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1. 发明授权

US5810923A Method for forming oxide thin film and the treatment of silicon substrate 失效
标题翻译：用于形成氧化物薄膜的方法和硅衬底的处理
公开(公告)号：US5810923A
公开(公告)日：1998-09-22
申请号：US644829
申请日：1996-05-10
申请人： Yoshihiko Yano , Takao Noguchi , Katsuto Nagano
发明人： Yoshihiko Yano , Takao Noguchi , Katsuto Nagano
IPC分类号： C30B23/02 , H01L21/28 , H01L21/316 , H01L21/336 , H01L29/51 , C03B25/02
CPC分类号： H01L21/28194 , C30B23/02 , C30B29/22 , H01L21/316 , H01L29/517 , H01L29/66575
摘要： The invention provides an oxide thin film in the form of an epitaxial film of the composition: Zr.sub.1-x R.sub.x O.sub.2-.delta. wherein R is a rare earth metal inclusive of Y, x=0 to 0.75, preferably x=0.20 to 0.50, formed on a surface of a single crystal silicon substrate. A rocking curve of the film has a half-value width of up to 1.50.degree.. The film has a ten point mean roughness Rz of up to 0.60 nm across a reference length of 500 nm. An epitaxial film of the composition ZrO.sub.2 is constructed by unidirectionally oriented crystals. When a functional film is to be formed on the oxide thin film serving as a buffer film, an adequately epitaxially grown functional film of quality is available. Particularly when the single crystal substrate is rotated within its plane, an oxide thin film of uniform high quality having an area as large as 10 cm.sup.2 or more is obtained.
摘要翻译：本发明提供了一种组成为Zr1-xRxO2-δ的外延膜形式的氧化物薄膜，其中R是含有Y，x = 0至0.75，优选x = 0.20至0.50的稀土金属，优选x = 0.20至0.50，形成于单晶硅衬底的表面。薄膜的摇摆曲线半值宽度可达1.50度。该膜在500nm的参考长度上具有高达0.60nm的十点平均粗糙度Rz。组成ZrO2的外延膜由单向取向晶体构成。当在用作缓冲膜的氧化物薄膜上形成功能膜时，可以获得质量良好的外延生长的功能膜。特别是当单晶基板在其平面内旋转时，获得具有10cm 2或更大面积的均匀高质量的氧化物薄膜。

2. 发明授权

US06258459B1 Multilayer thin film 有权
标题翻译：多层薄膜
公开(公告)号：US06258459B1
公开(公告)日：2001-07-10
申请号：US09300452
申请日：1999-04-28
申请人： Takao Noguchi , Yoshihiko Yano
发明人： Takao Noguchi , Yoshihiko Yano
IPC分类号： B32B904
CPC分类号： B32B15/04 , C30B23/02 , C30B29/32
摘要： The first object of the invention is to provide means that enables a perovskite oxide thin film having (100) orientation, (001) orientation or (111) orientation to be easily obtained, and the second object of the invention is to provide a multilayer thin film comprising a unidirectionally oriented metal thin film of good crystallinity. The multilayer thin film according to the first embodiment of the invention comprises a buffer layer and a perovskite oxide thin film present thereon. The interface between the buffer layer and the perovskite oxide thin film is made up of a {111} facet plane. Substantially parallel to the facet plane there is present a {110} face of a cubic, rhombohedral, tetragonal or orthorhombic crystal of the perovskite oxide thin film, a {101} face of the tetragonal or orthorhombic crystal or a {011} face of the orthorhombic crystal. The multilayer thin film according to the second embodiment of the invention comprises a metal thin film that is a cubic (100) unidirectionally oriented epitaxial film, and a buffer layer where a {111} facet plane is present on the interface of the buffer layer in contact with the metal thin film.
摘要翻译：本发明的第一个目的是提供能够容易地获得具有（100）取向（001）取向或（111）取向的钙钛矿氧化物薄膜的方法，本发明的第二个目的是提供一种多层薄膜膜包含具有良好结晶度的单向取向金属薄膜。根据本发明第一实施方案的多层薄膜包含缓冲层和存在于其上的钙钛矿氧化物薄膜。缓冲层与钙钛矿氧化物薄膜的界面由{111}面平面构成。基本平行于面平面，存在钙钛矿氧化物薄膜的立方晶体，菱方晶，四方晶或正交晶体的{110}面，正方晶或正交晶体的{101}面或正交晶体。根据本发明的第二实施方式的多层薄膜包括作为立方体（100）单向取向外延膜的金属薄膜和在缓冲层的界面上存在{111}面平面的缓冲层与金属薄膜接触。

