a diamond, wherein an exothermal device is to be placed on the surface of the insulation layer; and wherein the heat sensitive layer and the electrodes form a thermistor, the electrical resistivity of the thermistor being capable of varying corresponding to heat generated from the exothermal device and transferred through the insulation layer to the thermistor.
摘要翻译：本发明的金刚石散热器包括：由基本上未掺杂的金刚石构成的支撑层; 由掺杂金刚石构成的热敏层，设置在支撑层的表面上; 由基本上未掺杂的金刚石构成的绝缘层，设置在热敏层表面的预定区域上; 设置在热敏层上的电极，其中放热装置放置在绝缘层的表面上; 以及设置在所述支撑层的背面上的冷却结构，所述冷却结构具有至少一个微通道，所述微通道由金刚石限定，其中放热装置将被放置在所述绝缘层的表面上; 并且其中所述热敏层和所述电极形成热敏电阻，所述热敏电阻的电阻率能够相应于从所述放热器件产生的热量而变化并通过所述绝缘层传递到所述热敏电阻器。

5. 发明授权

US5729074A Micro mechanical component and production process thereof 失效
公开(公告)号：US5729074A
公开(公告)日：1998-03-17
申请号：US407155
申请日：1995-03-20
申请人： Hiromu Shiomi , Yoshiki Nishibayashi , Shin-ichi Shikata
发明人： Hiromu Shiomi , Yoshiki Nishibayashi , Shin-ichi Shikata
IPC分类号： B81B3/00 , B81C1/00 , G01C19/56 , G01H3/08 , G01H11/00 , G01H11/06 , G01L9/00 , G01P15/08 , G01P15/125 , G01Q70/14 , G01Q80/00
CPC分类号： G01P15/0802 , B81B3/007 , B81C1/0015 , B81C1/00682 , G01H11/00 , G01H11/06 , G01H3/08 , G01P15/125 , B81B2201/0235 , B81B2201/0264 , B81B2201/034 , B81B2201/035 , B81B2201/054 , B81B2203/0118 , B81B2203/04 , B81C2201/0109 , G01P2015/0828
摘要： A micro mechanical component of the present invention comprises a base, and at least one drive portion supported on the base and relatively driving to the base, in which the drive portion is formed from a diamond layer. Thus, because the drive portion has excellent mechanical strength and modulus of elasticity, the operational performance can be greatly improved as a micro mechanical component processed in a fine shape, from the conventional level. Further, because the drive portion exhibits excellent device characteristics under severe circumstances, the range of applications as a micro mechanical component can be widely expanded from the conventional range.

6. 发明授权

US5663595A Diamond heat sink comprising synthetic diamond film 失效
标题翻译：金刚石散热片包括合成金刚石薄膜
公开(公告)号：US5663595A
公开(公告)日：1997-09-02
申请号：US509569
申请日：1995-07-31
申请人： Hiromu Shiomi , Hideaki Nakahata , Yoshiki Nishibayashi , Shin-ichi Shikata
发明人： Hiromu Shiomi , Hideaki Nakahata , Yoshiki Nishibayashi , Shin-ichi Shikata
IPC分类号： H01L23/373 , H01L23/38 , H01L23/34 , H01L31/0312
CPC分类号： H01L23/38 , H01L23/3732 , H01L2924/0002
摘要： A diamond heat sink of the present invention comprises:a support layer consisting of substantially undoped vapor phase synthetic diamond;a heat sensitive layer consisting of doped vapor phase synthetic diamond formed on the surface of the support layer;an insulation layer consisting of substantially undoped vapor phase synthetic diamond formed on a predetermined region of the heat sensitive layer; andan electrode formed on the heat sensitive layer. The electrode typically consists of a metal, preferably Ti/Mo/Au or Ti/Pt/Au.The diamond heat sink of the present invention may further include a highly-doped layer for creating Ohmic contacts with the metal electrode, which is made of the vapor phase synthetic diamond having high impurity levels, and which is disposed between the metal electrode and the heat sensitive layer.
摘要翻译：本发明的金刚石散热器包括：由基本上未掺杂的气相合成金刚石构成的支撑层; 由在载体层的表面上形成的掺杂气相合成金刚石构成的热敏层; 由形成在热敏层的预定区域上的基本上未掺杂的气相合成金刚石构成的绝缘层; 以及形成在热敏层上的电极。电极通常由金属，优选Ti / Mo / Au或Ti / Pt / Au组成。本发明的金刚石散热器还可以包括高掺杂层，用于与金属电极产生欧姆接触，该金属电极由具有高杂质水平的气相合成金刚石制成，并且设置在金属电极和热敏感层。

