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1. 发明申请

US20130070801A1 SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20130070801A1
公开(公告)日：2013-03-21
申请号：US13675779
申请日：2012-11-13
申请人： Yoshiki MURAYAMA , Shingo Kameyama , Yasuhiko Nomura
发明人： Yoshiki MURAYAMA , Shingo Kameyama , Yasuhiko Nomura
IPC分类号： H01S5/10 , H01L33/44
CPC分类号： H01S5/32341 , H01S5/0202 , H01S5/028 , H01S5/0287 , H01S5/22 , H01S5/3063
摘要： A semiconductor laser device includes a first cavity facet formed on an end of the semiconductor element layer on a light-emitting side of a region including the light emitting layer, a first insulating film, made of AlN, formed on a surface of the first cavity facet and a second insulating film, made of AlOXNY (0≦X
摘要翻译：半导体激光器件包括形成在包括发光层的区域的发光侧的半导体元件层的端部上的第一腔面，形成在第一空腔的表面上的由AlN制成的第一绝缘膜面和由第一绝缘膜相对于第一空腔面的表面上形成的AlOXNY（0＆amp; NlE; X <1.5,0＆amp; NlE; 1）制成的第二绝缘膜。第一绝缘膜和第二绝缘膜之间的第一界面具有第一凹部和第一突出部。

2. 发明申请

US20100111130A1 SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20100111130A1
公开(公告)日：2010-05-06
申请号：US12608549
申请日：2009-10-29
申请人： Yoshiki Murayama , Shingo Kameyama , Yasuhiko Nomura
发明人： Yoshiki Murayama , Shingo Kameyama , Yasuhiko Nomura
IPC分类号： H01S5/00 , H01L21/00 , H01L21/04
CPC分类号： H01S5/32341 , H01S5/0202 , H01S5/028 , H01S5/0287 , H01S5/22 , H01S5/3063
摘要： A semiconductor laser device includes a first cavity facet formed on an end of the semiconductor element layer on a light-emitting side of a region including the light emitting layer, a first insulating film, made of AlN, formed on a surface of the first cavity facet and a second insulating film, made of AlOXNY (0≦X
摘要翻译：半导体激光器件包括形成在包括发光层的区域的发光侧的半导体元件层的端部上的第一腔面，形成在第一空腔的表面上的由AlN制成的第一绝缘膜在第一绝缘膜的与第一腔面相反的一侧的表面上形成由AlOXNY（0＆lt; NlE; X <1.5,0

3. 发明授权

US08077753B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US08077753B2
公开(公告)日：2011-12-13
申请号：US12594098
申请日：2009-02-09
申请人： Shingo Kameyama , Yoshiki Murayama
发明人： Shingo Kameyama , Yoshiki Murayama
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/028 , H01S5/0287 , H01S5/2009 , H01S5/22 , H01S5/3063
摘要： A semiconductor laser device capable of improving the reliability of the laser device is obtained. This semiconductor laser device (1000) includes a semiconductor element layer (20) having a light emitting layer (25), a first cavity facet (1) formed on an end portion on a light emitting side of a region of the semiconductor element layer including the light emitting layer, a first insulating film (40) in which a first nitride film (41), a first intermediate film including a first oxide film (42) and a second nitride film (43) are formed on the first cavity facet in this order from the side of the first cavity facet and a second insulating film (51), formed on the first insulating film, including a second oxide film (51).
摘要翻译：获得能够提高激光装置的可靠性的半导体激光装置。该半导体激光器件（1000）包括具有发光层（25）的半导体元件层（20），形成在半导体元件层的区域的发光侧的端部的第一空腔面（1）发光层，第一绝缘膜（40），其中第一氮化物膜（41），包括第一氧化膜（42）和第二氮化物膜（43）的第一中间膜形成在第一空腔面上从第一腔面的一侧开始并且形成在第一绝缘膜上的包括第二氧化膜的第二绝缘膜（51）。

4. 发明申请

US20100303116A1 SEMICONDUCTOR LASER DEVICE AND OPTICAL APPARATUS EMPLOYING THE SAME 审中-公开
标题翻译：半导体激光器件和使用其的光学器件
公开(公告)号：US20100303116A1
公开(公告)日：2010-12-02
申请号：US12790006
申请日：2010-05-28
申请人： Yoshiki Murayama , Shingo Kameyama
发明人： Yoshiki Murayama , Shingo Kameyama
IPC分类号： H01S5/028
CPC分类号： H01S5/028 , B82Y20/00 , H01S5/02212 , H01S5/0287 , H01S5/2009 , H01S5/2214 , H01S5/305 , H01S5/34333
摘要： This semiconductor laser device includes a semiconductor element layer having an active layer and a cavity facet and a facet coating film arranged on the cavity facet, while the facet coating film includes an oxide film made of hafnium silicate (HfSiO) or hafnium aluminate (HfAlO), and the facet coating film further has a nitrogen-containing film, in contact with the cavity facet, between the cavity facet and the oxide film.
摘要翻译：该半导体激光器件包括具有活性层和空腔面的半导体元件层和设置在空腔面上的小面涂膜，而小面涂膜包括由硅酸铪（HfSiO）或铝酸铪（HfAlO）构成的氧化膜，，并且小面涂膜还具有与腔面相接触的空腔面与氧化膜之间的含氮膜。

