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1. 发明申请

US20070167003A1 Adhesive film and method for forming metal film using same 审中-公开
标题翻译：粘合膜及使用其形成金属膜的方法
公开(公告)号：US20070167003A1
公开(公告)日：2007-07-19
申请号：US10569940
申请日：2004-08-31
申请人： Yoshihisa Saimoto , Makoto Kataoka , Kouji Igarashi , Shinichi Hayakawa
发明人： Yoshihisa Saimoto , Makoto Kataoka , Kouji Igarashi , Shinichi Hayakawa
IPC分类号： H01L21/44
CPC分类号： H01L21/6835 , C09J7/29 , C09J2400/163 , C09J2423/006 , C09J2431/006 , C09J2467/006 , H01L21/67132 , H01L24/27 , H01L2221/6834 , H01L2224/274 , H01L2924/01019 , H01L2924/01068 , H01L2924/01079 , H01L2924/181 , H01L2924/3025 , H01L2924/00
摘要： The present invention relates to an adhesive film capable of preventing damage to a non-metal-film-formed surface when forming a metal film on a semiconductor wafer and further capable of reducing contamination on the wafer surface. The adhesive film comprises a base film laminated with at least one film layer having a gas transmission rate of not more than 5.0 cc/m2·day·atm with an adhesive layer formed on one surface thereof. By protecting the non-metal-film-formed surface, a washing step using a solvent can be omitted and contamination on the non-metal-film-formed surface can also be reduced, thus resulting in enhancement of productivity and workability.
摘要翻译：本发明涉及一种能够防止在半导体晶片上形成金属膜时对非金属膜形成表面的损害并且还能够减少晶片表面上的污染的粘合膜。粘合膜包括层压有至少一层具有不超过5.0cc / m 2·天的气体透过率的膜层的基膜，在其一个表面上形成粘合剂层。通过保护非金属膜形成的表面，可以省略使用溶剂的洗涤步骤，并且还可以减少非金属膜形成的表面上的污染，从而提高生产率和可加工性。

2. 发明授权

US07238421B2 Pressure sensitive adhesive film for protection of semiconductor wafer surface and method of protecting semiconductor wafer with the pressure sensitive adhesive film 有权
标题翻译：用于保护半导体晶片表面的压敏粘合剂膜和用压敏粘合剂膜保护半导体晶片的方法
公开(公告)号：US07238421B2
公开(公告)日：2007-07-03
申请号：US10506806
申请日：2003-03-26
申请人： Yoshihisa Saimoto , Makoto Kataoka , Masafumi Miyakawa , Shinichi Hayakawa , Kouji Igarashi
发明人： Yoshihisa Saimoto , Makoto Kataoka , Masafumi Miyakawa , Shinichi Hayakawa , Kouji Igarashi
IPC分类号： B32B15/04 , H01L21/30 , H01L21/46 , H01L23/58
CPC分类号： H01L21/67132 , C09J7/22 , C09J7/38 , C09J2201/128 , C09J2203/326 , H01L21/6836 , H01L2221/68327 , H01L2221/6834 , Y10T428/2848
摘要： The present invention relates to a surface protecting adhesive film for a semiconductor wafer in which an adhesive layer having a storage elastic modulus from 1×105 Pa to 1×107 Pa at 150° C. and a thickness of from 3 μm to 100 μm is formed on both a surface and back surface of a base film having a melting point of at least 200° C. and a thickness of 10 μm to 200 μm. According to the present invention, in a step of grinding the back side of a semiconductor wafer and removing a damaged layer generated on the back side, the semiconductor wafer can be prevented from being broken and being contaminated and the like even if a semiconductor wafer is thinned as low as 100 μm.
摘要翻译：本发明涉及一种用于半导体晶片的表面保护粘合剂膜，其中在150℃下具有1×10 5 Pa至1×10 7 Pa的储能弹性模量的粘合剂层在熔点至少为200℃，厚度为10〜200μm的基膜的表面和背面上形成3μm〜100μm的厚度。根据本发明，在研磨半导体晶片的背面并去除在背面产生的损伤层的步骤中，即使半导体晶片是在半导体晶片是变薄至100毫米。

