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1. 发明申请

US20080283951A1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080283951A1
公开(公告)日：2008-11-20
申请号：US12078894
申请日：2008-04-08
申请人： Yoshihiro Nabe , Masaki Hatano , Hiroshi Asami , Akihiro Morimoto
发明人： Yoshihiro Nabe , Masaki Hatano , Hiroshi Asami , Akihiro Morimoto
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L27/14618 , H01L21/76898 , H01L23/3677 , H01L23/481 , H01L31/0203 , H01L2224/05001 , H01L2224/05009 , H01L2224/0557 , H01L2224/05647 , H01L2224/13025 , H01L2224/16 , H01L2924/01078 , H01L2924/01079 , H01L2924/10158 , H01L2924/16235 , H01L2924/3025 , H01L2924/00014
摘要： A semiconductor device includes a semiconductor substrate having a first electronic circuit and a second electronic circuit formed on an active surface, a pad electrode formed on the active surface by being connected to the first electronic circuit and/or the second electronic circuit, a first opening formed to some point along a depth of the semiconductor substrate toward the pad electrode from a surface opposite to the active surface of the semiconductor substrate, a second opening formed so as to reach the pad electrode from a bottom surface of the first opening, an insulating layer formed by covering sidewall surfaces of the first opening and the second opening, a conductive layer formed by covering at least an inner wall surface of the insulating layer and a bottom surface of the second opening, a third opening formed to some point along the depth of the semiconductor substrate from the surface opposite to the active surface of the semiconductor substrate, and a heat insulator imbedded in the third opening.
摘要翻译：半导体器件包括具有第一电子电路和形成在有源表面上的第二电子电路的半导体衬底，通过连接到第一电子电路和/或第二电子电路而形成在有源表面上的焊盘电极，第一开口从与半导体基板的有源面相反的表面沿着半导体基板的深度朝向焊盘电极的某一点形成第二开口，从第一开口的底面到达焊盘电极，形成绝缘体通过覆盖第一开口和第二开口的侧壁表面形成的层，通过覆盖绝缘层的至少内壁表面和第二开口的底表面形成的导电层，形成在沿着深度的某个点的第三开口的半导体衬底从与半导体衬底的有源表面相反的表面，以及绝热体imb 在第三次开幕。

2. 发明授权

US08455969B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08455969B2
公开(公告)日：2013-06-04
申请号：US12078894
申请日：2008-04-08
申请人： Yoshihiro Nabe , Masaki Hatano , Hiroshi Asami , Akihiro Morimoto
发明人： Yoshihiro Nabe , Masaki Hatano , Hiroshi Asami , Akihiro Morimoto
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L27/14618 , H01L21/76898 , H01L23/3677 , H01L23/481 , H01L31/0203 , H01L2224/05001 , H01L2224/05009 , H01L2224/0557 , H01L2224/05647 , H01L2224/13025 , H01L2224/16 , H01L2924/01078 , H01L2924/01079 , H01L2924/10158 , H01L2924/16235 , H01L2924/3025 , H01L2924/00014
摘要： A semiconductor device includes a semiconductor substrate having a first electronic circuit and a second electronic circuit formed on an active surface, a pad electrode formed on the active surface by being connected to the first electronic circuit and/or the second electronic circuit, a first opening formed to some point along a depth of the semiconductor substrate toward the pad electrode from a surface opposite to the active surface of the semiconductor substrate, a second opening formed so as to reach the pad electrode from a bottom surface of the first opening, an insulating layer formed by covering sidewall surfaces of the first opening and the second opening, a conductive layer formed by covering at least an inner wall surface of the insulating layer and a bottom surface of the second opening, a third opening formed to some point along the depth of the semiconductor substrate from the surface opposite to the active surface of the semiconductor substrate, and a heat insulator imbedded in the third opening.
摘要翻译：半导体器件包括具有第一电子电路和形成在有源表面上的第二电子电路的半导体衬底，通过连接到第一电子电路和/或第二电子电路而形成在有源表面上的焊盘电极，第一开口从与半导体基板的有源面相反的表面沿着半导体基板的深度朝向焊盘电极的某一点形成第二开口，从第一开口的底面到达焊盘电极，形成绝缘体通过覆盖第一开口和第二开口的侧壁表面形成的层，通过覆盖绝缘层的至少内壁表面和第二开口的底表面形成的导电层，形成在沿着深度的某个点的第三开口的半导体衬底从与半导体衬底的有源表面相反的表面，以及绝热体imb 在第三次开幕。