5. 发明申请

US20100118908A1 SEMICONDUCTOR LASER DEVICE 有权
标题翻译：半导体激光器件
公开(公告)号：US20100118908A1
公开(公告)日：2010-05-13
申请号：US12594098
申请日：2009-02-09
申请人： Shingo Kameyama , Yoshiki Murayama
发明人： Shingo Kameyama , Yoshiki Murayama
IPC分类号： H01S5/323
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/028 , H01S5/0287 , H01S5/2009 , H01S5/22 , H01S5/3063
摘要： A semiconductor laser device capable of improving the reliability of the laser device is obtained. This semiconductor laser device (1000) includes a semiconductor element layer (20) having a light emitting layer (25), a first cavity facet (1) formed on an end portion on a light emitting side of a region of the semiconductor element layer including the light emitting layer, a first insulating film (40) in which a first nitride film (41), a first intermediate film including a first oxide film (42) and a second nitride film (43) are formed on the first cavity facet in this order from the side of the first cavity facet and a second insulating film (51), formed on the first insulating film, including a second oxide film (51).
摘要翻译：获得能够提高激光装置的可靠性的半导体激光装置。该半导体激光器件（1000）包括具有发光层（25）的半导体元件层（20），形成在半导体元件层的区域的发光侧的端部的第一空腔面（1）发光层，第一绝缘膜（40），其中第一氮化物膜（41），包括第一氧化膜（42）和第二氮化物膜（43）的第一中间膜形成在第一空腔面上从第一腔面的一侧开始并且形成在第一绝缘膜上的包括第二氧化膜的第二绝缘膜（51）。

6. 发明授权

US07907652B2 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US07907652B2
公开(公告)日：2011-03-15
申请号：US12109124
申请日：2008-04-24
申请人： Shingo Kameyama , Yasuhiko Nomura , Masayuki Hata
发明人： Shingo Kameyama , Yasuhiko Nomura , Masayuki Hata
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , H01L2224/45144 , H01L2224/48091 , H01L2224/48465 , H01L2224/73265 , H01S5/0207 , H01S5/02212 , H01S5/02272 , H01S5/02276 , H01S5/0425 , H01S5/1039 , H01S5/3201 , H01S5/32341 , H01S5/4031 , H01L2924/00014 , H01L2924/00
摘要： In this semiconductor laser device, a semiconductor laser element is so fixed to a base that a distance between a convex side of a warp thereof and the base varies with the warp of the semiconductor laser element at least along a first direction corresponding to an extensional direction of a cavity or a second direction, while a wire bonding portion is provided around a portion of an electrode layer corresponding to the vicinity of a region where the distance between the convex side of the warp of the semiconductor laser element in at least either the first direction or the second direction of the semiconductor laser element and the base is substantially the smallest.
摘要翻译：在该半导体激光器件中，将半导体激光元件固定在基底上，使其翘曲的凸面与基底之间的距离至少沿着与拉伸方向对应的第一方向随着半导体激光元件的翘曲而变化在与第一半导体激光元件的翘曲的凸侧面之间的距离对应的区域附近的电极层的一部分附近设置引线接合部，半导体激光元件的方向或第二方向基本上最小。

7. 发明授权

US07978744B2 Nitride based semiconductor laser device with oxynitride protective films on facets 有权
标题翻译：氮化物基半导体激光器件，面上有氮氧化物保护膜
公开(公告)号：US07978744B2
公开(公告)日：2011-07-12
申请号：US12236616
申请日：2008-09-24
申请人： Shingo Kameyama , Yasuhiko Nomura , Ryoji Hiroyama , Masayuki Hata
发明人： Shingo Kameyama , Yasuhiko Nomura , Ryoji Hiroyama , Masayuki Hata
IPC分类号： H01S5/028
CPC分类号： H01S5/32341 , H01S5/028 , H01S5/0282
摘要： One facet of a nitride based semiconductor laser device is composed of a cleavage plane of (0001), and the other facet thereof is composed of a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including nitrogen as a constituent element is formed on the one facet. A second protective film including oxygen as a constituent element is formed on the other facet.
摘要翻译：氮化物基半导体激光器件的一个面由（0001）的解理面构成，另一个面由（000 1）的解理面构成。因此，一个面和另一个面分别是Ga极平面和N极平面。位于光波导中的一个面和另一个面的一部分的一部分构成一对腔面。在一个面上形成包括氮作为构成元素的第一保护膜。在另一方面形成包括氧作为构成元素的第二保护膜。