3. 发明申请

US20050161774A1 Pressure sensitive adhesive film for protection of semiconductor wafer surface and method of protecting semiconductor wafer with the pressure sensitive adhesive film 有权
标题翻译：用于保护半导体晶片表面的压敏粘合剂膜和用压敏粘合剂膜保护半导体晶片的方法
公开(公告)号：US20050161774A1
公开(公告)日：2005-07-28
申请号：US10506806
申请日：2003-03-26
申请人： Yoshihisa Saimoto , Makoto Kataoka , Masafumi Miyakawa , Shinichi Hayakawa , Kouji Igarashi
发明人： Yoshihisa Saimoto , Makoto Kataoka , Masafumi Miyakawa , Shinichi Hayakawa , Kouji Igarashi
IPC分类号： C09J7/02 , H01L21/00 , H01L23/58
CPC分类号： H01L21/67132 , C09J7/22 , C09J7/38 , C09J2201/128 , C09J2203/326 , H01L21/6836 , H01L2221/68327 , H01L2221/6834 , Y10T428/2848
摘要： The present invention relates to a surface protecting adhesive film for a semiconductor wafer in which an adhesive layer having a storage elastic modulus from 1×105 Pa to 1×107 Pa at 150° C, and a thickness of from 3 μm to 100 μm is formed on both a surface and back surface of a base film having a melting point of at least 200° C. and a thickness of 10 μm to 200 μm. According to the present invention, in a step of grinding the back side of a semiconductor wafer and removing a damaged layer generated on the back side, the semiconductor wafer can be prevented from being broken and being contaminated and the like even if a semiconductor wafer is thinned as low as 100 μm.
摘要翻译：本发明涉及一种用于半导体晶片的表面保护粘合剂膜，其中在150℃下具有1×10 5 Pa至1×10 7 Pa的储能弹性模量的粘合剂层在熔点至少为200℃，厚度为10〜200μm的基膜的表面和背面上形成3μm〜100μm的厚度。根据本发明，在研磨半导体晶片的背面并去除在背面产生的损伤层的步骤中，即使半导体晶片是在半导体晶片是变薄至100毫米。

4. 发明授权

US07201969B2 Pressure-sensitive adhesive film for the surface protection of semiconductor wafers and method for protection of semiconductor wafers with the film 有权
标题翻译：用于半导体晶片的表面保护的压敏粘合剂膜以及用该膜保护半导体晶片的方法
公开(公告)号：US07201969B2
公开(公告)日：2007-04-10
申请号：US10507245
申请日：2003-03-26
申请人： Masafumi Miyakawa , Makoto Kataoka , Jun Nakashima , Yoshihisa Saimoto , Shinichi Hayakawa , Yasuhisa Fujii
发明人： Masafumi Miyakawa , Makoto Kataoka , Jun Nakashima , Yoshihisa Saimoto , Shinichi Hayakawa , Yasuhisa Fujii
IPC分类号： B32B27/30
CPC分类号： H01L21/6836 , C09J7/22 , C09J7/38 , C09J2203/326 , H01L2221/68327 , Y10T428/31935
摘要： A surface protecting adhesive film for a semiconductor wafer in which an adhesive layer is formed on one surface of a base film, wherein the adhesive layer comprises 100 weight parts of a polymer (A) having a functional group capable of reacting with a cross-linking agent and a temperature in a range of from −50° C. to 5° C. at which tan δ of a dynamic viscoelasticity is maximized, from 10 weight parts to 100 weight parts of a polymer (B) having a functional group capable of reacting with a cross-linking agent and a temperature in a range of from more than 5° C. to 50° C. at which tan δ of a dynamic viscoelasticity is maximized, and from 0.1 weight part to 10 weight parts of a cross-linking agent (C) having more than 2 cross-linking reactive functional groups in a molecule based on 100 weight parts of total amount of the polymers (A) and (B), and the surface protecting adhesive film for a semiconductor wafer which the thickness of the adhesive layer is from 5 μm to 50 μm has an excellent adhesion, prevention of breakage and contamination resistance.
摘要翻译：一种用于半导体晶片的表面保护粘合剂膜，其中在基膜的一个表面上形成粘合剂层，其中粘合剂层包含100重量份具有能够与交联反应的官能团的聚合物（A）并且在-50℃至5℃的范围内的温度，其中动态粘弹性的tanδ最大化，10重量份至100重量份具有能够具有以下官能团的官能团的聚合物（B）与交联剂反应，并且在大于5℃至50℃的范围内的温度，动态粘弹性的tanδ最大化，0.1重量份至10重量份的交联剂，基于100重量份聚合物（A）和（B）的总量，在分子中具有多于2个交联反应性官能团的交联剂（C）和半导体晶片的表面保护粘合剂膜，其厚度的粘合剂层为5〜50μm 具有优异的附着力，防止破损和抗污染。

