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    • 4. 发明申请
    • Substrate treatment device
    • 底物处理装置
    • US20110212623A1
    • 2011-09-01
    • US13067117
    • 2011-05-10
    • Takashi YokogawaYasuhiro InokuchiKatsuhiko YamamotoYoshiaki HashibaYasuhiro Ogawa
    • Takashi YokogawaYasuhiro InokuchiKatsuhiko YamamotoYoshiaki HashibaYasuhiro Ogawa
    • H01L21/306H01L21/302
    • C23C16/24C23C16/22C30B25/08C30B25/14C30B29/06C30B35/00
    • It is intended to provide a substrate treatment device capable of adjusting both of a growth speed and an etching speed in a selective epitaxial growth, avoiding particle generation from nozzles, and achieving good etching characteristics. A substrate treatment device for selectively growing an epitaxial film on a surface of a substrate by alternately supplying a raw material gas containing silicon and an etching gas to a treatment chamber, the substrate treatment device being provided with a substrate support member for supporting the substrate in the treatment chamber, a heating member provided outside the treatment chamber for heating the substrate and an atmosphere of the treatment chamber, a gas supply system provided inside the treatment chamber, and a discharge port opened on the treatment chamber, wherein the gas supply system comprises first gas supply nozzles for supplying the raw material gas and second gas supply nozzles for supplying the etching gas.
    • 旨在提供能够在选择性外延生长中调节生长速度和蚀刻速度两者的基板处理装置,从而避免从喷嘴产生颗粒,并获得良好的蚀刻特性。 一种基板处理装置,其通过向处理室交替地供给含有硅和蚀刻气体的原料气体来选择性地在基板的表面上生长外延膜,所述基板处理装置设置有用于将基板支撑于基板的基板支撑部件 所述处理室,设置在所述处理室的外部用于加热所述基板的加热部件和所述处理室的气氛,设置在所述处理室内部的气体供给系统和在所述处理室上开放的排出口,所述气体供给系统包括: 用于供给原料气体的第一气体供给喷嘴和用于供给蚀刻气体的第二气体供给喷嘴。