7. 发明授权

US5943555A Micro mechanical component and production process thereof 失效
标题翻译：微机械部件及其生产工艺
公开(公告)号：US5943555A
公开(公告)日：1999-08-24
申请号：US954307
申请日：1997-10-17
申请人： Hiromu Shiomi , Yoshiki Nishibayashi , Shin-ichi Shikata
发明人： Hiromu Shiomi , Yoshiki Nishibayashi , Shin-ichi Shikata
IPC分类号： B81B3/00 , B81C1/00 , G01C19/56 , G01H3/08 , G01H11/00 , G01H11/06 , G01L9/00 , G01P15/08 , G01P15/125 , G01Q70/14 , G01Q80/00 , H01L21/00
CPC分类号： G01P15/0802 , B81B3/007 , B81C1/0015 , B81C1/00682 , G01H11/00 , G01H11/06 , G01H3/08 , G01P15/125 , B81B2201/0235 , B81B2201/0264 , B81B2201/034 , B81B2201/035 , B81B2201/054 , B81B2203/0118 , B81B2203/04 , B81C2201/0109 , G01P2015/0828
摘要： A micro mechanical component of the present invention comprises a base, and at least one drive portion supported on the base and relatively driving to the base, in which the drive portion is formed from a diamond layer. Thus, because the drive portion has excellent mechanical strength and modulus of elasticity, the operational performance can be greatly improved as a micro mechanical component processed in a fine shape, from the conventional level. Further, because the drive portion exhibits excellent device characteristics under severe circumstances, the range of applications as a micro mechanical component can be widely expanded from the conventional range.
摘要翻译：本发明的微型机械部件包括基座和至少一个支撑在基座上并相对驱动到基座的驱动部分，驱动部分由金刚石层形成。因此，由于驱动部具有优异的机械强度和弹性模量，因此从以往的水平来看，作为微细的机械零件加工成微细的机械部件，可以大大提高其操作性能。此外，由于驱动部在恶劣的环境下表现出优异的器件特性，所以作为微机械部件的应用范围可以从传统的范围得到广泛的扩展。

8. 发明授权

US5812573A Semiconductor lasers comprising rare earth metal-doped diamond 失效
标题翻译：包含稀土金属掺杂金刚石的半导体激光器
公开(公告)号：US5812573A
公开(公告)日：1998-09-22
申请号：US616552
申请日：1996-03-15
申请人： Hiromu Shiomi , Yoshiki Nishibayashi , Shin-ichi Shikata
发明人： Hiromu Shiomi , Yoshiki Nishibayashi , Shin-ichi Shikata
IPC分类号： H01S3/094 , H01S3/06 , H01S3/16 , H01S3/19
CPC分类号： H01S3/16 , H01S3/1603 , H01S3/1628 , H01S3/163
摘要： In general, the semiconductor laser device of the present invention comprises an emitting element comprising a doped diamond, which is doped with atoms of at least one rare earth metal and/or molecules of at least one compound containing a rare earth metal. The semiconductor laser device assembly according to the present invention comprises an emitting element of a doped diamond, which is a diamond doped with atoms of at least one rare earth metal and/or molecules of at least one compound containing a rare earth metal, and a thermal releasing element of a substantially undoped diamond, on which the semiconductor laser device are placed.
摘要翻译：通常，本发明的半导体激光器件包括掺杂有金刚石的发光元件，该金刚石掺杂有至少一种稀土金属的原子和/或至少一种含有稀土金属的化合物的分子。根据本发明的半导体激光器件组件包括掺杂金刚石的发光元件，掺杂金刚石是掺杂有至少一种稀土金属的原子的金刚石和/或至少一种含有稀土金属的化合物的分子，以及放置半导体激光装置的基本上未掺杂的金刚石的热释放元件。