5. 发明申请

US20050244631A1 Surface protecting film for semiconductor wafer and method of protecting semiconductor wafer using the same 审中-公开
标题翻译：用于半导体晶片的表面保护膜和使用其保护半导体晶片的方法
公开(公告)号：US20050244631A1
公开(公告)日：2005-11-03
申请号：US11111721
申请日：2005-04-22
申请人： Kosuke Sugimoto , Yoshihisa Saimoto , Makoto Kataoka , Masafumi Miyakawa , Shinichi Hayakawa
发明人： Kosuke Sugimoto , Yoshihisa Saimoto , Makoto Kataoka , Masafumi Miyakawa , Shinichi Hayakawa
IPC分类号： H01L21/683 , B32B7/12 , H01L21/00 , H01L21/301 , H01L21/304 , H01L21/68
CPC分类号： H01L21/6836 , H01L2221/68327 , Y10T428/28 , Y10T428/2809
摘要： The present invention is to provide a surface protecting film for a semiconductor wafer which can prevent breakage of the semiconductor wafer even when the semiconductor wafer is thinned to not more than 200 μm, and a method of protecting the semiconductor wafer using the protecting film. The present invention relates to a surface protecting adhesive film for a semiconductor wafer comprising a base film having an adhesive layer formed on one surface thereof, wherein the base film comprises a layer (A) having a storage elastic modulus of from 1×107 Pa to 1×109 Pa at a temperature range of from 20° C. to 180° C.
摘要翻译：本发明提供一种用于半导体晶片的表面保护膜，即使半导体晶片减薄到不超过200μm也能够防止半导体晶片的断裂，以及使用保护膜保护半导体晶片的方法。本发明涉及一种用于半导体晶片的表面保护性粘合膜，其包括在其一个表面上形成有粘合剂层的基膜，其中所述基膜包括具有1×10 7的储能弹性模量的层（A）在20℃至180℃的温度范围内，Pa至1×10 9 Pa。

6. 发明授权

US06879026B2 Surface protecting adhesive film for semiconductor wafer and processing method for semiconductor wafer using said adhesive film 有权
标题翻译：用于半导体晶片的表面保护粘合剂膜和使用所述粘合膜的半导体晶片的处理方法
公开(公告)号：US06879026B2
公开(公告)日：2005-04-12
申请号：US10339344
申请日：2003-01-10
申请人： Hideki Fukumoto , Takanobu Koshimizu , Makoto Kataoka , Yoshihisa Saimoto
发明人： Hideki Fukumoto , Takanobu Koshimizu , Makoto Kataoka , Yoshihisa Saimoto
IPC分类号： C09J7/02 , H01L21/68 , H01L23/58
CPC分类号： H01L21/6836 , C09J7/22 , C09J2203/326 , H01L2221/68327
摘要： An adhesive film for protecting the surface of a semiconductor wafer wherein the adhesive layer is formed on one surface of a substrate film, the substrate film comprising at least one layer which satisfies the following requisites (A) and at least one of (B) or (C): requisite (A): high elastic modulus properties in which the storage modulus is 1×109 Pa to 1×1010 Pa under the total temperature range of from 18 to 50° C. requisite (B): high elastic modulus properties in which the storage modulus within at least part of the temperature range of from 50 to 90° C. is not more than 1×108 Pa. requisite (C): high elastic modulus properties with expansibility by water absorption in which the size-changing ratio by absorbing water for four hours is 0.05 to 0.5% at 23° C. and 90% RH.
摘要翻译：一种用于保护半导体晶片的表面的粘合膜，其中所述粘合剂层形成在基底膜的一个表面上，所述基底膜包括满足以下条件（A）的至少一个层和（B）或（C）：必要条件（A）：在18〜50℃的总温度范围内，储能模量为1×10 9 Pa〜1×10 10 Pa的高弹性模量特性（B）：高弹性其中在50至90℃的至少部分温度范围内的储能模量不超过1×10 8 P的要求（C）：具有通过吸水扩展性的高弹性模量性质，其中通过吸水4小时的尺寸变化率在23℃和90％RH下为0.05〜0.5％。