3. 发明申请

US20090200629A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090200629A1
公开(公告)日：2009-08-13
申请号：US12364072
申请日：2009-02-02
申请人： Hiroshi Asami , Yoshihiro Nabe , Akihiro Morimoto
发明人： Hiroshi Asami , Yoshihiro Nabe , Akihiro Morimoto
IPC分类号： H01L31/0203 , H01L21/50 , H01L27/146
CPC分类号： H01L27/14687 , H01L24/48 , H01L27/14618 , H01L31/0203 , H01L2224/48 , H01L2924/00014 , H01L2924/16195 , H01L2924/181 , H01L2224/48091 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2924/00
摘要： A semiconductor device which includes a semiconductor chip formed with a light-reception area, a spacer, and a transparent substrate. The spacer is bonded to the semiconductor chip via a first adhesive and surrounding the light-reception area. The transparent substrate is bonded to the spacer via a second adhesive and disposed above the light-reception area. A first projection having a predetermined height is formed on a surface of the spacer which is on a side of the semiconductor chip, and the first projection abuts on the semiconductor chip.
摘要翻译：一种半导体器件，包括形成有光接收区域的半导体芯片，间隔物和透明基板。间隔物通过第一粘合剂结合到半导体芯片并且围绕光接收区域。透明基板通过第二粘合剂粘合到间隔件上并设置在光接收区域的上方。具有预定高度的第一突起形成在半导体芯片一侧的间隔物的表面上，第一突起抵接在半导体芯片上。

4. 发明授权

US07939360B2 Semiconductor device and manufacturing method therefor 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07939360B2
公开(公告)日：2011-05-10
申请号：US12364072
申请日：2009-02-02
申请人： Hiroshi Asami , Yoshihiro Nabe , Akihiro Morimoto
发明人： Hiroshi Asami , Yoshihiro Nabe , Akihiro Morimoto
IPC分类号： H01L21/00 , H01L31/0203
CPC分类号： H01L27/14687 , H01L24/48 , H01L27/14618 , H01L31/0203 , H01L2224/48 , H01L2924/00014 , H01L2924/16195 , H01L2924/181 , H01L2224/48091 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2924/00
摘要： A semiconductor device which includes a semiconductor chip formed with a light-reception area, a spacer, and a transparent substrate. The spacer is bonded to the semiconductor chip via a first adhesive and surrounding the light-reception area. The transparent substrate is bonded to the spacer via a second adhesive and disposed above the light-reception area. A first projection having a predetermined height is formed on a surface of the spacer which is on a side of the semiconductor chip, and the first projection abuts on the semiconductor chip.
摘要翻译：一种半导体器件，包括形成有光接收区域的半导体芯片，间隔物和透明基板。间隔物通过第一粘合剂结合到半导体芯片并且围绕光接收区域。透明基板通过第二粘合剂粘合到间隔件上并设置在光接收区域的上方。具有预定高度的第一突起形成在半导体芯片一侧的间隔物的表面上，第一突起抵接在半导体芯片上。

5. 发明申请

US20120205817A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件和半导体器件的制造方法
公开(公告)号：US20120205817A1
公开(公告)日：2012-08-16
申请号：US13454139
申请日：2012-04-24
申请人： Hiroshi Asami , Masaki Hatano , Akihiro Morimoto
发明人： Hiroshi Asami , Masaki Hatano , Akihiro Morimoto
IPC分类号： H01L23/498
CPC分类号： H01L27/14636 , H01L21/486 , H01L23/49827 , H01L24/83 , H01L27/1464 , H01L27/1469 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/83801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/00 , H01L2924/01047 , H01L2924/01049 , H01L2924/01079 , H01L2924/01083 , H01L2224/13111 , H01L2924/00012 , H01L2224/13109 , H01L2924/00014
摘要： A semiconductor device including a component substrate of a semiconductor device; electrode pads provided on one surface of the component substrate; a support plate material reinforcing the component substrate; via holes made in the support plate material; a conducting material filled in the via holes; and a joining member interposed between the electrode pads and the conducting material and joining the component substrate and the support plate material.
摘要翻译：一种半导体器件，包括半导体器件的元件衬底; 设置在所述部件基板的一个表面上的电极焊盘; 增强部件基板的支撑板材料; 在支撑板材料上形成的通孔; 填充在通孔中的导电材料; 以及插入在电极焊盘和导电材料之间并将部件基板和支撑板材料接合的接合部件。