8. 发明授权

US07924898B2 Nitride based semiconductor laser device with oxynitride protective coatings on facets 失效
标题翻译：基于氮化物的半导体激光器件，具有氧氮化物保护涂层
公开(公告)号：US07924898B2
公开(公告)日：2011-04-12
申请号：US12236627
申请日：2008-09-24
申请人： Shingo Kameyama , Yasuhiko Nomura , Ryoji Hiroyama , Masayuki Hata
发明人： Shingo Kameyama , Yasuhiko Nomura , Ryoji Hiroyama , Masayuki Hata
IPC分类号： H01S5/028
CPC分类号： H01S5/32341 , H01S5/0282 , H01S5/0287 , H01S5/1082 , H01S5/227 , H01S5/3202 , H01S2301/176
摘要： One facet and the other facet of a nitride based semiconductor laser device are respectively composed of a cleavage plane of (0001) and a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including oxygen as a constituent element is formed on the one facet. A second protective film including nitrogen as a constituent element is formed on the other facet.
摘要翻译：氮化物基半导体激光器件的一个面和另一个面分别由（0001）的解理面和（000 1）的解理面构成。因此，一个面和另一个面分别是Ga极平面和N极平面。位于光波导中的一个面和另一个面的一部分的一部分构成一对腔面。在一个面上形成包括氧作为构成元素的第一保护膜。在另一方面形成包括氮作为构成元素的第二保护膜。

9. 发明授权

US07869480B2 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US07869480B2
公开(公告)日：2011-01-11
申请号：US12126365
申请日：2008-05-23
申请人： Shingo Kameyama , Yasuhiko Nomura , Masayuki Hata , Kyoji Inoshita
发明人： Shingo Kameyama , Yasuhiko Nomura , Masayuki Hata , Kyoji Inoshita
IPC分类号： H01S3/04
CPC分类号： H01S5/10 , H01L2224/73265 , H01L2924/01019 , H01S5/0207 , H01S5/02272 , H01S5/02276 , H01S5/3201
摘要： In a semiconductor laser device, a semiconductor laser element is so fixed to a base that a distance between a convex side of a warp of the semiconductor laser element and the base varies with the warp of the semiconductor laser element along a first direction corresponding to an extensional direction of a cavity while a wire bonding portion is provided around a portion of an electrode layer corresponding to the vicinity of a region where the distance is the largest.
摘要翻译：在半导体激光装置中，将半导体激光元件固定在基底上，使得半导体激光元件的翘曲的凸面与基体之间的距离随着半导体激光元件的翘曲沿对应于半导体激光元件的第一方向而变化在与距离最大的区域的附近对应的电极层的一部分周围设置引线接合部的情况下的空腔的延伸方向。

10. 发明申请

US20080317080A1 SEMICONDUCTOR LASER DEVICE 失效
标题翻译：半导体激光器件
公开(公告)号：US20080317080A1
公开(公告)日：2008-12-25
申请号：US12109124
申请日：2008-04-24
申请人： Shingo Kameyama , Yasuhiko Nomura , Masayuki Hata
发明人： Shingo Kameyama , Yasuhiko Nomura , Masayuki Hata
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , H01L2224/45144 , H01L2224/48091 , H01L2224/48465 , H01L2224/73265 , H01S5/0207 , H01S5/02212 , H01S5/02272 , H01S5/02276 , H01S5/0425 , H01S5/1039 , H01S5/3201 , H01S5/32341 , H01S5/4031 , H01L2924/00014 , H01L2924/00
摘要： In this semiconductor laser device, a semiconductor laser element is so fixed to a base that a distance between a convex side of a warp thereof and the base varies with the warp of the semiconductor laser element at least along a first direction corresponding to an extensional direction of a cavity or a second direction, while a wire bonding portion is provided around a portion of an electrode layer corresponding to the vicinity of a region where the distance between the convex side of the warp of the semiconductor laser element in at least either the first direction or the second direction of the semiconductor laser element and the base is substantially the smallest.
摘要翻译：在该半导体激光器件中，将半导体激光元件固定在基底上，使其翘曲的凸面与基底之间的距离至少沿着与拉伸方向对应的第一方向随着半导体激光元件的翘曲而变化在与第一半导体激光元件的翘曲的凸侧面之间的距离对应的区域附近的电极层的一部分附近设置引线接合部，半导体激光元件的方向或第二方向基本上最小。

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