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1. 发明授权

US5021103A Method of forming microcrystalline silicon-containing silicon carbide film 失效
标题翻译：形成微晶硅的碳化硅膜的方法
公开(公告)号：US5021103A
公开(公告)日：1991-06-04
申请号：US517479
申请日：1990-05-02
申请人： Yoshihiro Hamakawa , Hiroaki Okamoto , Yutaka Hattori
发明人： Yoshihiro Hamakawa , Hiroaki Okamoto , Yutaka Hattori
IPC分类号： H01L31/04 , C23C16/32 , H01L21/205 , H01L31/0376 , H01L31/075 , H01L31/20
CPC分类号： H01L31/03765 , C23C16/325 , H01L31/075 , H01L31/204 , Y02E10/548 , Y02P70/521 , Y10S148/148 , Y10S438/931
摘要： A microcrystalline silicon-containing silicon carbide semiconductor film has an optical energy gap of not less than 2.0 eV, and a dark electric conductivity of less than 10.sup.-6 Scm.sup.-1. The Raman scattering light of the microcrystalline silicon-containing silicon carbide semiconductor film, which shows the presence of silicon crystal phase, has a peak in the vicinity of 530 cm.sup.-1. This microcrystalline silicon-containing silicon carbide semiconductor film is formed on a substrate by preparing a mixture gas having a hydrogen dilution rate .gamma., which is the ratio of the partial pressure of hydrogen gas to the sum of the partial pressure of a silicon-containing gas and the partial pressure of a carbon-containing gas, of 30, transmitting microwave of a frequency of not less than 100 MHz into the mixture gas near a substrate with an electric power density of not less than 4.4.times.10.sup.-2, and generating plasma at a temperature of the substrate of not less than 200.degree. C. and under a gas pressure of not less than 10.sup.-2 Torr.
摘要翻译：微晶硅的碳化硅半导体膜具有不小于2.0eV的光能隙和小于10-6Scm-1的暗电导率。显示硅晶相存在的微晶硅的碳化硅半导体膜的拉曼散射光在530cm -1附近具有峰值。这种微晶硅的碳化硅半导体膜通过制备具有氢稀释比γ的混合气体形成在基板上，氢气稀释比率γ是氢气分压与含硅气体的分压之和的比率以及30℃的含碳气体的分压，将不小于100MHz的频率的微波传输到基板的附近的混合气体中，电功率密度不低于4.4×10 -2，并产生等离子体基材的温度不低于200℃，气压不小于10-2乇。

2. 发明授权

US5686734A Thin film semiconductor device and photoelectric conversion device using the thin film semiconductor device 失效
标题翻译：薄膜半导体器件和使用该薄膜半导体器件的光电转换器件
公开(公告)号：US5686734A
公开(公告)日：1997-11-11
申请号：US502603
申请日：1995-07-14
申请人： Yoshihiro Hamakawa , Shigetoshi Sugawa , Tadashi Atoji , Hiroaki Okamoto
发明人： Yoshihiro Hamakawa , Shigetoshi Sugawa , Tadashi Atoji , Hiroaki Okamoto
IPC分类号： H01L29/165 , H01L31/0376 , H01L31/107 , H01L29/12
CPC分类号： H01L31/03765 , H01L29/165 , H01L31/1075 , Y02E10/548
摘要： A high performance thin film semiconductor device having a heterojunction such as a photoelectric conversion device is disclosed. In accordance with the present invention, the thin film semiconductor device comprises a thin semiconductor layer which forms a heterojunction with a non-single crystal silicon layer or non-single crystal silicon-germanium layer, wherein the valence band discontinuity at the heterointerface arising from the difference in optical energy bandgap is as small as 0.3 eV or less and wherein the thin semiconductor layer has an optical energy bandgap greater than 2.8 eV, so that hole transport performance may not be degraded. Such a thin semiconductor layer may be formed by using silane gas and methane gas with a flow rate ratio greater than 30 at a deposition rate less than 0.5 .ANG./sec.
摘要翻译：公开了具有异质结的高性能薄膜半导体器件，例如光电转换器件。根据本发明，薄膜半导体器件包括与非单晶硅层或非单晶硅 - 锗层形成异质结的薄半导体层，其中由异源结面产生的价带不连续性光能带隙的差异小到0.3eV或更小，并且其中薄的半导体层具有大于2.8eV的光能带隙，使得空穴传输性能不会降低。这种薄的半导体层可以通过使用硅烷气体和甲烷气体形成，其流速比大于30，沉积速率小于每分钟0.5安培。