6. 发明申请

US20100244270A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件和半导体器件的制造方法
公开(公告)号：US20100244270A1
公开(公告)日：2010-09-30
申请号：US12727804
申请日：2010-03-19
申请人： Hiroshi Asami , Masaki Hatano , Akihiro Morimoto
发明人： Hiroshi Asami , Masaki Hatano , Akihiro Morimoto
IPC分类号： H01L23/48 , H01L21/50
CPC分类号： H01L27/14636 , H01L21/486 , H01L23/49827 , H01L24/83 , H01L27/1464 , H01L27/1469 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/83801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/00 , H01L2924/01047 , H01L2924/01049 , H01L2924/01079 , H01L2924/01083 , H01L2224/13111 , H01L2924/00012 , H01L2224/13109 , H01L2924/00014
摘要： A semiconductor device includes: a component substrate of a semiconductor device; electrode pads provided on one surface of the component substrate; a support plate material reinforcing the component substrate; via holes made in the support plate material; a conducting material filled in the via holes; and a joining member interposed between the electrode pads and the conducting material and joining the component substrate and the support plate material.
摘要翻译：半导体器件包括：半导体器件的元件衬底; 设置在所述部件基板的一个表面上的电极焊盘; 增强部件基板的支撑板材料; 在支撑板材料上形成的通孔; 填充在通孔中的导电材料; 以及插入在电极焊盘和导电材料之间并将部件基板和支撑板材料接合的接合部件。

7. 发明授权

US08227912B2 Semiconductor device with Cu metal-base and manufacturing method thereof 失效
标题翻译：具有Cu金属基的半导体器件及其制造方法
公开(公告)号：US08227912B2
公开(公告)日：2012-07-24
申请号：US11664279
申请日：2004-10-10
申请人： Tadahiro Ohmi , Akihiro Morimoto
发明人： Tadahiro Ohmi , Akihiro Morimoto
IPC分类号： H01L23/36
CPC分类号： H01L29/7813 , H01L21/84 , H01L27/12 , H01L29/045 , H01L29/41741 , H01L29/456 , H01L29/66734 , H01L29/732 , H01L29/7397 , H01L29/74 , H01L29/744 , H01L29/78603 , H01L2924/0002 , H05K1/053 , H01L2924/00
摘要： As a substrate for a semiconductor device, a metal substrate is used, and the metal substrate is composed of a metal base body made of a first metal and a connecting metal layer made of a second metal for covering the metal base body. The substrate has a structure wherein a diffusion preventing layer for preventing diffusion of the first metal is provided on the connecting metal layer.
摘要翻译：作为半导体装置的基板，使用金属基板，金属基板由第一金属制的金属基体和由覆盖金属基体的第二金属构成的连接金属层构成。基板具有其中在连接金属层上设置防止第一金属扩散的扩散防止层的结构。

8. 发明授权

US08217270B2 Multilayer circuit board and electronic device 失效
标题翻译：多层电路板和电子设备
公开(公告)号：US08217270B2
公开(公告)日：2012-07-10
申请号：US11990860
申请日：2006-08-18
申请人： Tadahiro Ohmi , Akinobu Teramoto , Akihiro Morimoto
发明人： Tadahiro Ohmi , Akinobu Teramoto , Akihiro Morimoto
IPC分类号： H05K1/03
CPC分类号： H05K1/024 , H05K3/4602 , H05K3/4626 , H05K3/4673 , H05K2201/0116 , H05K2201/0195 , H05K2201/0209 , H05K2201/0254
摘要： A multilayered circuit board which is provided with a low-permittivity interlayer insulating film, and which can significantly improve the performance such as signal transmission characteristics of the multilayered circuit board such as a package and a printed board, because the surface in contact with the interlayer insulating film of the circuit board has no unevenness to eliminate the lowering of production yield and the deterioration of high-frequency signal transmission characteristics; and electronic equipment using the circuit board. The multilayered circuit board comprises, mounted on a substrate, plural wiring layers and plural insulating layers positioned between the plural wiring layers, wherein at least part of the plural insulating layers are composed of a porous insulating layer containing at least any of materials selected from a porous material group consisting of porous material, aerogel, porous silica, porous polymer, hollow silica and hollow polymer, and a non-porous insulating layer formed on at least one surface of the porous insulating layer and not containing the porous material group.
摘要翻译：具有低介电常数层间绝缘膜的多层电路板，能够显着地提高诸如封装和印刷电路板的多层电路板的信号传输特性等性能，因为与中间层电路板的绝缘膜没有不均匀性，消除了生产成本的降低和高频信号传输特性的恶化; 和使用电路板的电子设备。多层电路板包括安装在基板上的多个布线层和位于多个布线层之间的多个绝缘层，其中多个绝缘层的至少一部分由多孔绝缘层组成，多孔绝缘层至少含有选自由多孔材料，气凝胶，多孔二氧化硅，多孔聚合物，中空二氧化硅和中空聚合物组成的多孔材料组和形成在多孔绝缘层的至少一个表面上并且不包含多孔材料组的无孔绝缘层。