9. 发明授权

US5976909A Method of forming diamond heat sink comprising synthetic diamond film 失效
标题翻译：形成金刚石散热片的方法，包括合成金刚石膜
公开(公告)号：US5976909A
公开(公告)日：1999-11-02
申请号：US815781
申请日：1997-03-12
申请人： Hiromu Shiomi , Hideaki Nakahata , Yoshiki Nishibayashi , Shin-ichi Shikata
发明人： Hiromu Shiomi , Hideaki Nakahata , Yoshiki Nishibayashi , Shin-ichi Shikata
IPC分类号： H01L23/373 , H01L23/38 , H01L23/367
CPC分类号： H01L23/38 , H01L23/3732 , H01L2924/0002
摘要： A diamond heat sink is disclosed in this invention. The diamond heat sink has a support layer consisting of substantially undoped vapor phase synthetic diamond, a heat sensitive layer consisting of doped vapor phase synthetic diamond formed on the surface of the support layer; an insulation layer consisting of substantially undoped vapor phase synthetic diamond formed on a predetermined region of the heat sensitive layer; and an electrode formed on the heat sensitive layer. The electrode typically consists of a metal, preferably Ti/Mo/Au or Ti/Pt/Au. The diamond heat sink of the present invention may further include a highly-doped layer for creating Ohmic contacts with the metal electrode, which is made of the vapor phase synthetic diamond having high impurity levels, and which is disposed between the metal electrode and the heat sensitive layer.
摘要翻译：本发明公开了一种金刚石散热器。金刚石散热器具有由基本上未掺杂的气相合成金刚石构成的支撑层，由支撑层表面上形成的掺杂气相合成金刚石构成的热敏层; 由形成在热敏层的预定区域上的基本上未掺杂的气相合成金刚石构成的绝缘层; 以及形成在热敏层上的电极。电极通常由金属，优选Ti / Mo / Au或Ti / Pt / Au组成。本发明的金刚石散热器还可以包括高掺杂层，用于与金属电极产生欧姆接触，该金属电极由具有高杂质水平的气相合成金刚石制成，并且设置在金属电极和热敏感层。

10. 发明授权

US5500393A Method for fabricating a schottky junction 失效
标题翻译：制造肖特基结的方法
公开(公告)号：US5500393A
公开(公告)日：1996-03-19
申请号：US184105
申请日：1994-01-21
申请人： Yoshiki Nishibayashi , Hiromu Shiomi , Naoji Fujimori
发明人： Yoshiki Nishibayashi , Hiromu Shiomi , Naoji Fujimori
IPC分类号： H01L21/04 , H01L21/306 , H01L29/16 , H01L29/47 , H01L21/28
CPC分类号： H01L21/02085 , H01L21/0435 , H01L29/1602 , H01L29/47 , Y10S148/017
摘要： The characteristics of a Schottky junction between diamond and metal causes the diode using the Schottky junction to have a large leakage reverse current and n-value far bigger than 1. A surface of diamond on which a Schottky junction shall be formed is pretreated by oxygen plasma or halogen plasma. The oxygen plasma or hydrogen plasma improves the surface state of the diamond by decoupling the surface C--C bonds and endowing the resulting extra bonds with hydrogen atoms, normalizing the superlattice structure at the surface. Pretreatment of the diamond by the oxygen or halogen plasma improves the diode properties; decreasing reverse current, increasing forward current and decreasing the n-value nearer to 1.
摘要翻译：金刚石与金属之间的肖特基结的特征导致使用肖特基结的二极管具有大的漏电反向电流和n值远大于1.将形成肖特基结的金刚石表面用氧等离子体或卤素等离子体。氧等离子体或氢等离子体或氢等离子体通过使表面C-C键解耦并赋予所形成的额外键与氢原子来改善金刚石的表面状态，使表面超晶格结构标准化。通过氧或卤素等离子体预处理金刚石可提高二极管性能; 减小反向电流，增加正向电流，并将n值减小到更接近1。

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