3. 发明授权

US5919515A Ferroelectric thin film, electric device and method for preparing ferroelectric thin film 失效
标题翻译：制备铁电YMnO3薄膜的方法
公开(公告)号：US5919515A
公开(公告)日：1999-07-06
申请号：US855444
申请日：1997-05-13
申请人： Yoshihiko Yano , Takao Noguchi
发明人： Yoshihiko Yano , Takao Noguchi
IPC分类号： C30B29/22 , C23C14/00 , C23C14/02 , C23C14/08 , C30B23/02 , H01G4/33 , H01L21/283 , H01L21/8242 , H01L21/8246 , H01L21/8247 , H01L27/10 , H01L27/105 , H01L27/108 , H01L29/788 , H01L29/792 , C23C14/24
CPC分类号： C23C14/08 , C23C14/0021 , C23C14/024 , C30B23/02 , C30B29/22
摘要： On a single crystal substrate such as silicon, a ferroelectric thin film having a YMnO.sub.3 hexagonal crystal structure, composed mainly of a rare earth element (inclusive of scandium and yttrium), manganese and oxygen, and c-plane oriented parallel to the substrate surface is formed, preferably with an epitaxial oxide film or conductive epitaxial film being interposed therebetween. It is suitable for gate type non-volatile memory devices having MFIS and MFMIS structures.
摘要翻译：在诸如硅的单晶衬底上，主要由稀土元素（包括钪和钇）组成的具有YMnO 3六方晶体结构的铁电薄膜，锰和氧以及平行于衬底表面取向的c面是形成，优选地具有外延氧化膜或导电外延膜之间。适用于具有MFIS和MFMIS结构的门型非易失性存储器件。

4. 发明授权

US5955213A Ferroelectric thin film, electric device, and method for preparing ferroelectric thin film 失效
标题翻译：铁电薄膜，电子器件和制备铁电薄膜的方法
公开(公告)号：US5955213A
公开(公告)日：1999-09-21
申请号：US524809
申请日：1995-09-07
申请人： Yoshihiko Yano , Takao Noguchi
发明人： Yoshihiko Yano , Takao Noguchi
IPC分类号： C30B29/22 , C23C14/00 , C23C14/02 , C23C14/08 , C30B23/02 , H01G4/33 , H01L21/283 , H01L21/8242 , H01L21/8246 , H01L21/8247 , H01L27/10 , H01L27/105 , H01L27/108 , H01L29/788 , H01L29/792 , B32B17/00
CPC分类号： C23C14/08 , C23C14/0021 , C23C14/024 , C30B23/02 , C30B29/22
摘要： On a single crystal substrate such as silicon, a ferroelectric thin film having a YMnO.sub.3 hexagonal crystal structure, composed mainly of a rare earth element (inclusive of scandium and yttrium), manganese and oxygen, and c-plane oriented parallel to the substrate surface is formed, preferably with an epitaxial oxide film or conductive epitaxial film being interposed therebetween. It is suitable for gate type non-volatile memory devices having MFIS and MFMIS structures.
摘要翻译：在诸如硅的单晶衬底上，主要由稀土元素（包括钪和钇）组成的具有YMnO 3六方晶体结构的铁电薄膜，锰和氧以及平行于衬底表面取向的c面是形成，优选地具有外延氧化膜或导电外延膜之间。适用于具有MFIS和MFMIS结构的门型非易失性存储器件。

5. 发明授权

US06709776B2 Multilayer thin film and its fabrication process as well as electron device 有权
标题翻译：多层薄膜及其制造工艺以及电子器件
公开(公告)号：US06709776B2
公开(公告)日：2004-03-23
申请号：US09842805
申请日：2001-04-27
申请人： Takao Noguchi , Yoshihiko Yano , Hisatoshi Saitou , Hidenori Abe
发明人： Takao Noguchi , Yoshihiko Yano , Hisatoshi Saitou , Hidenori Abe
IPC分类号： B32B900
CPC分类号： C30B23/02 , C30B25/02 , C30B29/22 , Y10T428/2495
摘要： The invention has for its objects to provide a multilayer thin film comprising a ferroelectric thin film preferentially (001) oriented on an Si substrate, its fabrication process, and an electron device. To attain these object, the invention provides a multilayer thin film formed on a substrate by epitaxial growth, which comprises a buffer layer comprising an oxide and a ferroelectric thin film, with a metal thin film and an oxide thin film formed in this order between the buffer layer and the ferroelectric thin film, its fabrication process, and an electron device.
摘要翻译：本发明的目的是提供一种多层薄膜，其包括在Si衬底上取向的优先（001）铁电薄膜，其制造工艺和电子器件。为了实现这些目的，本发明提供了一种通过外延生长在基板上形成的多层薄膜，其包括由氧化物和铁电薄膜构成的缓冲层，金属薄膜和氧化物薄膜之间依次形成缓冲层和铁电薄膜，其制造工艺和电子器件。