9. 发明授权

US08188372B2 Flex-rigid printed wiring board and manufacturing method thereof 有权
标题翻译：柔性刚性印刷线路板及其制造方法
公开(公告)号：US08188372B2
公开(公告)日：2012-05-29
申请号：US12442016
申请日：2006-09-21
申请人： Akihiro Sato , Masahiro Sasaki , Tadahiro Ohmi , Akihiro Morimoto
发明人： Akihiro Sato , Masahiro Sasaki , Tadahiro Ohmi , Akihiro Morimoto
IPC分类号： H05K1/02 , H05K3/46
CPC分类号： H05K3/4691 , C23F1/02 , C23F1/18 , C23F4/00 , C23F4/04 , H05K3/064 , H05K3/243 , H05K3/4652 , H05K2201/09736 , H05K2203/0369 , Y10T29/49117 , Y10T29/49155 , Y10T29/49165 , Y10T156/10
摘要： A flex-rigid printed wiring board is provided which can retain flexibility of a flexible portion while increasing durability of the flexible portion against folding, and can ensure conduction in a rigid portion, and a method of manufacturing the printed wiring board.The flex-rigid printed wiring board includes a conductor layer provided on at least one face of a base film, one region of the wiring board containing the base film being a rigid region, an another region containing the base film being a flexible region. The average thickness “tf” of the conductor layer on the base film formed in the flexible region and the average thickness “tR” of the conductor layer on the base film formed in the rigid region satisfy the relationship of tf
摘要翻译：提供柔性刚性印刷线路板，其可以保持柔性部分的柔性，同时增加柔性部分的折叠的耐久性，并且可以确保刚性部分中的导电性，以及制造印刷线路板的方法。柔性刚性印刷电路板包括设置在基膜的至少一个面上的导体层，所述布线基板的一个区域包含基膜为刚性区域，另一区域包含基膜为柔性区域。形成在柔性区域的基底膜上的导体层的平均厚度“tf”和形成在刚性区域中的基底膜上的导体层的平均厚度“tR”满足tf

10. 发明授权

US07988130B2 Valve for vacuum exhaustion system 有权
标题翻译：真空排气系统阀门
公开(公告)号：US07988130B2
公开(公告)日：2011-08-02
申请号：US12208949
申请日：2008-09-11
申请人： Tadahiro Ohmi , Nobukazu Ikeda , Michio Yamaji , Masafumi Kitano , Akihiro Morimoto
发明人： Tadahiro Ohmi , Nobukazu Ikeda , Michio Yamaji , Masafumi Kitano , Akihiro Morimoto
IPC分类号： F16K7/17
CPC分类号： F16K7/14 , F16K27/003 , F16K51/02
摘要： The invention provides a valve and a method of operating the valve that makes it possible to reduce the diameter of the vacuum exhaustion pipings to make the facility for the vacuum exhaustion system small, which results in lower costs and shortens vacuum exhaustion time, and also which can prevent corrosion, cloggings, and seal leakages inside the piping system caused by the accumulation of substances produced by the decomposition of gas flowing through the pipings. In particular, in accordance with the present invention, an aluminum passivation is applied on the piping parts, i.e. the valve and others, that are used in the vacuum exhaustion system so as to inhibit gas decomposition caused by temperature rise at the time of baking so that components for reduction in the diameter size in the vacuum exhaustion system are provided. Thus, corrosion, cloggings and seat leakages caused by gas decomposition are prevented.
摘要翻译：本发明提供了一种操作阀门的阀门和方法，其使得可以减小真空排气管道的直径，从而使得真空耗尽系统的设备较小，这导致降低成本并缩短真空耗尽时间，以及哪些可以防止由流经管道的气体分解产生的物质积聚引起的管道系统内的腐蚀，堵塞和密封泄漏。特别地，根据本发明，在真空耗尽系统中使用的管道部件即阀等上施加铝钝化，以便抑制由于烘烤时由温度升高引起的气体分解提供了用于减小真空排气系统中的直径尺寸的部件。因此，防止由气体分解引起的腐蚀，堵塞和座椅泄漏。

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