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1. 发明授权

US06459107B2 Photodetector having a mixed crystal layer of SiGeC 有权
标题翻译：具有SiGeC的混晶层的光电检测器
公开(公告)号：US06459107B2
公开(公告)日：2002-10-01
申请号：US09793696
申请日：2001-02-27
申请人： Yoshihiro Sugiyama , Yoshiki Sakuma
发明人： Yoshihiro Sugiyama , Yoshiki Sakuma
IPC分类号： H01L148
CPC分类号： H01L31/0312 , H01L31/02005 , H01L31/03125 , H01L31/1075
摘要： A photodetector includes a substrate and an optical absorption layer provided on the substrate, wherein the optical absorption layer is formed of a mixed crystal of Si, Ge and C.
摘要翻译：光电检测器包括基板和设置在基板上的光吸收层，其中光吸收层由Si，Ge和C的混合晶体形成。

2. 发明授权

US06235547B1 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06235547B1
公开(公告)日：2001-05-22
申请号：US09366564
申请日：1999-08-04
申请人： Yoshiki Sakuma , Yoshihiro Sugiyama , Shunichi Muto
发明人： Yoshiki Sakuma , Yoshihiro Sugiyama , Shunichi Muto
IPC分类号： H01L2100
CPC分类号： B82Y10/00 , H01L21/02381 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L21/02642 , H01L21/30612 , H01L29/045 , H01L29/125 , H01L29/127 , H01S5/227
摘要： In a semiconductor device, concave sections in which an opening area becomes small in proportion as a depth becomes deep are formed in a crystal layer, and a quantum structure is formed on at least one crystal face of a bottom section of the concave section and a border formed between plural sidewalls thereof. In case the quantum structure is formed in the bottom section, a quantum box is formed therein. If the quantum structure is formed in the border between the sidewalls of the concave section, a quantum wire is formed therein. In case the quantum structure is formed in the sidewall of the concave section, a two-dimensional quantum well is formed therein.
摘要翻译：在半导体器件中，在晶体层中形成开口面积变深的比例变小的凹部，在凹部的底部的至少一个晶面上形成量子结构，边界在其多个侧壁之间形成。在底部形成量子结构的情况下，在其中形成量子箱。如果量子结构形成在凹部的侧壁之间的边界上，则在其中形成量子线。在量子结构形成在凹部的侧壁的情况下，形成二维量子阱。

3. 发明授权

US6011271A Semiconductor device and method of fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US6011271A
公开(公告)日：2000-01-04
申请号：US678549
申请日：1996-07-09
申请人： Yoshiki Sakuma , Yoshihiro Sugiyama , Shunichi Muto
发明人： Yoshiki Sakuma , Yoshihiro Sugiyama , Shunichi Muto
IPC分类号： H01L21/20 , H01L21/306 , H01L29/04 , H01L29/12 , H01S5/227 , H01L29/06
CPC分类号： B82Y10/00 , H01L21/02381 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L21/02642 , H01L21/30612 , H01L29/045 , H01L29/125 , H01L29/127 , H01S5/227
摘要： In a semiconductor device, concave sections in which an opening area becomes small in proportion as a depth becomes deep are formed in a crystal layer, and a quantum structure is formed on at least one crystal face of a bottom section of the concave section and a border formed between plural sidewalls thereof. In case the quantum structure is formed in the bottom section, a quantum box is formed therein. If the quantum structure is formed in the border between the sidewalls of the concave section, a quantum wire is formed therein. In case the quantum structure is formed in the sidewall of the concave section, a two-dimensional quantum well is formed therein.
摘要翻译：在半导体器件中，在晶体层中形成开口面积变深的比例变小的凹部，在凹部的底部的至少一个晶面上形成量子结构，边界在其多个侧壁之间形成。在底部形成量子结构的情况下，在其中形成量子箱。如果量子结构形成在凹部的侧壁之间的边界上，则在其中形成量子线。在量子结构形成在凹部的侧壁的情况下，形成二维量子阱。