7. 发明授权

US08476740B2 Sheet for protecting surface of semiconductor wafer, semiconductor device manufacturing method and semiconductor wafer protection method using sheet 有权
标题翻译：用于保护半导体晶片表面的片，半导体器件制造方法和使用片的半导体晶片保护方法
公开(公告)号：US08476740B2
公开(公告)日：2013-07-02
申请号：US13520110
申请日：2011-05-31
申请人： Eiji Hayashishita , Yoshihisa Saimoto , Makoto Kataoka , Katsutoshi Ozaki , Mitsuru Sakai
发明人： Eiji Hayashishita , Yoshihisa Saimoto , Makoto Kataoka , Katsutoshi Ozaki , Mitsuru Sakai
IPC分类号： H01L23/58 , H01L21/30 , H01L21/46 , H01L21/00 , B32B9/00 , B32B33/00
CPC分类号： H01L21/67132 , Y10T428/1471
摘要： To provide a semiconductor wafer surface protection sheet having good adhesion to irregularities on a patterned surface of a semiconductor wafer and having good peelability after wafer grinding. Specifically, a semiconductor wafer surface protection sheet is provided that includes a base layer having a tensile elasticity at 25° C., E(25), of 1 GPa or more; a resin layer A that satisfies the condition EA(60)/EA(25)
摘要翻译：提供对半导体晶片的图案化表面上的凹凸具有良好粘附性并且在晶片研磨之后具有良好剥离性的半导体晶片表面保护片。具体地说，提供一种半导体晶片表面保护片，其包括在25℃，E（25），1GPa以上的拉伸弹性的基层; 满足条件EA（60）/ EA（25）<0.1的树脂层A，其中EA（25）为25℃时的拉伸弹性，EA（60）为60℃时的拉伸弹性， EA（60）为0.005MPa〜1MPa; 和EB（60）大于EA（60）的树脂层B，EB（60）为1MPa以上，厚度为0.1μm以上且小于100μm的EB（60））树脂层A.

8. 发明申请

US20050164509A1 Method of protecting semiconductor wafer and adhesive film for protection of semiconductor wafer 有权
标题翻译：保护半导体晶片和保护半导体晶片的粘合膜的方法
公开(公告)号：US20050164509A1
公开(公告)日：2005-07-28
申请号：US11051625
申请日：2005-01-27
申请人： Takanobu Koshimizu , Makoto Kataoka , Masafumi Miyakawa , Hideki Fukumoto , Yoshihisa Saimoto
发明人： Takanobu Koshimizu , Makoto Kataoka , Masafumi Miyakawa , Hideki Fukumoto , Yoshihisa Saimoto
IPC分类号： H01L21/304 , C09J7/02 , G06K19/077 , H01L21/00 , H01L21/30 , H01L21/302 , H01L21/44 , H01L21/50 , H01L21/68
CPC分类号： H01L21/6835 , H01L21/6836 , H01L2221/68327 , H01L2221/6834
摘要： The present invention is to provide a protecting method for a semiconductor wafer and an adhesive film for protection of a semiconductor wafer which makes it possible to straighten or avoid warpage in a semiconductor wafer and to prevent breakage of wafers during conveyance of wafers even if the thickness of a semiconductor wafer is thinned to approximately 150 μm or less. The present invention provides a protecting method for a semiconductor wafer in a step of processing a semiconductor wafer comprising a first step of adhering an adhesive film for protection of a semiconductor wafer in which an adhesive layer is formed on one surface of a base film to a circuit-formed surface of the semiconductor wafer, a second step of heating the semiconductor wafer to which the adhesive film for protection of the semiconductor wafer is adhered, a third step of processing a non-circuit-formed surface of the semiconductor wafer by fixing the semiconductor wafer to which the adhesive film for protection of the semiconductor wafer is adhered on a grinding machine or an abrasive machine, and a fourth step of peeling the adhesive film for protection of the semiconductor wafer from the semiconductor wafer.
摘要翻译：本发明提供一种用于半导体晶片的保护方法和用于保护半导体晶片的粘合膜，其使得能够矫正或避免半导体晶片中的翘曲并且防止在晶片传送期间晶片的破裂，即使厚度的半导体晶片减薄到大约150μm或更小。本发明提供了在半导体晶片的加工步骤中的半导体晶片的保护方法，该方法包括：第一步骤，将用于保护形成在基膜的一个表面上的粘合剂层的半导体晶片的粘合剂膜粘附到半导体晶片的电路形成表面的第二步骤，加热半导体晶片的第二步骤，用于保护半导体晶片的粘合膜粘附到该半导体晶片上;第三步骤，通过固定半导体晶片的非电路形成表面将用于保护半导体晶片的粘合膜的半导体晶片粘附在研磨机或研磨机上，以及第四步骤，从半导体晶片剥离用于保护半导体晶片的粘合剂膜。