6. 发明授权

US06387712B1 Process for preparing ferroelectric thin films 有权
标题翻译：制备铁电薄膜的工艺
公开(公告)号：US06387712B1
公开(公告)日：2002-05-14
申请号：US09453505
申请日：1999-12-03
申请人： Yoshihiko Yano , Takao Noguchi
发明人： Yoshihiko Yano , Takao Noguchi
IPC分类号： H01L2100
CPC分类号： C23C14/08 , C23C14/0026 , H01L21/31691 , H01L29/516 , Y10S438/909
摘要： In a film structure comprising a ferroelectric thin film formed on a substrate, the ferroelectric thin film contains a rare earth element (Rn), Pb, Ti, and O in an atomic ratio in the range: 0.8≦(Pb+Rn)/Ti≦1.3 and 0.5≦Pb/(Pb+Rn)≦0.99, has a perovskite type crystal structure, and is of (001) unidirectional orientation or a mixture of (001) orientation and (100) orientation. The ferroelectric thin film can be formed on a silicon (100) substrate, typically by evaporating lead oxide and TiOx in a vacuum chamber while introducing an oxidizing gas therein.
摘要翻译：在包含在基板上形成的铁电薄膜的薄膜结构体中，铁电薄膜含有原子比为0.8 <=（Pb + Rn）/ 2的稀土元素（Rn），Pb，Ti和O。 Ti <= 1.3和0.5 <= Pb /（Pb + Rn）<= 0.99，具有钙钛矿型晶体结构，为（001）单向取向或（001）取向和（100）取向的混合物。铁电薄膜可以形成在硅（100）衬底上，通常通过在真空室中蒸发氧化铅和TiO x，同时在其中引入氧化气体。

7. 发明授权

US06198208B1 Thin film piezoelectric device 有权
标题翻译：薄膜压电元件
公开(公告)号：US06198208B1
公开(公告)日：2001-03-06
申请号：US09558586
申请日：2000-04-26
申请人： Yoshihiko Yano , Takao Noguchi , Hidenori Abe , Hisatoshi Saitou
发明人： Yoshihiko Yano , Takao Noguchi , Hidenori Abe , Hisatoshi Saitou
IPC分类号： H01L4104
CPC分类号： H03H9/176 , H01L41/1876 , H01L41/316 , H03H3/04 , H03H9/0211 , H03H9/174 , Y10T428/3171
摘要： A thin film piezoelectric device has an epitaxial metal thin film (4) on a silicon substrate (2) and a PZT thin film (5) on the metal thin film, the PZT thin film (5) having a Ti/(Ti+Zr) atomic ratio between 0.65 and 0.90. A film bulk acoustic resonator having an extremely broad band is realized.
摘要翻译：薄膜压电元件在金属薄膜上的硅衬底（2）和PZT薄膜（5）上具有外延金属薄膜（4），PZT薄膜（5）具有Ti /（Ti + Zr ）原子比在0.65和0.90之间。实现了具有极宽带的薄膜体声波谐振器。

8. 发明授权

US6096434A Film structure, electronic device, recording medium, and method for forming conductive oxide thin films 失效
标题翻译：膜结构，电子器件，记录介质和形成导电氧化物薄膜的方法
公开(公告)号：US6096434A
公开(公告)日：2000-08-01
申请号：US44227
申请日：1998-03-19
申请人： Yoshihiko Yano , Takao Noguchi
发明人： Yoshihiko Yano , Takao Noguchi
IPC分类号： H01L21/28 , C30B23/02 , C30B29/22 , G01Q60/38 , G01Q80/00 , G11B9/02 , G11B9/14 , H01G7/06 , H01L21/02 , H01L21/203 , H01L21/316 , H01L21/8242 , H01L21/8246 , H01L21/8247 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/14 , H01L29/788 , H01L29/792 , H01L37/02 , H01L41/083 , H01L41/09 , B32B9/04
CPC分类号： H01L21/31691 , C30B23/002 , C30B23/02 , C30B29/16 , C30B29/22 , H01L28/56
摘要： A film structure includes a conductive oxide thin film formed on a substrate having a silicon (100) face at its surface. The conductive oxide thin film is an epitaxial film composed mainly of strontium ruthenate. At least 80% of the surface of the conductive oxide thin film has a Rz of up to 10 nm. On the conductive oxide thin film having excellent surface flatness and crystallinity, a ferroelectric thin film, typically of lead zirconate titanate, having surface flatness and spontaneous polarization can be formed.
摘要翻译：膜结构包括在其表面具有硅（100）面的基板上形成的导电氧化物薄膜。导电氧化物薄膜是主要由钌酸锶构成的外延膜。至少80％的导电氧化物薄膜的表面具有高达10nm的Rz。在具有优异的表面平坦度和结晶度的导电氧化物薄膜上，可以形成具有表面平坦度和自发极化的通常为锆钛酸铅的铁电薄膜。