4. 发明申请

US20050037574A1 Semiconductor memory device and manufacturing method thereof 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20050037574A1
公开(公告)日：2005-02-17
申请号：US10950456
申请日：2004-09-28
申请人： Yoshihiro Sugiyama
发明人： Yoshihiro Sugiyama
IPC分类号： H01L21/8247 , H01L21/28 , H01L27/115 , H01L29/51 , H01L29/788 , H01L29/792 , H01L21/8238 , H01L21/336
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28282 , H01L27/115 , H01L29/511 , H01L29/513 , H01L29/515 , H01L29/517 , H01L29/518 , H01L29/792
摘要： A semiconductor memory device which more reliably retains electrons trapped in its charge-trapping regions. A high-dielectric gate insulating film is grown on a semiconductor substrate. This gate insulating film is composed of first and second oxides, where the second oxide has a smaller bandgap than that of the first oxide and is scattered in dot-like form, surrounded by the first oxide. The memory cell is programmed by injecting electrons into a local potential minimum that is produced due to the bandgap difference between the phase-separated first and second oxides.
摘要翻译：一种半导体存储器件，其更可靠地保留俘获在其电荷俘获区域中的电子。在半导体衬底上生长高电介质栅极绝缘膜。该栅极绝缘膜由第一氧化物和第二氧化物构成，其中第二氧化物的带隙比第一氧化物的带隙小，并且以点状形式散射，被第一氧化物包围。通过将电子注入由于相分离的第一和第二氧化物之间的带隙差而产生的局部电位最小值来编程存储器单元。

5. 发明授权

US06780699B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06780699B2
公开(公告)日：2004-08-24
申请号：US10359250
申请日：2003-02-06
申请人： Yasuyuki Tamura , Yusuke Morisaki , Yoshihiro Sugita , Kiyoshi Irino , Takayuki Aoyama , Chikako Yoshida , Yoshihiro Sugiyama , Hitoshi Tanaka , Kanetake Takasaki
发明人： Yasuyuki Tamura , Yusuke Morisaki , Yoshihiro Sugita , Kiyoshi Irino , Takayuki Aoyama , Chikako Yoshida , Yoshihiro Sugiyama , Hitoshi Tanaka , Kanetake Takasaki
IPC分类号： H01L218238
CPC分类号： H01L21/823462 , C23C16/401 , H01L21/28194 , H01L21/28202 , H01L21/3144 , H01L21/31604 , H01L21/31612 , H01L28/56 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A semiconductor device in which the insulation characteristics of an insulating film of multilayer structure including a lower-layer insulating film and a high-dielectric-constant film formed on the lower-layer insulating film are ensured, and a method for fabricating such a semiconductor device. A silicon oxide film or a silicon oxynitride film is formed on a semiconductor substrate as a lower-layer insulating film and part of the lower-layer insulating film is removed. Then a high-dielectric-constant film the dielectric constant of which is higher than that of the lower-layer insulating film is formed on the exposed semiconductor substrate and the lower-layer insulating film. If the lower-layer insulating film is a silicon oxide film, then a metallic compound not including chlorine is used for forming this high-dielectric-constant film. If the lower-layer insulating film is a silicon oxynitride film, then a metallic chloride can be used for forming this high-dielectric-constant film.
摘要翻译：一种半导体器件，其中确保了在下层绝缘膜上形成的包括下层绝缘膜和高介电常数膜的多层结构的绝缘膜的绝缘特性，以及制造这种半导体器件的方法。在作为下层绝缘膜的半导体基板上形成氧化硅膜或氧氮化硅膜，除去下层绝缘膜的一部分。然后在暴露的半导体衬底和下层绝缘膜上形成其介电常数高于下层绝缘膜的介电常数的高介电常数膜。如果下层绝缘膜是氧化硅膜，则使用不含氯的金属化合物来形成该高介电常数膜。如果下层绝缘膜是氮氧化硅膜，则可以使用金属氯化物来形成该高介电常数膜。