3. 发明授权

US4496788A Photovoltaic device 失效
标题翻译：光伏装置
公开(公告)号：US4496788A
公开(公告)日：1985-01-29
申请号：US528988
申请日：1983-09-02
申请人： Yoshihiro Hamakawa , Hiroaki Okamoto , Kouji Okuda
发明人： Yoshihiro Hamakawa , Hiroaki Okamoto , Kouji Okuda
IPC分类号： H01L31/0236 , H01L31/0368 , H01L31/078 , H01L31/06
CPC分类号： H01L31/0236 , H01L31/03685 , H01L31/0747 , H01L31/078 , Y02E10/545 , Y02E10/548
摘要： A photovoltaic device comprising at least one crystalline and one amorphous semiconductor region with different photosensitivity is provided to absorb light in a wide range of wavelength, and serves, for example, as a solar battery or a color sensor. Amorphous or microcrystalline semiconductor regions comprising those devices can be deposited easily and in a continuous manufacturing process by the use of a low temperature process, and this allows manufacture of a photovoltaic device at low cost.
摘要翻译：提供包括具有不同光敏性的至少一个晶体和一个非晶半导体区域的光电器件以吸收宽波长范围内的光，并且例如用作太阳能电池或颜色传感器。包括那些器件的非晶或微晶半导体区域可以通过使用低温工艺容易地并且在连续制造工艺中沉积，并且这允许以低成本制造光伏器件。

4. 发明授权

US5976906A Method for manufacturing a solid state image sensing device 失效
标题翻译：固体摄像装置的制造方法
公开(公告)号：US5976906A
公开(公告)日：1999-11-02
申请号：US733914
申请日：1996-10-18
申请人： Kenji Takada , Kouichi Ishida , Yoshihiro Hamakawa , Hiroaki Okamoto
发明人： Kenji Takada , Kouichi Ishida , Yoshihiro Hamakawa , Hiroaki Okamoto
IPC分类号： H01L27/148 , H01L31/0224 , H01L21/00
CPC分类号： H01L31/022408 , H01L27/14806
摘要： A solid state image sensing device having a semiconductor substrate, a first diffusion region of a positive or negative conductive type provided on the semiconductor substrate, a plurality of second diffusion regions each of which is an opposite conductive type relative to the first diffusion region and is provided in the first diffusion region, and a semiconductor thin layer provided on at least the second diffusion regions.
摘要翻译：一种固体摄像装置，具有半导体衬底，设置在半导体衬底上的正或负导电类型的第一扩散区域，多个第二扩散区域，每个第二扩散区域相对于第一扩散区域为相反的导电类型，并且是设置在第一扩散区域中，以及设置在至少第二扩散区域上的半导体薄层。

5. 发明授权

US4271328A Photovoltaic device 失效
标题翻译：光伏装置
公开(公告)号：US4271328A
公开(公告)日：1981-06-02
申请号：US130536
申请日：1980-03-14
申请人： Yoshihiro Hamakawa , Hiroaki Okamoto , Yoshiteru Nitta , Toshio Adachi
发明人： Yoshihiro Hamakawa , Hiroaki Okamoto , Yoshiteru Nitta , Toshio Adachi
IPC分类号： H01L31/04 , H01L31/075 , H01L31/076 , H01L31/20 , H01L31/06
CPC分类号： H01L31/076 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic device including a plurality of amorphous silicon unit cells each having a p-i-n structure layered in succession on a substrate made of stainless steel. A transparent electrically conductive layer, for withdrawing a photoelectromotive force in cooperation with the electrically conductive substrate, is formed on the uppermost unit cell, so that rays of light may be incident upon the photovoltaic device from the uppermost unit cell. Preferably, the thickness of the unit cells closer to the light incidence surface is selected to be less than the thickness of the unit cells farther from the light incident surface. Each of the unit cells is structured such that the n type, i type and p type layers are disposed in the above described order from the light incidence surface in terms of the impurity type.
摘要翻译：一种光电器件，包括多个非晶硅单位电池，每个非晶硅单位电池各自具有在由不锈钢制成的基板上分层的p-i-n结构。在最上面的单元电池上形成用于与导电衬底配合地抽出光电动势的透明导电层，使得光线从最上面的单电池入射到光电器件上。优选地，更靠近光入射表面的单元电池的厚度被选择为小于远离光入射表面的单元电池的厚度。每个单电池被构造成使得n型，i型和p型层以杂质类型从光入射表面按照上述顺序设置。

