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1. 发明申请

US20130070801A1 SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20130070801A1
公开(公告)日：2013-03-21
申请号：US13675779
申请日：2012-11-13
申请人： Yoshiki MURAYAMA , Shingo Kameyama , Yasuhiko Nomura
发明人： Yoshiki MURAYAMA , Shingo Kameyama , Yasuhiko Nomura
IPC分类号： H01S5/10 , H01L33/44
CPC分类号： H01S5/32341 , H01S5/0202 , H01S5/028 , H01S5/0287 , H01S5/22 , H01S5/3063
摘要： A semiconductor laser device includes a first cavity facet formed on an end of the semiconductor element layer on a light-emitting side of a region including the light emitting layer, a first insulating film, made of AlN, formed on a surface of the first cavity facet and a second insulating film, made of AlOXNY (0≦X
摘要翻译：半导体激光器件包括形成在包括发光层的区域的发光侧的半导体元件层的端部上的第一腔面，形成在第一空腔的表面上的由AlN制成的第一绝缘膜面和由第一绝缘膜相对于第一空腔面的表面上形成的AlOXNY（0＆amp; NlE; X <1.5,0＆amp; NlE; 1）制成的第二绝缘膜。第一绝缘膜和第二绝缘膜之间的第一界面具有第一凹部和第一突出部。

2. 发明申请

US20120093186A1 NITRIDE-BASED SEMICONDUCTOR LASER ELEMENT AND OPTICAL APPARATUS 审中-公开
标题翻译：基于氮化物的半导体激光元件和光学设备
公开(公告)号：US20120093186A1
公开(公告)日：2012-04-19
申请号：US13273617
申请日：2011-10-14
申请人： Yoshiki MURAYAMA
发明人： Yoshiki MURAYAMA
IPC分类号： H01S5/02
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0287 , H01S5/4087
摘要： This nitride-based semiconductor laser element includes a semiconductor element layer made of a nitride-based semiconductor having an emitting-side cavity facet and a reflecting-side cavity facet, and a facet coating film formed on the emitting-side cavity facet. The facet coating film has a first dielectric film made of aluminum nitride formed in contact with the emitting-side cavity facet, a second dielectric film made of aluminum oxynitride formed on a side of the first dielectric film opposite to the emitting-side cavity facet, a third dielectric film made of aluminum oxide formed on a side of the second dielectric film opposite to the first dielectric film, a fourth dielectric film made of aluminum oxynitride formed on a side of the third dielectric film opposite to the second dielectric film, and a fifth dielectric film made of aluminum oxide formed on a side of the fourth dielectric film opposite to the third dielectric film.
摘要翻译：该氮化物系半导体激光元件包括由具有发光侧腔面和反射侧腔面的氮化物系半导体构成的半导体元件层，以及形成在发光侧腔面的小面涂膜。所述小面涂膜具有由与发光侧腔面形成的氮化铝制成的第一电介质膜，在与所述发光侧腔面相对的所述第一电介质膜侧形成的由氧氮化铝构成的第二电介质膜，在与第一电介质膜相反的第二电介质膜一侧形成的由氧化铝制成的第三电介质膜，形成在与第二电介质膜相反的第三电介质膜侧的由氧氮化铝制成的第四电介质膜，形成在与第三电介质膜相反的第四电介质膜的一侧的由氧化铝制成的第五绝缘膜。

3. 发明申请

US20080100148A1 ELECTRET DEVICE AND ELECTROSTATIC OPERATING APPARATUS 有权
标题翻译：电子装置和静电操作装置
公开(公告)号：US20080100148A1
公开(公告)日：2008-05-01
申请号：US11928475
申请日：2007-10-30
申请人： Yoshiki MURAYAMA , Naoteru MATSUBARA
发明人： Yoshiki MURAYAMA , Naoteru MATSUBARA
IPC分类号： G11C13/02
CPC分类号： H01G7/02 , H01G5/0136 , H01G5/16
摘要： An electret device includes an electret film capable of storing charges and a charge outflow inhibition film formed on an upper surface of a region having a high charge density in the electret film and inhibiting the charges stored in the electret film from flowing out
摘要翻译：驻极体装置包括能够存储电荷的驻极体膜和形成在驻极体膜中具有高电荷密度的区域的上表面上的电荷流出抑制膜，并且抑制驻留驻极体膜中存储的电荷流出

4. 发明申请

US20090058224A1 ELECTROSTATIC ACTUATOR AND POWER GENERATOR 有权
标题翻译：静电执行器和发电机
公开(公告)号：US20090058224A1
公开(公告)日：2009-03-05
申请号：US12194123
申请日：2008-08-19
申请人： Yoshiki MURAYAMA , Naoteru MATSUBARA
发明人： Yoshiki MURAYAMA , Naoteru MATSUBARA
IPC分类号： H02N1/00
CPC分类号： H02N1/08 , H02N1/004
摘要： This electrostatic actuator includes an electret film and a conductor layer formed on the electret film, and the conductor layer is so formed as to have a sectional shape reduced in width upward from the side closer to the electret film.
摘要翻译：该静电致动器包括驻极体膜和形成在驻极体膜上的导体层，并且导体层形成为具有从更接近驻极体侧的一侧的宽度向下减小的截面形状。

5. 发明申请

US20080258565A1 ELECTRET DEVICE AND ELECTROSTATIC INDUCTION CONVERSION APPARATUS COMPRISING THE SAME 有权
标题翻译：电极装置和静电感应转换装置包括它们
公开(公告)号：US20080258565A1
公开(公告)日：2008-10-23
申请号：US11864488
申请日：2007-09-28
申请人： Yoshiki MURAYAMA , Naoteru Matsubara , Katsuji Mabuchi
发明人： Yoshiki MURAYAMA , Naoteru Matsubara , Katsuji Mabuchi
IPC分类号： H02N1/00
CPC分类号： H02N1/08
摘要： An electret device includes an electret film into which charges are injected and a barrier film provided on a surface of the electret film and having an electron affinity smaller than the electron affinity of the electret film.
摘要翻译：驻极体装置包括其中注入电荷的驻极体膜和设置在驻极体膜的表面上并具有小于驻极体膜的电子亲和力的电子亲和力的阻挡膜。

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