9. 发明申请

US20120273975A1 SHEET FOR PROTECTING SURFACE OF SEMICONDUCTOR WAFER, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR WAFER PROTECTION METHOD USING SHEET 有权
标题翻译：用于保护半导体表面的薄片，半导体器件制造方法和半导体波形保护方法
公开(公告)号：US20120273975A1
公开(公告)日：2012-11-01
申请号：US13520110
申请日：2011-05-31
申请人： Eiji Hayashishita , Yoshihisa Saimoto , Makoto Kataoka , Katsutoshi Ozaki , Mitsuru Sakai
发明人： Eiji Hayashishita , Yoshihisa Saimoto , Makoto Kataoka , Katsutoshi Ozaki , Mitsuru Sakai
IPC分类号： H01L23/29 , H01L21/56
CPC分类号： H01L21/67132 , Y10T428/1471
摘要： To provide a semiconductor wafer surface protection sheet having good adhesion to irregularities on a patterned surface of a semiconductor wafer and having good peelability after wafer grinding. Specifically, a semiconductor wafer surface protection sheet is provided that includes a base layer having a tensile elasticity at 25 C°, E(25), of 1 GPa or more; a resin layer A that satisfies the condition EA(60)/EA(25)
摘要翻译：提供对半导体晶片的图案化表面上的凹凸具有良好粘附性并且在晶片研磨之后具有良好剥离性的半导体晶片表面保护片。具体地说，提供一种半导体晶片表面保护片，其包括在25℃，E（25），1GPa以上的拉伸弹性的基底层; 满足条件EA（60）/ EA（25）<0.1的树脂层A，其中EA（25）为2℃时的拉伸弹性，EA（60）为60℃时的拉伸弹性，EA （60）为0.005MPa〜1MPa; 和EB（60）大于EA（60）的EB（60）为1MPa以上，厚度为0.1μm以上且低于100μm的树脂层B，）树脂层A.

10. 发明授权

US07501312B2 Method of protecting semiconductor wafer and adhesive film for protection of semiconductor wafer 有权
标题翻译：保护半导体晶片和保护半导体晶片的粘合膜的方法
公开(公告)号：US07501312B2
公开(公告)日：2009-03-10
申请号：US11051625
申请日：2005-01-27
申请人： Takanobu Koshimizu , Makoto Kataoka , Masafumi Miyakawa , Hideki Fukumoto , Yoshihisa Saimoto
发明人： Takanobu Koshimizu , Makoto Kataoka , Masafumi Miyakawa , Hideki Fukumoto , Yoshihisa Saimoto
IPC分类号： H01L21/00 , H01L21/302 , H01L21/461
CPC分类号： H01L21/6835 , H01L21/6836 , H01L2221/68327 , H01L2221/6834
摘要： A protecting method for a semiconductor wafer in a step of processing a semiconductor wafer which involves a first step of adhering an adhesive film for protection of a semiconductor wafer in which an adhesive layer is formed on one surface of a base film to a circuit-formed surface of the semiconductor wafer, a second step of heating the semiconductor wafer to which the adhesive film for protection of the semiconductor wafer is adhered, a third step of processing a non-circuit-formed surface of the semiconductor wafer by fixing the semiconductor wafer to which the adhesive film for protection of the semiconductor wafer is adhered on a grinding machine or an abrasive machine, and a fourth step of peeling the adhesive film for protection of the semiconductor wafer from the semiconductor wafer. The method addresses warpage problems and can prevent breakage of wafers during conveyance even if the thickness of a wafer is reduced to approximately 150 μm or less.
摘要翻译：一种处理半导体晶片的步骤中的半导体晶片的保护方法，其包括将用于保护形成有粘合剂层的半导体晶片的粘合膜粘附到基膜的一个表面上的第一步骤到电路形成第二步骤，加热半导体晶片，其上粘附用于保护半导体晶片的粘合膜;第三步骤，通过将半导体晶片固定到半导体晶片的非电路形成表面上其中用于保护半导体晶片的粘合膜粘附在研磨机或研磨机上，以及第四步骤，从半导体晶片剥离用于保护半导体晶片的粘合剂膜。该方法解决了翘曲问题，并且即使将晶片的厚度减小到约150μm或更小，也可防止晶片在输送期间的破损。

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