6. 发明授权

US5942788A Solid state image sensing device 失效
标题翻译：固态摄像装置
公开(公告)号：US5942788A
公开(公告)日：1999-08-24
申请号：US640447
申请日：1996-04-30
申请人： Kenji Takada , Kouichi Ishida , Keiichi Nomura , Yoshihiro Hamakawa , Hiroaki Okamoto
发明人： Kenji Takada , Kouichi Ishida , Keiichi Nomura , Yoshihiro Hamakawa , Hiroaki Okamoto
IPC分类号： H01L27/148 , H01L31/0224 , H01L31/107 , H01L31/00 , H01L31/075 , H01L31/105
CPC分类号： H01L31/022408 , H01L27/14806
摘要： A solid state image sensing device having a semiconductor substrate, a first diffusion region of a positive or negative conductive type provided on the semiconductor substrate, a plurality of second diffusion regions each of which is an opposite conductive type relative to the first diffusion region and is provided in the first diffusion region, and a semiconductor thin layer provided on at least the second diffusion regions.
摘要翻译：一种固体摄像装置，具有半导体衬底，设置在所述半导体衬底上的正或负导电类型的第一扩散区域，多个第二扩散区域，每个所述第二扩散区域相对于所述第一扩散区域为相反的导电类型，并且是设置在第一扩散区域中，以及设置在至少第二扩散区域上的半导体薄层。

7. 发明授权

US06515837B1 Magnetoresistive head and magnetic storage apparatus 失效
标题翻译：磁阻磁头和磁存储装置
公开(公告)号：US06515837B1
公开(公告)日：2003-02-04
申请号：US09662643
申请日：2000-09-15
申请人： Yoshihiro Hamakawa , Shiroyasu Odai , Katsumi Hoshino
发明人： Yoshihiro Hamakawa , Shiroyasu Odai , Katsumi Hoshino
IPC分类号： G11B539
CPC分类号： G11B5/3903 , G11B5/3109 , G11B5/3133 , G11B5/3146
摘要： There is provided a magnetoresistive head which is capable of suppressing the fluctuation of read output while ensuring a sufficient dielectric breakdown voltage of the shielding portions by constituting the shielding portions with a Co-based material. Namely, the lower shield film is formed of a 2-ply composite film wherein the film (12′) of the lower shield film which is disposed contacting with the lower gap insulation film (13) is constituted by an amorphous soft magnetic film, while the film (12) which is disposed away from the lower gap insulation film is constituted by a crystalline soft magnetic film, thereby making it possible to suppress the fluctuation of read output even if the gap is narrowed without deteriorating the yield relative to the dielectric breakdown.
摘要翻译：提供了一种磁阻头，其能够通过用Co基材料构成屏蔽部分来确保屏蔽部分的足够的介电击穿电压，从而抑制读取输出的波动。也就是说，下屏蔽膜由2层复合膜形成，其中下屏蔽膜的与下间隙绝缘膜（13）接触的膜（12'）由非晶软磁膜构成，而离开下间隔绝缘膜设置的膜（12）由结晶软磁膜构成，从而即使间隙变窄而不会使相对于介质击穿的屈服劣化也可以抑制读取输出的波动。