6. 发明授权

US06183926B2 Toner and two-component developer for electrophotographic process and image formation method and image formation apparatus using the toner 有权
标题翻译：用于电子照相处理和图像形成方法的调色剂和双组分显影剂和使用调色剂的成像装置
公开(公告)号：US06183926B2
公开(公告)日：2001-02-06
申请号：US09425985
申请日：1999-10-25
申请人： Noboru Kuroda , Yasushi Nakamura , Ryoichi Ito , Yasuaki Iwamoto , Kohki Katoh , Tomio Kondou , Kenichi Uehara , Yoshihiro Sugiyama , Yasuyuki Sanui
发明人： Noboru Kuroda , Yasushi Nakamura , Ryoichi Ito , Yasuaki Iwamoto , Kohki Katoh , Tomio Kondou , Kenichi Uehara , Yoshihiro Sugiyama , Yasuyuki Sanui
IPC分类号： G03G9083
CPC分类号： G03G9/0819
摘要： A toner is made or toner particles which contains a binder resin and a coloring agent, wherein the toner particles have a weight-average particle size in a range of 6.0 to 11.5 &mgr;m, and contains toner particles (a) with a particle diameter of 5 &mgr;m or less in a content ratio of 1 to 15% by number, and toner particles (b) with a particle diameter of twice or more the weight-average particle size in a content ratio of 5 wt % or less, and the number-average particle size D25 and the number-average particle size D75 respectively obtained when the cumulative number of the toner particles reaches 25% and 75% at the measurement of a cumulative toner particle distribution by number thereof are in the relationship of 0.60≦D25/D75≦0.95. A two-component developer includes the above-mentioned toner and a carrier.
摘要翻译：制造调色剂或含有粘合剂树脂和着色剂的调色剂颗粒，其中调色剂颗粒的重均粒径在6.0至11.5μm的范围内，并且包含粒径为5的调色剂颗粒（a）以及含量比例为1〜15％的调色剂颗粒（b），以及重均粒径的2倍以上的调色剂颗粒（b）的含量比例为5重量％以下，当累计调色剂颗粒分布的数量在调色剂颗粒的累积数达到25％和75％时分别获得的平均粒径D25和数均粒径D75的关系为0.60 <= D25 / D75 <= 0.95。双组分显影剂包括上述调色剂和载体。

7. 发明授权

US06949805B2 Semiconductor device having low interface state density and method for fabricating the same 失效
标题翻译：具有低界面态密度的半导体器件及其制造方法
公开(公告)号：US06949805B2
公开(公告)日：2005-09-27
申请号：US10614227
申请日：2003-07-08
申请人： Yoshiaki Tanida , Yoshihiro Sugiyama
发明人： Yoshiaki Tanida , Yoshihiro Sugiyama
IPC分类号： H01L29/861 , H01L21/28 , H01L29/51 , H01L29/78 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L21/28194 , H01L29/513 , H01L29/517 , H01L29/518
摘要： The semiconductor device comprises an intermediate layer formed on a semiconductor substrate 6, the intermediate layer 12 being formed of an oxide containing a first element which is either of a III group element and a V group element, an insulation film formed on the intermediate layer, the insulation film being formed of an oxide of a second element which is the other of the III group element and the V group element, and an electrode 16 formed on the insulation film. Because the intermediate layer of the oxide containing the first element is formed, even when the gate insulation film is formed of Al2O3 or others, the interface state density can be depressed to be low. Thus, the semiconductor device can have low interface state density and small flat band voltage shift even when Al2O3, etc. is used as a material of the insulation film.
摘要翻译：半导体器件包括形成在半导体衬底6上的中间层，中间层12由含有III族元素和V族元素中的任一种的第一元素的氧化物形成，在中间层上形成的绝缘膜，绝缘膜由作为III族元素和V族元素中的另一个的第二元素的氧化物形成，以及形成在绝缘膜上的电极16。由于形成含有第一元素的氧化物的中间层，所以即使当栅极绝缘膜由Al 2 O 3 3等形成时，界面态密度也可以是郁闷低。因此，即使当使用Al 2 O 3 3等作为绝缘膜的材料时，半导体器件也可以具有低的界面态密度和小的平带电压偏移。