9. 发明授权

US6045626A Substrate structures for electronic devices 失效
标题翻译：电子设备基板结构
公开(公告)号：US6045626A
公开(公告)日：2000-04-04
申请号：US102568
申请日：1998-06-23
申请人： Yoshihiko Yano , Takao Noguchi
发明人： Yoshihiko Yano , Takao Noguchi
IPC分类号： H01L21/20 , H01L21/203 , H01L21/205 , H01L21/365 , H01L33/12 , H01L33/16 , H01L33/32 , H01L33/34 , H01L39/24
CPC分类号： H01L33/007 , H01L41/0815 , H01L41/316 , H01L41/319 , H01L39/2461
摘要： A substrate structure includes a single crystal Si substrate and a surface layer, with a buffer layer interleaved therebetween. The buffer layer includes at least one of an R--Zr family oxide thin film composed mainly of a rare earth oxide and/or zirconium oxide, an AMnO.sub.3 thin film composed mainly of rare earth element A, Mn and O and having a hexagonal YMnO.sub.3 type structure, an AlO.sub.x thin film composed mainly of Al and O, and a NaCl type nitride thin film composed mainly of titanium nitride, niobium nitride, tantalum nitride or zirconium nitride. The surface layer is an epitaxial film containing a wurtzite type oxide and/or nitride. The surface layer can serve as a functional film such as a semiconductor film or an underlying film therefor, and the substrate structure is useful for the manufacture of electronic devices.
摘要翻译：衬底结构包括单晶Si衬底和表面层，其间具有交错的缓冲层。缓冲层包括主要由稀土氧化物和/或氧化锆组成的R-Zr族氧化物薄膜中的至少一种，主要由稀土元素A，Mn和O组成的具有六方晶YMnO 3型的AMnO 3薄膜主要由Al和O组成的AlOx薄膜和主要由氮化钛，氮化铌，氮化钽或氮化锆组成的NaCl型氮化物薄膜。表面层是含有纤锌矿型氧化物和/或氮化物的外延膜。表面层可以用作诸如半导体膜或其下面的膜的功能膜，并且衬底结构对于电子器件的制造是有用的。

10. 发明授权

US5828080A Oxide thin film, electronic device substrate and electronic device 失效
标题翻译：氧化物薄膜，电子器件基板和电子器件
公开(公告)号：US5828080A
公开(公告)日：1998-10-27
申请号：US516356
申请日：1995-08-17
申请人： Yoshihiko Yano , Takao Noguchi
发明人： Yoshihiko Yano , Takao Noguchi
IPC分类号： C30B23/02 , H01L21/28 , H01L21/316 , H01L21/336 , H01L29/51 , H01L29/12 , H01L29/76
CPC分类号： H01L21/28194 , C30B23/02 , C30B29/22 , H01L21/316 , H01L29/517 , H01L29/66575
摘要： The invention provides an oxide thin film in the form of an epitaxial film of the composition: Zr.sub.1-x R.sub.x O.sub.2-.delta. wherein R is a rare earth metal inclusive of Y, x=0 to 0.75, preferably x=0.20 to 0.50, formed on a surface of a single crystal silicon substrate. A rocking curve of the film has a half-value width of up to 1.50.degree.. The film has a ten point mean roughness Rz of up to 0.60 nm across a reference length of 500 nm. An epitaxial film of the composition ZrO.sub.2 is constructed by unidirectionally oriented crystals. When a functional film is to be formed on the oxide thin film serving as a buffer film, an adequately epitaxially grown functional film of quality is available. Particularly when the single crystal substrate is rotated within its plane, an oxide thin film of uniform high quality having an area as large as 10 cm.sup.2 or more is obtained.
摘要翻译：本发明提供了一种组成为Zr1-xRxO2-δ的外延膜形式的氧化物薄膜，其中R是含有Y，x = 0至0.75，优选x = 0.20至0.50的稀土金属，优选x = 0.20至0.50，形成于单晶硅衬底的表面。薄膜的摇摆曲线半值宽度可达1.50度。该膜在500nm的参考长度上具有高达0.60nm的十点平均粗糙度Rz。组成ZrO2的外延膜由单向取向晶体构成。当在用作缓冲膜的氧化物薄膜上形成功能膜时，可以获得质量良好的外延生长的功能膜。特别是当单晶基板在其平面内旋转时，获得具有10cm 2或更大面积的均匀高质量的氧化物薄膜。

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