8. 发明授权

US06327123B1 Magnetic head employing magnetoresistive sensor and magnetic storage and retrieval system 失效
标题翻译：磁头采用磁阻传感器和磁存储和检索系统
公开(公告)号：US06327123B1
公开(公告)日：2001-12-04
申请号：US09368472
申请日：1999-08-04
申请人： Yoshiaki Kawato , Hiroshi Fukui , Kenichi Meguro , Yoshihiro Hamakawa
发明人： Yoshiaki Kawato , Hiroshi Fukui , Kenichi Meguro , Yoshihiro Hamakawa
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , G11B5/3967 , G11B2005/3996
摘要： A magnetic head is provided with a magnetoresistive sensor scarcely susceptible to heat and provided with a fixed layer capable of creating a pinned magnetic field of a sufficient intensity. The magnetic head comprises a magnetoresistive effect film having a free layer (21), a fixed layer (105) and an intermediate layer (104), and a pair of electrodes (25a, 25b) for supplying current to the magnetoresistance effect film. The free layer (21) is formed of a ferromagnetic material and the intermediate layer (104) is formed of a nonmagnetic material. The fixed layer (105) has a first ferromagnetic film (22), a second ferromagnetic film (24) and a nonmagnetic film (23) sandwiched between the first and the second ferromagnetic films (22, 24). The second ferromagnetic film (24) farther from the free layer (21) than the first ferromagnetic layer (22) is formed of a material having the property of permanent magnets. The magnetization of the fist ferromagnetic film (22) and that of the second ferromagnetic film (24) are coupled in an antiferromagnetic coupling fashion.
摘要翻译：磁头设置有几乎不易受热的磁阻传感器，并且具有能够产生足够强度的固定磁场的固定层。磁头包括具有自由层（21），固定层（105）和中间层（104）的磁阻效应膜和用于向磁阻效应膜提供电流的一对电极（25a，25b）。自由层（21）由铁磁材料形成，中间层（104）由非磁性材料形成。固定层（105）具有夹在第一和第二铁磁性膜（22,24）之间的第一铁磁膜（22），第二铁磁膜（24）和非磁性膜（23）。离开自由层（21）比第一铁磁层（22）更远的第二铁磁膜（24）由具有永磁体性质的材料形成。第一铁磁膜（22）和第二铁磁膜（24）的磁化以反铁磁耦合方式耦合。

9. 发明授权

US4491682A Amorphous silicon photovoltaic device including a two-layer transparent electrode 失效
标题翻译：非晶硅光电器件包括两层透明电极
公开(公告)号：US4491682A
公开(公告)日：1985-01-01
申请号：US552952
申请日：1983-11-17
申请人： Yoshihiro Hamakawa , Yoshihisa Tawada
发明人： Yoshihiro Hamakawa , Yoshihisa Tawada
IPC分类号： H01L31/0224 , H01L31/0376 , H01L31/075 , H01L31/20 , H01L31/06
CPC分类号： H01L31/202 , H01L31/022466 , H01L31/0376 , H01L31/075 , H01L31/20 , Y02E10/548 , Y02P70/521 , Y10S420/903
摘要： An amorphous silicon semiconductor of the general formula: a-Si.sub.(1-x-y) C.sub.x N.sub.y containing hydrogen and/or fluorine, which provides an amorphous silicon PIN junction photovoltaic device having an improved conversion efficiency when it is used as a P-type or N-type semiconductor in the layer on the light impinging side of the PIN junction photovoltaic device. Also, the conversion efficiency of an amorphous silicon PIN junction photovoltaic device is improved by using a film of ITO and SnO.sub.2 two layer structure as a transparent electrode for the photovoltaic device with the SnO.sub.2 layer contacting the P or N layer, and the improvement is particularly marked in the heterojunction photovoltaic device.

10. 发明授权

US4453184A Solid state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4453184A
公开(公告)日：1984-06-05
申请号：US329097
申请日：1981-12-09
申请人： Yoshihiro Hamakawa , Yosuke Nakajima
发明人： Yoshihiro Hamakawa , Yosuke Nakajima
IPC分类号： H01L27/146 , H01L31/105 , H04N5/335 , H04N5/369 , H04N5/372 , H04N5/374 , H04N3/14
CPC分类号： H01L31/1055 , H01L27/14643 , H01L27/14665
摘要： A solid state imaging device using a non-crystalline semiconductor material as a photoconductive member. The photoconductive member is arranged in repetitive p-i-n layers such that an opto electromotive force is developed sufficient to drive charges to an integrated scanning circuit even in the absence of an external bias voltage.
摘要翻译：使用非晶体半导体材料作为感光体的固态成像装置。光电导体被布置在重复的p-i-n层中，使得即使在没有外部偏置电压的情况下，光电动势被发展成足以驱动电荷到集成扫描电路。

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