8. 发明申请

US20050000720A1 Bus bar device and electric junction box incorporating the same 失效
标题翻译：母线设备和电接线盒结合在一起
公开(公告)号：US20050000720A1
公开(公告)日：2005-01-06
申请号：US10876009
申请日：2004-06-25
申请人： Masatoshi Egawa , Tomohiro Sugiura , Yoshihiro Sugiyama , Yumi Sekine , Minoru Umezaki
发明人： Masatoshi Egawa , Tomohiro Sugiura , Yoshihiro Sugiyama , Yumi Sekine , Minoru Umezaki
IPC分类号： H01R4/24 , H01R9/22 , H02G3/16 , H02G5/00
CPC分类号： H01R9/226 , H01R4/242 , Y10S439/949
摘要： A conductive bus bar includes a first plate-shaped portion extending in a first direction and a second plate-shaped portion continued from the first portion and extending in a second direction perpendicular to the first direction. The second plate-shaped portion has a first main face which faces the first plate-shaped portion, a second main face opposite to the first main face, and side faces connecting the first main face and the second main face. A press-contact portion is formed in the second plate-shaped portion, to which an electric wire is press-fitted. An insulative mount includes a mount face, on which the first plate-shaped portion is disposed, and a wall member extending in the second direction to support the second main face of the second plate-shaped portion. A pair of rib members are extended from the wall member to support the side faces of the second plate-shaped portion.
摘要翻译：导电汇流条包括沿第一方向延伸的第一板形部分和从第一部分延续并沿垂直于第一方向的第二方向延伸的第二板状部分。第二板状部具有与第一板状部相对的第一主面，与第一主面相反的第二主面以及连接第一主面和第二主面的侧面。在第二板状部分中形成压接部分，电线被压入该压接部分。绝缘座包括安装面，其上设置有第一板状部分，壁构件沿第二方向延伸以支撑第二板状部分的第二主面。一对肋构件从壁构件延伸以支撑第二板状部分的侧面。

9. 发明授权

US5392307A Vertical optoelectronic semiconductor device 失效
标题翻译：垂直光电半导体器件
公开(公告)号：US5392307A
公开(公告)日：1995-02-21
申请号：US113829
申请日：1993-08-31
申请人： Yoshihiro Sugiyama , Yoshiaki Nakata
发明人： Yoshihiro Sugiyama , Yoshiaki Nakata
IPC分类号： H01S5/00 , H01S5/18 , H01S5/183 , H01S3/19
CPC分类号： H01S5/18361 , H01S5/3054 , H01S5/3211
摘要： An active layer having a predetermined effective band gap, a predetermined effective refractive index, and a predetermined thickness is sandwiched between a first clad layer and a second clad layer. Each of the clad layers has an effective band gap wider than that of the active layer, an effective refractive index lower than that of the active layer, and a predetermined thickness. On the first clad layer, there is disposed a first stack structure doped to a first conductivity type, which alternately includes a layer of a high refractive index and a layer of a low refractive index, and has a discontinuity of a band of the first conductivity type made quite smaller than that of a band of a second conduction type. On the second clad layer, there is disposed a second stack structure doped to the second conductivity type, which alternately includes a layer of a high refractive index and a layer of a low refractive index, and has a discontinuity of a band of the second conductivity type made quite smaller than that of the band of the first conductivity type. Each of the first and second stack structures serves as an optical filter and also forms a low-resistance conduction path.
摘要翻译：具有预定有效带隙，预定有效折射率和预定厚度的有源层夹在第一覆盖层和第二覆盖层之间。每个包覆层具有比有源层宽的有效带隙，有效折射率低于有源层的有效带隙和预定厚度。在第一包层上，设置掺杂到第一导电类型的第一堆叠结构，其交替地包括高折射率层和低折射率层，并且具有第一导电带的不连续性类型比第二导电类型的带宽小得多。在第二包覆层上设置掺杂到第二导电类型的第二堆叠结构，其交替地包括高折射率层和低折射率层，并且具有第二导电带的不连续性类型比第一导电类型的带宽小得多。第一和第二堆叠结构中的每一个用作滤光器并且还形成低电阻传导路径。

10. 发明授权

US5160993A High speed optosemiconductor device having multiple quantum wells 失效
标题翻译：具有多个量子阱的高速光电子器件
公开(公告)号：US5160993A
公开(公告)日：1992-11-03
申请号：US711548
申请日：1991-06-06
申请人： Hideaki Ishikawa , Yoshihiro Sugiyama , Shunichi Muto , Toshio Fujii
发明人： Hideaki Ishikawa , Yoshihiro Sugiyama , Shunichi Muto , Toshio Fujii
IPC分类号： G02F1/017 , G02F1/21 , H01L31/0352
CPC分类号： B82Y20/00 , G02F1/01716 , G02F1/218 , H01L31/035236 , H01L31/035281 , Y02E10/50
摘要： In an optosemiconductor device including a superlattice configuration (TBQ) of first and second quantum well layers and a potential barrier therebetween, photo-excited carriers are formed in the first quantum well layer and are tunnelled through the potential barrier toward the second quantum well layer, so that the tunneled carriers are accumulated in the second quantum well layer. An electric field is applied to the superlattice configuration to expel the tunneled carriers from the second quantum well layer.

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